JP2017526007A5 - - Google Patents

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Publication number
JP2017526007A5
JP2017526007A5 JP2017508479A JP2017508479A JP2017526007A5 JP 2017526007 A5 JP2017526007 A5 JP 2017526007A5 JP 2017508479 A JP2017508479 A JP 2017508479A JP 2017508479 A JP2017508479 A JP 2017508479A JP 2017526007 A5 JP2017526007 A5 JP 2017526007A5
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JP
Japan
Prior art keywords
optical element
channel
layer system
defect
reflective
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Application number
JP2017508479A
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English (en)
Japanese (ja)
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JP6722655B2 (ja
JP2017526007A (ja
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Priority claimed from DE102014216240.8A external-priority patent/DE102014216240A1/de
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Publication of JP2017526007A publication Critical patent/JP2017526007A/ja
Publication of JP2017526007A5 publication Critical patent/JP2017526007A5/ja
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Publication of JP6722655B2 publication Critical patent/JP6722655B2/ja
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JP2017508479A 2014-08-15 2015-08-07 反射光学素子 Active JP6722655B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014216240.8A DE102014216240A1 (de) 2014-08-15 2014-08-15 Reflektives optisches Element
DE102014216240.8 2014-08-15
PCT/EP2015/068306 WO2016023840A1 (de) 2014-08-15 2015-08-07 Reflektives optisches element

Publications (3)

Publication Number Publication Date
JP2017526007A JP2017526007A (ja) 2017-09-07
JP2017526007A5 true JP2017526007A5 (enExample) 2018-09-20
JP6722655B2 JP6722655B2 (ja) 2020-07-15

Family

ID=54011694

Family Applications (1)

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JP2017508479A Active JP6722655B2 (ja) 2014-08-15 2015-08-07 反射光学素子

Country Status (4)

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US (1) US10061205B2 (enExample)
JP (1) JP6722655B2 (enExample)
DE (1) DE102014216240A1 (enExample)
WO (1) WO2016023840A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017084872A1 (en) * 2015-11-19 2017-05-26 Asml Netherlands B.V. Euv source chamber and gas flow regime for lithographic apparatus, multi-layer mirror and lithographic apparatus
DE102015225509A1 (de) 2015-12-16 2017-06-22 Carl Zeiss Smt Gmbh Reflektives optisches Element
DE102016213831A1 (de) 2016-07-27 2018-02-01 Carl Zeiss Smt Gmbh Reflektives optisches Element für die EUV-Lithographie
DE102016213839A1 (de) 2016-07-27 2016-12-15 Carl Zeiss Smt Gmbh Spiegel für ein mikrolithographisches Projektionsbelichtungssystem und Verfahren zur Bearbeitung eines Spiegels
DE102016224200A1 (de) 2016-12-06 2018-06-07 Carl Zeiss Smt Gmbh Verfahren zum Reparieren von reflektiven optischen Elementen für die EUV-Lithographie
DE102016226202A1 (de) 2016-12-23 2018-06-28 Carl Zeiss Smt Gmbh Optisches Element, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102017200667A1 (de) 2017-01-17 2018-07-19 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage oder ein Inspektionssystem
DE102017206256A1 (de) 2017-04-11 2018-10-11 Carl Zeiss Smt Gmbh Wellenfrontkorrekturelement zur Verwendung in einem optischen System
DE102017211824A1 (de) 2017-07-11 2017-09-21 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102017213178A1 (de) 2017-07-31 2018-06-21 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
DE102018211498A1 (de) * 2018-07-11 2019-08-01 Carl Zeiss Smt Gmbh Optische Anordnung

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1499683A (en) * 1974-06-20 1978-02-01 Westinghouse Electric Corp High power laser mirror
EP1624467A3 (en) * 2003-10-20 2007-05-30 ASML Netherlands BV Lithographic apparatus and device manufacturing method
JP4025316B2 (ja) * 2004-06-09 2007-12-19 株式会社東芝 半導体装置の製造方法
US7332416B2 (en) * 2005-03-28 2008-02-19 Intel Corporation Methods to manufacture contaminant-gettering materials in the surface of EUV optics
DE102006008784A1 (de) * 2006-02-24 2007-09-06 Rodenstock Gmbh Kratzfeste entspiegelte Oberfläche mit Antifog-Eigenschaften
WO2008148516A2 (en) 2007-06-06 2008-12-11 Carl Zeiss Smt Ag Reflective optical element and method for operating an euv lithography device
KR20090105747A (ko) * 2008-04-03 2009-10-07 삼성전자주식회사 광주사장치 및 이를 채용한 화상형성장치
JP5061069B2 (ja) * 2008-05-20 2012-10-31 ギガフォトン株式会社 極端紫外光を用いる半導体露光装置
IT1400159B1 (it) * 2010-03-15 2013-05-17 St Microelectronics Srl Metodo di fotolitografia ad elevata risoluzione per la realizzazione di nanostrutture, in particolare nella fabbricazione di dispositivi elettronici integrati
JP5886279B2 (ja) * 2010-06-25 2016-03-16 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置およびリソグラフィ方法
DE102011076011A1 (de) * 2011-05-18 2012-11-22 Carl Zeiss Smt Gmbh Reflektives optisches Element und optisches System für die EUV-Lithographie
JP6253641B2 (ja) * 2012-05-21 2017-12-27 エーエスエムエル ネザーランズ ビー.ブイ. リフレクタ、ペリクル、リソグラフィマスク、膜、スペクトル純度フィルタ、および、装置
US9335206B2 (en) * 2012-08-30 2016-05-10 Kla-Tencor Corporation Wave front aberration metrology of optics of EUV mask inspection system

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