JP6712190B2 - エピ基板 - Google Patents
エピ基板 Download PDFInfo
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- JP6712190B2 JP6712190B2 JP2016121846A JP2016121846A JP6712190B2 JP 6712190 B2 JP6712190 B2 JP 6712190B2 JP 2016121846 A JP2016121846 A JP 2016121846A JP 2016121846 A JP2016121846 A JP 2016121846A JP 6712190 B2 JP6712190 B2 JP 6712190B2
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- 239000000758 substrate Substances 0.000 title claims description 89
- 239000004065 semiconductor Substances 0.000 claims description 45
- 229910002704 AlGaN Inorganic materials 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000010410 layer Substances 0.000 description 157
- 239000013078 crystal Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 6
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241001223610 Cantao Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Recrystallisation Techniques (AREA)
Description
Claims (5)
- 成長用基板と、
前記成長用基板の上に形成されたバッファ層と、
前記バッファ層の上に形成されたn型導電層と、
前記n型導電層の上に形成された第1GaN層と、
前記第1GaN層の上に形成された電子供給層と、
前記電子供給層の上に形成された第2GaN層と、
を備え、Ga極性方向に積層されており、N面GaN系半導体装置の製造に使用されることを特徴とするエピ基板。 - 前記n型導電層は、n型InxAlyGazN層(1≧x,y,z≧0 x+y+z=1)を含むことを特徴とする請求項1に記載のエピ基板。
- 前記n型導電層は、n型GaN層を含むことを特徴とする請求項1に記載のエピ基板。
- 前記成長用基板は、Si基板であることを特徴とする請求項1から3のいずれかに記載のエピ基板。
- 前記電子供給層は、AlGaN層、InAlN層、AlN層のいずれかを含むことを特徴とする請求項1から3のいずれかに記載のエピ基板。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016121846A JP6712190B2 (ja) | 2016-06-20 | 2016-06-20 | エピ基板 |
TW106115076A TWI731077B (zh) | 2016-06-20 | 2017-05-08 | 磊晶基板 |
US15/591,716 US20170365667A1 (en) | 2016-06-20 | 2017-05-10 | Epitaxial substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016121846A JP6712190B2 (ja) | 2016-06-20 | 2016-06-20 | エピ基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017228578A JP2017228578A (ja) | 2017-12-28 |
JP6712190B2 true JP6712190B2 (ja) | 2020-06-17 |
Family
ID=60660411
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016121846A Active JP6712190B2 (ja) | 2016-06-20 | 2016-06-20 | エピ基板 |
Country Status (3)
Country | Link |
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US (1) | US20170365667A1 (ja) |
JP (1) | JP6712190B2 (ja) |
TW (1) | TWI731077B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6915591B2 (ja) * | 2018-06-13 | 2021-08-04 | 信越化学工業株式会社 | GaN積層基板の製造方法 |
JP7092051B2 (ja) * | 2019-01-18 | 2022-06-28 | 日本電信電話株式会社 | 電界効果トランジスタの作製方法 |
EP3723119A1 (en) * | 2019-04-10 | 2020-10-14 | IMEC vzw | Gan-si cointegration |
CN112750690A (zh) * | 2021-01-18 | 2021-05-04 | 西安电子科技大学 | 金刚石衬底上的N极性面GaN/InAlN异质结及制备方法 |
CN114242859B (zh) * | 2021-11-30 | 2023-05-02 | 福建兆元光电有限公司 | 一种Micro LED外延片制备方法 |
WO2023223375A1 (ja) * | 2022-05-16 | 2023-11-23 | 日本電信電話株式会社 | 半導体積層構造およびその作製方法、ならびに半導体装置の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4984407B2 (ja) * | 2005-03-15 | 2012-07-25 | 日立電線株式会社 | 半導体ウェハー及びその製造方法 |
US20090085065A1 (en) * | 2007-03-29 | 2009-04-02 | The Regents Of The University Of California | Method to fabricate iii-n semiconductor devices on the n-face of layers which are grown in the iii-face direction using wafer bonding and substrate removal |
US7915643B2 (en) * | 2007-09-17 | 2011-03-29 | Transphorm Inc. | Enhancement mode gallium nitride power devices |
JP2013004750A (ja) * | 2011-06-16 | 2013-01-07 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
JP5751074B2 (ja) * | 2011-08-01 | 2015-07-22 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
JP5765147B2 (ja) * | 2011-09-01 | 2015-08-19 | 富士通株式会社 | 半導体装置 |
JP5928366B2 (ja) * | 2013-02-13 | 2016-06-01 | 豊田合成株式会社 | Iii族窒化物半導体の製造方法 |
US9018056B2 (en) * | 2013-03-15 | 2015-04-28 | The United States Of America, As Represented By The Secretary Of The Navy | Complementary field effect transistors using gallium polar and nitrogen polar III-nitride material |
JP2015065241A (ja) * | 2013-09-24 | 2015-04-09 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
-
2016
- 2016-06-20 JP JP2016121846A patent/JP6712190B2/ja active Active
-
2017
- 2017-05-08 TW TW106115076A patent/TWI731077B/zh active
- 2017-05-10 US US15/591,716 patent/US20170365667A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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US20170365667A1 (en) | 2017-12-21 |
TW201810655A (zh) | 2018-03-16 |
JP2017228578A (ja) | 2017-12-28 |
TWI731077B (zh) | 2021-06-21 |
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