JP6760955B2 - セリア粒子を含有する研磨組成物及び使用方法 - Google Patents

セリア粒子を含有する研磨組成物及び使用方法 Download PDF

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Publication number
JP6760955B2
JP6760955B2 JP2017546641A JP2017546641A JP6760955B2 JP 6760955 B2 JP6760955 B2 JP 6760955B2 JP 2017546641 A JP2017546641 A JP 2017546641A JP 2017546641 A JP2017546641 A JP 2017546641A JP 6760955 B2 JP6760955 B2 JP 6760955B2
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Prior art keywords
polishing composition
ceria particles
substrate
mechanical polishing
chemical mechanical
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JP2018513552A5 (enExample
JP2018513552A (ja
Inventor
ライス ブライアン
ライス ブライアン
ベト ラム
ベト ラム
レンホー ジア
レンホー ジア
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CMC Materials LLC
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Cabot Microelectronics Corp
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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01FCOMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00Compounds of rare earth metals
    • C01F17/20Compounds containing only rare earth metals as the metal element
    • C01F17/206Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224Oxides or hydroxides of lanthanides
    • C01F17/235Cerium oxides or hydroxides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/402Chemomechanical polishing [CMP] of semiconductor materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06Planarisation of inorganic insulating materials
    • H10P95/062Planarisation of inorganic insulating materials involving a dielectric removal step
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/80Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/51Particles with a specific particle size distribution
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/62Submicrometer sized, i.e. from 0.1-1 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/64Nanometer sized, i.e. from 1-100 nanometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/12Surface area

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2017546641A 2015-03-05 2016-03-04 セリア粒子を含有する研磨組成物及び使用方法 Active JP6760955B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562128802P 2015-03-05 2015-03-05
US62/128,802 2015-03-05
US15/056,198 US10414947B2 (en) 2015-03-05 2016-02-29 Polishing composition containing ceria particles and method of use
US15/056,198 2016-02-29
PCT/US2016/020809 WO2016141260A1 (en) 2015-03-05 2016-03-04 Polishing composition containing ceria particles and method of use

Publications (3)

Publication Number Publication Date
JP2018513552A JP2018513552A (ja) 2018-05-24
JP2018513552A5 JP2018513552A5 (enExample) 2019-03-28
JP6760955B2 true JP6760955B2 (ja) 2020-09-23

Family

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JP2017546641A Active JP6760955B2 (ja) 2015-03-05 2016-03-04 セリア粒子を含有する研磨組成物及び使用方法

Country Status (7)

Country Link
US (1) US10414947B2 (enExample)
EP (1) EP3265526B1 (enExample)
JP (1) JP6760955B2 (enExample)
KR (1) KR102605260B1 (enExample)
CN (1) CN107429121B (enExample)
TW (1) TWI580768B (enExample)
WO (1) WO2016141260A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102463863B1 (ko) * 2015-07-20 2022-11-04 삼성전자주식회사 연마용 조성물 및 이를 이용한 반도체 장치의 제조 방법
KR101823083B1 (ko) * 2016-09-07 2018-01-30 주식회사 케이씨텍 표면개질된 콜로이달 세리아 연마입자, 그의 제조방법 및 그를 포함하는 연마 슬러리 조성물
CN110740974B (zh) 2017-06-15 2022-06-21 罗地亚经营管理公司 基于铈的颗粒
CN109986458B (zh) * 2017-12-29 2021-02-05 长鑫存储技术有限公司 缓研磨去除多晶硅表面凸块缺陷的方法及半导体工艺方法
US20210115301A1 (en) * 2019-10-22 2021-04-22 Cabot Microelectronics Corporation nka CMC Materials, Inc. Self-stopping polishing composition and method
JP7830317B2 (ja) 2019-10-22 2026-03-16 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー 選択的酸化物cmpのための組成物及び方法
TWI764338B (zh) 2019-10-22 2022-05-11 美商Cmc材料股份有限公司 用於氧化矽和碳摻雜之氧化矽化學機械拋光的組合物及方法
KR20220103785A (ko) 2019-11-26 2022-07-22 로디아 오퍼레이션스 세륨계 코어-셸 입자의 액체 분산물 및 분말, 이를 생성하기 위한 공정 및 폴리싱에서의 이의 용도
KR102373924B1 (ko) * 2020-10-26 2022-03-15 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법
CN112758974A (zh) * 2021-01-04 2021-05-07 上海晖研材料科技有限公司 一种氧化铈颗粒的制备方法
CN112723405A (zh) * 2021-01-04 2021-04-30 上海晖研材料科技有限公司 一种氧化铈颗粒及含其的抛光浆料
CN112680115A (zh) * 2021-01-04 2021-04-20 上海晖研材料科技有限公司 一种氧化铈颗粒在抛光工艺中的应用
JP2024519796A (ja) 2021-05-17 2024-05-21 ローディア オペレーションズ セリウム系コア-シェル粒子の液体分散液及び粉末、これを製造するための方法並びに研磨におけるその使用
KR102765948B1 (ko) * 2021-05-20 2025-02-11 주식회사 한국나노오트 연마용 세리아 입자 및 이를 포함하는 슬러리
IL317743A (en) * 2022-06-17 2025-02-01 Rhodia Operations Suspension containing cerium oxide particles and its uses
CN115960540A (zh) * 2022-12-23 2023-04-14 昂士特科技(深圳)有限公司 具有改进颗粒的化学机械抛光组合物
WO2025132262A1 (en) 2023-12-21 2025-06-26 Rhodia Operations Aqueous dispersion comprising particles of cerium oxide with adsorbed polyoxometalates species thereon, process for producing the same and use thereof in polishing
WO2025190482A1 (en) 2024-03-13 2025-09-18 Rhodia Operations Cerium oxide particles with cotrolled microstructure
CN119736068B (zh) * 2025-02-05 2025-08-08 珠海基石科技有限公司 一种粒子及其分散液、平整化组合物及其应用、半导体器件及其用基底的平整化方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US5264010A (en) * 1992-04-27 1993-11-23 Rodel, Inc. Compositions and methods for polishing and planarizing surfaces
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US6454821B1 (en) * 2000-06-21 2002-09-24 Praxair S. T. Technology, Inc. Polishing composition and method
WO2002067309A1 (en) 2001-02-20 2002-08-29 Hitachi Chemical Co., Ltd. Polishing compound and method for polishing substrate
JP4231632B2 (ja) * 2001-04-27 2009-03-04 花王株式会社 研磨液組成物
US6705926B2 (en) * 2001-10-24 2004-03-16 Cabot Microelectronics Corporation Boron-containing polishing system and method
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US7044836B2 (en) 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
BRPI0412515A (pt) * 2003-07-11 2006-09-19 Grace W R & Co partìculas abrasivas para polimento quìmico mecánico
JP2005138197A (ja) * 2003-11-04 2005-06-02 Fujimi Inc 研磨用組成物及び研磨方法
US7470295B2 (en) 2004-03-12 2008-12-30 K.C. Tech Co., Ltd. Polishing slurry, method of producing same, and method of polishing substrate
JP2006100538A (ja) 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
US7531105B2 (en) 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20060096179A1 (en) 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
TWI546373B (zh) 2008-04-23 2016-08-21 日立化成股份有限公司 研磨劑及其製造方法、基板研磨方法以及研磨劑套組及其製造方法
CN101608097B (zh) * 2009-07-14 2011-12-21 上海华明高纳稀土新材料有限公司 化学机械抛光用纳米氧化铈浆液及其制备方法
US8728341B2 (en) 2009-10-22 2014-05-20 Hitachi Chemical Company, Ltd. Polishing agent, concentrated one-pack type polishing agent, two-pack type polishing agent and method for polishing substrate
WO2013017139A1 (en) 2011-08-01 2013-02-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e. V. An rf coil assembly for mri with a plurality of coil elements distributed over at least two coil rows
SG11201405091TA (en) 2012-02-21 2014-09-26 Hitachi Chemical Co Ltd Polishing agent, polishing agent set, and substrate polishing method
TWI573864B (zh) 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之cmp組成物
US8916061B2 (en) 2012-03-14 2014-12-23 Cabot Microelectronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
US9633863B2 (en) * 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
JP6209845B2 (ja) 2013-04-11 2017-10-11 日立化成株式会社 研磨液、研磨液セット及び基体の研磨方法
US10047262B2 (en) * 2013-06-27 2018-08-14 Konica Minolta, Inc. Cerium oxide abrasive, method for producing cerium oxide abrasive, and polishing method

Also Published As

Publication number Publication date
TWI580768B (zh) 2017-05-01
TW201704440A (zh) 2017-02-01
EP3265526A4 (en) 2018-12-05
EP3265526A1 (en) 2018-01-10
KR102605260B1 (ko) 2023-11-24
EP3265526B1 (en) 2021-04-14
CN107429121B (zh) 2019-09-03
CN107429121A (zh) 2017-12-01
WO2016141260A1 (en) 2016-09-09
US10414947B2 (en) 2019-09-17
US20160257855A1 (en) 2016-09-08
JP2018513552A (ja) 2018-05-24
KR20170125379A (ko) 2017-11-14

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