JP6756411B2 - 弾性波装置、高周波フロントエンド回路及び通信装置 - Google Patents
弾性波装置、高周波フロントエンド回路及び通信装置 Download PDFInfo
- Publication number
- JP6756411B2 JP6756411B2 JP2019560975A JP2019560975A JP6756411B2 JP 6756411 B2 JP6756411 B2 JP 6756411B2 JP 2019560975 A JP2019560975 A JP 2019560975A JP 2019560975 A JP2019560975 A JP 2019560975A JP 6756411 B2 JP6756411 B2 JP 6756411B2
- Authority
- JP
- Japan
- Prior art keywords
- elastic wave
- silicon
- wave device
- support substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004891 communication Methods 0.000 title claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 95
- 239000010703 silicon Substances 0.000 claims description 95
- 229910052710 silicon Inorganic materials 0.000 claims description 95
- 239000000758 substrate Substances 0.000 claims description 62
- 239000000463 material Substances 0.000 claims description 20
- 238000012545 processing Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000001902 propagating effect Effects 0.000 claims description 10
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims 1
- 239000009719 polyimide resin Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 73
- 230000005540 biological transmission Effects 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 239000000057 synthetic resin Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011796 hollow space material Substances 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- -1 sterite Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02866—Means for compensation or elimination of undesirable effects of bulk wave excitation and reflections
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02921—Measures for preventing electric discharge due to pyroelectricity
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
- H03H9/14541—Multilayer finger or busbar electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
- H03F2203/7209—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched from a first band to a second band
Description
2…シリコン支持基板
2a…第1の主面
2b…第2の主面
3…支持層
4…シリコンカバー層
5…低音速膜
6…圧電体
7…IDT電極
8,9…接続電極
10…誘電体膜
11,12…貫通ビア電極
13,14…端子電極
21…弾性波装置
22…金属膜
31…弾性波装置
32…高音速膜
40…弾性波装置
41…高音響インピーダンス層
42…低音響インピーダンス層
201A,201B…デュプレクサ
202…アンテナ素子
203…RF信号処理回路
211,212…フィルタ
214…ローノイズアンプ回路
221,222…フィルタ
224…ローノイズアンプ回路
225…スイッチ
230…高周波フロントエンド回路
231,232…フィルタ
234a,234b…パワーアンプ回路
240…通信装置
244a,244b…パワーアンプ回路
Claims (17)
- シリコン支持基板と、
前記シリコン支持基板上に直接または間接に積層された圧電体と、
前記圧電体上に設けられた機能電極と、
前記シリコン支持基板上に直接または間接に積層されており、かつ平面視した場合に、前記機能電極の外側に設けられており、絶縁物からなる支持層と、
前記支持層上に積層されたシリコンカバー層と、
を備え、
前記シリコン支持基板と、前記支持層と、前記シリコンカバー層とにより囲まれた空間が形成されており、
前記シリコン支持基板の電気抵抗が、前記シリコンカバー層の電気抵抗よりも高い、弾性波装置。 - 前記支持層が感光性ポリイミド系樹脂からなる、請求項1に記載の弾性波装置。
- 前記シリコンカバー層が、p型半導体からなり、
前記シリコン支持基板がn型半導体からなる、請求項2に記載の弾性波装置。 - 前記シリコンカバー層の前記支持層が接合されている接合面に金属膜が設けられている、請求項1〜3のいずれか1項に記載の弾性波装置。
- 前記金属膜が、前記シリコンカバー層の前記支持層が接合されている側の面全体に設けられている、請求項4に記載の弾性波装置。
- 前記支持層が、前記機能電極を囲む枠状の形状を有し、
前記圧電体が、前記支持層で囲まれた部分に配置されている、請求項1〜5のいずれか1項に記載の弾性波装置。 - 前記機能電極が、IDT電極である、請求項1〜6のいずれか1項に記載の弾性波装置。
- 前記IDT電極の電極指ピッチで定まる波長をλとしたときに、前記圧電体の厚みが3.5λ以下である、請求項7に記載の弾性波装置。
- 前記シリコン支持基板上に前記圧電体が直接積層されている、請求項1〜8のいずれか1項に記載の弾性波装置。
- 前記シリコン支持基板と、前記圧電体との間に積層されており、前記圧電体を伝搬するバルク波の音速よりも、伝搬するバルク波の音速が低速である低音速材料からなる低音速膜をさらに備える、請求項1〜8のいずれか1項に記載の弾性波装置。
- 前記シリコン支持基板と、前記低音速膜との間に積層されており、前記圧電体を伝搬する弾性波の音速よりも、伝搬するバルク波の音速が高速である高音速材料からなる高音速膜をさらに備える、請求項10に記載の弾性波装置。
- 前記シリコン支持基板と、前記圧電体との間に積層されており、音響インピーダンスが相対的に低い低音響インピーダンス層と、音響インピーダンスが相対的に高い高音響インピーダンス層とを有する音響反射膜をさらに備える、請求項1〜8のいずれか1項に記載の弾性波装置。
- 前記機能電極を覆うように設けられた誘電体膜をさらに備える、請求項1〜12のいずれか1項に記載の弾性波装置。
- 前記シリコン支持基板を貫通している複数の貫通ビア電極をさらに備え、
前記貫通ビア電極の一端が、前記機能電極に電気的に接続されており、他端が前記シリコン支持基板の前記圧電体が積層されている側とは反対側の面に至っており、
前記貫通ビア電極が、平面視において、前記支持層で囲まれた領域内に位置している、請求項1〜13のいずれか1項に記載の弾性波装置。 - 前記支持層が前記シリコン支持基板上に直接形成されている、請求項1〜14に記載の弾性波装置。
- 請求項1〜15のいずれか1項に記載の弾性波装置と、
パワーアンプと、
を備える、高周波フロントエンド回路。 - 請求項16に記載の高周波フロントエンド回路と、
RF信号処理回路と、
を備える、通信装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017245674 | 2017-12-22 | ||
JP2017245674 | 2017-12-22 | ||
PCT/JP2018/045214 WO2019124127A1 (ja) | 2017-12-22 | 2018-12-10 | 弾性波装置、高周波フロントエンド回路及び通信装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2019124127A1 JPWO2019124127A1 (ja) | 2020-08-27 |
JP6756411B2 true JP6756411B2 (ja) | 2020-09-16 |
Family
ID=66993283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019560975A Active JP6756411B2 (ja) | 2017-12-22 | 2018-12-10 | 弾性波装置、高周波フロントエンド回路及び通信装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11245380B2 (ja) |
JP (1) | JP6756411B2 (ja) |
KR (1) | KR102444727B1 (ja) |
CN (1) | CN111492578B (ja) |
WO (1) | WO2019124127A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116783704A (zh) * | 2021-01-04 | 2023-09-19 | 株式会社村田制作所 | 电子器件 |
WO2022145204A1 (ja) * | 2021-01-04 | 2022-07-07 | 株式会社村田製作所 | 電子デバイス |
CN117136498A (zh) * | 2021-03-31 | 2023-11-28 | 株式会社村田制作所 | 弹性波装置以及弹性波装置的制造方法 |
CN117353691B (zh) * | 2023-11-29 | 2024-04-12 | 荣耀终端有限公司 | 一种体声波滤波器的制造方法、体声波滤波器及通信设备 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1019923A (ja) * | 1996-07-05 | 1998-01-23 | Murata Mfg Co Ltd | 電子部品およびその製造方法 |
GB0016861D0 (en) | 2000-07-11 | 2000-08-30 | Univ Cranfield | Improvements in or relating to filters |
JP4223428B2 (ja) * | 2004-03-31 | 2009-02-12 | 富士通メディアデバイス株式会社 | フィルタおよびその製造方法 |
JP2005295363A (ja) | 2004-04-02 | 2005-10-20 | Matsushita Electric Ind Co Ltd | 弾性表面波体 |
JP2008060382A (ja) * | 2006-08-31 | 2008-03-13 | Matsushita Electric Ind Co Ltd | 電子部品及びその製造方法 |
JP5377351B2 (ja) * | 2010-02-05 | 2013-12-25 | エスアイアイ・クリスタルテクノロジー株式会社 | 圧電振動子及びこれを用いた発振器 |
KR101771717B1 (ko) * | 2011-03-31 | 2017-08-25 | 삼성전기주식회사 | 수정 진동자 및 수정 진동자의 전극 구조 |
JP5827088B2 (ja) * | 2011-09-27 | 2015-12-02 | セイコーインスツル株式会社 | 電子部品の端子接続構造、パッケージ、圧電振動子、発振器、電子機器および電波時計 |
JP6017868B2 (ja) | 2011-11-04 | 2016-11-02 | 太陽誘電株式会社 | 分波器、フィルタ及び通信モジュール |
DE112014006080B4 (de) * | 2013-12-27 | 2022-05-12 | Murata Manufacturing Co., Ltd. | Vorrichtung für elastische Wellen |
JP2015156626A (ja) * | 2014-01-16 | 2015-08-27 | 京セラ株式会社 | 弾性波素子、分波器および通信装置 |
JP6425163B2 (ja) | 2014-05-16 | 2018-11-21 | ローム株式会社 | Memsセンサおよびその製造方法、ならびにそれを備えたmemsパッケージ |
CN107615660B (zh) * | 2015-06-24 | 2020-12-22 | 株式会社村田制作所 | 弹性波滤波器装置 |
WO2017212677A1 (ja) | 2016-06-08 | 2017-12-14 | 株式会社村田製作所 | 共振装置製造方法 |
US11677378B2 (en) * | 2017-11-29 | 2023-06-13 | Murata Manufacturing Co., Ltd. | Elastic wave device |
US20190181828A1 (en) * | 2017-12-12 | 2019-06-13 | Murata Manufacturing Co., Ltd. | Electronic component module |
-
2018
- 2018-12-10 KR KR1020207017645A patent/KR102444727B1/ko active IP Right Grant
- 2018-12-10 WO PCT/JP2018/045214 patent/WO2019124127A1/ja active Application Filing
- 2018-12-10 CN CN201880081634.0A patent/CN111492578B/zh active Active
- 2018-12-10 JP JP2019560975A patent/JP6756411B2/ja active Active
-
2020
- 2020-06-19 US US16/906,090 patent/US11245380B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20200089715A (ko) | 2020-07-27 |
US11245380B2 (en) | 2022-02-08 |
CN111492578A (zh) | 2020-08-04 |
US20200321938A1 (en) | 2020-10-08 |
CN111492578B (zh) | 2023-09-29 |
JPWO2019124127A1 (ja) | 2020-08-27 |
KR102444727B1 (ko) | 2022-09-16 |
WO2019124127A1 (ja) | 2019-06-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6756411B2 (ja) | 弾性波装置、高周波フロントエンド回路及び通信装置 | |
JP6454299B2 (ja) | 弾性波デバイス | |
JP6556663B2 (ja) | 弾性波デバイス | |
JP2017157922A (ja) | 電子デバイス | |
JP6651643B2 (ja) | 弾性波フィルタ、分波器および通信装置 | |
US10886891B2 (en) | Acoustic wave device, module, and multiplexer | |
JP7117828B2 (ja) | 弾性波デバイス | |
US11539343B2 (en) | Acoustic wave device, high-frequency front-end circuit, and communication device | |
WO2021002454A1 (ja) | 高周波モジュール及び通信装置 | |
US11588468B2 (en) | Acoustic wave device, radio-frequency front-end circuit, and communication apparatus | |
CN108063603B (zh) | 弹性波装置、高频前端电路以及通信装置 | |
KR102253460B1 (ko) | 탄성파 장치, 고주파 프론트엔드 회로 및 통신 장치 | |
US20220123728A1 (en) | Radio frequency module, communication device, and acoustic wave device | |
CN114614852B (zh) | 高频模块以及通信装置 | |
US11626851B2 (en) | Acoustic wave device, high-frequency front end circuit, communication device, and method for manufacturing acoustic wave device | |
CN109845104B (zh) | 弹性波装置、高频前端电路以及通信装置 | |
JP2022113172A (ja) | 弾性波デバイス | |
JP2008211277A (ja) | 弾性表面波素子 | |
WO2022230682A1 (ja) | 高周波モジュール及び通信装置 | |
JP7465515B1 (ja) | 弾性波デバイス | |
WO2022185692A1 (ja) | 高周波モジュール及び通信装置 | |
WO2022145412A1 (ja) | 高周波モジュール及び通信装置 | |
JP2021100213A (ja) | 高周波モジュール及び通信装置 | |
JP2003152130A (ja) | 集積回路装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200527 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20200527 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20200618 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200728 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200810 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6756411 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |