JP6735155B2 - 露光装置 - Google Patents
露光装置 Download PDFInfo
- Publication number
- JP6735155B2 JP6735155B2 JP2016109150A JP2016109150A JP6735155B2 JP 6735155 B2 JP6735155 B2 JP 6735155B2 JP 2016109150 A JP2016109150 A JP 2016109150A JP 2016109150 A JP2016109150 A JP 2016109150A JP 6735155 B2 JP6735155 B2 JP 6735155B2
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- Japan
- Prior art keywords
- substrate
- unit
- alignment
- exposure
- exposure apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 187
- 238000001514 detection method Methods 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 description 30
- 230000032258 transport Effects 0.000 description 8
- 238000005286 illumination Methods 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 3
- 244000144985 peep Species 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
10a 基板カセット(基板供給部)
10b 基板カセット(基板回収部)
20 搬送ロボット(基板搬送部)
30 プリアライメント部
31 ベース
32 支柱
33 ガイドブロック
33a ガイドブロック(コーナー用)
33b ガイドブロック(直線用)
34 光学センサ(検知手段)
40 基板ハンドラー(基板搬送部)
50 露光ステージ
60 基板矯正手段(基板矯正治具)
61 外枠
62 内枠
LS 照明光学系
PL 投影光学系
M フォトマスク(レチクル)
W 基板
Claims (3)
- 露光ステージ上に感光基板を位置させ、投影露光手段により前記感光基板にパターン像を露光する露光装置において、
前記感光基板の周縁部を保持する基板矯正手段と、
前記感光基板を供給する基板供給部と、
前記基板矯正手段の位置を規制するプリアライメント部と、
前記プリアライメント部により位置規制された前記感光基板の位置を検知する検知手段と、
前記基板供給部から前記プリアライメント部に前記感光基板を搬送する基板搬送部と、
前記プリアライメント部から前記露光ステージに前記感光基板を搬送する基板搬送部と
を備え、
前記プリアライメント部が、複数の支柱と、前記支柱の先端部にそれぞれ取り付けられたガイドブロックとを備えることを特徴とする露光装置。 - 前記支柱が、大きさの異なる前記基板矯正手段を支持するように設けられていることを特徴とする請求項1に記載の露光装置。
- 前記検知手段が、前記感光基板の端面を検知する基板端面検知手段を備えることを特徴とする請求項1または2に記載の露光装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016109150A JP6735155B2 (ja) | 2016-05-31 | 2016-05-31 | 露光装置 |
KR1020170065998A KR102320394B1 (ko) | 2016-05-31 | 2017-05-29 | 노광장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016109150A JP6735155B2 (ja) | 2016-05-31 | 2016-05-31 | 露光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017215451A JP2017215451A (ja) | 2017-12-07 |
JP6735155B2 true JP6735155B2 (ja) | 2020-08-05 |
Family
ID=60576927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016109150A Expired - Fee Related JP6735155B2 (ja) | 2016-05-31 | 2016-05-31 | 露光装置 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP6735155B2 (ja) |
KR (1) | KR102320394B1 (ja) |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05267119A (ja) * | 1992-03-19 | 1993-10-15 | Hitachi Ltd | 縮小投影露光装置 |
JPH07114233B2 (ja) * | 1992-04-01 | 1995-12-06 | 株式会社ニコン | 基板の位置決め装置 |
JPH07335725A (ja) * | 1994-06-08 | 1995-12-22 | Mitsubishi Electric Corp | 基板ホルダ |
JPH10275850A (ja) * | 1997-03-28 | 1998-10-13 | Nikon Corp | 露光装置 |
JP3626888B2 (ja) * | 1999-10-08 | 2005-03-09 | 日立ハイテク電子エンジニアリング株式会社 | 基板露光装置におけるマスク撓み補正機構及びマスク撓み補正方法並びにパターン形成方法 |
JP2001242631A (ja) * | 2000-02-28 | 2001-09-07 | Marugo Giken:Kk | 露光装置 |
JP2006071395A (ja) | 2004-09-01 | 2006-03-16 | Nikon Corp | 較正方法及び位置合わせ方法 |
JPWO2011065380A1 (ja) * | 2009-11-25 | 2013-04-18 | Nskテクノロジー株式会社 | プリアライメント装置及びプリアライメント方法 |
JP2011129674A (ja) * | 2009-12-17 | 2011-06-30 | Nuflare Technology Inc | 荷電粒子ビーム描画装置、荷電粒子ビーム描画方法及び基板ホルダ |
JP6157573B2 (ja) * | 2015-12-08 | 2017-07-05 | キヤノン株式会社 | パターン形成装置、塗布現像装置、それらを用いた基板搬送方法およびデバイスの製造方法 |
-
2016
- 2016-05-31 JP JP2016109150A patent/JP6735155B2/ja not_active Expired - Fee Related
-
2017
- 2017-05-29 KR KR1020170065998A patent/KR102320394B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2017215451A (ja) | 2017-12-07 |
KR20170135730A (ko) | 2017-12-08 |
KR102320394B1 (ko) | 2021-11-01 |
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