JP6722655B2 - 反射光学素子 - Google Patents

反射光学素子 Download PDF

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JP6722655B2
JP6722655B2 JP2017508479A JP2017508479A JP6722655B2 JP 6722655 B2 JP6722655 B2 JP 6722655B2 JP 2017508479 A JP2017508479 A JP 2017508479A JP 2017508479 A JP2017508479 A JP 2017508479A JP 6722655 B2 JP6722655 B2 JP 6722655B2
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Japan
Prior art keywords
channel
defects
reflective
layer system
optical element
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Japanese (ja)
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JP2017526007A5 (enExample
JP2017526007A (ja
Inventor
ハインリッヒ エーム ディルク
ハインリッヒ エーム ディルク
ベッカー モーリツ
ベッカー モーリツ
アメント イレーネ
アメント イレーネ
フォン ブランケンハーゲン ジゼラ
フォン ブランケンハーゲン ジゼラ
ウェーバー ヨルン
ウェーバー ヨルン
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カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0006—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means to keep optical surfaces clean, e.g. by preventing or removing dirt, stains, contamination, condensation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
    • G02B5/0875—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal the reflecting layers comprising two or more metallic layers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Public Health (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
JP2017508479A 2014-08-15 2015-08-07 反射光学素子 Active JP6722655B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014216240.8A DE102014216240A1 (de) 2014-08-15 2014-08-15 Reflektives optisches Element
DE102014216240.8 2014-08-15
PCT/EP2015/068306 WO2016023840A1 (de) 2014-08-15 2015-08-07 Reflektives optisches element

Publications (3)

Publication Number Publication Date
JP2017526007A JP2017526007A (ja) 2017-09-07
JP2017526007A5 JP2017526007A5 (enExample) 2018-09-20
JP6722655B2 true JP6722655B2 (ja) 2020-07-15

Family

ID=54011694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017508479A Active JP6722655B2 (ja) 2014-08-15 2015-08-07 反射光学素子

Country Status (4)

Country Link
US (1) US10061205B2 (enExample)
JP (1) JP6722655B2 (enExample)
DE (1) DE102014216240A1 (enExample)
WO (1) WO2016023840A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017084872A1 (en) * 2015-11-19 2017-05-26 Asml Netherlands B.V. Euv source chamber and gas flow regime for lithographic apparatus, multi-layer mirror and lithographic apparatus
DE102015225509A1 (de) 2015-12-16 2017-06-22 Carl Zeiss Smt Gmbh Reflektives optisches Element
DE102016213831A1 (de) 2016-07-27 2018-02-01 Carl Zeiss Smt Gmbh Reflektives optisches Element für die EUV-Lithographie
DE102016213839A1 (de) 2016-07-27 2016-12-15 Carl Zeiss Smt Gmbh Spiegel für ein mikrolithographisches Projektionsbelichtungssystem und Verfahren zur Bearbeitung eines Spiegels
DE102016224200A1 (de) 2016-12-06 2018-06-07 Carl Zeiss Smt Gmbh Verfahren zum Reparieren von reflektiven optischen Elementen für die EUV-Lithographie
DE102016226202A1 (de) 2016-12-23 2018-06-28 Carl Zeiss Smt Gmbh Optisches Element, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102017200667A1 (de) 2017-01-17 2018-07-19 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage oder ein Inspektionssystem
DE102017206256A1 (de) 2017-04-11 2018-10-11 Carl Zeiss Smt Gmbh Wellenfrontkorrekturelement zur Verwendung in einem optischen System
DE102017211824A1 (de) 2017-07-11 2017-09-21 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102017213178A1 (de) 2017-07-31 2018-06-21 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102018211498A1 (de) * 2018-07-11 2019-08-01 Carl Zeiss Smt Gmbh Optische Anordnung

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1499683A (en) * 1974-06-20 1978-02-01 Westinghouse Electric Corp High power laser mirror
EP1624467A3 (en) * 2003-10-20 2007-05-30 ASML Netherlands BV Lithographic apparatus and device manufacturing method
JP4025316B2 (ja) * 2004-06-09 2007-12-19 株式会社東芝 半導体装置の製造方法
US7332416B2 (en) * 2005-03-28 2008-02-19 Intel Corporation Methods to manufacture contaminant-gettering materials in the surface of EUV optics
DE102006008784A1 (de) * 2006-02-24 2007-09-06 Rodenstock Gmbh Kratzfeste entspiegelte Oberfläche mit Antifog-Eigenschaften
WO2008148516A2 (en) 2007-06-06 2008-12-11 Carl Zeiss Smt Ag Reflective optical element and method for operating an euv lithography device
KR20090105747A (ko) * 2008-04-03 2009-10-07 삼성전자주식회사 광주사장치 및 이를 채용한 화상형성장치
JP5061069B2 (ja) * 2008-05-20 2012-10-31 ギガフォトン株式会社 極端紫外光を用いる半導体露光装置
IT1400159B1 (it) * 2010-03-15 2013-05-17 St Microelectronics Srl Metodo di fotolitografia ad elevata risoluzione per la realizzazione di nanostrutture, in particolare nella fabbricazione di dispositivi elettronici integrati
JP5886279B2 (ja) * 2010-06-25 2016-03-16 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置およびリソグラフィ方法
DE102011076011A1 (de) * 2011-05-18 2012-11-22 Carl Zeiss Smt Gmbh Reflektives optisches Element und optisches System für die EUV-Lithographie
JP6253641B2 (ja) * 2012-05-21 2017-12-27 エーエスエムエル ネザーランズ ビー．ブイ． リフレクタ、ペリクル、リソグラフィマスク、膜、スペクトル純度フィルタ、および、装置
US9335206B2 (en) * 2012-08-30 2016-05-10 Kla-Tencor Corporation Wave front aberration metrology of optics of EUV mask inspection system

Also Published As

Publication number Publication date
US20170160639A1 (en) 2017-06-08
US10061205B2 (en) 2018-08-28
WO2016023840A1 (de) 2016-02-18
DE102014216240A1 (de) 2016-02-18
JP2017526007A (ja) 2017-09-07

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