CN107429121B - 含有铈土颗粒的抛光组合物及使用方法 - Google Patents

含有铈土颗粒的抛光组合物及使用方法 Download PDF

Info

Publication number
CN107429121B
CN107429121B CN201680013859.3A CN201680013859A CN107429121B CN 107429121 B CN107429121 B CN 107429121B CN 201680013859 A CN201680013859 A CN 201680013859A CN 107429121 B CN107429121 B CN 107429121B
Authority
CN
China
Prior art keywords
polishing composition
ceria particles
wet
chemical mechanical
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680013859.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN107429121A (zh
Inventor
B.赖斯
林越
贾仁合
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of CN107429121A publication Critical patent/CN107429121A/zh
Application granted granted Critical
Publication of CN107429121B publication Critical patent/CN107429121B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F17/00—Compounds of rare earth metals
    • C01F17/20—Compounds containing only rare earth metals as the metal element
    • C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
    • C01F17/224—Oxides or hydroxides of lanthanides
    • C01F17/235—Cerium oxides or hydroxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/51—Particles with a specific particle size distribution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201680013859.3A 2015-03-05 2016-03-04 含有铈土颗粒的抛光组合物及使用方法 Active CN107429121B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562128802P 2015-03-05 2015-03-05
US62/128,802 2015-03-05
US15/056,198 2016-02-29
US15/056,198 US10414947B2 (en) 2015-03-05 2016-02-29 Polishing composition containing ceria particles and method of use
PCT/US2016/020809 WO2016141260A1 (en) 2015-03-05 2016-03-04 Polishing composition containing ceria particles and method of use

Publications (2)

Publication Number Publication Date
CN107429121A CN107429121A (zh) 2017-12-01
CN107429121B true CN107429121B (zh) 2019-09-03

Family

ID=56848800

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680013859.3A Active CN107429121B (zh) 2015-03-05 2016-03-04 含有铈土颗粒的抛光组合物及使用方法

Country Status (7)

Country Link
US (1) US10414947B2 (enExample)
EP (1) EP3265526B1 (enExample)
JP (1) JP6760955B2 (enExample)
KR (1) KR102605260B1 (enExample)
CN (1) CN107429121B (enExample)
TW (1) TWI580768B (enExample)
WO (1) WO2016141260A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102463863B1 (ko) * 2015-07-20 2022-11-04 삼성전자주식회사 연마용 조성물 및 이를 이용한 반도체 장치의 제조 방법
KR101823083B1 (ko) * 2016-09-07 2018-01-30 주식회사 케이씨텍 표면개질된 콜로이달 세리아 연마입자, 그의 제조방법 및 그를 포함하는 연마 슬러리 조성물
KR102539028B1 (ko) 2017-06-15 2023-06-02 로디아 오퍼레이션스 세륨 기반 입자
CN109986458B (zh) * 2017-12-29 2021-02-05 长鑫存储技术有限公司 缓研磨去除多晶硅表面凸块缺陷的方法及半导体工艺方法
WO2021081162A1 (en) 2019-10-22 2021-04-29 Cmc Materials, Inc. Composition and method for silicon oxide and carbon doped silicon oxide cmp
WO2021081171A1 (en) * 2019-10-22 2021-04-29 Cmc Materials, Inc. Self-stopping polishing composition and method
TWI857165B (zh) 2019-10-22 2024-10-01 美商Ｃｍｃ材料有限責任公司 用於選擇性化學機械拋光氧化物之組合物及方法
US12359091B2 (en) 2019-11-26 2025-07-15 Rhodia Operations Liquid dispersion and powder of cerium based core-shell particles, process for producing the same and uses thereof in polishing
KR102373924B1 (ko) * 2020-10-26 2022-03-15 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법
CN112680115A (zh) * 2021-01-04 2021-04-20 上海晖研材料科技有限公司 一种氧化铈颗粒在抛光工艺中的应用
CN112723405A (zh) * 2021-01-04 2021-04-30 上海晖研材料科技有限公司 一种氧化铈颗粒及含其的抛光浆料
CN112758974A (zh) * 2021-01-04 2021-05-07 上海晖研材料科技有限公司 一种氧化铈颗粒的制备方法
EP4341358A1 (en) 2021-05-17 2024-03-27 Rhodia Operations Liquid dispersion and powder of cerium based core-shell particles, process for producing the same and uses thereof in polishing
KR102765948B1 (ko) * 2021-05-20 2025-02-11 주식회사 한국나노오트 연마용 세리아 입자 및 이를 포함하는 슬러리
JP2025520327A (ja) * 2022-06-17 2025-07-03 ローディア オペレーションズ 酸化セリウム粒子の懸濁液
CN115960540A (zh) * 2022-12-23 2023-04-14 昂士特科技(深圳)有限公司 具有改进颗粒的化学机械抛光组合物
WO2025132262A1 (en) 2023-12-21 2025-06-26 Rhodia Operations Aqueous dispersion comprising particles of cerium oxide with adsorbed polyoxometalates species thereon, process for producing the same and use thereof in polishing
WO2025190482A1 (en) 2024-03-13 2025-09-18 Rhodia Operations Cerium oxide particles with cotrolled microstructure
CN119736068B (zh) * 2025-02-05 2025-08-08 珠海基石科技有限公司 一种粒子及其分散液、平整化组合物及其应用、半导体器件及其用基底的平整化方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1077974A (zh) * 1992-04-27 1993-11-03 罗德尔公司 抛光和刨平表面用的组合物和方法
CN1329118A (zh) * 2000-06-21 2002-01-02 普莱克斯S.T.技术有限公司 抛光组合物和抛光方法
CN1384170A (zh) * 2001-04-27 2002-12-11 花王株式会社 研磨液组合物
CN1575325A (zh) * 2001-10-24 2005-02-02 卡伯特微电子公司 含硼抛光系统及方法
CN1626599A (zh) * 2003-11-04 2005-06-15 福吉米株式会社 抛光组合物和抛光方法
CN1849379A (zh) * 2003-07-11 2006-10-18 格雷斯公司 用于化学机械抛光的磨料颗粒

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
EP1369906B1 (en) 2001-02-20 2012-06-27 Hitachi Chemical Company, Ltd. Polishing compound and method for polishing substrate
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US7044836B2 (en) 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
US7470295B2 (en) 2004-03-12 2008-12-30 K.C. Tech Co., Ltd. Polishing slurry, method of producing same, and method of polishing substrate
JP2006100538A (ja) 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
US7531105B2 (en) 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20060096179A1 (en) 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
TW201000613A (en) 2008-04-23 2010-01-01 Hitachi Chemical Co Ltd Polishing agent and method for polishing substrate using the same
CN101608097B (zh) * 2009-07-14 2011-12-21 上海华明高纳稀土新材料有限公司 化学机械抛光用纳米氧化铈浆液及其制备方法
US8728341B2 (en) 2009-10-22 2014-05-20 Hitachi Chemical Company, Ltd. Polishing agent, concentrated one-pack type polishing agent, two-pack type polishing agent and method for polishing substrate
WO2013017139A1 (en) 2011-08-01 2013-02-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e. V. An rf coil assembly for mri with a plurality of coil elements distributed over at least two coil rows
JP6044630B2 (ja) 2012-02-21 2016-12-14 日立化成株式会社 研磨剤、研磨剤セット及び基体の研磨方法
TWI573864B (zh) 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
US8916061B2 (en) * 2012-03-14 2014-12-23 Cabot Microelectronics Corporation CMP compositions selective for oxide and nitride with high removal rate and low defectivity
US9633863B2 (en) * 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
JP6209845B2 (ja) 2013-04-11 2017-10-11 日立化成株式会社 研磨液、研磨液セット及び基体の研磨方法
JP6493207B2 (ja) * 2013-06-27 2019-04-03 コニカミノルタ株式会社 酸化セリウム研磨材の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1077974A (zh) * 1992-04-27 1993-11-03 罗德尔公司 抛光和刨平表面用的组合物和方法
CN1329118A (zh) * 2000-06-21 2002-01-02 普莱克斯S.T.技术有限公司 抛光组合物和抛光方法
CN1384170A (zh) * 2001-04-27 2002-12-11 花王株式会社 研磨液组合物
CN1575325A (zh) * 2001-10-24 2005-02-02 卡伯特微电子公司 含硼抛光系统及方法
CN1849379A (zh) * 2003-07-11 2006-10-18 格雷斯公司 用于化学机械抛光的磨料颗粒
CN1626599A (zh) * 2003-11-04 2005-06-15 福吉米株式会社 抛光组合物和抛光方法

Also Published As

Publication number Publication date
WO2016141260A1 (en) 2016-09-09
CN107429121A (zh) 2017-12-01
JP2018513552A (ja) 2018-05-24
EP3265526A4 (en) 2018-12-05
JP6760955B2 (ja) 2020-09-23
US20160257855A1 (en) 2016-09-08
TWI580768B (zh) 2017-05-01
KR102605260B1 (ko) 2023-11-24
US10414947B2 (en) 2019-09-17
KR20170125379A (ko) 2017-11-14
EP3265526A1 (en) 2018-01-10
EP3265526B1 (en) 2021-04-14
TW201704440A (zh) 2017-02-01

Similar Documents

Publication Publication Date Title
CN107429121B (zh) 含有铈土颗粒的抛光组合物及使用方法
CN107427988B (zh) 包含铈土研磨剂的抛光组合物
CN107429120B (zh) 包含阳离子型聚合物添加剂的抛光组合物
CN110520493B (zh) 自停止性抛光组合物及用于块状氧化物平坦化的方法
US10639766B2 (en) Methods and compositions for processing dielectric substrate
CN105814163B (zh) 混合研磨剂型抛光组合物
JP6920306B2 (ja) アルキルアミン及びシクロデキストリンを含むｃｍｐ処理組成物
JP2015120844A (ja) 研磨剤の製造方法、研磨方法および半導体集積回路装置の製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: Illinois, USA

Patentee after: CMC Materials Co.,Ltd.

Address before: Illinois, USA

Patentee before: Cabot Microelectronics Corp.

CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Illinois, America

Patentee after: CMC Materials Co.,Ltd.

Address before: Illinois, America

Patentee before: CMC Materials Co.,Ltd.

CP01 Change in the name or title of a patent holder