JP6699195B2 - 電子デバイスの製造方法 - Google Patents
電子デバイスの製造方法 Download PDFInfo
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- JP6699195B2 JP6699195B2 JP2016010394A JP2016010394A JP6699195B2 JP 6699195 B2 JP6699195 B2 JP 6699195B2 JP 2016010394 A JP2016010394 A JP 2016010394A JP 2016010394 A JP2016010394 A JP 2016010394A JP 6699195 B2 JP6699195 B2 JP 6699195B2
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- 238000006243 chemical reaction Methods 0.000 description 23
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- 229910052735 hafnium Inorganic materials 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
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- PDGHBHKZHSFTHO-UHFFFAOYSA-N CCN(C)[Ta](=NC(C)(C)C)(N(C)CC)N(C)CC Chemical compound CCN(C)[Ta](=NC(C)(C)C)(N(C)CC)N(C)CC PDGHBHKZHSFTHO-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
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- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 239000002052 molecular layer Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
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- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016010394A JP6699195B2 (ja) | 2016-01-22 | 2016-01-22 | 電子デバイスの製造方法 |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2016010394A JP6699195B2 (ja) | 2016-01-22 | 2016-01-22 | 電子デバイスの製造方法 |
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| Publication Number | Publication Date |
|---|---|
| JP2017129799A JP2017129799A (ja) | 2017-07-27 |
| JP2017129799A5 JP2017129799A5 (enExample) | 2018-10-18 |
| JP6699195B2 true JP6699195B2 (ja) | 2020-05-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016010394A Active JP6699195B2 (ja) | 2016-01-22 | 2016-01-22 | 電子デバイスの製造方法 |
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| Country | Link |
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| JP (1) | JP6699195B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7106410B2 (ja) * | 2018-09-24 | 2022-07-26 | シチズンファインデバイス株式会社 | 強誘電性液晶セルの製造方法 |
| CN111190310B (zh) * | 2018-11-15 | 2022-11-18 | 立景光电股份有限公司 | 显示面板 |
| JP2021001966A (ja) * | 2019-06-21 | 2021-01-07 | セイコーエプソン株式会社 | 電気光学装置、及び電子機器 |
| KR102448198B1 (ko) * | 2020-11-09 | 2022-09-29 | 솔루스첨단소재 주식회사 | 배리어 실란트 조성물 및 이를 이용한 표시패널의 제조방법 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4082239B2 (ja) * | 2003-02-27 | 2008-04-30 | セイコーエプソン株式会社 | 電気光学装置の製造方法、電気光学装置、および電子機器 |
| JP2011059374A (ja) * | 2009-09-10 | 2011-03-24 | Seiko Epson Corp | 電気光学装置、その製造方法、および電子機器 |
| KR101977708B1 (ko) * | 2012-09-04 | 2019-08-29 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
| KR20140122910A (ko) * | 2013-04-11 | 2014-10-21 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
| JP6361327B2 (ja) * | 2014-07-02 | 2018-07-25 | セイコーエプソン株式会社 | 電気光学装置、及び電子機器 |
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