TWI752186B - 鍍膜處理方法、鍍膜處理裝置及記憶媒體 - Google Patents
鍍膜處理方法、鍍膜處理裝置及記憶媒體 Download PDFInfo
- Publication number
- TWI752186B TWI752186B TW107108034A TW107108034A TWI752186B TW I752186 B TWI752186 B TW I752186B TW 107108034 A TW107108034 A TW 107108034A TW 107108034 A TW107108034 A TW 107108034A TW I752186 B TWI752186 B TW I752186B
- Authority
- TW
- Taiwan
- Prior art keywords
- catalyst
- substrate
- coating
- adhesive material
- liquid
- Prior art date
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 98
- 239000011248 coating agent Substances 0.000 title claims abstract description 87
- 238000003672 processing method Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims abstract description 197
- 239000003054 catalyst Substances 0.000 claims abstract description 157
- 239000000463 material Substances 0.000 claims abstract description 118
- 239000007788 liquid Substances 0.000 claims abstract description 107
- 239000000853 adhesive Substances 0.000 claims abstract description 74
- 230000001070 adhesive effect Effects 0.000 claims abstract description 73
- 238000000034 method Methods 0.000 claims abstract description 72
- 238000007747 plating Methods 0.000 claims abstract description 70
- 238000011282 treatment Methods 0.000 claims abstract description 59
- 230000008569 process Effects 0.000 claims abstract description 43
- 239000011247 coating layer Substances 0.000 claims abstract description 9
- 239000003638 chemical reducing agent Substances 0.000 claims description 19
- YPTUAQWMBNZZRN-UHFFFAOYSA-N dimethylaminoboron Chemical compound [B]N(C)C YPTUAQWMBNZZRN-UHFFFAOYSA-N 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 230000009467 reduction Effects 0.000 claims description 3
- 230000009471 action Effects 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 2
- 238000007865 diluting Methods 0.000 claims 1
- 239000000243 solution Substances 0.000 description 39
- 238000004140 cleaning Methods 0.000 description 31
- 230000007246 mechanism Effects 0.000 description 29
- 239000010410 layer Substances 0.000 description 19
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 7
- 238000003860 storage Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 239000002270 dispersing agent Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 4
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 4
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 4
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 210000000481 breast Anatomy 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000011162 core material Substances 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000193 polymethacrylate Polymers 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1837—Multistep pretreatment
- C23C18/1841—Multistep pretreatment with use of metal first
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/166—Process features with two steps starting with addition of reducing agent followed by metal deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1605—Process or apparatus coating on selected surface areas by masking
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
- C23C18/1632—Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1639—Substrates other than metallic, e.g. inorganic or organic or non-conductive
- C23C18/1642—Substrates other than metallic, e.g. inorganic or organic or non-conductive semiconductor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1827—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment only one step pretreatment
- C23C18/1831—Use of metal, e.g. activation, sensitisation with noble metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1872—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
- C23C18/1886—Multistep pretreatment
- C23C18/1893—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
- C23C18/36—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
- C23C18/50—Coating with alloys with alloys based on iron, cobalt or nickel
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemically Coating (AREA)
Abstract
[課題]在基板的表面賦予觸媒後從不想要附上鍍膜的部分將觸媒有效率地除去。 [解決手段]鍍膜處理方法,具備:準備具有包含由容易附著觸媒的材料所形成的附著性材料部分(32)、及由難以附著觸媒的材料所形成的非附著性材料部分(31)之表面的基板的工程;對基板供應觸媒液,而對基板賦予觸媒的觸媒賦予工程;對基板供應包含還原劑的觸媒除去液,在附著性材料部分的表面上殘留觸媒,同時從非附著性材料部分將觸媒除去的觸媒除去工程;藉由對基板供應鍍膜液,對附著性材料部分選擇地形成鍍膜層的鍍膜工程。
Description
本發明係有關於鍍膜處理方法、鍍膜處理裝置及記憶媒體。
近年來,隨著半導體裝置的微細化及3維化的進展,要求使加工半導體裝置時的蝕刻的加工精度提升。作為這種用以使蝕刻的加工精度提升的方法之一,使在基板上形成的乾蝕刻用硬遮罩(HM)的精度提升的要求提高。
一般,在硬遮罩的材料中,有具有與基板或光阻間的高密著性、具有對熱處理或蝕刻處理的高耐性、容易除去等各種要求。因此,作為硬遮罩的材料,僅使用氮化矽或氮化鈦等有限的材料。
鑑於上述實狀,本發明者們檢討到:對在基板表面混合由氧化矽(以下,在本說明書中,為了簡便,也記載成「SiO」)形成的部分與由氮化矽(以下,在本說明書中,為了簡便,也記載成「SiN」)形成的部分的基板,使在SiN部分的表面選擇地賦予Pd觸媒而僅在SiN部分的表面形成鍍膜層。在SiN部分的表面形成的鍍膜層能夠作為硬遮罩使用,又,因應要求性能可以由各種材料構成鍍膜層。
進行無電解鍍膜時,成為鍍膜的析出核之Pd等的觸媒被賦予至被鍍膜表面。在混合SiN部分與SiO部分的基板表面賦予觸媒後,觸媒不只在SiN上,也會附著於不想要形成鍍膜層的SiO部分。因為觸媒與SiO間的密著性,比觸媒與SiN間的密著性還低,藉由之後的沖洗處理,除去位於SiO部分的表面上之大部分的觸媒。不過,藉由沖洗處理要將存在於SiO部分的表面上的觸媒完全除去是困難的。在SiO部分的表面上若觸媒殘留的話,有將該殘留的觸媒作為核而形成鍍膜層的風險。 [先前技術文獻] [專利文獻]
[專利文獻1]特開2009-249679號公報
[發明所欲解決的問題]
本發明的目的為提供一種在基板的表面賦予觸媒後從不想要附上鍍膜的部分將觸媒有效率地除去的技術。 [解決問題的手段]
根據本發明的一實施形態,提供一種鍍膜處理方法,具備:準備具有包含由容易附著觸媒的材料所形成的附著性材料部分、及由難以附著觸媒的材料所形成的非附著性材料部分之表面的基板的工程;對前述基板供應觸媒液,而對前述基板賦予觸媒的觸媒賦予工程;對前述基板供應包含還原劑的觸媒除去液,在前述附著性材料部分的表面上殘留前述觸媒,同時從前述非附著性材料部分將前述觸媒除去的觸媒除去工程;藉由對前述基板供應鍍膜液,對前述附著性材料部分選擇地形成鍍膜層的鍍膜工程。
根據本發明的其他實施形態,提供一種記憶媒體,係記錄程式,該程式在藉由用以控制鍍膜處理裝置的動作的電腦來執行時,讓前述電腦控制前述鍍膜處理裝置,執行上述鍍膜處理方法。
根據本發明的又一個實施形態,提供一種鍍膜處理裝置,具備:將基板保持的基板保持部、對前述基板供應觸媒液的觸媒賦予部、對前述基板供應觸媒除去液的觸媒除去液供應部、對前述基板供應鍍膜液的鍍膜液供應部、控制該鍍膜處理裝置的動作,執行上述處理方法的控制部。 [發明的效果]
根據本發明的上述實施形態,能夠在基板的表面賦予觸媒後從不想要附上鍍膜的部分將觸媒有效率地除去,能夠防止在不需要鍍膜的部分形成鍍膜層。
以下,參照圖式說明有關本發明的一實施形態。
<鍍膜處理裝置的構成> 參照圖1說明有關本發明的一實施形態的鍍膜處理裝置的構成。圖1為表示本發明的一實施形態之鍍膜處理裝置的構成的概略圖。
如圖1所示,本發明的一實施形態之鍍膜處理裝置2具備:控制該鍍膜處理裝置2的動作的控制部3。
鍍膜處理裝置2進行對基板的各種處理。有關鍍膜處理裝置2進行的各種處理將於後述。
控制部3例如為電腦,具備動作控制部及記憶部。動作控制部例如藉由CPU(Central Processing Unit)構成,將儲存於記憶體部的程式讀出並執行,藉此控制鍍膜處理裝置2的動作。記憶部例如藉由RAM(Random Access Memory)、ROM(Read Only Memory)、硬碟等記憶裝置構成,記憶控制在鍍膜處理裝置2中執行的各種處理的程式。此外,程式可以記錄於藉由電腦可讀取的記憶媒體,也可以從該記憶媒體安裝至記憶部中。作為由電腦可讀取的記憶媒體,例如可以是硬碟(HD)、可撓性磁碟(FD)、光碟(CD)、磁光碟(MO)、記憶卡等。在記憶媒體中,例如,記錄在藉由用以控制鍍膜處理裝置2的動作的電腦來執行時,使電腦控制鍍膜處理裝置2執行鍍膜處理方法的程式。
<鍍膜處理單元的構成> 參照圖1說明鍍膜處理裝置2的構成。圖1為表示鍍膜處理裝置2的構成的概略平面圖。
鍍膜處理裝置2具備:搬入搬出平台21、鄰接搬入搬出平台21而設置的處理平台22。
搬入搬出平台21具備:載置部211、鄰接載置部211而設置的搬送部212。
載置部211載置有將複數枚基板W以水平狀態收容的複數搬送容器(以下稱為「載體C」。)。
搬送部212具備:搬送機構213及收授部214。搬送機構213具備將基板W保持的保持機構,以能向水平方向及鉛直方向移動並且能以鉛直軸為中心旋轉的方式構成。
處理平台22具備鍍膜處理部5。在本實施形態中,處理平台22所具有的鍍膜處理部5之數雖然是2個以上,但是1個也可以。鍍膜處理部5配置在預定方向延伸的搬送路221之兩側。
在搬送路221設有搬送機構222。搬送機構222具備將基板W保持的保持機構,以能向水平方向及鉛直方向移動並且能以鉛直軸為中心旋轉的方式構成。
在鍍膜處理裝置2中,搬入搬出平台21的搬送機構213在載體C與收授部214之間進行基板W的搬送。具體來說,搬送機構213從載置於載置部211的載體C將基板W取出,並將取出的基板W載置於收授部214。又,搬送機構213藉由處理平台22的搬送機構222將載置於收授部214的基板W取出,並收容至載置部211的載體C。
在鍍膜處理裝置2中,處理平台22的搬送機構222在收授部214與鍍膜處理部5之間、鍍膜處理部5與收授部214之間進行基板W的搬送。具體來說,搬送機構222將載置於收授部214的基板W取出,並將取出的基板W搬入至鍍膜處理部5。又,搬送機構222從鍍膜處理部5將基板W取出,並將取出的基板W載置於收授部214。
<鍍膜處理部的構成> 參照圖2說明鍍膜處理部5的構成。圖2為表示鍍膜處理部5的構成的概略剖面圖。
鍍膜處理部5藉由對在表面具有包含非附著性材料部分31及附著性材料部分32的表面之基板W進行鍍膜處理,對附著性材料部分32選擇地形成鍍膜層35(詳細後述)。附著性材料部分32代表由難以附著觸媒的材料所形成的部分。非附著性材料部分31代表由容易附著觸媒的材料所構成的部分。鍍膜處理部5進行的基板處理雖至少包含觸媒提供處理與無電解鍍膜處理,但包含觸媒賦予處理及鍍膜處理以外的基板處理也可以。
鍍膜處理部5具備:腔室51、配置於腔室51內將基板W保持的基板保持部52、對被保持於基板保持部52的基板W供應鍍膜液M1的鍍膜液供應部53。
基板保持部52具有:在腔室51內於鉛直方向延伸的旋轉軸521、安裝於旋轉軸521的上端部的轉動載台522、設於轉動載台522的上面外周部,支持基板W的外緣部的夾盤523、將旋轉軸521旋轉驅動的驅動部524。
基板W被支持於夾盤523,以從轉動載台522的上面稍微離間的狀態,水平保持於轉動載台522。在本實施形態中,基板保持部52保持基板W的方式,雖然是藉由可動的夾盤523來把持基板W外緣部的所謂機械夾持式,但將基板W的裏面真空吸附的所謂真空吸盤式也可以。
旋轉軸521的基端部藉由驅動部524以可旋轉的方式支持,旋轉軸521的前端部將轉動載台522水平支持。當旋轉軸521旋轉時,安裝於旋轉軸521的上端部的轉動載台522會旋轉,藉此,以支持於夾盤523的狀態保持在轉動載台522的基板W會旋轉。
鍍膜液供應部53具備:對保持於基板保持部52的基板W吐出鍍膜液M1的噴嘴531、對噴嘴531供應鍍膜液M1的鍍膜液供應源532。在鍍膜液供應源532所具有的槽中,儲留有鍍膜液M1,對噴嘴531,從鍍膜液供應源532通過介設有閥門533等流量調整器的供應管路534供應鍍膜液M1。
鍍膜液M1為自我觸媒型(還原型)無電解鍍膜用的鍍膜液。鍍膜液M1含有:鈷(Co)離子、鎳(Ni)離子、鎢(W)離子等金屬離子、及次磷酸、二甲基胺基硼烷等還原劑。此外,在自我觸媒型(還原型)無電解鍍膜中,鍍膜液M1中的金屬離子,被由鍍膜液M1中的還原劑的氧化反應放出的電子所還原,作為金屬析出而形成金屬膜(鍍膜)。鍍膜液M1含有添加劑等也可以。作為藉由使用鍍膜液M1的鍍膜處理所產生的金屬膜(鍍膜),例如有CoB、CoP、CoWP、CoWB、CoWBP、NiWB、NiB、NiWP、NiWBP等。金屬膜(鍍膜)中的P(磷)由含有P的還原劑例如次磷酸而來,鍍膜中的B(硼)由含有B的還原劑例如二甲基胺基硼烷(DMAB)而來。
噴嘴531連結至噴嘴移動機構54。噴嘴移動機構54將噴嘴531驅動。噴嘴移動機構54具有:臂541、可沿臂541移動的驅動機構內藏型的移動體542、使臂541旋轉及升降的旋轉升降機構543。噴嘴531安裝於移動體542。噴嘴移動機構54,能夠使噴嘴531在保持於基板保持部52的基板W中心上方的位置與基板W周緣上方的位置之間移動,而且在俯視時能使其移動至後述罩杯57外側的待機位置。
在腔室51內,相對於保持於基板保持部52的基板W配置:分別供應觸媒液N1、洗淨液N2、及沖洗液N3的觸媒液供應部(觸媒賦予部)55a、洗淨液供應部55b、沖洗液供應部55c及觸媒除去液供應部55d。
觸媒液供應部(觸媒賦予部)55a,相對於保持於基板保持部52的基板W具備:將觸媒液N1的噴嘴551a、對噴嘴551a供應觸媒液N1的觸媒液供應源552a。在觸媒液供應源552a所具有的槽中,儲留有觸媒液N1,對噴嘴551a,從觸媒液供應源552a通過介設有閥門553a等流量調整器的供應管路554a供應觸媒液N1。
洗淨液供應部55b具備:對保持於基板保持部52的基板W吐出洗淨液N2的噴嘴551b、對噴嘴551b供應洗淨液N2的洗淨液供應源552b。在洗淨液供應源552b所具有的槽中,儲留有洗淨液N2,對噴嘴551b,從洗淨液供應源552b通過介設有閥門553b等流量調整器的供應管路554b供應洗淨液N2。
沖洗液供應部55c具備:對保持於基板保持部52的基板W吐出沖洗液N3的噴嘴551c、對噴嘴551c供應沖洗液N3的沖洗液供應源552c。在沖洗液供應源552c所具有的槽中,儲留有沖洗液N3,對噴嘴551c,從沖洗液供應源552c通過介設有閥門553c等流量調整器的供應管路554c供應沖洗液N3。
觸媒除去液供應部55d具備:對保持於基板保持部52的基板W吐出觸媒除去液N4的噴嘴551d、對噴嘴551d供應觸媒除去液N4的觸媒除去液供應源552d。在觸媒除去液供應源552d所具有的槽中,儲留有觸媒除去液N4,對噴嘴551d,從觸媒除去液供應源552d通過介設有閥門553d等流量調整器的供應管路554d供應觸媒除去液N4。
觸媒液N1可以是含有粒子狀,特別是奈米粒子狀的金屬觸媒。具體來說,觸媒液N1包含:奈米粒子狀的金屬觸媒、分散劑、作為分散媒的水。作為這種奈米粒子狀的金屬觸媒例如可以是奈米粒子狀Pd(鈀)。分散劑發揮使奈米粒子狀的金屬觸媒容易在觸媒液N1中分散的效果。作為這種分散劑例如可以是聚乙烯吡咯啶酮(PVP)。金屬觸媒只要是對鍍膜液M1中的還原劑的氧化反應具有充分的觸媒活性者即可。作為這樣的觸媒,除了上述Pd以外,例如,可以是包含鐵族元素(Fe、Co、Ni)、鉑屬元素(Ru、Rh、Os、Ir、Pt)、Cu、Ag或Au者。在觸媒液N1中,也可以包含促進對賦予觸媒的材料表面的觸媒的吸附的吸附促進劑。
作為洗淨液N2,例如可以使用:甲酸、蘋果酸、琥珀酸、檸檬酸、丙二酸等有機酸、稀釋至不會使基板的被鍍膜面腐蝕的程度的濃度的氫氟酸(DHF)(氟化氫的水溶液)等。
做為沖洗液N3,例如,可使用純水。
作為觸媒除去液N4,可以使用還原劑,較佳為與在鍍膜液M1中含有的還原劑相同的還原劑。作為該種還原劑例示有上述的二甲基胺基硼烷(DMAB)。DMAB例如以由DIW(純水)稀釋至100倍~1000倍左右的狀態,作為觸媒除去液N4使用。
鍍膜處理部5具有將噴嘴551a~551c驅動的噴嘴移動機構56。噴嘴移動機構56具有:臂561、可沿臂561移動的驅動機構內藏型的移動體562、使臂561旋轉及升降的旋轉升降機構563。噴嘴551a~551c安裝於移動體562。噴嘴移動機構56,能夠使噴嘴551a~551c在保持於基板保持部52的基板W中心上方的位置與基板W周緣上方的位置之間移動,而且在俯視時使其移動至後述罩杯57外側的待機位置。在本實施形態中,噴嘴551a~551c雖由共通的臂來保持,但分別保持於各別的臂而能夠獨立移動也可以。
基板保持部52的周圍配置有罩杯57。該罩杯57接住從基板W飛散的各種處理液(例如,觸媒液、鍍膜液、洗淨液、沖洗液、觸媒除去液等)並排出至腔室51外。罩杯57具有使罩杯57在上下方向驅動的升降機構58。
<基板的構成> 接著,說明關於藉由本實施形態的鍍膜處理方法來形成鍍膜層的基板的構成。
如圖3所示,在形成鍍膜層35的基板W的表面具有:由難以附著觸媒的材料所形成的非附著性材料部分31、由容易附著觸媒的材料所形成的附著性材料部分32。非附著性材料部分31與附著性材料部分32可以分別露出基板W的表面,該具體的構成並無限制。在本實施形態中,基板W具有:由附著性材料部分32所形成的基底材42、突設於基底材42上,由形成圖案狀的非附著性材料部分31所形成的芯材41。
非附著性材料部分31,例如,由以SiO2
為主成分的材料所形成。附著性材料部分32,例如,由以SiN為主成分的材料所形成。在SiO2
的表面雖然幾乎沒有附著觸媒,但還是有些微附著。因為在含有於SiN中的N原子吸附有觸媒(在這裡為Pd),故在SiN的表面良好附著有觸媒。
接著,利用圖4(a)-(e)說明關於製作圖3所示的基板W的方法。當製作圖3所示的基板W時,首先,如圖4(a)所示,準備由附著性材料部分32所形成的基底材42。
接著,如圖4(b)所示,在由附著性材料部分32所形成的基底材42上的全面,例如藉由CVD法或PVD法來將構成非附著性材料部分31的材料31a成膜。材料31a,例如由以SiO2
為主成分的材料所形成。
接著,如圖4(c)所示,在構成非附著性材料部分31的材料31a的表面全體塗佈感光性光阻33a,並將其乾燥。接著,如圖4(d)所示,藉由對著感光性光阻33a隔著光罩進行曝光、顯影,形成具有所期望的圖案的光阻膜33。
之後,如圖4(e)所示,將光阻膜33作為遮罩將材料31a進行乾蝕刻。藉此,由非附著性材料部分31所形成的芯材41,被圖案化成與光阻膜33的圖案形狀略相同的形狀。之後,藉由將光阻膜33除去,得到在表面形成有非附著性材料部分31與附著性材料部分32的基板W。
<鍍膜處理方法> 接著,說明關於利用鍍膜處理裝置1的鍍膜處理方法。藉由鍍膜處理裝置1實施的鍍膜處理方法,包含對上述基板W的鍍膜處理。鍍膜處理藉由鍍膜處理部5來實施。鍍膜處理部5的動作藉由控制部3來控制。
首先,藉由例如上述圖4(a)-(e)所示的方法,準備在表面設有非附著性材料部分31與附著性材料部分32的基板W(準備工程:圖5的步驟S1)(參照圖6(a))。
接著,將這樣得到的基板W搬入至鍍膜處理部5,並保持於基板保持部52(參照圖2)。在這期間,控制部3控制升降機構58,使罩杯57降下至預定位置。接著,控制部3控制搬送機構222,將基板W載置於基板保持部52。基板W以其外緣部被夾盤523支持的狀態,水平保持於轉動載台522上。
接著,將保持於基板保持部52的基板W進行洗淨處理(前洗淨工程:圖5的步驟S2)。此時,控制部3控制驅動部524,使保持於基板保持部52的基板W以預定速度旋轉,同時控制洗淨液供應部55b,使噴嘴551b位於基板W的上方,從噴嘴551b對基板W供應洗淨液N2。被供應至基板W的洗淨液N2,藉由伴隨著基板W旋轉的離心力而在基板W的表面擴散。藉此,附著於基板W的附著物等從基板W被除去。從基板W飛散的洗淨液N2通過罩杯57排出。
接著,將洗淨後的基板W進行沖洗處理(沖洗工程:圖5的步驟S3)。此時,控制部3控制驅動部524,使保持於基板保持部52的基板W以預定速度旋轉,同時控制沖洗液供應部55c,使噴嘴551c位於基板W的上方,從噴嘴551c對基板W供應沖洗液N3。被供應至基板W的沖洗液N3,藉由伴隨著基板W旋轉的離心力而在基板W的表面擴散。藉此,殘留在基板W上的洗淨液N2被洗掉。從基板W飛散的沖洗液N3通過罩杯57排出。
接著,對基板W進行觸媒賦予處理(觸媒賦予工程:圖5的步驟S4)。此時,控制部3控制驅動部524,使保持於基板保持部52的基板W以預定速度旋轉,同時控制觸媒液供應部55a,使噴嘴551a位於基板W的上方,從噴嘴551a對基板W供應觸媒液N1。被供應至基板W的觸媒液N1,藉由伴隨著基板W旋轉的離心力而在基板W的表面擴散。從基板W飛散的觸媒液N1通過罩杯57排出。
藉由觸媒賦予處理,在基板W表面的全體(非附著性材料部分31及附著性材料部分32的兩者)(附著強度雖有大小之分)暫時附著有觸媒(也參照圖8(a))。含有於觸媒液N1中的觸媒(例如Pd)對構成附著性材料部分32的材料(例如SiN)具有高吸附性,但對構成非附著性材料部分31的材料(例如SiO2
)難以吸附。
接著,將洗淨後的基板W進行沖洗處理(沖洗工程:圖5的步驟S5)。該沖洗處理以與前述步驟S3一樣的方式進行。藉由該沖洗處理,附著於非附著性材料部分31表面的觸媒的大半被洗掉。但是,雖說相對於非附著性材料部分31的觸媒的附著性(吸附性)低,少量的觸媒會殘留於非附著性材料部分31的表面(繼續附著)(也參照圖8(b))。該殘留的觸媒,成為在鍍膜工程中的析出核。也就是說,在鍍膜工程中,在非附著性材料部分31的表面產生不希望有的鍍膜的析出。
為了從非附著性材料部分31的表面將觸媒除去,對沖洗處理後的基板W施予觸媒除去處理(觸媒除去工程:圖5的步驟S6)。此時,控制部3控制驅動部524,使保持於基板保持部52的基板W以預定速度旋轉,同時控制觸媒除去液供應部55d,使噴嘴551d位於基板W的上方,從噴嘴551d對基板W供應觸媒除去液N4。被供應至基板W的觸媒除去液N4,藉由伴隨著基板W旋轉的離心力而在基板W的表面擴散。藉此,附著於非附著性材料部分31的觸媒全部或幾乎全部(也就是在之後的鍍膜處理中不會形成鍍膜的程度)被洗掉。從基板W飛散的觸媒除去液N4通過罩杯57排出。另一方面,雖從附著性材料部分32的表面一定程度的量的觸媒也被除去,但在之後的鍍膜處理中殘留下對鍍膜的形成沒有支障的程度的充分量的觸媒(也參照圖8(c))。
作為觸媒除去液N4使用由DIW(純水)稀釋至100倍~1000倍左右的DMAB時,從噴嘴551d對基板W供應觸媒除去液N4的時間例如為10秒左右的短時間即可。
此外,使用含有奈米粒子狀的Pd觸媒、由聚乙烯吡咯啶酮(PVP)所形成的分散劑、純水的觸媒液N1進行觸媒賦予處理後,將由純水稀釋到100倍~1000倍左右的DMAB作為觸媒除去液N4使用,約進行10秒間的觸媒除去處理,能夠將附著於由SiO2
形成的非附著性材料部分31表面的Pd的奈米粒子除去,而且確認到在由SiN形成的附著性材料部分32的表面殘留有不會對鍍膜處理造成支障的充分的量的Pd的奈米粒子。
能夠藉由上述觸媒除去液N4來將奈米粒子狀的Pd觸媒除去的機制,雖然還不完全明確,但發明者作出以下的推定。 (1) 因還原劑的作用而在氧化狀態的Pd微粒子的表面被還原,粒子的大小變小而從基板W剝離。 (2) 在Pd微粒子的表面上因還原劑的分解反應而產生氫氣,觸媒微粒子以被氣泡包覆的狀態而(因浮力)剝離。 (3) 上述(1)、(2)同時發生。
前述觸媒除去處理的結束後且在後述鍍膜處理前,能夠進行基板W的沖洗處理。但是,若在觸媒除去處理中使用的觸媒除去液的成分不會對鍍膜液造成壞影響的話,可以省略該沖洗處理。具體來說,例如,作為觸媒除去液N4使用藉由DIW(純水)稀釋到100倍~1000倍左右的DMAB,且在鍍膜液M1中作為還原劑含有DMAB時,可以省略沖洗處理。
從非附著性材料部分31將觸媒除去後,對基板W施予鍍膜處理(鍍膜工程:圖5的步驟S7)。此時,控制部3控制驅動部524,使保持於基板保持部52的基板W以預定速度旋轉、或將保持於基板保持部52的基板W維持於停止狀態,同時控制鍍膜液供應部53,使噴嘴531位於基板W的上方,從噴嘴531對基板W供應鍍膜液M1。藉此,在基板W的附著性材料部分32(具體來說,附著於附著性材料部分32的表面的觸媒)選擇地析出鍍膜金屬,形成鍍膜層35。另一方面,因為在基板W之中非附著性材料部分31,未實質地存在觸媒,在非附著性材料部分31不實質地析出鍍膜金屬,未形成鍍膜層35(參照圖6(b))。
如同上述鍍膜處理結束後,將保持於基板保持部52的基板W進行洗淨處理(後洗淨工程:圖5的步驟S8)。此時,控制部3控制驅動部524,使保持於基板保持部52的基板W以預定速度旋轉,同時控制洗淨液供應部55b,使噴嘴551b位於基板W的上方,從噴嘴551b對基板W供應洗淨液N2。被供應至基板W的洗淨液N2,藉由伴隨著基板W旋轉的離心力而在基板W的表面擴散。藉此,附著於基板W的異常鍍膜及反應副生成物等從基板W被除去。從基板W飛散的洗淨液N2通過罩杯57排出。
接著,控制部3控制驅動部524,使保持於基板保持部52的基板W以預定速度旋轉,同時控制沖洗液供應部55c,使噴嘴551c位於基板W的上方,從噴嘴551c對基板W供應沖洗液N3(沖洗工程:圖5的步驟S9)。藉此,基板W上的鍍膜液M1、洗淨液N2及沖洗液N3,藉由伴隨著基板W旋轉的離心力從基板W飛散,並通過罩杯57排出。
之後,形成鍍膜層35的基板W,從鍍膜處理部5被搬出。此時,控制部3控制搬送機構222,從鍍膜處理部5將基板W取出,將取出的基板W載置於收授部214的同時,控制搬送機構213,將載置於收授部214的基板W取出,並收容至載置部211的載體C。
接著,將鍍膜層35作為硬遮罩使用而蝕刻基板W。
此時,首先從鍍膜處理部5取出的基板W之中,將非附著性材料部分31選擇地除去(圖7(a))。另一方面,形成於附著性材料部分32上的鍍膜層35,不除去而殘留。
接著,如圖7(b)所示,將鍍膜層35作為硬遮罩而將由附著性材料部分32所形成的基底材42進行乾蝕刻。藉此,基底材42之中未被鍍膜層35包覆的部分被蝕刻至預定的深度,形成圖案狀的凹部。
之後,如圖7(c)所示,藉由將鍍膜層35以濕式洗淨法除去,得到形成圖案狀凹部的基底材42。此外,因為能將鍍膜層35以濕式洗淨法除去,能夠輕易地將鍍膜層35除去。作為在這種濕式洗淨法使用的藥液,使用酸性溶劑。
然而,本發明並不限於上述的實施例,可以在實施階段中,以不脫離此內容的範圍內,改變及具體化構成要素。此外,也可以將上述實施例所揭示的複數構成要素做適當的組合,完成各種發明。也可以從實施形態所示的全部構成要素刪除一些構成要素。再來,也可將不同的實施形態中的構成要素作適當的組合。
使觸媒除去液N4中含有pH調整劑,例如PMA(聚甲基丙烯酸酯),將觸媒除去液調整成鹼性也可以。在鹼性的洗淨液中因為各種構件的表面有帶負電的傾向,能夠防止一旦除去的粒子狀物質(Pd粒子等)再附著於基板。
在上述實施形態中,包含於觸媒除去液N4的液體為DMAB,但不以此為限。例如,在鍍膜液M1中包含含有P(磷)的還原劑,例如次磷酸時,作為將觸媒除去液N4以純水稀釋的次磷酸也可以。此時,在觸媒除去處理與鍍膜處理之間不進行沖洗處理也可以。
在上述實施形態中,雖然附著性材料部分32由氮化矽形成,非附著性材料部分31由氧化矽形成,但不以此為限。附著性材料部分32,例如,由(1)包含OCHx基及NHx基之中至少一者的材料、(2)以Si系材料為主成分的金屬材料、(3)以觸媒金屬材料為主成分的材料、或、(4)以碳為主成分的材料的任一種所形成也可以。作為該當於上述(1)的材料,可以是包含Si-OCHx基或Si-NHx基的材料,例如是SiOCH或SiN。作為該當於上述(2)的材料,可以是摻雜B或P的Poly-Si、Poly-Si、Si。
2‧‧‧鍍膜處理裝置3‧‧‧控制部5‧‧‧鍍膜處理部31‧‧‧非附著性材料部分32‧‧‧附著性材料部分41‧‧‧芯材42‧‧‧基底材52‧‧‧基板保持部53‧‧‧鍍膜液供應部55a‧‧‧觸媒液供應部55b‧‧‧洗淨液供應部55c‧‧‧沖洗液供應部55d‧‧‧觸媒除去液供應部
[圖1]圖1為鍍膜處理裝置的概略平面圖。 [圖2]圖2為表示圖1所示的鍍膜處理裝置的鍍膜處理部的構成的概略剖面圖。 [圖3]圖3為表示藉由本發明的一實施形態的鍍膜處理方法來形成鍍膜層的基板的構成的概略剖面圖。 [圖4]圖4(a)-(e)為表示藉由上述鍍膜處理方法來形成鍍膜層的基板的製造方法的概略剖面圖。 [圖5]圖5為上述鍍膜處理方法的流程圖。 [圖6]圖6(a)-(b)為用以說明上述鍍膜處理方法的概略剖面圖。 [圖7]圖7(a)-(c)為表示將藉由上述鍍膜處理方法來形成鍍膜層的基板加工的方法的概略剖面圖。 [圖8]圖8(a)-(c)為表示從基板的非附著性材料部分31除去觸媒粒子的樣子的概略圖。
32‧‧‧附著性材料部分
35‧‧‧鍍膜層
42‧‧‧基底材
Claims (11)
- 一種鍍膜處理方法,具備:準備具有包含由容易附著觸媒的材料所形成的附著性材料部分、及由難以附著觸媒的材料所形成的非附著性材料部分之表面的基板的工程;對前述基板供應觸媒液,而對前述基板賦予觸媒的觸媒賦予工程;對前述基板供應包含還原劑的觸媒除去液,在前述附著性材料部分的表面上殘留前述觸媒,同時從前述非附著性材料部分將前述觸媒除去的觸媒除去工程;藉由對前述基板供應鍍膜液,對前述附著性材料部分選擇地形成鍍膜層的鍍膜工程;將前述鍍膜層作為硬遮罩將前述基板進行蝕刻的工程。
- 一種鍍膜處理方法,具備:準備具有包含由容易附著觸媒的材料所形成的附著性材料部分、及由難以附著觸媒的材料所形成的非附著性材料部分之表面的基板的工程;對前述基板供應觸媒液,而對前述基板賦予觸媒的觸媒賦予工程;對前述基板供應包含還原劑的觸媒除去液,在前述附著性材料部分的表面上殘留前述觸媒,同時從前述非附著性材料部分將前述觸媒除去的觸媒除去工程;藉由對前述基板供應鍍膜液,對前述附著性材料部分 選擇地形成鍍膜層的鍍膜工程;其中,前述非附著性材料部分以氧化矽作為主成分,前述附著性材料部分以氮化矽作為主成分。
- 如請求項1或2所記載的鍍膜處理方法,其中,前述鍍膜液為包含還原劑的無電解鍍膜液;前述觸媒除去液包含:與前述無電解鍍膜液中含有的前述還原劑相同的還原劑。
- 如請求項3所記載的鍍膜處理方法,其中,前述觸媒除去液為以純水稀釋在前述無電解鍍膜液中含有的前述還原劑者。
- 如請求項3所記載的鍍膜處理方法,其中,前述無電解鍍膜液中含有的前述還原劑為二甲基胺基硼烷(DMAB)。
- 如請求項3所記載的鍍膜處理方法,其中,在進行前述觸媒除去工程後,不進行用以將前述觸媒除去液從前述基板除去的沖洗工程,而進行鍍膜工程。
- 如請求項1或2所記載的鍍膜處理方法,其中,前述觸媒除去液為鹼性。
- 如請求項1所記載的鍍膜處理方法,其中,前述非附著性材料部分以氧化矽作為主成分,前述附著性材料部分以氮化矽作為主成分。
- 如請求項1或2所記載的鍍膜處理方法,其中,前述基板具有:由前述附著性材料部分所形成的基底材、突設於前述基底材上,由前述非附著性材料部分所形成的芯材。
- 一種記憶媒體,係記錄程式,該程式在藉由用以控制鍍膜處理裝置的動作的電腦來執行時,讓前述電腦控制前述鍍膜處理裝置,執行如請求項1至9中任1項所記載的鍍膜處理方法。
- 一種鍍膜處理裝置,具備:保持基板的基板保持部;對前述基板供應觸媒液的觸媒賦予部;對前述基板供應觸媒除去液的觸媒除去液供應部;對前述基板供應鍍膜液的鍍膜液供應部;控制該鍍膜處理裝置的動作,執行如請求項1至9中任1項所記載的鍍膜處理方法的控制部。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-058014 | 2017-03-23 | ||
JP2017058014 | 2017-03-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201903203A TW201903203A (zh) | 2019-01-16 |
TWI752186B true TWI752186B (zh) | 2022-01-11 |
Family
ID=63584583
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW107108034A TWI752186B (zh) | 2017-03-23 | 2018-03-09 | 鍍膜處理方法、鍍膜處理裝置及記憶媒體 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20210115565A1 (zh) |
JP (1) | JP6870069B2 (zh) |
KR (1) | KR102617194B1 (zh) |
TW (1) | TWI752186B (zh) |
WO (1) | WO2018174146A1 (zh) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012136769A (ja) * | 2010-12-10 | 2012-07-19 | Sankyo Kasei Co Ltd | 成形回路部品の製造方法 |
TW201234462A (en) * | 2010-11-04 | 2012-08-16 | Sankyo Kasei Kk | A manufacture method of forming a circuit unit |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4948707A (en) * | 1988-02-16 | 1990-08-14 | International Business Machines Corporation | Conditioning a non-conductive substrate for subsequent selective deposition of a metal thereon |
JPH11200060A (ja) * | 1998-01-20 | 1999-07-27 | Toyo Riko Kk | 金属皮膜形成方法 |
JP2002047574A (ja) * | 2000-07-27 | 2002-02-15 | Ishikawa Kinzoku Kogyo Kk | 高性能無電解めっき法 |
JP2002363761A (ja) * | 2001-06-07 | 2002-12-18 | Naoki Toriyama | めっき方法 |
JP2003293143A (ja) * | 2002-04-04 | 2003-10-15 | Murata Mfg Co Ltd | パラジウム触媒洗浄剤とパラジウム触媒の洗浄方法、及び該洗浄剤を使用した電子部品のめっき方法、並びに電子部品 |
KR100672661B1 (ko) * | 2004-12-28 | 2007-01-24 | 동부일렉트로닉스 주식회사 | 시모스 이미지 센서의 제조방법 |
JP2007270224A (ja) * | 2006-03-30 | 2007-10-18 | Ebara Corp | 無電解めっき方法及び装置 |
JP4547016B2 (ja) | 2008-04-04 | 2010-09-22 | 東京エレクトロン株式会社 | 半導体製造装置、半導体製造方法 |
US9384980B2 (en) * | 2014-07-01 | 2016-07-05 | Kabushiki Kaisha Toshiba | Manufacturing method of semiconductor device |
JP6762831B2 (ja) * | 2016-03-31 | 2020-09-30 | 東京エレクトロン株式会社 | ハードマスクの形成方法、ハードマスクの形成装置及び記憶媒体 |
-
2018
- 2018-03-09 TW TW107108034A patent/TWI752186B/zh active
- 2018-03-22 JP JP2019506963A patent/JP6870069B2/ja active Active
- 2018-03-22 KR KR1020197030155A patent/KR102617194B1/ko active IP Right Grant
- 2018-03-22 WO PCT/JP2018/011355 patent/WO2018174146A1/ja active Application Filing
- 2018-03-22 US US16/496,064 patent/US20210115565A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201234462A (en) * | 2010-11-04 | 2012-08-16 | Sankyo Kasei Kk | A manufacture method of forming a circuit unit |
JP2012136769A (ja) * | 2010-12-10 | 2012-07-19 | Sankyo Kasei Co Ltd | 成形回路部品の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2018174146A1 (ja) | 2020-01-23 |
KR102617194B1 (ko) | 2023-12-26 |
WO2018174146A1 (ja) | 2018-09-27 |
US20210115565A1 (en) | 2021-04-22 |
JP6870069B2 (ja) | 2021-05-12 |
KR20190127834A (ko) | 2019-11-13 |
TW201903203A (zh) | 2019-01-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI677902B (zh) | 硬遮罩之形成方法、硬遮罩之形成裝置及記憶媒體 | |
TWI752186B (zh) | 鍍膜處理方法、鍍膜處理裝置及記憶媒體 | |
TWI737835B (zh) | 鍍敷處理方法,鍍敷處理裝置及記憶媒體 | |
TWI734844B (zh) | 鍍敷處理方法、鍍敷處理裝置及記憶媒體 | |
JP6815828B2 (ja) | めっき処理方法、めっき処理装置及び記憶媒体 | |
TWI733918B (zh) | 鍍敷處理方法、鍍敷處理裝置及記憶媒體 | |
JP6903767B2 (ja) | めっき処理方法、めっき処理装置及び記憶媒体 | |
US11004684B2 (en) | Forming method of hard mask | |
WO2018070127A1 (ja) | 基板処理システム |