JP6705944B2 - パワーデバイス及びその製造方法 - Google Patents
パワーデバイス及びその製造方法 Download PDFInfo
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- JP6705944B2 JP6705944B2 JP2019516049A JP2019516049A JP6705944B2 JP 6705944 B2 JP6705944 B2 JP 6705944B2 JP 2019516049 A JP2019516049 A JP 2019516049A JP 2019516049 A JP2019516049 A JP 2019516049A JP 6705944 B2 JP6705944 B2 JP 6705944B2
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- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
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- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
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Description
図1、図2はそれぞれ本発明の第1実施例によるパワーデバイスの断面図と平面図を示し、図1は図2に示す平面図におけるAA’線に沿って得られた断面図である。この実施例において、パワーデバイス100は金属酸化物半導体電界効果トランジスタ(MOSFET)である。以下では、N型MOSFETを例として説明するが、本発明はこれに限定されない。
且つ
W1/(W1+S1)=W2/(W2+S2) (数2)
nは整数である。
図6a〜6hは本発明の第2実施例によるパワーデバイス製造方法における各段階の断面図を示す。
図7は本発明の第3実施例によるパワーデバイスの断面図を示す。
且つ
W1/(W1+S1)=W2/(W2+S2) (数2)
nは整数である。
図8は本発明の第4実施例によるパワーデバイスの断面図を示す。この実施例において、パワーデバイス300がダイオードである。
且つ
W1/(W1+S1)=W2/(W2+S2) (数2)
nは整数である。
Claims (31)
- 半導体基板と、
前記半導体基板に位置する第1ドーピング領域と、
前記第1ドーピング領域の第1領域に位置する複数の第2ドーピング領域と、
前記第1ドーピング領域の第2領域に位置する複数の第3ドーピング領域と、を備えるパワーデバイスにおいて、
前記半導体基板、前記第1ドーピング領域はそれぞれ第1ドーピングタイプであり、
前記複数の第2ドーピング領域、前記複数の第3ドーピング領域はそれぞれ第2ドーピングタイプであり、第2ドーピングタイプと第1ドーピングタイプとが反対であり、
前記複数の第2ドーピング領域は、互いに第1所定間隔を離間し、前記第1ドーピング領域とともに第1電荷補償構造を形成し、前記第1電荷補償構造と前記半導体基板が電流通路に位置し、
前記複数の第3ドーピング領域は、互いに第2所定間隔を離間し、前記第1ドーピング領域とともに第2電荷補償構造を形成し、前記第2電荷補償構造は前記パワーデバイスの連続的な表面電界を分散させることに用いられ、
前記第1電荷補償構造は、前記パワーデバイスのセル領域に位置し、前記第2電荷補償構造は、前記パワーデバイスのリング領域に位置し、前記リング領域は、前記セル領域を囲み、
前記複数の第2ドーピング領域及び前記複数の第3ドーピング領域は、それぞれ前記第1ドーピング領域において縦方向に沿って前記半導体基板へ延伸し、且つドーピング濃度が非線形に減少し、
前記複数の第2ドーピング領域及び前記複数の第3ドーピング領域の平均ドーピング濃度は、それぞれ前記第1ドーピング領域の平均ドーピング濃度よりも小さく、
前記複数の第2ドーピング領域の平均ドーピング濃度が前記複数の第3ドーピング領域の平均ドーピング濃度よりも大きいことにより、前記平均ドーピング濃度の差を利用して前記セル領域のオン抵抗を減少するとともに前記セル領域のブレークダウン電圧を向上させるパワーデバイス。 - 前記複数の第2ドーピング領域の平均ドーピング濃度は前記複数の第3ドーピング領域の平均ドーピング濃度よりも10%又はそれ以上大きい請求項1に記載のパワーデバイス。
- 前記複数の第2ドーピング領域は、それぞれ第1サブ領域及び第2サブ領域を備え、前記第1サブ領域の平均ドーピング濃度が前記第1ドーピング領域のドーピング濃度よりも小さくし、前記第2サブ領域の平均ドーピング濃度が前記第1ドーピング領域のドーピング濃度に等しい請求項1に記載のパワーデバイス。
- 前記第1サブ領域の平均ドーピング濃度は前記第1ドーピング領域の平均ドーピング濃度よりも20%又はそれ以上小さい請求項3に記載のパワーデバイス。
- 前記複数の第2ドーピング領域は第1横方向サイズを有し、前記複数の第3ドーピング領域は第2横方向サイズを有し、且つ前記第1横方向サイズは前記第2横方向サイズよりも大きい請求項1に記載のパワーデバイス。
- 前記第1横方向サイズと前記第1所定間隔との比率が、前記第2横方向サイズと前記第2所定間隔との比率に等しい請求項5に記載のパワーデバイス。
- 前記第1横方向サイズと前記第1所定間隔との和が前記第2横方向サイズと前記第2所定間隔との和の整数倍である請求項5に記載のパワーデバイス。
- 前記複数の第2ドーピング領域ではイオンを注入するとき第1イオン注入用量を使用し、前記複数の第3ドーピング領域ではイオンを注入するとき第2イオン注入用量を使用し、前記第1イオン注入用量と前記第2イオン注入用量の範囲は2E12〜2E13cm-2である請求項1に記載のパワーデバイス。
- 前記第1イオン注入用量と前記第2イオン注入用量とは同じである請求項8に記載のパワーデバイス。
- 前記第1イオン注入用量は前記第2イオン注入用量よりも20%又はそれ以上高い請求項8に記載のパワーデバイス。
- 前記複数の第2ドーピング領域及び前記複数の第3ドーピング領域はそれぞれ深い溝内に形成され、前記深い溝は前記第1ドーピング領域において縦方向に沿って前記半導体基板へ延伸し、且つ横方向サイズが減少する請求項1に記載のパワーデバイス。
- 前記深い溝はエッチングで形成され、且つ異なるエッチング角度によって横方向サイズが減少する形状を得る請求項11に記載のパワーデバイス。
- 前記深い溝の下部はエッチングの時使用されたエッチング角度が85°〜87°であり、上部はエッチングの時使用されたエッチング角度が88°〜89°である請求項12に記載のパワーデバイス。
- 前記セル領域は、
それぞれ前記複数の第2ドーピング領域の上方に位置する複数の第4ドーピング領域と、
それぞれ前記複数の第4ドーピング領域に位置する複数の第5ドーピング領域と、を更に備える請求項1に記載のパワーデバイス。 - 前記セル領域は、
それぞれ前記複数の第4ドーピング領域に位置し、且つ前記複数の第4ドーピング領域の引き出し端とする複数の第6ドーピング領域を更に備える請求項14に記載のパワーデバイス。 - 前記セル領域は、
それぞれゲート誘電体とゲート導体とを備え、且つ少なくとも一部が前記複数の第5ドーピング領域と前記第1ドーピング領域との間に位置する複数のゲートスタック層を更に備え、
前記複数の第4ドーピング領域及び前記複数の第5ドーピング領域はそれぞれ第2ドーピングタイプ及び第1ドーピングタイプであり、
前記パワーデバイスはMOSFETであり、前記半導体基板、前記複数の第4ドーピング領域、前記複数の第5ドーピング領域をそれぞれ前記MOSFETのドレイン領域、ウェル領域及びソース領域とし、前記複数の第4ドーピング領域が前記複数の第5ドーピング領域と前記第1ドーピング領域との間に位置してチャンネルを形成する請求項14に記載のパワーデバイス。 - 前記複数の第4ドーピング領域及び前記複数の第5ドーピング領域はそれぞれ第2ドーピングタイプであり、
前記パワーデバイスはダイオードであり、前記複数の第4ドーピング領域、前記半導体基板をそれぞれ前記ダイオードの陽極と陰極とする請求項14に記載のパワーデバイス。 - 前記リング領域は、
第2ドーピングタイプであるとともに前記第1ドーピング領域に位置する第7ドーピング領域、及び
第2ドーピングタイプであるとともに前記第1ドーピング領域に位置し、且つ前記複数の第3ドーピング領域と前記第7ドーピング領域から離間する第8ドーピング領域を更に備え、
前記第7ドーピング領域は前記セル領域における前記複数の第4ドーピング領域の中の少なくとも1つのドーピング領域まで横方向に延伸し、主接合を形成し、且つ前記第1ドーピング領域の表面から所定深さまで縦方向に延伸し、前記複数の第3ドーピング領域の中の少なくとも幾つかのドーピング領域と接触され、これにより前記複数の第3ドーピング領域の中の少なくとも幾つかのドーピング領域と前記複数の第2ドーピング領域の中の少なくとも幾つかのドーピング領域は前記主接合を介して接続され、
前記第8ドーピング領域は前記パワーデバイスの周辺を限定して且つカットオフリングとする請求項14に記載のパワーデバイス。 - 層間誘電体層と、
前記層間誘電体層を通して前記複数の第5ドーピング領域に電気的に接続された第1電極と、
前記層間誘電体層を通して前記第8ドーピング領域に電気的に接続された第2電極と、
前記半導体基板に電気的に接続された第3電極と、を更に備える請求項18に記載のパワーデバイス。 - 前記第1ドーピングタイプはN型とP型の中の一方であり、前記第2ドーピングタイプはN型とP型の中の他方である請求項1に記載のパワーデバイス。
- 前記パワーデバイスは金属酸化物半導体電界効果トランジスタ、絶縁ゲートバイポーラトランジスタ及びダイオードの中の1種から選ばれたものである請求項1に記載のパワーデバイス。
- 半導体基板に第1ドーピング領域を形成すること、
前記第1ドーピング領域の第1領域に複数の第2ドーピング領域を形成すること、及び
前記第1ドーピング領域の第2領域に複数の第3ドーピング領域を形成することを含むパワーデバイスの製造方法において、
前記半導体基板、前記第1ドーピング領域はそれぞれ第1ドーピングタイプであり、
前記複数の第2ドーピング領域と前記複数の第3ドーピング領域はそれぞれ第2ドーピングタイプであり、第2ドーピングタイプと第1ドーピングタイプとが反対であり、
前記複数の第2ドーピング領域は互いに第1所定間隔を離間し、前記第1ドーピング領域とともに第1電荷補償構造を形成し、前記第1電荷補償構造と前記半導体基板が電流通路に位置し、
前記複数の第3ドーピング領域は互いに第2所定間隔を離間し、前記第1ドーピング領域とともに第2電荷補償構造を形成し、前記第2電荷補償構造は前記パワーデバイスの連続的な表面電界を分散させることに用いられ、
前記第1電荷補償構造は、前記パワーデバイスのセル領域に位置し、前記第2電荷補償構造は、前記パワーデバイスのリング領域に位置し、前記リング領域は、前記セル領域を囲み、
前記複数の第2ドーピング領域及び前記複数の第3ドーピング領域は、それぞれ前記第1ドーピング領域において縦方向に沿って前記半導体基板へ延伸し、且つドーピング濃度が非線形に減少し、
前記複数の第2ドーピング領域及び前記複数の第3ドーピング領域の平均ドーピング濃度は、それぞれ前記第1ドーピング領域の平均ドーピング濃度よりも小さく、
前記複数の第2ドーピング領域の平均ドーピング濃度が前記複数の第3ドーピング領域の平均ドーピング濃度よりも大きいことにより、前記平均ドーピング濃度の差を利用して前記セル領域のオン抵抗を減少するとともに前記セル領域のブレークダウン電圧を向上させるパワーデバイスの製造方法。 - 前記第1ドーピング領域の第1領域に複数の第2ドーピング領域を形成することは第1マスクを介して第1イオンの注入を行うことを含み、
前記第1ドーピング領域の第2領域に複数の第3ドーピング領域を形成することは第2マスクを介して第2イオンの注入を行うことを含む請求項22に記載の方法。 - 第1マスクの開口が第1横方向サイズを有し、第2マスクの開口が第2横方向サイズを有し、且つ前記第1横方向サイズが前記第2横方向サイズよりも大きい請求項23に記載の方法。
- 前記第1イオンを注入する時、第1イオン注入用量を使用し、前記第2イオンを注入する時、第2イオン注入用量を使用し、前記第1イオン注入用量と前記第2イオン注入用量の範囲は2E12〜2E13cm-2である請求項23に記載の方法。
- 前記第1イオン注入用量と前記第2イオン注入用量とは同じである請求項25に記載の方法。
- 前記第1イオン注入用量は前記第2イオン注入用量よりも20%又はそれ以上高い請求項25に記載の方法。
- 前記第1ドーピング領域の第1領域に複数の第2ドーピング領域を形成することは第1深い溝内に複数の第1エピタキシャル層を充填することを含み、
前記第1ドーピング領域の第2領域に複数の第3ドーピング領域を形成することは第2深い溝内に複数の第2エピタキシャル層を充填することを含む請求項22に記載の方法。 - 前記第1深い溝及び前記第2深い溝は前記第1ドーピング領域において縦方向に沿って前記半導体基板へ延伸し、且つ横方向サイズが減少する請求項28に記載の方法。
- 前記第1深い溝及び前記第2深い溝はエッチングで形成され、且つ異なるエッチング角度によって横方向サイズが減少する形状を得る請求項29に記載の方法。
- 前記第1深い溝及び前記第2深い溝の下部はエッチングの時使用されたエッチング角度が85°〜87°であり、上部はエッチングの時使用されたエッチング角度が88°〜89°である請求項30に記載の方法。
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JP6485034B2 (ja) * | 2014-06-16 | 2019-03-20 | 富士電機株式会社 | 半導体装置の製造方法 |
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CN105097932B (zh) * | 2014-12-26 | 2019-02-26 | 杭州士兰微电子股份有限公司 | 高压功率器件及其形成方法 |
CN106571394B (zh) | 2016-11-01 | 2018-05-11 | 杭州士兰微电子股份有限公司 | 功率器件及其制造方法 |
CN206422069U (zh) | 2016-11-01 | 2017-08-18 | 杭州士兰微电子股份有限公司 | 功率器件 |
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2016
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WO2018082455A1 (zh) | 2018-05-11 |
US10937859B2 (en) | 2021-03-02 |
CN106571394A (zh) | 2017-04-19 |
CN106571394B (zh) | 2018-05-11 |
US20190172905A1 (en) | 2019-06-06 |
JP2019521529A (ja) | 2019-07-25 |
EP3506365A4 (en) | 2020-04-22 |
EP3506365A1 (en) | 2019-07-03 |
US20190140049A1 (en) | 2019-05-09 |
US10923563B2 (en) | 2021-02-16 |
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