JP6736472B2 - 多層配線基板および表示装置、並びに電子機器 - Google Patents
多層配線基板および表示装置、並びに電子機器 Download PDFInfo
- Publication number
- JP6736472B2 JP6736472B2 JP2016562363A JP2016562363A JP6736472B2 JP 6736472 B2 JP6736472 B2 JP 6736472B2 JP 2016562363 A JP2016562363 A JP 2016562363A JP 2016562363 A JP2016562363 A JP 2016562363A JP 6736472 B2 JP6736472 B2 JP 6736472B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- insulating layer
- wiring board
- multilayer wiring
- multilayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 9
- 238000004381 surface treatment Methods 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 238000007788 roughening Methods 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 80
- 238000007689 inspection Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 12
- 230000007547 defect Effects 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 239000011295 pitch Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 8
- 238000012937 correction Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000011179 visual inspection Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 235000019646 color tone Nutrition 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 101100257134 Caenorhabditis elegans sma-4 gene Proteins 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000805 composite resin Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000002259 gallium compounds Chemical class 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- JMOHEPRYPIIZQU-UHFFFAOYSA-N oxygen(2-);tantalum(2+) Chemical compound [O-2].[Ta+2] JMOHEPRYPIIZQU-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/145—Organic substrates, e.g. plastic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
- H05K3/4676—Single layer compositions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N2021/95638—Inspecting patterns on the surface of objects for PCB's
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0274—Optical details, e.g. printed circuits comprising integral optical means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0104—Properties and characteristics in general
- H05K2201/0108—Transparent
Description
1.実施の形態(多層配線のうち、下層配線を表面処理した例)
1−1.基本構成
1−2.表示装置の構成
1−3.作用・効果
2.適用例(電子デバイスを備えた電子機器の例)
(1−1.基本構成)
図1は、本開示の一実施の形態に係る多層配線基板(多層配線基板1)の断面構成を斜視したものである。この多層配線基板1は、例えば、図4に示したようなタイリングディスプレイ等の表示装置を構成する表示パネルの基板として用いられるものである。多層配線基板1は、基材11の表面および裏面に複数の配線(配線12A,12B,15A,15B)等が配設された基板10上に、さらに光透過性を有する絶縁層21を介して配線22および、電子デバイスとして、例えば、発光素子31等が形成された構成を有する。本実施の形態では、基板10の表面に設けられた配線12B(第1配線)は表面処理が施され、絶縁層21上に設けられた配線22(第2配線)とは、例えば、可視光領域における反射率が互いに異なるようになっている。
diode;LED)が挙げられる。発光素子31の材料は特に限定されないが、例えば、青色に発光する窒化ガリウム(GaN)、緑色に発光するリン化ガリウム(GaP)、赤色に発光するヒ化リン化ガリウム(GaAsP),ヒ化アルミニウムガリウム(AlGaAs)等のガリウム系の化合物半導体が挙げられる。
図4は、本開示の多層配線基板1を用いた表示装置2の全体構成を表したものである。この表示装置2は、いわゆるタイリングディスプレイであり、複数の表示パネル(ここでは計4枚の表示パネル1A,1B,1C,1D)を備える。これらの表示パネル1A〜1Dは、上記多層配線基板1を用いたものであり、多層配線基板1上に、例えば、接着層を介して対向基板が貼り合わされた構成を有する(いずれも図示せず)。表示パネル1A〜1Dは、例えば2×2の領域に2次元配置され、これらの表示パネル1A〜1Dの各表示領域を組み合わせて映像を表示することが可能なものである。なお、図4中の「A」「B」とその向きは、用いられるバックプレーンの種類と配置状態を模式的に表したものである。表示パネル1A〜1Dにおいて用いられるバックプレーンの種類とレイアウトについては後述する。
前述したように、電子デバイスでは、その性能を向上させるための配線の本数が増加され、回路が複雑になっている。例えば、図1に示した多層配線基板1の配線22のように、絶縁層を間に複数の配線が積層されると共に、1つの層にも複数の配線が設けられて高密度化された場合、成膜工程の不良により、配線間において短絡が生じやすくなる。この短絡は、配線間を電気的に短絡させ、回路異常を引き起こす原因となる。このため、短絡欠陥を検出する外観検査によって短絡部の有無を検査し、これによって検出される短絡部を切断・修復、あるいは除去することが必要となる。
上記実施の形態において説明した多層配線基板1(およびこれを備えた表示装置2)は、例えば、テレビジョン装置,デジタルカメラ,ノート型パーソナルコンピュータ、携帯電話等の携帯端末装置あるいはビデオカメラなど、外部から入力された映像信号あるいは内部で生成した映像信号を、画像あるいは映像として表示するあらゆる分野の電子機器の表示装置に適用することが可能である。以下にその一例を示す。
(1)基板と、前記基板上に設けられ、光透過性を有する絶縁層を間に配設されると共に、前記絶縁層の下層側に設けられた第1配線および前記絶縁層の上層側に設けられた第2配線とを備え、前記第1配線は表面処理されていると共に、前記第2配線よりも大きな配線ピッチを有している多層配線基板。
(2)前記表面処理は、黒化処理、黒化代替粗化処理、エッチング処理、メッキ処理のうちのいずれかである、前記(1)に記載の多層配線基板。
(3)前記第1配線は、前記第1配線を構成する材料よりも反射率の低い、前記第1配線とは異なる金属材料によって被覆されている、前記(1)または(2)に記載の多層配線基板。
(4)前記金属材料は、前記第1配線を構成する材料よりも電界印加によるイオン遊離性が低い、前記(3)に記載の多層配線基板。
(5)前記第1配線および前記第2配線は、同一材料によって形成されている、前記(1)乃至(4)のいずれかに記載の多層配線基板。
(6)前記第1配線および前記第2配線は、銅(Cu)またはニッケル(Ni)によって形成されている、前記(1)乃至(5)のいずれかに記載の多層配線基板。
(7)前記第1配線および前記第2配線は、メッキによって形成されている、前記(1)乃至(6)のいずれかに記載の多層配線基板。
(8)前記金属材料は、ニッケル(Ni),パラジウム(Pd),金(Au),スズ(Sn),タングステン(W)またはチタン(Ti)あるいはこれら金属のいずれかを含む合金である、前記(3)乃至(7)のいずれかに記載の多層配線基板。
(9)多層配線基板上に設けられた複数の発光素子を備え、前記多層配線基板は、基板と、前記基板上に設けられ、光透過性を有する絶縁層を間に配設されると共に、前記絶縁層の下層側に設けられた第1配線および前記絶縁層の上層側に設けられた第2配線とを有し、前記第1配線は表面処理されていると共に、前記第2配線よりも大きな配線ピッチを有している表示装置。
(10)多層配線基板上に設けられた複数の電子デバイスを備え、前記多層配線基板は、基板と、前記基板上に設けられ、光透過性を有する絶縁層を間に配設されると共に、前記絶縁層の下層側に設けられた第1配線および前記絶縁層の上層側に設けられた第2配線とを有し、前記第1配線は表面処理されていると共に、前記第2配線よりも大きな配線ピッチを有している電子機器。
(11)前記電子デバイスは、受光素子である、前記(10)に記載の電子機器。
Claims (11)
- 基板と、
前記基板上に設けられ、光透過性を有する絶縁層を間に配設されると共に、前記絶縁層の下層側に設けられた第1配線および前記絶縁層の上層側に設けられた第2配線とを備え、
前記第1配線は表面処理されていると共に、前記第2配線よりも大きな配線ピッチを有している
多層配線基板。 - 前記表面処理は、黒化処理、黒化代替粗化処理、エッチング処理、メッキ処理のうちのいずれかである、請求項1に記載の多層配線基板。
- 前記第1配線は、前記第1配線を構成する材料よりも反射率の低い、前記第1配線とは異なる金属材料によって被覆されている、請求項1に記載の多層配線基板。
- 前記金属材料は、前記第1配線を構成する材料よりも電界印加によるイオン遊離性が低い、請求項3に記載の多層配線基板。
- 前記第1配線および前記第2配線は、同一材料によって形成されている、請求項1に記載の多層配線基板。
- 前記第1配線および前記第2配線は、銅(Cu)またはニッケル(Ni)によって形成されている、請求項1に記載の多層配線基板。
- 前記第1配線および前記第2配線は、メッキによって形成されている、請求項1に記載の多層配線基板。
- 前記金属材料は、ニッケル(Ni),パラジウム(Pd),金(Au),スズ(Sn),タングステン(W)またはチタン(Ti)あるいはこれら金属のいずれかを含む合金である、請求項3に記載の多層配線基板。
- 多層配線基板上に設けられた複数の発光素子を備え、
前記多層配線基板は、
基板と、
前記基板上に設けられ、光透過性を有する絶縁層を間に配設されると共に、前記絶縁層の下層側に設けられた第1配線および前記絶縁層の上層側に設けられた第2配線とを有し、
前記第1配線は表面処理されていると共に、前記第2配線よりも大きな配線ピッチを有している
表示装置。 - 多層配線基板上に設けられた複数の電子デバイスを備え、
前記多層配線基板は、
基板と、
前記基板上に設けられ、光透過性を有する絶縁層を間に配設されると共に、前記絶縁層の下層側に設けられた第1配線および前記絶縁層の上層側に設けられた第2配線とを有し、
前記第1配線は表面処理されていると共に、前記第2配線よりも大きな配線ピッチを有している
電子機器。 - 前記電子デバイスは、受光素子である、請求項10に記載の電子機器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014247066 | 2014-12-05 | ||
JP2014247066 | 2014-12-05 | ||
PCT/JP2015/081717 WO2016088522A1 (ja) | 2014-12-05 | 2015-11-11 | 多層配線基板および表示装置、並びに電子機器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016088522A1 JPWO2016088522A1 (ja) | 2017-09-21 |
JP6736472B2 true JP6736472B2 (ja) | 2020-08-05 |
Family
ID=56091474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016562363A Expired - Fee Related JP6736472B2 (ja) | 2014-12-05 | 2015-11-11 | 多層配線基板および表示装置、並びに電子機器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10930594B2 (ja) |
JP (1) | JP6736472B2 (ja) |
KR (1) | KR20170094148A (ja) |
CN (1) | CN107003256B (ja) |
WO (1) | WO2016088522A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017009725A (ja) * | 2015-06-19 | 2017-01-12 | ソニー株式会社 | 表示装置 |
JP6823262B2 (ja) * | 2017-03-15 | 2021-02-03 | ミツミ電機株式会社 | 光学モジュールの製造方法及び光学モジュール |
JP7173653B2 (ja) * | 2017-06-27 | 2022-11-16 | ソニーグループ株式会社 | 表示素子実装基板及び表示装置 |
WO2019160199A1 (ko) * | 2018-02-13 | 2019-08-22 | 주식회사 루멘스 | 다층 연성 회로 기판을 갖는 마이크로 엘이디 모듈 |
US11635186B2 (en) * | 2018-03-13 | 2023-04-25 | Motherson Innovations Company Limited | Polymeric substrate and a method of providing same |
WO2020121904A1 (ja) * | 2018-12-14 | 2020-06-18 | 国立大学法人大阪大学 | 表示装置およびその製造方法 |
JP7263204B2 (ja) * | 2019-10-16 | 2023-04-24 | 日東電工株式会社 | 配線回路基板の製造方法 |
US11887842B2 (en) | 2020-08-24 | 2024-01-30 | PlayNitride Display Co., Ltd. | Spliced micro light-emitting-diode display panel |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3551025B2 (ja) * | 1998-06-25 | 2004-08-04 | 松下電工株式会社 | プリント配線板のヴィアホールの検査方法 |
JP4480236B2 (ja) * | 1999-08-06 | 2010-06-16 | イビデン株式会社 | 電解めっき液、その液を用いた多層プリント配線板の製造方法および多層プリント配線板 |
EP1207730B1 (en) * | 1999-08-06 | 2009-09-16 | Ibiden Co., Ltd. | Electroplating solution, method for fabricating multilayer printed wiring board using the solution, and multilayer printed wiring board |
JP4876319B2 (ja) | 2001-03-09 | 2012-02-15 | ソニー株式会社 | 表示装置およびその製造方法 |
JP4887587B2 (ja) | 2001-08-01 | 2012-02-29 | ソニー株式会社 | 画像表示装置及びその製造方法 |
JP4454453B2 (ja) * | 2004-09-27 | 2010-04-21 | イビデン株式会社 | Icチップ実装用基板および光通信用デバイス |
JP2008172151A (ja) * | 2007-01-15 | 2008-07-24 | Dainippon Printing Co Ltd | 多層配線基板 |
CN101843181B (zh) * | 2007-11-01 | 2014-05-28 | 大日本印刷株式会社 | 内置元件电路板 |
JP2009111307A (ja) * | 2007-11-01 | 2009-05-21 | Dainippon Printing Co Ltd | 部品内蔵配線板 |
-
2015
- 2015-11-11 JP JP2016562363A patent/JP6736472B2/ja not_active Expired - Fee Related
- 2015-11-11 KR KR1020177013432A patent/KR20170094148A/ko not_active Application Discontinuation
- 2015-11-11 CN CN201580064624.2A patent/CN107003256B/zh active Active
- 2015-11-11 US US15/531,186 patent/US10930594B2/en active Active
- 2015-11-11 WO PCT/JP2015/081717 patent/WO2016088522A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN107003256A (zh) | 2017-08-01 |
US10930594B2 (en) | 2021-02-23 |
US20170345767A1 (en) | 2017-11-30 |
CN107003256B (zh) | 2021-04-20 |
WO2016088522A1 (ja) | 2016-06-09 |
JPWO2016088522A1 (ja) | 2017-09-21 |
KR20170094148A (ko) | 2017-08-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6736472B2 (ja) | 多層配線基板および表示装置、並びに電子機器 | |
US11247439B2 (en) | Display unit | |
KR102603494B1 (ko) | 디스플레이 장치 | |
KR20170080136A (ko) | 유기발광 표시장치 | |
CN111384079B (zh) | 显示装置 | |
KR20140080677A (ko) | 유기 발광 표시 장치 | |
US11521552B2 (en) | Display device | |
WO2019146115A1 (ja) | 表示デバイスおよび表示デバイスの製造方法 | |
JP2010244850A (ja) | 有機el表示装置 | |
US10884463B2 (en) | Method for manufacturing display device and display device | |
TWI734980B (zh) | 顯示裝置 | |
JP2018054678A (ja) | 表示装置及びその製造方法 | |
US11723243B2 (en) | Organic light emitting display device including a connecting structure with dummy pad on flexible substrate | |
US20100301366A1 (en) | Organic electro-luminescence device | |
KR20170080155A (ko) | 플렉서블 표시장치 및 그의 제조방법 | |
US20230275198A1 (en) | Display device and method for inspecting display device | |
KR20170080298A (ko) | 표시장치 | |
KR20210086342A (ko) | 산화물 반도체 패턴을 포함하는 디스플레이 장치 | |
US20220302095A1 (en) | Display device and method for manufacturing the same | |
US20230113586A1 (en) | Apparatus for manufacturing display apparatus and method of manufacturing display apparatus | |
KR102465139B1 (ko) | 유기 발광 표시 장치 및 그의 제조방법 | |
US11930670B2 (en) | Display device including an interlayer insulating layer selectively overlapping an active layer of a driving transistor and method for manufacturing the same | |
US20230194922A1 (en) | Backlight Unit and Display Device Including the Same | |
WO2020202281A1 (ja) | 表示装置 | |
JP2023063595A (ja) | 透明タッチディスプレイ装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181030 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181030 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191029 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191223 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200616 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200715 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6736472 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |