JP6758818B2 - エネルギー吸収体ガスへの衝突共鳴エネルギー伝達によるプラズマのｖｕｖ放出の調節 - Google Patents

エネルギー吸収体ガスへの衝突共鳴エネルギー伝達によるプラズマのｖｕｖ放出の調節 Download PDF

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JP6758818B2
JP6758818B2 JP2015220973A JP2015220973A JP6758818B2 JP 6758818 B2 JP6758818 B2 JP 6758818B2 JP 2015220973 A JP2015220973 A JP 2015220973A JP 2015220973 A JP2015220973 A JP 2015220973A JP 6758818 B2 JP6758818 B2 JP 6758818B2
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plasma
neon
helium
processing chamber
etching
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JP2016103632A5 (https=
JP2016103632A (ja
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アンドレアス・フィッシャー
トルステン・リル
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
JP2015220973A 2014-11-12 2015-11-11 エネルギー吸収体ガスへの衝突共鳴エネルギー伝達によるプラズマのｖｕｖ放出の調節 Active JP6758818B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/539,121 2014-11-12
US14/539,121 US9609730B2 (en) 2014-11-12 2014-11-12 Adjustment of VUV emission of a plasma via collisional resonant energy transfer to an energy absorber gas

Publications (3)

Publication Number Publication Date
JP2016103632A JP2016103632A (ja) 2016-06-02
JP2016103632A5 JP2016103632A5 (https=) 2018-12-20
JP6758818B2 true JP6758818B2 (ja) 2020-09-23

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JP2015220973A Active JP6758818B2 (ja) 2014-11-12 2015-11-11 エネルギー吸収体ガスへの衝突共鳴エネルギー伝達によるプラズマのｖｕｖ放出の調節

Country Status (5)

Country Link
US (2) US9609730B2 (https=)
JP (1) JP6758818B2 (https=)
KR (1) KR20160056839A (https=)
CN (1) CN105590826B (https=)
TW (1) TWI690241B (https=)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US8617411B2 (en) * 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
TWI639179B (zh) 2014-01-31 2018-10-21 美商蘭姆研究公司 真空整合硬遮罩製程及設備
CN112366128B (zh) * 2014-04-09 2024-03-08 应用材料公司 用于在处理腔室中提供对称的流动路径的流动模块
US9870899B2 (en) * 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US10020264B2 (en) * 2015-04-28 2018-07-10 Infineon Technologies Ag Integrated circuit substrate and method for manufacturing the same
US9972504B2 (en) 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
WO2017052905A1 (en) * 2015-09-22 2017-03-30 Applied Materials, Inc. Apparatus and method for selective deposition
US10727073B2 (en) 2016-02-04 2020-07-28 Lam Research Corporation Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
KR20170122910A (ko) * 2016-04-27 2017-11-07 성균관대학교산학협력단 원자층 식각방법
US10269566B2 (en) 2016-04-29 2019-04-23 Lam Research Corporation Etching substrates using ale and selective deposition
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10559461B2 (en) 2017-04-19 2020-02-11 Lam Research Corporation Selective deposition with atomic layer etch reset
US10832909B2 (en) 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
US10494715B2 (en) 2017-04-28 2019-12-03 Lam Research Corporation Atomic layer clean for removal of photoresist patterning scum
US10796912B2 (en) * 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
US9991129B1 (en) * 2017-05-23 2018-06-05 Applied Materials, Inc. Selective etching of amorphous silicon over epitaxial silicon
SG11202004968SA (en) 2017-12-15 2020-07-29 Tokyo Electron Ltd Plasma etching method and plasma etching apparatus
WO2019190781A1 (en) 2018-03-30 2019-10-03 Lam Research Corporation Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
US11062887B2 (en) * 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11276579B2 (en) 2018-11-14 2022-03-15 Hitachi High-Tech Corporation Substrate processing method and plasma processing apparatus
KR102678588B1 (ko) 2018-11-14 2024-06-27 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
WO2020101997A1 (en) * 2018-11-15 2020-05-22 Lam Research Corporation Atomic layer etch systems for selectively etching with halogen-based compounds
US12211691B2 (en) 2018-12-20 2025-01-28 Lam Research Corporation Dry development of resists
TW202514246A (zh) 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
KR102809999B1 (ko) * 2019-04-01 2025-05-19 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI910974B (zh) 2019-06-26 2026-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
DE102019214074A1 (de) * 2019-09-16 2021-03-18 Robert Bosch Gmbh Verfahren und Vorrichtung zum lokalen Entfernen und/oder Modifizieren eines Polymermaterials auf einer Oberfläche
CN114200776A (zh) 2020-01-15 2022-03-18 朗姆研究公司 用于光刻胶粘附和剂量减少的底层
CN111370308B (zh) * 2020-02-18 2023-03-21 中国科学院微电子研究所 一种刻蚀方法及系统、刻蚀控制装置、电子器件及设备
CN115244664A (zh) 2020-02-28 2022-10-25 朗姆研究公司 用于减少euv图案化缺陷的多层硬掩模
WO2021178399A1 (en) 2020-03-06 2021-09-10 Lam Research Corporation Atomic layer etching of molybdenum
WO2021202681A1 (en) 2020-04-03 2021-10-07 Lam Research Corporation Pre-exposure photoresist curing to enhance euv lithographic performance
US11538714B2 (en) 2020-05-21 2022-12-27 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
US11315819B2 (en) * 2020-05-21 2022-04-26 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
US11875967B2 (en) 2020-05-21 2024-01-16 Applied Materials, Inc. System apparatus and method for enhancing electrical clamping of substrates using photo-illumination
WO2022010809A1 (en) 2020-07-07 2022-01-13 Lam Research Corporation Integrated dry processes for patterning radiation photoresist patterning
CN111994868B (zh) * 2020-08-12 2022-05-17 天津大学 极紫外光与等离子体复合原子尺度加工方法
WO2022103764A1 (en) 2020-11-13 2022-05-19 Lam Research Corporation Process tool for dry removal of photoresist
CN112509901B (zh) * 2020-11-19 2022-03-22 北京北方华创微电子装备有限公司 工艺腔室及半导体工艺设备
US12577466B2 (en) 2020-12-08 2026-03-17 Lam Research Corporation Photoresist development with organic vapor
CN114843164A (zh) * 2021-02-02 2022-08-02 中微半导体设备(上海)股份有限公司 升降销固定器、升降销组件及等离子体处理装置
US12532546B2 (en) * 2021-03-11 2026-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for reduction of photoresist defect
US11502217B1 (en) * 2021-05-24 2022-11-15 Gautam Ganguly Methods and apparatus for reducing as-deposited and metastable defects in Amorphousilicon
KR102730643B1 (ko) * 2021-12-17 2024-11-14 세메스 주식회사 공정 가스 공급 유닛 및 이를 포함하는 기판 처리 장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629255A (ja) * 1992-07-10 1994-02-04 Hitachi Sci Syst:Kk プラズマエッチング方法及び装置
US5948704A (en) 1996-06-05 1999-09-07 Lam Research Corporation High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
US6461529B1 (en) * 1999-04-26 2002-10-08 International Business Machines Corporation Anisotropic nitride etch process with high selectivity to oxide and photoresist layers in a damascene etch scheme
US7160671B2 (en) * 2001-06-27 2007-01-09 Lam Research Corporation Method for argon plasma induced ultraviolet light curing step for increasing silicon-containing photoresist selectivity
US7517814B2 (en) * 2005-03-30 2009-04-14 Tokyo Electron, Ltd. Method and system for forming an oxynitride layer by performing oxidation and nitridation concurrently
US7740736B2 (en) 2006-06-08 2010-06-22 Lam Research Corporation Methods and apparatus for preventing plasma un-confinement events in a plasma processing chamber
US7732728B2 (en) 2007-01-17 2010-06-08 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
CN102084468B (zh) * 2008-02-08 2014-10-29 朗姆研究公司 包括横向波纹管和非接触颗粒密封的可调节间隙电容耦合rf等离子反应器
WO2011062162A1 (ja) * 2009-11-17 2011-05-26 株式会社日立ハイテクノロジーズ 試料処理装置、試料処理システム及び試料の処理方法
US20110139748A1 (en) * 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US8883024B2 (en) * 2010-10-18 2014-11-11 Tokyo Electron Limited Using vacuum ultra-violet (VUV) data in radio frequency (RF) sources
JP2012149278A (ja) * 2011-01-17 2012-08-09 Mitsui Chemicals Inc シリコン含有膜の製造方法
US8617411B2 (en) * 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US9362133B2 (en) 2012-12-14 2016-06-07 Lam Research Corporation Method for forming a mask by etching conformal film on patterned ashable hardmask

Also Published As

Publication number Publication date
TW201633852A (zh) 2016-09-16
CN105590826B (zh) 2018-08-03
US9609730B2 (en) 2017-03-28
US20160135274A1 (en) 2016-05-12
TWI690241B (zh) 2020-04-01
KR20160056839A (ko) 2016-05-20
JP2016103632A (ja) 2016-06-02
CN105590826A (zh) 2016-05-18
US20170170036A1 (en) 2017-06-15

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