TWI580768B - 含有氧化鈰粒子之拋光組合物及使用方法 - Google Patents

含有氧化鈰粒子之拋光組合物及使用方法 Download PDF

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Publication number
TWI580768B
TWI580768B TW105106774A TW105106774A TWI580768B TW I580768 B TWI580768 B TW I580768B TW 105106774 A TW105106774 A TW 105106774A TW 105106774 A TW105106774 A TW 105106774A TW I580768 B TWI580768 B TW I580768B
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Taiwan
Prior art keywords
polishing composition
cerium oxide
oxide particles
chemical mechanical
substrate
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TW105106774A
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English (en)
Chinese (zh)
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TW201704440A (zh
Inventor
布萊恩 萊斯
越 林
賈仁合
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卡博特微電子公司
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Publication of TW201704440A publication Critical patent/TW201704440A/zh
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224—Oxides or hydroxides of lanthanides
    • C01F17/235—Cerium oxides or hydroxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/51—Particles with a specific particle size distribution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW105106774A 2015-03-05 2016-03-04 含有氧化鈰粒子之拋光組合物及使用方法 TWI580768B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562128802P 2015-03-05 2015-03-05
US15/056,198 US10414947B2 (en) 2015-03-05 2016-02-29 Polishing composition containing ceria particles and method of use

Publications (2)

Publication Number Publication Date
TW201704440A TW201704440A (zh) 2017-02-01
TWI580768B true TWI580768B (zh) 2017-05-01

Family

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Family Applications (1)

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TW105106774A TWI580768B (zh) 2015-03-05 2016-03-04 含有氧化鈰粒子之拋光組合物及使用方法

Country Status (7)

Country Link
US (1) US10414947B2 (enExample)
EP (1) EP3265526B1 (enExample)
JP (1) JP6760955B2 (enExample)
KR (1) KR102605260B1 (enExample)
CN (1) CN107429121B (enExample)
TW (1) TWI580768B (enExample)
WO (1) WO2016141260A1 (enExample)

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KR20220085803A (ko) * 2019-10-22 2022-06-22 씨엠씨 머티리얼즈, 인코포레이티드 자가-정지 연마 조성물 및 방법
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CN114599754B (zh) 2019-11-26 2024-09-13 罗地亚经营管理公司 基于铈的核-壳颗粒的液体分散体和粉末、其生产方法及其在抛光中的用途
KR102373924B1 (ko) * 2020-10-26 2022-03-15 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법
CN112723405A (zh) * 2021-01-04 2021-04-30 上海晖研材料科技有限公司 一种氧化铈颗粒及含其的抛光浆料
CN112680115A (zh) * 2021-01-04 2021-04-20 上海晖研材料科技有限公司 一种氧化铈颗粒在抛光工艺中的应用
CN112758974A (zh) * 2021-01-04 2021-05-07 上海晖研材料科技有限公司 一种氧化铈颗粒的制备方法
TW202302460A (zh) 2021-05-17 2023-01-16 法商羅地亞經營管理公司 基於鈰的核－殼顆粒的液體分散體和粉末、其生產方法及其在拋光中之用途
KR102765948B1 (ko) * 2021-05-20 2025-02-11 주식회사 한국나노오트 연마용 세리아 입자 및 이를 포함하는 슬러리
JP2025520327A (ja) * 2022-06-17 2025-07-03 ローディア オペレーションズ 酸化セリウム粒子の懸濁液
CN115960540A (zh) * 2022-12-23 2023-04-14 昂士特科技(深圳)有限公司 具有改进颗粒的化学机械抛光组合物
WO2025132262A1 (en) 2023-12-21 2025-06-26 Rhodia Operations Aqueous dispersion comprising particles of cerium oxide with adsorbed polyoxometalates species thereon, process for producing the same and use thereof in polishing
WO2025190482A1 (en) 2024-03-13 2025-09-18 Rhodia Operations Cerium oxide particles with cotrolled microstructure
CN119736068B (zh) * 2025-02-05 2025-08-08 珠海基石科技有限公司 一种粒子及其分散液、平整化组合物及其应用、半导体器件及其用基底的平整化方法

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Also Published As

Publication number Publication date
KR102605260B1 (ko) 2023-11-24
CN107429121A (zh) 2017-12-01
TW201704440A (zh) 2017-02-01
US10414947B2 (en) 2019-09-17
WO2016141260A1 (en) 2016-09-09
EP3265526A4 (en) 2018-12-05
KR20170125379A (ko) 2017-11-14
JP6760955B2 (ja) 2020-09-23
EP3265526A1 (en) 2018-01-10
CN107429121B (zh) 2019-09-03
US20160257855A1 (en) 2016-09-08
EP3265526B1 (en) 2021-04-14
JP2018513552A (ja) 2018-05-24

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