JP6048940B2 - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- JP6048940B2 JP6048940B2 JP2013533547A JP2013533547A JP6048940B2 JP 6048940 B2 JP6048940 B2 JP 6048940B2 JP 2013533547 A JP2013533547 A JP 2013533547A JP 2013533547 A JP2013533547 A JP 2013533547A JP 6048940 B2 JP6048940 B2 JP 6048940B2
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- semiconductor layer
- amorphous semiconductor
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- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 59
- 239000000758 substrate Substances 0.000 claims description 36
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 239000002019 doping agent Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000002161 passivation Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Sustainable Energy (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Description
図1及び図2に示されるように、太陽電池1は、光電変換部10を有する。光電変換部10は、受光した際に正孔や電子などのキャリアを発生させる部材である。
図5に示される太陽電池2は、n型領域12n及びp型領域12pの構成において太陽電池1と異なり、その他は太陽電池1と実質的に同様の構成を有する。
10…光電変換部
10a…第1の主面
10b…第2の主面
11…半導体材料からなる基板
12…i型非晶質半導体層
12i…i型領域
12n…n型領域
12p…p型領域
21…n側電極
22…p側電極
Claims (5)
- 光電変換部と、
前記光電変換部の上に配されたp側電極及びn側電極と、
を備え、
前記光電変換部は、
半導体材料からなる基板と、
前記p側電極及び前記n側電極と前記基板との間に配された実質的に真性なi型非晶質半導体層と、
を有し、
前記i型非晶質半導体層の前記p側電極と前記基板との間に位置している部分に、p型ドーパントが拡散しており、且つ結晶化されたp型領域が設けられており、
前記i型非晶質半導体層の前記n側電極と前記基板との間に位置している部分に、n型ドーパントが拡散しており、且つ結晶化されたn型領域が設けられており、
前記p型領域及び前記n型領域が前記i型非晶質半導体層の前記基板とは反対側の表面から前記基板側の表面に跨がって設けられている、太陽電池。 - 請求項1に記載の太陽電池であって、
前記i型非晶質半導体層は、前記p型領域及び前記n型領域と前記基板との間に、実質的に真性なi型領域を有する。 - 請求項1または2に記載の太陽電池であって、
前記i型非晶質半導体層の厚みが、10nm以上である。 - 半導体材料からなる基板の上に実質的に真性なi型非晶質半導体層を形成する工程と、
前記i型非晶質半導体層の一の部分に、p型ドーパントをドープすると共に、当該一の部分を結晶化させる工程と、
前記i型非晶質半導体層の他の部分に、n型ドーパントをドープすると共に、当該他の部分を結晶化させる工程と、
前記i型非晶質半導体層の一の部分の上にp側電極を形成する工程と、
前記i型非晶質半導体層の他の部分の上にn側電極を形成する工程と、
を備える太陽電池の製造方法。 - 請求項4に記載の太陽電池の製造方法であって、
前記i型非晶質半導体層の厚みが、10nm以上である。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011197869 | 2011-09-12 | ||
JP2011197869 | 2011-09-12 | ||
PCT/JP2012/066111 WO2013038768A1 (ja) | 2011-09-12 | 2012-06-25 | 太陽電池及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2013038768A1 JPWO2013038768A1 (ja) | 2015-03-23 |
JP6048940B2 true JP6048940B2 (ja) | 2016-12-21 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2013533547A Expired - Fee Related JP6048940B2 (ja) | 2011-09-12 | 2012-06-25 | 太陽電池及びその製造方法 |
Country Status (2)
Country | Link |
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JP (1) | JP6048940B2 (ja) |
WO (1) | WO2013038768A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102173644B1 (ko) * | 2014-01-29 | 2020-11-03 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
JP6778816B2 (ja) * | 2017-03-29 | 2020-11-04 | パナソニック株式会社 | 太陽電池セル及び太陽電池セルの製造方法 |
JP2018170482A (ja) * | 2017-03-30 | 2018-11-01 | パナソニック株式会社 | 太陽電池セル及び太陽電池セルの製造方法 |
JP6938304B2 (ja) * | 2017-09-21 | 2021-09-22 | 株式会社カネカ | バックコンタクト型太陽電池 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2699867B2 (ja) * | 1994-04-28 | 1998-01-19 | 株式会社日立製作所 | 薄膜太陽電池とその製造方法 |
JP2007281156A (ja) * | 2006-04-06 | 2007-10-25 | Japan Advanced Institute Of Science & Technology Hokuriku | 裏面電極型半導体へテロ接合太陽電池ならびにその製造方法と製造装置 |
FR2906406B1 (fr) * | 2006-09-26 | 2008-12-19 | Commissariat Energie Atomique | Procede de realisation de cellule photovoltaique a heterojonction en face arriere. |
JP2008085374A (ja) * | 2007-12-19 | 2008-04-10 | Sanyo Electric Co Ltd | 光起電力素子 |
EP2239788A4 (en) * | 2008-01-30 | 2017-07-12 | Kyocera Corporation | Solar battery element and solar battery element manufacturing method |
JP2011009733A (ja) * | 2009-05-28 | 2011-01-13 | Kyocera Corp | 太陽電池素子、太陽電池モジュールおよび太陽光発電装置 |
-
2012
- 2012-06-25 JP JP2013533547A patent/JP6048940B2/ja not_active Expired - Fee Related
- 2012-06-25 WO PCT/JP2012/066111 patent/WO2013038768A1/ja active Application Filing
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Publication number | Publication date |
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JPWO2013038768A1 (ja) | 2015-03-23 |
WO2013038768A1 (ja) | 2013-03-21 |
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