JP6713485B2 - 被覆された光学物体、および被覆された光学物体の製造方法 - Google Patents
被覆された光学物体、および被覆された光学物体の製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 22
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010432 diamond Substances 0.000 claims description 125
- 229910003460 diamond Inorganic materials 0.000 claims description 125
- 238000000576 coating method Methods 0.000 claims description 51
- 239000011248 coating agent Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 41
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 25
- 238000007740 vapor deposition Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 9
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 37
- 235000012239 silicon dioxide Nutrition 0.000 description 16
- 239000000377 silicon dioxide Substances 0.000 description 16
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 238000004050 hot filament vapor deposition Methods 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
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- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- WNEODWDFDXWOLU-QHCPKHFHSA-N 3-[3-(hydroxymethyl)-4-[1-methyl-5-[[5-[(2s)-2-methyl-4-(oxetan-3-yl)piperazin-1-yl]pyridin-2-yl]amino]-6-oxopyridin-3-yl]pyridin-2-yl]-7,7-dimethyl-1,2,6,8-tetrahydrocyclopenta[3,4]pyrrolo[3,5-b]pyrazin-4-one Chemical compound C([C@@H](N(CC1)C=2C=NC(NC=3C(N(C)C=C(C=3)C=3C(=C(N4C(C5=CC=6CC(C)(C)CC=6N5CC4)=O)N=CC=3)CO)=O)=CC=2)C)N1C1COC1 WNEODWDFDXWOLU-QHCPKHFHSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 210000002381 plasma Anatomy 0.000 description 2
- 230000001954 sterilising effect Effects 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 241000566146 Asio Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- -1 methane Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000003129 oil well Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/14—Protective coatings, e.g. hard coatings
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
Description
A) 基材を準備する段階、および
B) 反射を低減する積層構造を施与する段階、ここで、少なくとも1層のダイヤモンド層は気相堆積、殊に化学気相堆積、例えばホットワイヤ気相堆積、またはマイクロ波CVDによって生成され、引き続き、カバー層がマグネトロンスパッタを用いて生成される。
Claims (10)
- ・ 基材(1)
・ 前記基材(1)上に配置された光学被覆(2)
を含む被覆された物体(100)であって、前記光学被覆(2)が反射を低減する積層構造(3)を有し、前記反射を低減する積層構造(3)は、屈折率nAを有するカバー層(4)と、屈折率nD1>nAを有する少なくとも1層のダイヤモンド層(5)とを含み、前記ダイヤモンド層(5)は前記カバー層(4)と前記基材(1)との間に配置されており且つダイヤモンド結晶を有するか、またはダイヤモンド結晶からなり、前記ダイヤモンド層(5)は500nm未満の層厚を有し、前記カバー層(4)が、酸化アルミニウム、結晶性酸化アルミニウム、またはAl 2 O 3 とSiO 2 との混合物を有する、前記被覆された物体(100)。 - 前記反射を低減する積層構造(3)は、波長範囲420nm〜680nmにおいて1%未満の反射率を有し、前記ダイヤモンド層(5)は、カバー層(4)と屈折率n2<nD1を有する第2の層(7)との間に配置されており、前記カバー層(4)と前記ダイヤモンド層(5)とは直接機械的に接触しており、または前記ダイヤモンド層(5)と前記カバー層(4)との間に、屈折率n1を有する第1の層(6)が配置されており、ここでnD1>n2>n1が該当する、請求項1に記載の被覆された物体(100)。
- 前記積層構造(3)がさらに、1つまたはそれより多くの層の組を有し、前記層の組は前記基材に直接的に後続して配置されており、且つそれぞれ屈折率n1を有する第1の層(6)と屈折率n2>n1を有する第2の層(7)とを有し、
前記ダイヤモンド層(5)は、層の組の第1の層(6)と第2の層(7)との間に配置されているか、または
前記1つまたはそれより多くの層の組に前記ダイヤモンド層(5)が直接的に後続して配置されており、前記ダイヤモンド層(5)上に前記カバー層(4)が配置されており、
ここでnD1>n2>n1、且つn1≦nA≦n2、且つnD1>n2+x*0.6が該当し、ここで0.1≦x≦1である、または
ここでnD1≦n2>n1、且つn1≦nA≦n2が該当する、
請求項1または2に記載の被覆された物体(100)。 - 前記積層構造(3)が、少なくとも5層および/または最高で12層を有し、且つ、前記ダイヤモンド層(5)が、300nm以下の層厚を有する均質な層厚を有する、請求項1から3までのいずれか1項に記載の被覆された物体(100)。
- 前記カバー層(4)がナノインデンターで測定される層の硬度が20GPaより高く、且つ/または前記ダイヤモンド層(5)が60GPaより高い層の硬度を有する、請求項1から4までのいずれか1項に記載の被覆された物体(100)。
。 - 前記積層構造(3)が主波長λを有する光線の透過に適しており、前記ダイヤモンド層(5)の厚さについて0.3λ/4≦nD1*dD1≦0.8λ/4が該当し、且つ前記カバー層(4)の厚さについて0.7λ/4≦nA*dA≦1.3λ/4が該当し、且つ前記第1の層(6)の厚さについて0.7λ/4≦n1*d1≦1.3λ/4が該当し、且つ前記第2の層(7)の厚さについて0.7λ/4≦n2*d2≦1.3λ/4が該当する、請求項1から5までのいずれか1項に記載の被覆された物体(100)。
- 前記積層構造(3)が屈折率nD2を有する少なくとも1層の追加的なダイヤモンド層(8)を含み、
前記少なくとも1層の追加的なダイヤモンド層(8)はカバー層(4)と基材(2)との間に配置されており、
前記積層構造の少なくとも2層のダイヤモンド層(5、8)は、それぞれ屈折率n1を有する第1の層(6)および/または屈折率n2を有する第2の層(7)によって互いに分離されており、
前記カバー層(4)は前記ダイヤモンド層(5、8)の1つに直接的に後続して配置されており、
ここで、nD1>n1+0.8、且つnD2>n1+0.8、且つ/またはnD1>n2+0.4、且つnD2>n2+0.4、且つ/またはnD1=nD2が該当する、
請求項1から6までのいずれか1項に記載の被覆された物体(100)。 - 請求項1から7までのいずれか1項に記載の被覆された物体(100)の製造方法であって、以下の工程段階:
A) 基材(1)を準備する段階、および
B) 反射を低減する積層構造(3)を施与する段階
を有し、前記少なくとも1層のダイヤモンド層(5)が気相堆積によって生成され、引き続き、前記カバー層(4)がマグネトロンスパッタによって生成される、前記方法。 - 前記気相堆積および前記マグネトロンスパッタが、1つの装置内で実施される、請求項8に記載の方法。
- 前記気相堆積がプラズマCVDである、請求項8に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102015106368.9 | 2015-04-24 | ||
DE102015106368.9A DE102015106368B4 (de) | 2015-04-24 | 2015-04-24 | Beschichteter Gegenstand und Verfahren zur Herstellung eines beschichteten Gegenstands |
PCT/EP2016/058115 WO2016169825A1 (de) | 2015-04-24 | 2016-04-13 | Beschichteter optischer gegenstand und verfahren zur herstellung eines beschichteten optischen gegenstands |
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JP2018513423A JP2018513423A (ja) | 2018-05-24 |
JP6713485B2 true JP6713485B2 (ja) | 2020-06-24 |
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US (1) | US20180136369A1 (ja) |
EP (1) | EP3286584A1 (ja) |
JP (1) | JP6713485B2 (ja) |
CN (1) | CN108112266A (ja) |
DE (1) | DE102015106368B4 (ja) |
WO (1) | WO2016169825A1 (ja) |
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WO2023054420A1 (ja) | 2021-10-01 | 2023-04-06 | デクセリアルズ株式会社 | 光学積層体、及び反射防止膜 |
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US10224514B2 (en) * | 2016-12-03 | 2019-03-05 | Adam Khan | Multilayer diamond display system and method |
KR102688559B1 (ko) * | 2017-07-31 | 2024-07-26 | 코닝 인코포레이티드 | 단단한 반사-방지 코팅 |
WO2019049578A1 (ja) * | 2017-09-08 | 2019-03-14 | 株式会社ダイセル | 反射防止フィルム |
JP6636069B2 (ja) * | 2017-09-08 | 2020-01-29 | 株式会社ダイセル | 反射防止フィルム |
TWI830751B (zh) * | 2018-07-19 | 2024-02-01 | 美商應用材料股份有限公司 | 低溫高品質的介電膜及其形成方法 |
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JPS6296901A (ja) * | 1985-10-24 | 1987-05-06 | Seiko Epson Corp | 合成樹脂製レンズ |
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JPH05262538A (ja) * | 1992-03-18 | 1993-10-12 | Asahi Glass Co Ltd | ダイヤモンド膜付きガラス |
US5472787A (en) * | 1992-08-11 | 1995-12-05 | The United States Of America As Represented By The Secretary Of The Navy | Anti-reflection and anti-oxidation coatings for diamond |
JP2003248102A (ja) * | 2002-02-25 | 2003-09-05 | Hitachi Maxell Ltd | 多層構造の反射防止膜 |
US7683326B2 (en) * | 2002-07-09 | 2010-03-23 | Gentex Corporation | Vehicle vision system with high dynamic range |
US7306778B2 (en) * | 2003-06-19 | 2007-12-11 | Nanotech Llc | Diamond films and methods of making diamond films |
JP5461856B2 (ja) * | 2009-03-12 | 2014-04-02 | 神港精機株式会社 | プラズマcvd装置 |
EP2549521A1 (de) * | 2011-07-21 | 2013-01-23 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur Herstellung partikelarmer Schichten auf Substraten |
US9128218B2 (en) * | 2011-12-29 | 2015-09-08 | Visera Technologies Company Limited | Microlens structure and fabrication method thereof |
DE102012002927A1 (de) | 2012-02-14 | 2013-08-14 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Gegenstand mit reflexionsmindernder Beschichtung und Verfahren zu dessen Herstellung |
WO2014124206A1 (en) * | 2013-02-08 | 2014-08-14 | Corning Incorporated | Articles with anti-reflective high-hardness coatings and related methods |
US9366784B2 (en) * | 2013-05-07 | 2016-06-14 | Corning Incorporated | Low-color scratch-resistant articles with a multilayer optical film |
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WO2023054420A1 (ja) | 2021-10-01 | 2023-04-06 | デクセリアルズ株式会社 | 光学積層体、及び反射防止膜 |
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US20180136369A1 (en) | 2018-05-17 |
DE102015106368B4 (de) | 2017-03-02 |
EP3286584A1 (de) | 2018-02-28 |
JP2018513423A (ja) | 2018-05-24 |
WO2016169825A1 (de) | 2016-10-27 |
DE102015106368A1 (de) | 2016-10-27 |
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