JP6730125B2 - 計測装置 - Google Patents
計測装置 Download PDFInfo
- Publication number
- JP6730125B2 JP6730125B2 JP2016151159A JP2016151159A JP6730125B2 JP 6730125 B2 JP6730125 B2 JP 6730125B2 JP 2016151159 A JP2016151159 A JP 2016151159A JP 2016151159 A JP2016151159 A JP 2016151159A JP 6730125 B2 JP6730125 B2 JP 6730125B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- wafer
- wavelength
- optical fiber
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000013307 optical fiber Substances 0.000 claims description 72
- 230000003287 optical effect Effects 0.000 claims description 44
- 230000003595 spectral effect Effects 0.000 claims description 27
- 238000005259 measurement Methods 0.000 claims description 19
- 230000005540 biological transmission Effects 0.000 claims description 7
- 238000004364 calculation method Methods 0.000 claims description 5
- 230000000875 corresponding effect Effects 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000000835 fiber Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0608—Height gauges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016151159A JP6730125B2 (ja) | 2016-08-01 | 2016-08-01 | 計測装置 |
TW106121252A TWI731993B (zh) | 2016-08-01 | 2017-06-26 | 測量裝置 |
CN201710623218.6A CN107677210B (zh) | 2016-08-01 | 2017-07-27 | 测量装置 |
KR1020170096006A KR102309389B1 (ko) | 2016-08-01 | 2017-07-28 | 계측 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016151159A JP6730125B2 (ja) | 2016-08-01 | 2016-08-01 | 計測装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018021761A JP2018021761A (ja) | 2018-02-08 |
JP6730125B2 true JP6730125B2 (ja) | 2020-07-29 |
Family
ID=61134141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016151159A Active JP6730125B2 (ja) | 2016-08-01 | 2016-08-01 | 計測装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6730125B2 (zh) |
KR (1) | KR102309389B1 (zh) |
CN (1) | CN107677210B (zh) |
TW (1) | TWI731993B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102421732B1 (ko) * | 2018-04-20 | 2022-07-18 | 삼성전자주식회사 | 반도체 기판 측정 장치 및 이를 이용한 플라즈마 처리 장치 |
JP2022514180A (ja) * | 2018-11-07 | 2022-02-10 | アプライド マテリアルズ インコーポレイテッド | 導波計測のための方法及び装置 |
JP7481090B2 (ja) * | 2019-01-09 | 2024-05-10 | 株式会社ディスコ | 厚み計測装置、及び厚み計測装置を備えた加工装置 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61165608A (ja) * | 1985-01-18 | 1986-07-26 | Hitachi Ltd | 膜厚測定装置 |
JPH1076464A (ja) * | 1996-08-30 | 1998-03-24 | Canon Inc | 研磨方法及びそれを用いた研磨装置 |
JP3774094B2 (ja) * | 1999-12-02 | 2006-05-10 | 株式会社日立製作所 | 膜厚、加工深さ測定装置及び成膜加工方法 |
JP2002005823A (ja) * | 2000-06-19 | 2002-01-09 | Dainippon Screen Mfg Co Ltd | 薄膜測定装置 |
US6891627B1 (en) * | 2000-09-20 | 2005-05-10 | Kla-Tencor Technologies Corp. | Methods and systems for determining a critical dimension and overlay of a specimen |
JP2003075120A (ja) * | 2001-09-07 | 2003-03-12 | Fuji Photo Film Co Ltd | 寸法測定装置およびロール巻取り装置 |
US7113624B2 (en) * | 2002-10-15 | 2006-09-26 | Palo Alto Research Center Incorporated | Imaging apparatus and method employing a large linear aperture |
CN2648401Y (zh) * | 2003-10-15 | 2004-10-13 | 浙江工程学院 | 磁悬浮微运动平台高度测量与校正装置 |
EP2270447A1 (en) * | 2003-10-27 | 2011-01-05 | The General Hospital Corporation | Method and apparatus for performing optical imaging using frequency-domain interferometry |
JP2005221401A (ja) * | 2004-02-06 | 2005-08-18 | Dainippon Printing Co Ltd | 膜厚測定方法および装置 |
CN1252445C (zh) * | 2004-04-12 | 2006-04-19 | 浙江大学 | 一种金属薄带厚度的测量方法及测量装置 |
EP1853874B1 (en) * | 2005-01-20 | 2009-09-02 | Zygo Corporation | Interferometer for determining characteristics of an object surface |
US7379189B2 (en) * | 2005-02-08 | 2008-05-27 | Tokyo Electron Limited | Temperature/thickness measuring apparatus, temperature/thickness measuring method, temperature/thickness measuring system, control system and control method |
CN101017083A (zh) * | 2006-02-08 | 2007-08-15 | 财团法人工业技术研究院 | 高密度多通道检测装置 |
KR100947464B1 (ko) * | 2008-02-13 | 2010-03-17 | 에스엔유 프리시젼 주식회사 | 두께 측정장치 |
JP5649286B2 (ja) * | 2008-12-26 | 2015-01-07 | キヤノン株式会社 | 光断層撮像装置、被検査物の画像を撮る撮像装置、光断層撮像装置の制御方法及びそのコンピュータプログラム |
JP2011102751A (ja) * | 2009-11-11 | 2011-05-26 | Seiko Epson Corp | 複屈折基板の板厚測定法及び板厚測定装置 |
JP5443180B2 (ja) * | 2010-01-13 | 2014-03-19 | 株式会社ディスコ | 厚み検出装置および研削機 |
CN101825434B (zh) * | 2010-04-28 | 2011-09-14 | 东北大学 | 一种基于闪耀光纤光栅解调的微位移传感器及检测方法 |
WO2011144624A1 (en) * | 2010-05-18 | 2011-11-24 | Marposs Societa' Per Azioni | Method and apparatus for optically measuring by interferometry the thickness of an object |
US20110304854A1 (en) * | 2010-06-14 | 2011-12-15 | Si Li | Instantaneous, phase measuring interferometer apparatus and method |
JP2012021856A (ja) * | 2010-07-14 | 2012-02-02 | Keyence Corp | 干渉膜厚計 |
CN101922919B (zh) * | 2010-09-07 | 2013-06-19 | 西安工业大学 | 一种光学零件几何参数非接触测量方法及其测量装置 |
JP5980476B2 (ja) * | 2010-12-27 | 2016-08-31 | 株式会社荏原製作所 | ポリッシング装置およびポリッシング方法 |
JP5752961B2 (ja) * | 2011-03-11 | 2015-07-22 | 株式会社ディスコ | 計測装置 |
TWI458960B (zh) * | 2012-03-20 | 2014-11-01 | Univ Minghsin Sci & Tech | 白光干涉量測裝置及其干涉量測方法 |
CN103134436B (zh) * | 2013-02-04 | 2015-06-03 | 博奥生物集团有限公司 | 全光谱超分辨率测量方法及非标记生物分子测量系统 |
TWI499756B (zh) * | 2013-05-10 | 2015-09-11 | Ind Tech Res Inst | 接合層的厚度量測系統與方法 |
JP6299500B2 (ja) * | 2014-01-29 | 2018-03-28 | 株式会社東京精密 | 多点距離測定装置及び方法並びに形状測定装置 |
CN103940352B (zh) * | 2014-04-25 | 2017-01-04 | 广州飞拓优视光电科技有限公司 | 一种超高精度结冰探测装置及其实时探测结冰厚度方法 |
CN204043623U (zh) * | 2014-08-25 | 2014-12-24 | 光库通讯(珠海)有限公司 | 薄膜厚度测量装置 |
JP2016080668A (ja) * | 2014-10-22 | 2016-05-16 | 株式会社島津製作所 | 表面処理状況モニタリング装置及び表面処理状況モニタリング方法 |
CN205003080U (zh) * | 2015-07-03 | 2016-01-27 | 南京航空航天大学 | 基于谱域干涉仪的折射率和厚度同步测量系统 |
-
2016
- 2016-08-01 JP JP2016151159A patent/JP6730125B2/ja active Active
-
2017
- 2017-06-26 TW TW106121252A patent/TWI731993B/zh active
- 2017-07-27 CN CN201710623218.6A patent/CN107677210B/zh active Active
- 2017-07-28 KR KR1020170096006A patent/KR102309389B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN107677210A (zh) | 2018-02-09 |
CN107677210B (zh) | 2020-12-22 |
TWI731993B (zh) | 2021-07-01 |
TW201805590A (zh) | 2018-02-16 |
KR20180014668A (ko) | 2018-02-09 |
JP2018021761A (ja) | 2018-02-08 |
KR102309389B1 (ko) | 2021-10-05 |
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