JP6870069B2 - めっき処理方法、めっき処理装置及び記憶媒体 - Google Patents
めっき処理方法、めっき処理装置及び記憶媒体 Download PDFInfo
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- JP6870069B2 JP6870069B2 JP2019506963A JP2019506963A JP6870069B2 JP 6870069 B2 JP6870069 B2 JP 6870069B2 JP 2019506963 A JP2019506963 A JP 2019506963A JP 2019506963 A JP2019506963 A JP 2019506963A JP 6870069 B2 JP6870069 B2 JP 6870069B2
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
- C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
- C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
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Description
図1を参照して、本発明の一実施形態に係るめっき処理装置の構成を説明する。図1は、本発明の一実施形態に係るめっき処理装置の構成を示す概略図である。
図1を参照して、めっき処理装置2の構成を説明する。図1は、めっき処理装置2の構成を示す概略平面図である。
次に図2を参照して、めっき処理部5の構成を説明する。図2は、めっき処理部5の構成を示す概略断面図である。
次に、本実施形態によるめっき処理方法によってめっき層が形成される基板の構成について説明する。
次に、めっき処理装置2を用いためっき処理方法について説明する。めっき処理装置2によって実施されるめっき処理方法は、上述した基板Wに対するめっき処理を含む。めっき処理は、めっき処理部5により実施される。めっき処理部5の動作は、制御部3によって制御される。
(1)還元剤の作用により酸化状態にあるPd微粒子の表面が還元され、粒子のサイズが小さくなり基板Wからリフトオフされる。
(2)Pd微粒子の表面上において還元剤の分解反応により水素ガスが発生し、触媒微粒子が泡にくるまれた状態で(浮力による)リフトオフされる。
(3)上記(1)、(2)が同時に生じている。
3 制御部
5 めっき処理部
31 非付着性材料部分
32 付着性材料部分
41 芯材
42 下地材
52 基板保持部
53 めっき液供給部
55a 触媒液供給部
55b 洗浄液供給部
55c リンス液供給部
55d 触媒除去液供給部
Claims (9)
- 触媒が付着し易い材料からなる付着性材料部分と、触媒が付着し難い材料からなる非付着性材料部分とを含む表面を有する基板を準備する工程と、
前記基板に触媒液を供給し、前記基板に触媒を付与する触媒付与工程と、
前記基板に還元剤を含む触媒除去液を供給し、前記付着性材料部分の表面上に前記触媒を残しつつ、前記非付着性材料部分から前記触媒を除去する触媒除去工程と、
前記基板に対してめっき液を供給することにより、前記付着性材料部分に対して選択的にめっき層を形成するめっき工程と
を備え、
前記非付着性材料部分は酸化ケイ素を主成分とし、前記付着性材料部分は窒化ケイ素を主成分とする、めっき処理方法。 - 前記めっき液は、還元剤を含む無電解めっき液であり、前記触媒除去液は、前記無電解めっき液に含まれる前記還元剤と同じ還元剤を含む、請求項1記載のめっき処理方法。
- 前記触媒除去液は、前記無電解めっき液に含まれる前記還元剤を純水で希釈したものである、請求項2記載のめっき処理方法。
- 前記無電解めっき液に含まれる前記還元剤は、ジメチルアミンボラン(DMAB)である、請求項2記載のめっき処理方法。
- 前記触媒除去工程を行った後に、前記触媒除去液を前記基板から除去するためのリンス工程を行うことなく、めっき工程を行うことを行う、請求項2記載のめっき処理方法。
- 前記触媒除去液はアルカリ性である、請求項1記載のめっき処理方法。
- 前記基板は、前記付着性材料部分からなる下地材と、前記下地材上に突設され、前記非付着性材料部分からなる芯材とを有する、請求項1記載のめっき処理方法。
- めっき処理装置の動作を制御するためのコンピュータにより実行されたときに、前記コンピュータが前記めっき処理装置を制御して請求項1から7のうちのいずれか一項に記載のめっき処理方法を実行させるプログラムが記録された記憶媒体。
- めっき処理装置であって、
基板を保持する基板保持部と、
前記基板に触媒液を供給する触媒付与部と、
前記基板に触媒除去液を供給する触媒除去液供給部と、
前記基板にめっき液を供給するめっき液供給部と、
当該めっき処理装置の動作を制御して、請求項1から7のうちのいずれか一項に記載のめっき処理方法を実行させる制御部と、
を備えためっき処理装置。
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PCT/JP2018/011355 WO2018174146A1 (ja) | 2017-03-23 | 2018-03-22 | めっき処理方法、めっき処理装置及び記憶媒体 |
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US4948707A (en) * | 1988-02-16 | 1990-08-14 | International Business Machines Corporation | Conditioning a non-conductive substrate for subsequent selective deposition of a metal thereon |
JPH11200060A (ja) * | 1998-01-20 | 1999-07-27 | Toyo Riko Kk | 金属皮膜形成方法 |
JP2002047574A (ja) * | 2000-07-27 | 2002-02-15 | Ishikawa Kinzoku Kogyo Kk | 高性能無電解めっき法 |
JP2002363761A (ja) * | 2001-06-07 | 2002-12-18 | Naoki Toriyama | めっき方法 |
JP2003293143A (ja) * | 2002-04-04 | 2003-10-15 | Murata Mfg Co Ltd | パラジウム触媒洗浄剤とパラジウム触媒の洗浄方法、及び該洗浄剤を使用した電子部品のめっき方法、並びに電子部品 |
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