JP6760955B2 - セリア粒子を含有する研磨組成物及び使用方法 - Google Patents

セリア粒子を含有する研磨組成物及び使用方法 Download PDF

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Publication number
JP6760955B2
JP6760955B2 JP2017546641A JP2017546641A JP6760955B2 JP 6760955 B2 JP6760955 B2 JP 6760955B2 JP 2017546641 A JP2017546641 A JP 2017546641A JP 2017546641 A JP2017546641 A JP 2017546641A JP 6760955 B2 JP6760955 B2 JP 6760955B2
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Prior art keywords
polishing composition
ceria particles
substrate
mechanical polishing
chemical mechanical
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Japanese (ja)
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JP2018513552A (ja
JP2018513552A5 (enExample
Inventor
ライス ブライアン
ライス ブライアン
ベト ラム
ベト ラム
レンホー ジア
レンホー ジア
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CMC Materials LLC
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Cabot Microelectronics Corp
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224—Oxides or hydroxides of lanthanides
    • C01F17/235—Cerium oxides or hydroxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H10P52/402—
    • H10P95/062—
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/51—Particles with a specific particle size distribution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
JP2017546641A 2015-03-05 2016-03-04 セリア粒子を含有する研磨組成物及び使用方法 Active JP6760955B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562128802P 2015-03-05 2015-03-05
US62/128,802 2015-03-05
US15/056,198 US10414947B2 (en) 2015-03-05 2016-02-29 Polishing composition containing ceria particles and method of use
US15/056,198 2016-02-29
PCT/US2016/020809 WO2016141260A1 (en) 2015-03-05 2016-03-04 Polishing composition containing ceria particles and method of use

Publications (3)

Publication Number Publication Date
JP2018513552A JP2018513552A (ja) 2018-05-24
JP2018513552A5 JP2018513552A5 (enExample) 2019-03-28
JP6760955B2 true JP6760955B2 (ja) 2020-09-23

Family

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Application Number Title Priority Date Filing Date
JP2017546641A Active JP6760955B2 (ja) 2015-03-05 2016-03-04 セリア粒子を含有する研磨組成物及び使用方法

Country Status (7)

Country Link
US (1) US10414947B2 (enExample)
EP (1) EP3265526B1 (enExample)
JP (1) JP6760955B2 (enExample)
KR (1) KR102605260B1 (enExample)
CN (1) CN107429121B (enExample)
TW (1) TWI580768B (enExample)
WO (1) WO2016141260A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102463863B1 (ko) * 2015-07-20 2022-11-04 삼성전자주식회사 연마용 조성물 및 이를 이용한 반도체 장치의 제조 방법
KR101823083B1 (ko) * 2016-09-07 2018-01-30 주식회사 케이씨텍 표면개질된 콜로이달 세리아 연마입자, 그의 제조방법 및 그를 포함하는 연마 슬러리 조성물
JP7326166B2 (ja) 2017-06-15 2023-08-15 ローディア オペレーションズ セリウム系粒子
CN109986458B (zh) * 2017-12-29 2021-02-05 长鑫存储技术有限公司 缓研磨去除多晶硅表面凸块缺陷的方法及半导体工艺方法
CN114599750A (zh) 2019-10-22 2022-06-07 Cmc材料股份有限公司 用于硅氧化物和碳掺杂的硅氧化物的化学机械抛光的组合物及方法
EP4048747A4 (en) * 2019-10-22 2023-10-25 CMC Materials, Inc. COMPOSITION AND AUTO-STOP POLISHING METHOD
EP4048748A4 (en) 2019-10-22 2023-11-08 CMC Materials, Inc. Composition and method for selective oxide cmp
IL292956A (en) 2019-11-26 2022-07-01 Rhodia Operations Liquid and powder dispersion of cerium-based core-shell particles, process for their production and use in polishing
KR102373924B1 (ko) * 2020-10-26 2022-03-15 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법
CN112758974A (zh) * 2021-01-04 2021-05-07 上海晖研材料科技有限公司 一种氧化铈颗粒的制备方法
CN112723405A (zh) * 2021-01-04 2021-04-30 上海晖研材料科技有限公司 一种氧化铈颗粒及含其的抛光浆料
CN112680115A (zh) * 2021-01-04 2021-04-20 上海晖研材料科技有限公司 一种氧化铈颗粒在抛光工艺中的应用
CN117321170A (zh) 2021-05-17 2023-12-29 罗地亚经营管理公司 基于铈的核-壳颗粒的液体分散体和粉末、其生产方法及其在抛光中的用途
KR102765948B1 (ko) * 2021-05-20 2025-02-11 주식회사 한국나노오트 연마용 세리아 입자 및 이를 포함하는 슬러리
KR20250026269A (ko) * 2022-06-17 2025-02-25 로디아 오퍼레이션스 세륨 산화물 입자의 현탁액
CN115960540A (zh) * 2022-12-23 2023-04-14 昂士特科技(深圳)有限公司 具有改进颗粒的化学机械抛光组合物
WO2025132262A1 (en) 2023-12-21 2025-06-26 Rhodia Operations Aqueous dispersion comprising particles of cerium oxide with adsorbed polyoxometalates species thereon, process for producing the same and use thereof in polishing
WO2025190482A1 (en) 2024-03-13 2025-09-18 Rhodia Operations Cerium oxide particles with cotrolled microstructure
CN119736068B (zh) * 2025-02-05 2025-08-08 珠海基石科技有限公司 一种粒子及其分散液、平整化组合物及其应用、半导体器件及其用基底的平整化方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US5264010A (en) * 1992-04-27 1993-11-23 Rodel, Inc. Compositions and methods for polishing and planarizing surfaces
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US6454821B1 (en) * 2000-06-21 2002-09-24 Praxair S. T. Technology, Inc. Polishing composition and method
JPWO2002067309A1 (ja) 2001-02-20 2004-06-24 日立化成工業株式会社 研磨剤及び基板の研磨方法
JP4231632B2 (ja) * 2001-04-27 2009-03-04 花王株式会社 研磨液組成物
US6705926B2 (en) * 2001-10-24 2004-03-16 Cabot Microelectronics Corporation Boron-containing polishing system and method
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US7044836B2 (en) 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
ES2436215T3 (es) * 2003-07-11 2013-12-27 W.R. Grace & Co. - Conn. Partículas abrasivas para pulido químico-mecánico
JP2005138197A (ja) * 2003-11-04 2005-06-02 Fujimi Inc 研磨用組成物及び研磨方法
US7470295B2 (en) 2004-03-12 2008-12-30 K.C. Tech Co., Ltd. Polishing slurry, method of producing same, and method of polishing substrate
JP2006100538A (ja) 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
US7531105B2 (en) 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20060096179A1 (en) 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
CN105368397B (zh) 2008-04-23 2017-11-03 日立化成株式会社 研磨剂、研磨剂组件及使用该研磨剂的基板研磨方法
CN101608097B (zh) * 2009-07-14 2011-12-21 上海华明高纳稀土新材料有限公司 化学机械抛光用纳米氧化铈浆液及其制备方法
CN102473622B (zh) * 2009-10-22 2013-10-16 日立化成株式会社 研磨剂、浓缩一液式研磨剂、二液式研磨剂以及基板研磨方法
EP2739984B1 (en) 2011-08-01 2019-05-01 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. An rf coil assembly for mri with a plurality of coil elements distributed over at least two coil rows
SG10201606827RA (en) 2012-02-21 2016-10-28 Hitachi Chemical Co Ltd Polishing agent, polishing agent set, and substrate polishing method
TWI573864B (zh) 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
US8916061B2 (en) * 2012-03-14 2014-12-23 Cabot Microelectronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
US9633863B2 (en) * 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
JP6209845B2 (ja) * 2013-04-11 2017-10-11 日立化成株式会社 研磨液、研磨液セット及び基体の研磨方法
JP6493207B2 (ja) * 2013-06-27 2019-04-03 コニカミノルタ株式会社 酸化セリウム研磨材の製造方法

Also Published As

Publication number Publication date
KR20170125379A (ko) 2017-11-14
WO2016141260A1 (en) 2016-09-09
JP2018513552A (ja) 2018-05-24
US10414947B2 (en) 2019-09-17
KR102605260B1 (ko) 2023-11-24
US20160257855A1 (en) 2016-09-08
TWI580768B (zh) 2017-05-01
EP3265526A4 (en) 2018-12-05
EP3265526B1 (en) 2021-04-14
CN107429121A (zh) 2017-12-01
TW201704440A (zh) 2017-02-01
EP3265526A1 (en) 2018-01-10
CN107429121B (zh) 2019-09-03

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