JP6753705B2 - 基板の製造方法 - Google Patents
基板の製造方法 Download PDFInfo
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- JP6753705B2 JP6753705B2 JP2016116071A JP2016116071A JP6753705B2 JP 6753705 B2 JP6753705 B2 JP 6753705B2 JP 2016116071 A JP2016116071 A JP 2016116071A JP 2016116071 A JP2016116071 A JP 2016116071A JP 6753705 B2 JP6753705 B2 JP 6753705B2
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- 239000000758 substrate Substances 0.000 title claims description 290
- 238000004519 manufacturing process Methods 0.000 title claims description 46
- 238000000034 method Methods 0.000 claims description 52
- 238000001039 wet etching Methods 0.000 claims description 52
- 239000000126 substance Substances 0.000 claims description 39
- 230000002093 peripheral effect Effects 0.000 claims description 22
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 239000002253 acid Substances 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000010408 film Substances 0.000 description 187
- 239000000243 solution Substances 0.000 description 38
- 238000006243 chemical reaction Methods 0.000 description 19
- 239000000543 intermediate Substances 0.000 description 15
- 238000005530 etching Methods 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000010000 carbonizing Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
上記製造方法において好ましくは、Si基板の少なくとも一部を除去する工程において、Si基板およびSiC膜を回転させた状態で、ウエットエッチングに用いる薬液をSi基板の他方の主面に注入する。
2 中間体
11 Si基板
11a Si基板の表面
11b Si基板の裏面
11c Si基板の側面
12,121,122 SiC膜
12a,121a SiC膜の表面
12b,121b SiC膜の裏面
12c SiC膜の側面
13 凹部
14 マスク層
15 フォトレジスト
31 保持部
31a 保持部の外周部
31b 保持部の突出部
CS 反応容器
HP 固定台
MA 薬液
PL SiC膜の表面に対して平行な平面
RG1 Si基板の裏面の中央部
RG2 Si基板の凹部の底面
RG3 Si基板の裏面の外周部
RG4 Si基板の裏面の露出した中央部
SP 保持部における外周部と複数の突出部との間の空間
Claims (11)
- Si基板の一方の主面に10nm以上160nm以下の厚さのSiC膜を形成する工程と、
前記SiC膜と接触する前記Si基板の少なくとも一部を除去することにより、前記SiC膜を露出する工程と、
前記Si基板の少なくとも一部を除去する工程の後で、前記SiC膜の一方の主面に別のSiC膜を形成する工程とを備えた、基板の製造方法。 - 前記Si基板の少なくとも一部を除去する工程において、前記Si基板の他方の主面の少なくとも一部をウエットエッチングにより除去し、
前記ウエットエッチングに用いる薬液に対して前記Si基板および前記SiC膜を相対的に動かす、請求項1に記載の基板の製造方法。 - 前記SiC膜を形成する工程において、前記Si基板の前記一方の主面、側面、および前記Si基板の前記他方の主面の外周部に前記SiC膜を形成し、
前記Si基板の少なくとも一部を除去する工程において、前記Si基板の前記他方の主面の前記外周部に形成された前記SiC膜をマスクとして、前記Si基板の前記他方の主面を除去する、請求項2に記載の基板の製造方法。 - Si基板の一方の主面にSiC膜を形成する工程と、
前記SiC膜と接触する前記Si基板の少なくとも一部を除去する工程と、
前記Si基板の少なくとも一部を除去する工程の後で、前記SiC膜の一方の主面に別のSiC膜を形成する工程とを備え、
前記Si基板の少なくとも一部を除去する工程において、前記Si基板の他方の主面の少なくとも一部をウエットエッチングにより除去し、
前記ウエットエッチングに用いる薬液に対して前記Si基板および前記SiC膜を相対的に動かし、
前記Si基板の前記他方の主面の中央部にSiを底面とする凹部を形成する工程をさらに備え、
前記Si基板の少なくとも一部を除去する工程において、前記凹部の底面に前記SiC膜を露出させる、基板の製造方法。 - 前記Si基板の前記他方の主面の中央部に前記凹部を形成する工程の後で、前記Si基板の前記一方の主面に前記SiC膜を形成する工程を行う、請求項4に記載の基板の製造方法。
- 前記Si基板の前記一方の主面に前記SiC膜を形成する工程の後で、前記Si基板の前記他方の主面の中央部に前記凹部を形成する工程を行う、請求項4に記載の基板の製造方法。
- 前記Si基板の前記他方の主面の中央部に前記凹部を形成する工程において、前記Si基板の前記他方の主面に形成された酸化膜または窒化膜よりなるマスク層をマスクとして、前記Si基板の前記他方の主面の中央部をウエットエッチングにより除去する、請求項4〜6のいずれかに記載の基板の製造方法。
- 前記Si基板の少なくとも一部を除去する工程において、前記Si基板および前記SiC膜を、前記SiC膜の一方の主面に対して平行な平面内の方向に動かす、請求項2〜7のいずれかに記載の基板の製造方法。
- 前記Si基板の少なくとも一部を除去する工程において、前記Si基板および前記SiC膜を回転させた状態で、前記ウエットエッチングに用いる薬液を前記Si基板の前記他方の主面に注入する、請求項8に記載の基板の製造方法。
- 前記Si基板の少なくとも一部を除去する工程において、前記ウエットエッチングに用いる薬液としてフッ酸および硝酸を含む混酸を用いる、請求項2〜9のいずれかに記載の基板の製造方法。
- 前記別のSiC膜を形成する工程の後で、前記Si基板を完全に除去する工程をさらに備えた、請求項1〜10のいずれかに記載の基板の製造方法。
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