JP6729374B2 - 発光素子 - Google Patents
発光素子 Download PDFInfo
- Publication number
- JP6729374B2 JP6729374B2 JP2016529132A JP2016529132A JP6729374B2 JP 6729374 B2 JP6729374 B2 JP 6729374B2 JP 2016529132 A JP2016529132 A JP 2016529132A JP 2016529132 A JP2016529132 A JP 2016529132A JP 6729374 B2 JP6729374 B2 JP 6729374B2
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- layer
- light emitting
- light
- compound semiconductor
- emitting element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/3203—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth on non-planar substrates to create thickness or compositional variations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/48—Laser speckle optics
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
- H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1092—Multi-wavelength lasing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/320225—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth polar orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N9/00—Details of colour television systems
- H04N9/12—Picture reproducers
- H04N9/31—Projection devices for colour picture display, e.g. using electronic spatial light modulators [ESLM]
- H04N9/3141—Constructional details thereof
- H04N9/315—Modulator illumination systems
- H04N9/3161—Modulator illumination systems using laser light sources
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014127218 | 2014-06-20 | ||
JP2014127218 | 2014-06-20 | ||
PCT/JP2015/061808 WO2015194246A1 (ja) | 2014-06-20 | 2015-04-17 | 発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2015194246A1 JPWO2015194246A1 (ja) | 2017-04-20 |
JP6729374B2 true JP6729374B2 (ja) | 2020-07-22 |
Family
ID=54935243
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016529132A Active JP6729374B2 (ja) | 2014-06-20 | 2015-04-17 | 発光素子 |
Country Status (5)
Country | Link |
---|---|
US (3) | US9882352B2 (de) |
EP (1) | EP3159984B1 (de) |
JP (1) | JP6729374B2 (de) |
CN (1) | CN106463909B (de) |
WO (1) | WO2015194246A1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6135559B2 (ja) * | 2014-03-10 | 2017-05-31 | ソニー株式会社 | 半導体発光素子および半導体発光素子の製造方法ならびに半導体素子 |
JP6039026B1 (ja) * | 2015-09-04 | 2016-12-07 | Dowaエレクトロニクス株式会社 | n型オーミック電極の製造方法、ならびにn型オーミック電極、n型電極およびIII族窒化物半導体発光素子 |
JP6452651B2 (ja) | 2016-06-30 | 2019-01-16 | Dowaエレクトロニクス株式会社 | 半導体光デバイスの製造方法および半導体光デバイス |
WO2018020791A1 (ja) * | 2016-07-27 | 2018-02-01 | ソニー株式会社 | 窒化物半導体レーザおよび電子機器 |
JP6724634B2 (ja) * | 2016-07-28 | 2020-07-15 | 日亜化学工業株式会社 | 発光装置の製造方法 |
US11594859B2 (en) | 2017-07-18 | 2023-02-28 | Sony Corporation | Light emitting element and light emitting element array |
WO2019191760A1 (en) * | 2018-03-30 | 2019-10-03 | The Regents Of The University Of California | Method of fabricating non-polar and semi-polar devices using epitaxial lateral overgrowth |
DE112019003830T5 (de) * | 2018-07-30 | 2021-04-15 | Panasonic Corporation | Lichtemittierende Halbleitervorrichtung und Laservorrichtung vom externen Resonanztyp |
JP2021132144A (ja) * | 2020-02-20 | 2021-09-09 | ソニーグループ株式会社 | 発光デバイスおよび発光デバイスの製造方法ならびに画像表示装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1174562A (ja) * | 1997-06-30 | 1999-03-16 | Nichia Chem Ind Ltd | 窒化物半導体素子 |
WO1999021252A1 (en) | 1997-10-23 | 1999-04-29 | Honeywell Inc. | Filamented multi-wavelength vertical-cavity surface emitting laser |
JP3422413B2 (ja) | 1999-04-09 | 2003-06-30 | 日本電気株式会社 | 面発光型レーザアレイ及びその製造方法 |
US6341137B1 (en) * | 1999-04-27 | 2002-01-22 | Gore Enterprise Holdings, Inc. | Wavelength division multiplexed array of long-wavelength vertical cavity lasers |
JP3412004B2 (ja) | 1999-10-20 | 2003-06-03 | 東京工業大学長 | 半導体レーザの発振方法及び半導体レーザ |
JP4621393B2 (ja) * | 2001-03-27 | 2011-01-26 | 富士ゼロックス株式会社 | 表面発光型半導体レーザ及び表面発光型半導体レーザの製造方法 |
JP3705142B2 (ja) * | 2001-03-27 | 2005-10-12 | ソニー株式会社 | 窒化物半導体素子及びその作製方法 |
US6890785B2 (en) * | 2002-02-27 | 2005-05-10 | Sony Corporation | Nitride semiconductor, semiconductor device, and manufacturing methods for the same |
CN101145589A (zh) * | 2006-09-12 | 2008-03-19 | 上海宇体光电有限公司 | 具有均匀分布的V型坑的GaN基LED及其生长方法 |
KR100850718B1 (ko) | 2007-01-17 | 2008-08-06 | 삼성전자주식회사 | 스펙클 저감 레이저 |
JP5748949B2 (ja) * | 2008-11-20 | 2015-07-15 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
JP5436124B2 (ja) | 2009-09-29 | 2014-03-05 | 株式会社ジェイアール東日本建築設計事務所 | 建物用のドア装置 |
JP2011096856A (ja) | 2009-10-29 | 2011-05-12 | Sony Corp | 半導体レーザ |
JP2012222001A (ja) * | 2011-04-04 | 2012-11-12 | Jvc Kenwood Corp | レーザ光源装置及び画像表示装置 |
WO2013021606A1 (ja) * | 2011-08-09 | 2013-02-14 | パナソニック株式会社 | 窒化物半導体層成長用構造、積層構造、窒化物系半導体素子および光源ならびにこれらの製造方法 |
JP6133075B2 (ja) | 2013-02-12 | 2017-05-24 | 古河電気工業株式会社 | 面発光レーザ素子および面発光レーザアレイ素子 |
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2015
- 2015-04-17 US US15/303,344 patent/US9882352B2/en active Active
- 2015-04-17 CN CN201580031408.8A patent/CN106463909B/zh active Active
- 2015-04-17 WO PCT/JP2015/061808 patent/WO2015194246A1/ja active Application Filing
- 2015-04-17 JP JP2016529132A patent/JP6729374B2/ja active Active
- 2015-04-17 EP EP15810566.8A patent/EP3159984B1/de active Active
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2018
- 2018-01-02 US US15/860,211 patent/US10199799B2/en active Active
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2019
- 2019-01-28 US US16/259,226 patent/US10637209B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP3159984B1 (de) | 2022-01-12 |
US10637209B2 (en) | 2020-04-28 |
WO2015194246A1 (ja) | 2015-12-23 |
CN106463909A (zh) | 2017-02-22 |
US20180212402A1 (en) | 2018-07-26 |
EP3159984A1 (de) | 2017-04-26 |
JPWO2015194246A1 (ja) | 2017-04-20 |
US9882352B2 (en) | 2018-01-30 |
US10199799B2 (en) | 2019-02-05 |
US20170033533A1 (en) | 2017-02-02 |
US20190157842A1 (en) | 2019-05-23 |
CN106463909B (zh) | 2022-08-26 |
EP3159984A4 (de) | 2018-02-14 |
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