JP6778816B2 - 太陽電池セル及び太陽電池セルの製造方法 - Google Patents
太陽電池セル及び太陽電池セルの製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 435
- 239000012535 impurity Substances 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 411
- 239000010408 film Substances 0.000 description 22
- 229910021419 crystalline silicon Inorganic materials 0.000 description 21
- 230000004048 modification Effects 0.000 description 19
- 238000012986 modification Methods 0.000 description 19
- 238000002161 passivation Methods 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 238000010248 power generation Methods 0.000 description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 12
- 239000000969 carrier Substances 0.000 description 12
- 239000011241 protective layer Substances 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
第1導電型の結晶性半導体の基板(20)と、
基板(20)の一主面(第2主面20b)の第1領域(W1)上に設けられる第1半導体層(21)と、
一主面(第2主面20b)の第1領域(W1)と異なる第2領域(W2)上に設けられる第2半導体層(22)と、
第1半導体層(21)上に設けられる第1透明電極層(23)と、
第2半導体層(22)上に設けられる第2透明電極層(24)と、を備える。
第1半導体層(21)は、第1導電型の第1非晶質半導体層(31)と、一主面(第2主面20b)から第1透明電極層(23)に向けて柱状に延びる第1結晶性半導体部(35)と、を含み、
第2半導体層(22)は、第1導電型と異なる第2導電型の第2非晶質半導体層(32)を含む。
第1領域(W1)の単位面積あたりに設けられる第1結晶性半導体部(35)の量は、第2領域(W2)の単位面積あたりに設けられる第2結晶性半導体部(36)の量より多くてもよい。
第1導電型の結晶性半導体の基板(20)の一主面(第2主面20b)上の第1領域W1に第1半導体層(21)を形成し、
一主面(第2主面20b)の第1領域(W1)と異なる第2領域(W2)上に第2半導体層(22)を形成し、
第1半導体層(21)上および第2半導体層(22)上に透明電極層(第1透明電極層23,第2透明電極層24)を形成する。
第1半導体層(21)は、第1導電型の第1非晶質半導体層(31)と、一主面(第2主面20b)から透明電極層(第1透明電極層23)に向けて柱状に延びる第1結晶性半導体部(35)と、を含み、
第2半導体層(22)は、第1導電型と異なる第2導電型の第2非晶質半導体層(32)を含み、
第1非晶質半導体層(31)および第1結晶性半導体部(35)は、同時に形成される。
図7は、変形例に係る太陽電池セル110の構造を示す断面図である。本変形例では、第1領域W1の第2主面20bの近傍に第1導電型の不純物濃度が高い高不純物濃度領域120cが設けられる点で上述の実施の形態と相違する。基板120は、第1導電型の不純物濃度が低いバルク領域120dと、第1導電型の不純物濃度が高い高不純物濃度領域120cと、を含む。高不純物濃度領域120cは、図7に示されるように、第2主面20bを下から見た場合には第1領域W1の第2主面20bの直上に位置する。図7の上下を反対にして、第2主面20bを上から見た場合には第1領域W1の第2主面20bの直下に位置すると言える。
図8は、変形例に係る太陽電池セル210の構成を示す断面図である。本変形例では、第1領域W1の第2主面20bと第1半導体層21の間に高不純物濃度層244がさらに設けられる点で上述の実施の形態と相違する。高不純物濃度層244は、上述の変形例と同様、第1導電型の不純物濃度が高い部分であり、例えば第1導電型の不純物としてリン(P)を含む。
図9は、変形例に係る太陽電池セル310の構成を示す断面図である。本変形例では、第2主面20bと第1半導体層21の間に第1酸化物層327が設けられ、第2主面20bと第2半導体層22の間に第2酸化物層328が設けられる点で上述の実施の形態と相違する。
図10は、変形例に係る太陽電池セル410の構成を示す断面図である。本変形例では、第1結晶性半導体部435がベース層435aと、ベース層435aから第1透明電極層23に向けて延びる複数の柱状部435bとを含む点で上述の実施の形態と異なる。
Claims (18)
- 第1導電型の結晶性半導体の基板と、
前記基板の一主面の第1領域上に設けられる第1半導体層と、
前記一主面の前記第1領域と異なる第2領域上に設けられる第2半導体層と、
前記第1半導体層上に設けられる第1透明電極層と、
前記第2半導体層上に設けられる第2透明電極層と、を備え、
前記第1半導体層は、前記第1導電型の第1非晶質半導体層と、前記一主面から前記第1透明電極層に向けて前記第1透明電極層に達するように延びる第1結晶性半導体部と、を含み、
前記第2半導体層は、前記第1導電型と異なる第2導電型の第2非晶質半導体層と、前記一主面上に設けられる第2結晶性半導体部と、を含み、
前記第2領域の単位面積あたりに設けられる第2結晶性半導体部の量は、前記第1領域の単位面積あたりに設けられる第1結晶性半導体部の量よりも少ない、太陽電池セル。 - 前記第1半導体層は、前記一主面と前記第1非晶質半導体層との間に設けられ、実質的に真性な第3非晶質半導体層をさらに含む、請求項1に記載の太陽電池セル。
- 前記第1結晶性半導体部は、前記第1非晶質半導体層および前記第3非晶質半導体層を貫通して前記第1透明電極層に達するように設けられる、請求項2に記載の太陽電池セル。
- 前記第2非晶質半導体層は、少なくとも前記一主面と接する部分の膜密度が前記第1半導体層の前記一主面と接する部分よりも低い、請求項1から3のいずれか一項に記載の太陽電池セル。
- 前記第2半導体層は、前記一主面と前記第2非晶質半導体層との間に設けられ、実質的に真性な第4非晶質半導体層をさらに含む、請求項1から4のいずれか一項に記載の太陽電池セル。
- 前記第4非晶質半導体層は、少なくとも前記一主面と接する部分の膜密度が前記第1半導体層の前記一主面と接する部分よりも低い、請求項5に記載の太陽電池セル。
- 前記第2結晶性半導体部は、前記第4非晶質半導体層を貫通しないように設けられる、請求項5または6に記載の太陽電池セル。
- 前記第1結晶性半導体部は、前記第1領域上に部分的に設けられる、請求項1から7のいずれか一項に記載の太陽電池セル。
- 前記第1結晶性半導体部は、前記第1領域の半分以上を被覆するように設けられるベース層と、前記ベース層から前記第1透明電極層に向けて延びる柱状部とを有する、請求項1から8のいずれか一項に記載の太陽電池セル。
- 前記第1非晶質半導体層は、前記基板よりも前記第1導電型の不純物濃度が高い、請求項1から9のいずれか一項に記載の太陽電池セル。
- 前記第1結晶性半導体部の前記一主面からの高さは、前記第2結晶性半導体部の前記一主面からの高さよりも大きい、請求項1から10のいずれか一項に記載の太陽電池セル。
- 前記第2結晶性半導体部は、前記第2透明電極層に達しないように設けられる、請求項1から11のいずれか一項に記載の太陽電池セル。
- 前記第1領域は、前記第2領域よりも狭い、請求項1から12のいずれか一項に記載の太陽電池セル。
- 前記基板は、前記第1領域内の前記一主面の直下に設けられ、前記基板の他の部分よりも前記第1導電型の不純物濃度が高い高不純物濃度領域を有する、請求項1から13のいずれか一項に記載の太陽電池セル。
- 前記一主面と前記第1半導体層の間に設けられ、前記基板よりも前記第1導電型の不純物濃度が高い高不純物濃度層をさらに備える、請求項1から14のいずれか一項に記載の太陽電池セル。
- 前記一主面と前記第1半導体層の間であって前記第1領域上に少なくとも部分的に設けられる第1酸化物層をさらに備える、請求項1から15のいずれか一項に記載の太陽電池セル。
- 前記一主面と前記第2半導体層の間であって前記第2領域上に少なくとも部分的に設けられる第2酸化物層をさらに備え、前記第2酸化物層の厚さは、前記第1酸化物層の厚さより大きい、請求項16に記載の太陽電池セル。
- 第1導電型の結晶性半導体の基板の一主面上の第1領域に第1半導体層を形成し、
前記一主面の前記第1領域と異なる第2領域上に第2半導体層を形成し、
前記第1半導体層上および前記第2半導体層上に透明電極層を形成する太陽電池セルの製造方法であって、
前記第1半導体層は、前記第1導電型の第1非晶質半導体層と、前記一主面から前記透明電極層に向けて前記透明電極層に達するように延びる第1結晶性半導体部と、を含み、
前記第2半導体層は、前記第1導電型と異なる第2導電型の第2非晶質半導体層と、前記一主面上に設けられる第2結晶性半導体部と、を含み、
前記第2領域の単位面積あたりに設けられる第2結晶性半導体部の量は、前記第1領域の単位面積あたりに設けられる第1結晶性半導体部の量よりも少なく、
前記第1非晶質半導体層および前記第1結晶性半導体部を同時に形成し、
前記第2非晶質半導体層および前記第2結晶性半導体部を同時に形成する、太陽電池セルの製造方法。
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