JP6757162B2 - プラズマ処理方法、およびプラズマ処理装置 - Google Patents

プラズマ処理方法、およびプラズマ処理装置 Download PDF

Info

Publication number
JP6757162B2
JP6757162B2 JP2016071278A JP2016071278A JP6757162B2 JP 6757162 B2 JP6757162 B2 JP 6757162B2 JP 2016071278 A JP2016071278 A JP 2016071278A JP 2016071278 A JP2016071278 A JP 2016071278A JP 6757162 B2 JP6757162 B2 JP 6757162B2
Authority
JP
Japan
Prior art keywords
plasma
surface region
ultraviolet rays
generated
radicals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016071278A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017183607A5 (enrdf_load_stackoverflow
JP2017183607A (ja
Inventor
大輔 渡邉
大輔 渡邉
将文 鈴木
将文 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority to JP2016071278A priority Critical patent/JP6757162B2/ja
Publication of JP2017183607A publication Critical patent/JP2017183607A/ja
Publication of JP2017183607A5 publication Critical patent/JP2017183607A5/ja
Application granted granted Critical
Publication of JP6757162B2 publication Critical patent/JP6757162B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2016071278A 2016-03-31 2016-03-31 プラズマ処理方法、およびプラズマ処理装置 Active JP6757162B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016071278A JP6757162B2 (ja) 2016-03-31 2016-03-31 プラズマ処理方法、およびプラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016071278A JP6757162B2 (ja) 2016-03-31 2016-03-31 プラズマ処理方法、およびプラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020144026A Division JP7030915B2 (ja) 2020-08-28 2020-08-28 プラズマ処理方法、およびプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2017183607A JP2017183607A (ja) 2017-10-05
JP2017183607A5 JP2017183607A5 (enrdf_load_stackoverflow) 2019-05-09
JP6757162B2 true JP6757162B2 (ja) 2020-09-16

Family

ID=60007670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016071278A Active JP6757162B2 (ja) 2016-03-31 2016-03-31 プラズマ処理方法、およびプラズマ処理装置

Country Status (1)

Country Link
JP (1) JP6757162B2 (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7095029B2 (ja) * 2019-09-09 2022-07-04 芝浦メカトロニクス株式会社 プラズマ処理装置
JP7030915B2 (ja) * 2020-08-28 2022-03-07 芝浦メカトロニクス株式会社 プラズマ処理方法、およびプラズマ処理装置
JP7605569B2 (ja) 2021-07-21 2024-12-24 東京エレクトロン株式会社 プラズマ源及びプラズマ処理装置
CN115346852A (zh) * 2022-08-12 2022-11-15 中核四0四有限公司 一种远程等离子体源发生装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0410415A (ja) * 1989-08-11 1992-01-14 Sanyo Electric Co Ltd ドライエッチング方法
JPH06318581A (ja) * 1993-05-07 1994-11-15 Sanyo Electric Co Ltd ドライエッチング方法
JP2787006B2 (ja) * 1995-05-10 1998-08-13 株式会社日立製作所 加工方法及び加工装置並びにプラズマ光源
JP3582916B2 (ja) * 1995-10-14 2004-10-27 スピードファム株式会社 プラズマエッチング装置
US20020124867A1 (en) * 2001-01-08 2002-09-12 Apl Co., Ltd. Apparatus and method for surface cleaning using plasma

Also Published As

Publication number Publication date
JP2017183607A (ja) 2017-10-05

Similar Documents

Publication Publication Date Title
JP6008608B2 (ja) レジストマスクの処理方法
KR102364322B1 (ko) 에칭 방법
TWI453793B (zh) A pattern forming method and a method of manufacturing the semiconductor device
US7989364B2 (en) Plasma oxidation processing method
JP6757162B2 (ja) プラズマ処理方法、およびプラズマ処理装置
TWI487027B (zh) Plasma oxidation treatment method
JP5486883B2 (ja) 被処理体の処理方法
KR102772114B1 (ko) 텅스텐 또는 다른 금속층의 원자층 에칭
JPWO2011062162A1 (ja) 試料処理装置、試料処理システム及び試料の処理方法
WO2013151811A1 (en) Method and apparatus for forming features with plasma pre-etch treatment on photoresist
KR102280572B1 (ko) 플라즈마 처리 방법
WO2014024733A1 (ja) 多層膜をエッチングする方法、及びプラズマ処理装置
KR20150016498A (ko) 플라즈마 에칭 방법
JP3893888B2 (ja) プラズマ処理装置
JP7030915B2 (ja) プラズマ処理方法、およびプラズマ処理装置
KR101255905B1 (ko) 실리콘 산화막의 형성 방법 및 장치
JP2005064037A (ja) プラズマ処理装置及びアッシング方法
CN107492512B (zh) 利用光子辅助等离子体工艺改善线边缘粗糙度
JP7418230B2 (ja) プラズマ処理方法及びプラズマ処理装置
JP2017183610A (ja) プラズマ処理方法、およびプラズマ処理装置
JP6501519B2 (ja) 多層レジストの除去方法、およびプラズマ処理装置
KR100402142B1 (ko) 독립적으로제어된3전극을가진에칭챔버
JP7543059B2 (ja) プラズマ処理装置、およびプラズマ処理方法
JP7085608B2 (ja) 半導体装置の製造方法
JP2017183611A (ja) プラズマ処理方法、およびプラズマ処理装置

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190329

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190329

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200120

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200127

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20200313

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200731

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200828

R150 Certificate of patent or registration of utility model

Ref document number: 6757162

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150