JP6780330B2 - 塗布膜除去装置、塗布膜除去方法及び記憶媒体 - Google Patents

塗布膜除去装置、塗布膜除去方法及び記憶媒体 Download PDF

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JP6780330B2
JP6780330B2 JP2016136224A JP2016136224A JP6780330B2 JP 6780330 B2 JP6780330 B2 JP 6780330B2 JP 2016136224 A JP2016136224 A JP 2016136224A JP 2016136224 A JP2016136224 A JP 2016136224A JP 6780330 B2 JP6780330 B2 JP 6780330B2
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coating film
substrate
liquid
wafer
gas
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Japanese (ja)
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JP2017092445A (ja
Inventor
真任 田所
真任 田所
輝彦 小玉
輝彦 小玉
崇史 橋本
崇史 橋本
拓 永金
拓 永金
正志 榎本
正志 榎本
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2016136224A 2015-11-11 2016-07-08 塗布膜除去装置、塗布膜除去方法及び記憶媒体 Active JP6780330B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020160147873A KR102646640B1 (ko) 2015-11-11 2016-11-08 도포막 제거 장치, 도포막 제거 방법 및 기억 매체

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015221489 2015-11-11
JP2015221489 2015-11-11

Publications (2)

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JP2017092445A JP2017092445A (ja) 2017-05-25
JP6780330B2 true JP6780330B2 (ja) 2020-11-04

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Country Status (2)

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JP (1) JP6780330B2 (ko)
KR (1) KR102646640B1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7007869B2 (ja) * 2017-11-14 2022-01-25 東京エレクトロン株式会社 基板処理装置、基板処理方法及びコンピュータ読み取り可能な記録媒体
KR102447277B1 (ko) * 2017-11-17 2022-09-26 삼성전자주식회사 스핀 코터 및 이를 구비하는 기판처리 장치와 기판처리 시스템
JP7469145B2 (ja) 2020-05-29 2024-04-16 株式会社Ｓｃｒｅｅｎホールディングス 周縁部塗布装置および周縁部塗布方法
JP2024503164A (ja) 2020-08-11 2024-01-25 株式会社レゾナック 溶剤組成物
WO2022072390A1 (en) * 2020-10-01 2022-04-07 Lam Research Corporation Preplating edge dry

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06196401A (ja) * 1992-12-24 1994-07-15 Dainippon Screen Mfg Co Ltd 基板端縁洗浄装置
JP3248970B2 (ja) * 1993-01-11 2002-01-21 大日本スクリーン製造株式会社 基板端縁洗浄装置
JP3114084B2 (ja) * 1994-04-04 2000-12-04 東京エレクトロン株式会社 処理方法及び処理装置
JPH09106980A (ja) * 1995-10-11 1997-04-22 Kawasaki Steel Corp 塗布膜形成装置及び塗布膜形成方法
JP3300624B2 (ja) * 1997-01-24 2002-07-08 東京エレクトロン株式会社 基板端面の洗浄方法
JP3405312B2 (ja) * 2000-02-25 2003-05-12 日本電気株式会社 塗布膜除去装置
US20030070695A1 (en) * 2001-10-16 2003-04-17 Applied Materials, Inc. N2 splash guard for liquid injection on the rotating substrate
JP4377169B2 (ja) * 2002-07-08 2009-12-02 東京エレクトロン株式会社 処理装置及び処理方法
JP4363593B2 (ja) * 2003-05-14 2009-11-11 東京エレクトロン株式会社 薄膜除去装置
JP4761381B2 (ja) * 2006-08-01 2011-08-31 東京エレクトロン株式会社 薄膜除去装置及び薄膜除去方法
JP5068577B2 (ja) * 2007-04-25 2012-11-07 株式会社エムテーシー 角形被処理体のフォトレジストの除去装置
JP5320455B2 (ja) 2011-12-16 2013-10-23 東京エレクトロン株式会社 基板処理装置及び基板処理方法

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Publication number Publication date
JP2017092445A (ja) 2017-05-25
KR102646640B1 (ko) 2024-03-13
KR20170055425A (ko) 2017-05-19

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