JP6766886B2 - 無線受信機および無線受信方法 - Google Patents
無線受信機および無線受信方法 Download PDFInfo
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- JP6766886B2 JP6766886B2 JP2018555414A JP2018555414A JP6766886B2 JP 6766886 B2 JP6766886 B2 JP 6766886B2 JP 2018555414 A JP2018555414 A JP 2018555414A JP 2018555414 A JP2018555414 A JP 2018555414A JP 6766886 B2 JP6766886 B2 JP 6766886B2
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- 238000000034 method Methods 0.000 title claims description 9
- 230000008859 change Effects 0.000 claims description 14
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- 238000001514 detection method Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- 230000035945 sensitivity Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
- G05D23/24—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1433—Balanced arrangements with transistors using bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1458—Double balanced arrangements, i.e. where both input signals are differential
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/16—Multiple-frequency-changing
- H03D7/165—Multiple-frequency-changing at least two frequency changers being located in different paths, e.g. in two paths with carriers in quadrature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/191—Tuned amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
- H03F3/45085—Long tailed pairs
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
- H04B1/18—Input circuits, e.g. for coupling to an antenna or a transmission line
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
- H04B1/30—Circuits for homodyne or synchrodyne receivers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0001—Circuit elements of demodulators
- H03D2200/0023—Balun circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0041—Functional aspects of demodulators
- H03D2200/0082—Quadrature arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0041—Functional aspects of demodulators
- H03D2200/0094—Measures to address temperature induced variations of demodulation
- H03D2200/0098—Measures to address temperature induced variations of demodulation by compensating temperature induced variations
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45481—Indexing scheme relating to differential amplifiers the CSC comprising only a direct connection to the supply voltage, no other components being present
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45662—Indexing scheme relating to differential amplifiers the LC comprising inductive coupled loading elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45731—Indexing scheme relating to differential amplifiers the LC comprising a transformer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Amplifiers (AREA)
- Circuits Of Receivers In General (AREA)
Description
101 アンテナ
102 LNA(Low Noise Amplifier)
1021 第1のLNA
1022 1022
1023 第2のLNA
103 局部発振器
1031 局部発振器
1032 逓倍器
104 LOA(Local Oscillator Amplifier)
1041 増幅回路
1042 分配器
1043a、b 増幅回路
1044 BGR
105 BIAS
106 バラン
107 モニタ回路
1071〜1073 抵抗
1074 A/Dコンバータ
108 ミキサ
1081 第1のミキサ
1082 第2のミキサ
109 IFA
110 ICChip
200 BBF(ベースバンドフィルタ)
300 A/Dコンバータ。
Claims (6)
- 入力された信号の周波数を変換して出力する回路であって、電源(VDD)と出力端子(IFout)とに接続された抵抗と、グランドと入力端子(RFin)とに接続された抵抗とを備え、2つの前記抵抗のうちの一方が第1の温度特性を有する第1の抵抗(1081、1085)であり、他方が、前記第1の抵抗とは異なる温度特性を有する第2の抵抗(1089、1091)であることで、温度が変化したときに利得が変化する第1の回路(108)と、
前記第1の抵抗と同じ特性である抵抗(1072)と前記第2の抵抗と同じ特性である抵抗(1073)とを有した抵抗分圧回路であって、前記第1の抵抗と同じ特性である抵抗の出力値および前記第2の抵抗と同じ特性である抵抗の出力値、または前記第1の抵抗と同じ特性である抵抗の出力値と前記第2の抵抗と同じ特性である抵抗の出力値との比を出力する第2の回路(107)と、
前記第2の回路から出力された2つの出力値から算出する出力値の比、または前記第2の回路から出力された比が閾値以上の変化があったと判定した場合に、前記利得の変化を低減するように、前記第1の回路の利得を切り替える第3の回路(110)と、
を備えることを特徴とする無線受信機。 - 前記第1の抵抗および前記第1の抵抗と同じ特性である抵抗は、正または負の温度特性を有した抵抗から構成され、前記第2の抵抗および前記第2の抵抗と同じ特性である抵抗は、温度特性を有さない抵抗から構成される、
ことを特徴とする請求項1に記載の無線受信機。 - 前記第1の抵抗および前記第1の抵抗と同じ特性である抵抗は、正または負の温度特性を有した抵抗から構成され、前記第2の抵抗および前記第2の抵抗と同じ特性である抵抗は、負または正の温度特性を有した抵抗から構成される、
ことを特徴とする請求項1に記載の無線受信機。 - 前記第2の回路は、ミキサ回路または中間周波数増幅回路として構成されている、
ことを特徴とする請求項1に記載の無線受信機。 - 前記第3の回路が、前記第1の回路と前記第2の回路とを含む受信ブロックに配置されている、
ことを特徴とする請求項1に記載の無線受信機。 - 入力された信号の周波数を変換して出力する回路であって、電源(VDD)と出力端子(IFout)とに接続された抵抗と、グランドと入力端子(RFin)とに接続された抵抗とを備え、2つの前記抵抗のうちの一方が第1の温度特性を有する第1の抵抗(1081、1085)であり、他方が、前記第1の抵抗とは異なる温度特性を有する第2の抵抗(1089、1091)であることで、温度が変化したときに利得が変化する第1の回路(108)の利得を切り替える無線受信方法であって、
前記第1の抵抗と同じ特性である抵抗(1072)と前記第2の抵抗と同じ特性である抵抗(1073)とを有した抵抗分圧回路が、前記第1の抵抗と同じ特性である抵抗の出力値および前記第2の抵抗と同じ特性である抵抗の出力値、または前記第1の抵抗と同じ特性である抵抗の出力値と前記第2の抵抗と同じ特性である抵抗の出力値との比を出力し、
出力された2つの出力値から算出する出力値の比、または、出力された比が閾値以上の変化があったと判定した場合に、前記利得の変化を低減するように、前記第1の回路の利得を切り替える、
ことを特徴とする無線受信方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2016/086733 WO2018105101A1 (ja) | 2016-12-09 | 2016-12-09 | 無線受信機および無線受信方法 |
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JPWO2018105101A1 JPWO2018105101A1 (ja) | 2019-06-24 |
JP6766886B2 true JP6766886B2 (ja) | 2020-10-14 |
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JP2018555414A Active JP6766886B2 (ja) | 2016-12-09 | 2016-12-09 | 無線受信機および無線受信方法 |
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US (1) | US10868501B2 (ja) |
JP (1) | JP6766886B2 (ja) |
WO (1) | WO2018105101A1 (ja) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001177063A (ja) * | 1999-12-16 | 2001-06-29 | Mitsumi Electric Co Ltd | 半導体装置及び増幅回路並びにアクティブフィルタ |
JP4099580B2 (ja) * | 2003-03-27 | 2008-06-11 | ソニー株式会社 | 電力増幅器 |
JP5061587B2 (ja) * | 2006-11-16 | 2012-10-31 | 富士通株式会社 | 半導体集積回路 |
JP2010239191A (ja) * | 2009-03-30 | 2010-10-21 | Mitsubishi Electric Corp | 半導体集積回路 |
CN102640414B (zh) * | 2010-11-12 | 2015-01-07 | 旭化成微电子株式会社 | 混合电路 |
US10823693B2 (en) * | 2018-01-04 | 2020-11-03 | Silicon Laboratories Inc. | System, apparatus and method for accurate measurement of off-chip temperature |
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2016
- 2016-12-09 WO PCT/JP2016/086733 patent/WO2018105101A1/ja active Application Filing
- 2016-12-09 JP JP2018555414A patent/JP6766886B2/ja active Active
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2019
- 2019-01-31 US US16/263,138 patent/US10868501B2/en active Active
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Publication number | Publication date |
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US20190165741A1 (en) | 2019-05-30 |
WO2018105101A1 (ja) | 2018-06-14 |
US10868501B2 (en) | 2020-12-15 |
JPWO2018105101A1 (ja) | 2019-06-24 |
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