JP6781047B2 - 高いアライメント精度でレンズをｌｅｄモジュールに取り付ける方法 - Google Patents

高いアライメント精度でレンズをｌｅｄモジュールに取り付ける方法 Download PDF

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JP6781047B2
JP6781047B2 JP2016567974A JP2016567974A JP6781047B2 JP 6781047 B2 JP6781047 B2 JP 6781047B2 JP 2016567974 A JP2016567974 A JP 2016567974A JP 2016567974 A JP2016567974 A JP 2016567974A JP 6781047 B2 JP6781047 B2 JP 6781047B2
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light emitting
lens
adhesive
substrate
emitting element
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JP2017516314A5 (enExample
JP2017516314A (ja
Inventor
ムン レオン，チー
ムン レオン，チー
リエン フォン，リー
リエン フォン，リー
ホ チョン，クォン
ホ チョン，クォン
チン ロー，ルエン
チン ロー，ルエン
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ルミレッズ ホールディング ベーフェー
ルミレッズ ホールディング ベーフェー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V17/00—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages
    • F21V17/10—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages characterised by specific fastening means or way of fastening
    • F21V17/101—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages characterised by specific fastening means or way of fastening permanently, e.g. welding, gluing or riveting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations

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  • Led Device Packages (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
JP2016567974A 2014-05-21 2015-05-12 高いアライメント精度でレンズをｌｅｄモジュールに取り付ける方法 Active JP6781047B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462001091P 2014-05-21 2014-05-21
US62/001,091 2014-05-21
PCT/IB2015/053475 WO2015177679A1 (en) 2014-05-21 2015-05-12 Method of attaching a lens to an led module with high alignment accuracy

Publications (3)

Publication Number Publication Date
JP2017516314A JP2017516314A (ja) 2017-06-15
JP2017516314A5 JP2017516314A5 (enExample) 2018-06-14
JP6781047B2 true JP6781047B2 (ja) 2020-11-04

Family

ID=53398155

Family Applications (1)

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JP2016567974A Active JP6781047B2 (ja) 2014-05-21 2015-05-12 高いアライメント精度でレンズをｌｅｄモジュールに取り付ける方法

Country Status (6)

Country Link
US (1) US10103300B2 (enExample)
EP (1) EP3146263B1 (enExample)
JP (1) JP6781047B2 (enExample)
KR (1) KR102400442B1 (enExample)
CN (2) CN106463592A (enExample)
WO (1) WO2015177679A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6863202B2 (ja) * 2017-09-27 2021-04-21 日亜化学工業株式会社 発光モジュールの製造方法。
JP7177328B2 (ja) * 2017-09-29 2022-11-24 日亜化学工業株式会社 発光装置
EP3599414B1 (en) * 2018-07-23 2024-09-04 Shin-Etsu Chemical Co., Ltd. Synthetic quartz glass cavity member, synthetic quartz glass cavity lid, optical device package, and making methods
CN110873936A (zh) * 2018-08-31 2020-03-10 宁波舜宇光电信息有限公司 多群组镜头、摄像模组及其制造方法
JP7348533B2 (ja) * 2021-03-31 2023-09-21 日亜化学工業株式会社 発光装置

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JP2004207660A (ja) * 2002-12-26 2004-07-22 Toyoda Gosei Co Ltd 発光ダイオード
JP4504662B2 (ja) * 2003-04-09 2010-07-14 シチズン電子株式会社 Ｌｅｄランプ
JP4398781B2 (ja) * 2004-05-06 2010-01-13 ローム株式会社 発光装置
CN2720646Y (zh) 2004-07-29 2005-08-24 亿光电子工业股份有限公司 高功率发光二极管封装结构
US7858408B2 (en) * 2004-11-15 2010-12-28 Koninklijke Philips Electronics N.V. LED with phosphor tile and overmolded phosphor in lens
US7344902B2 (en) * 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
US7646035B2 (en) * 2006-05-31 2010-01-12 Cree, Inc. Packaged light emitting devices including multiple index lenses and multiple index lenses for packaged light emitting devices
JP2007088060A (ja) * 2005-09-20 2007-04-05 Toshiba Lighting & Technology Corp 発光装置
US7378686B2 (en) * 2005-10-18 2008-05-27 Goldeneye, Inc. Light emitting diode and side emitting lens
JP4013077B2 (ja) * 2005-11-21 2007-11-28 松下電工株式会社 発光装置およびその製造方法
KR100735432B1 (ko) * 2006-05-18 2007-07-04 삼성전기주식회사 발광소자 패키지 및 발광소자 패키지 어레이
JP2007311707A (ja) * 2006-05-22 2007-11-29 Ushio Inc 紫外線発光素子パッケージ
CN101075655B (zh) * 2007-06-05 2010-07-07 诸建平 白光面光源发光装置
US20100181594A1 (en) * 2008-03-25 2010-07-22 Lin Charles W C Semiconductor chip assembly with post/base heat spreader and cavity over post
JP5256848B2 (ja) * 2008-05-29 2013-08-07 日亜化学工業株式会社 半導体装置
CN101436638B (zh) * 2008-12-16 2010-06-02 王海军 大功率led封装结构
CN101436637B (zh) * 2008-12-16 2011-02-16 王海军 一种高效散热发光的大功率led封装结构
CN101452986A (zh) * 2008-12-31 2009-06-10 广东昭信光电科技有限公司 白光发光二极管器件的封装结构和方法
US7855394B2 (en) * 2009-06-18 2010-12-21 Bridgelux, Inc. LED array package covered with a highly thermal conductive plate
KR100986468B1 (ko) * 2009-11-19 2010-10-08 엘지이노텍 주식회사 렌즈 및 렌즈를 갖는 발광 장치
WO2011066421A2 (en) 2009-11-25 2011-06-03 Cooper Technologies Company Systems, methods, and devices for sealing led light sources in a light module
JP5395761B2 (ja) * 2010-07-16 2014-01-22 日東電工株式会社 発光装置用部品、発光装置およびその製造方法
JP2012038999A (ja) * 2010-08-10 2012-02-23 Seiko Instruments Inc 発光デバイス及びその製造方法
JP2012043883A (ja) 2010-08-17 2012-03-01 Toshiba Corp 半導体装置およびその製造方法
KR101812168B1 (ko) * 2011-04-19 2017-12-26 엘지전자 주식회사 발광 소자 패키지 및 이를 이용한 발광 장치
US20130056773A1 (en) * 2011-09-02 2013-03-07 Wen Kun Yang Led package and method of the same
WO2013080596A1 (ja) * 2011-11-29 2013-06-06 シャープ株式会社 発光デバイスの製造方法
JP2013135084A (ja) * 2011-12-26 2013-07-08 Nitto Denko Corp 発光ダイオード装置の製造方法
CN103515517B (zh) * 2012-06-20 2016-03-23 展晶科技(深圳)有限公司 发光二极管模组
TWM452305U (zh) * 2012-12-12 2013-05-01 Genesis Photonics Inc 發光裝置

Also Published As

Publication number Publication date
CN106463592A (zh) 2017-02-22
KR102400442B1 (ko) 2022-05-20
CN110047987A (zh) 2019-07-23
US10103300B2 (en) 2018-10-16
CN110047987B (zh) 2023-10-20
KR20170010396A (ko) 2017-01-31
WO2015177679A1 (en) 2015-11-26
EP3146263A1 (en) 2017-03-29
EP3146263B1 (en) 2019-09-25
JP2017516314A (ja) 2017-06-15
US20170047490A1 (en) 2017-02-16

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