JP6704165B1 - 半導体モジュール、dimmモジュール、及びそれらの製造方法 - Google Patents
半導体モジュール、dimmモジュール、及びそれらの製造方法 Download PDFInfo
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Abstract
Description
各実施形態に係る半導体モジュール1は、例えば、積層される複数のメモリチップ21(DRAMチップ)を有するメモリ部材である。半導体モジュール1は、例えば、基板上に積層された複数のメモリチップ21を配置して構成される。このとき、半導体モジュール1は、メモリチップ21の積層方向Dを配置されるメモリ基板10の面内方向に向けることで、配置されるメモリチップ21の枚数の増加を図ったものである。
次に、本発明の第1実施形態に係る半導体モジュール1、DIMMモジュール100、及びその製造方法について、図1から図6を参照して説明する。
本実施形態に係る半導体モジュール1は、例えば、DRAMモジュールである。半導体モジュール1は、図1及び図2に示すように、複数のメモリチップ21を有する。そして、半導体モジュール1は、複数のメモリチップ21をメモリ基板10の面内方向に沿って配置することで構成される。半導体モジュール1は、メモリ基板10と、メモリユニット20と、接着層40と、接続部50と、マウント部60と、を備える。なお接着層40は、例えばフィルム状の基材(図示せず)の両面に接着剤を塗布したものでも良い。また接着層40は、後述する隣接するメモリユニット20間のスペースを調整するスペーサとして機能しても良い。
メモリ基板10は、バンプ30と厚さ方向に貫通する電極及び電源回路12を通して、接続部50に電力を供給する。接続部50は、メモリユニット20の電極層23に電力を供給する。そして、電極層23は、複数の貫通電極22を通して、メモリチップ21のそれぞれに電力を供給する。
本実施形態に係る半導体モジュール1の製造方法は、メモリユニット形成工程と、個片化工程と、接着層形成工程と、接着工程と、マウント部配置工程と、接続部形成工程と、メモリチップ配置工程と、接続工程と、を備える。
(1) 複数のメモリチップ21を有する半導体モジュール1であって、一方の面である配置面に露出する電源回路12を有するメモリ基板10と、メモリ基板10の配置面に配置される少なくとも1つのメモリユニット20と、を備え、メモリユニット20は、積層方向Dを配置面に沿って配置される複数のメモリチップ21と、複数のメモリチップ21を積層方向Dに貫通する貫通電極22と、積層方向D一端面に積層され、貫通電極22及び電源回路12に接続される電極層23と、を備える。これにより、電極層23及び貫通電極22を介してメモリ基板10からメモリチップ21のそれぞれに電力を供給することができる。したがって、一側面からメモリチップ21に電力を供給する場合に比べ、電力供給を安定させることができる。したがって、メモリの大容量化を実現可能な半導体モジュール1を提供することができる。
次に、本発明の第2実施形態に係る半導体モジュール1及びその製造方法について、図7及び図8を用いて説明する。第2実施形態の説明にあたって、前述の実施形態と同一の構成要件については同一符号を付し、その説明を省略もしくは簡略化する。
第2実施形態に係る半導体モジュール1は、図7及び図8に示すように、パッケージ基板70と、封止部90と、をさらに備える点で、第1実施形態と異なる。また、第2実施形態に係る半導体モジュール1は、メモリ基板10が、バンプ30に代えて、ピラー31を有する点で第1実施形態と異なる。
第1実施形態において製造される半導体モジュール1において、バンプ30をピラー31に変更されて形成される。そして、ピラー31がパッケージ基板70のパッケージ電極71に位置合わせされて、ピラー31の先端部の半田によりパッケージ電極71に導通した後、封止部90によって封止される。これにより、本実施形態の半導体モジュール1が製造される。
(9) 半導体モジュール1は、パッケージ基板70と、封止部90と、をさらに備える。これにより、取り扱いのよい半導体モジュール1を提供することができる。例えば、JDEC(JEDEC Solid State Technology Association)に準拠するレイアウトを採用することで、汎用性の高い半導体モジュール1を提供することができる。
次に、本発明の第3実施形態に係るDIMMモジュール100及びその製造方法について図9及び図10を参照して説明する。
第3実施形態に係るDIMMモジュール100は、第1及び第2実施形態の複数の半導体モジュール1に加えて、DIMM基板101と、ヒートスプレッダ102と、を備える。また、第3実施形態に係るDIMMモジュール100の製造方法は、第1及び第2実施形態の半導体モジュール1の製造方法に加えて、載置工程と、ヒートスプレッダ配置工程と、を備える。
載置工程では、DIMM基板101の少なくとも一方の面である載置面に、製造された半導体モジュール1が複数載置される。本実施形態において、載置工程では、半導体モジュール1は、DIMM基板101の一面上に、所定の間隔を開けて直線状に配置される。
メモリチップ21のチップ厚を10μm〜20μm、メモリユニット201つにおけるメモリチップ21の積層数を4枚、接着層40の厚さを20μm〜50μm、メモリユニット20を複数接着後の厚さを最大5mmとすると、半導体モジュール1へのメモリユニット20の搭載数は83ユニット〜38ユニット、メモリチップ21の搭載枚数に換算すると332枚〜152枚となり、2GB(16Gb)のチップを用いて、664GB〜304GBのメモリ容量が実現できる。8つの半導体モジュール1を有するDIMMモジュール100は、5312GB〜2432GBのメモリ容量が実現できる。
(10) DIMMモジュール100は、上記の複数の半導体モジュール1と、少なくとも一方の面である載置面に、半導体モジュール1が複数載置されるDIMM基板101と、複数の半導体モジュール1のメモリユニット20のそれぞれに跨って配置されるとともに、接着層40に接触して配置されるヒートスプレッダ102と、を備える。これにより、大容量のメモリモジュールを実現することができる。また、ヒートスプレッダ102を接着層40に接触させて配置させることで、より冷却効果の高いDIMMモジュール100を提供することができる。
10 メモリ基板
11 通信回路
12 電源回路
20 メモリユニット
21 メモリチップ
22 貫通電極
23 電極層
30 バンプ
40 接着層
50 接続部
60 マウント部
70 パッケージ基板
71 パッケージ電極
80 半田ボール
90 封止部
100 DIMMモジュール
101 DIMM基板
102 ヒートスプレッダ
121 通信部
D 積層方向
Claims (12)
- 複数のメモリチップを有する半導体モジュールであって、
一方の面である配置面に露出する電源回路を有するメモリ基板と、
前記メモリ基板の配置面に配置される少なくとも1つのメモリユニットと、
を備え、
前記メモリユニットは、
積層方向を前記配置面に沿って配置される複数のメモリチップと、
複数の前記メモリチップを積層方向に貫通する貫通電極と、
積層方向一端面に積層され、前記貫通電極及び前記電源回路に接続される電極層と、
を備える半導体モジュール。 - 隣接される一対のメモリユニットの間に配置され、少なくとも一方の前記メモリユニットの前記電極層に接触する接着層をさらに備える請求項1に記載の半導体モジュール。
- 前記電極層の面内方向一端と前記電源回路との間に配置され、前記電極層及び前記電源回路を電気的に接続する接続部をさらに備える請求項2に記載の半導体モジュール。
- 前記メモリチップは、前記メモリ基板に隣接する一端部に、前記メモリ基板の通信回路と通信可能な通信部を有する請求項2又は3に記載の半導体モジュール。
- 前記通信部と前記通信回路との間に配置され、前記メモリ基板の配置面に前記メモリユニットをマウントするマウント部をさらに備える請求項4に記載の半導体モジュール。
- 請求項1から5のいずれかに記載の複数の前記半導体モジュールと、
少なくとも一方の面である載置面に、前記半導体モジュールが複数載置されるDIMM基板と、
を備えるDIMMモジュール。 - 請求項2から5のいずれかに記載の複数の前記半導体モジュールと、
少なくとも一方の面である載置面に、前記半導体モジュールが複数載置されるDIMM基板と、
複数の前記半導体モジュールのメモリユニットのそれぞれに跨って配置されるとともに、前記接着層に接触して配置されるヒートスプレッダと、
を備えるDIMMモジュール。 - 複数のメモリチップを有する半導体モジュールの製造方法であって、
前記メモリチップを積層するとともに、前記メモリチップを貫通する貫通電極と前記メモリチップの積層方向一端面に配置される電極層とを形成してメモリユニットを形成するメモリユニット形成工程と、
一方の面である配置面に露出する電源回路を有するメモリ基板に前記メモリチップを配置するメモリチップ配置工程であって、前記電極層の面内方向一端と前記電源回路とを対向配置するメモリチップ配置工程と、
前記メモリ基板に対して前記メモリユニットを電気的に接続する接続工程と、
を備える半導体モジュールの製造方法。 - 前記メモリユニット形成工程の後、前記メモリチップ配置工程の前に、前記メモリユニットの前記電極層の積層方向一面に他の前記メモリユニットを接着するための接着層を形成する接着層形成工程と、
前記接着層形成工程の後、前記メモリチップ配置工程の前に、前記接着層を用いて、2つの前記メモリユニットを接着する接着工程と、
をさらに備える請求項8に記載の半導体モジュールの製造方法。 - 前記メモリユニット形成工程の後、前記接着層形成工程の前に、前記メモリユニットを個片化する個片化工程をさらに備える請求項9に記載の半導体モジュールの製造方法。
- 請求項8から10のいずれかの半導体モジュールの製造方法と、
DIMM基板の少なくとも一方の面である載置面に、製造された前記半導体モジュールを複数載置する載置工程と、
を備えるDIMMモジュールの製造方法。 - 請求項9又は10の半導体モジュールの製造方法と、
DIMM基板の少なくとも一方の面である載置面に、製造された前記半導体モジュールを複数載置する載置工程と、
複数の前記半導体モジュールのメモリユニットのそれぞれに跨って、前記接着層に接触してヒートスプレッダを配置するヒートスプレッダ配置工程と、
を備えるDIMMモジュールの製造方法。
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