JP6694890B2 - 散乱線グリッド、層板及び層板の製造方法 - Google Patents
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/10—Scattering devices; Absorbing devices; Ionising radiation filters
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/02—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
- G21K1/025—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators using multiple collimators, e.g. Bucky screens; other devices for eliminating undesired or dispersed radiation
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
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- G—PHYSICS
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- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/02—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diaphragms, collimators
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/06—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption
- G01N23/083—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and measuring the absorption the radiation being X-rays
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Description
従ってこの層板は線吸収性能が高いという点で優れている。というのは、この層板の箔状のサブストレートもコーティング層も線の遮蔽に寄与するからである。高い線吸収係数を有するサブストレート材料および高い線吸収係数を有するコーティング材料を選ぶことにより、要求された散乱線吸収において、非常に薄い厚さの層板を実現することができ、これによって、一次線の望ましくない吸収を低く抑えることができる。
この散乱線除去用グリッド(10)(図1では、複数の細片状層板の縦方向に対して垂直な面における断面で示されている)は多数のテープ状層板を有し、この場合、複数のX線吸収層板(16)と複数のX線透過層板(17)が交互に配置されている。これらの層板(16、17)は入射一次線に対してほゞ垂直な面において、および、層板の縦方向において(この縦方向は図示された断面に対して垂直である)ほゞ平行に配置されている。これらの層板(16、17)は好適には、図1に示されているように、X線源(11)の焦点に向けてアラインメントされている。すなわち、これらの層板(16、17)は互いに正確に平行ではなく、非常に小さい角度で互いに傾けられている。この場合、散乱線除去用グリッドのほゞ中心点の層板は散乱線除去用グリッドの面に対して垂直であり、他の層板は中心点から離れるにつれて傾きが大きくなっている。この散乱線除去用グリッド(10)はこの散乱線除去用グリッドに斜めに入射する散乱線を吸収し、X線源方向からのX線を線を透過させる層板の領域において透過させる。この散乱線除去用グリッド(10)は図1では平らな実施形態で示されているが、湾曲した実施形態、特に円筒面の一部の形状での実施形態も可能である。
11 X線源
12 一次線
13 検査対象
14 散乱線
15 X線検査器
16、20、30 吸収層板
17 透過層板
21、31 サブストレート
22、32、33 コーティング層
24、25、34、35 側辺
Claims (9)
- 散乱線グリッド(10)で使用するためのX線又はガンマ線を吸収する層板(16;20;30)であって、モリブデンをベースにした材料から成る箔状サブストレート(21;31)とタングステンをベースにした材料から成る少なくとも1つのコーティング層(22;32、33)とを有する層構造で構成された層板であって、前記箔状サブストレート(21;31)の片面が、タングステンをベースにした材料から成る前記少なくとも1つのコーティング層(22;32、33)でコーティングされているか又は前記箔状サブストレート(21;31)の両面が、それぞれ、タングステンをベースにした材料から成る前記少なくとも1つのコーティング層(22;32、33)でコーティングされていることを特徴とする層板。
- 前記層板(16;20;30)の厚さが10μmから60μmであることを特徴とする、請求項1に記載の層板。
- 前記サブストレート材料のX線又はガンマ線に対する吸収係数が、前記少なくとも1つのコーティング層の材料のそれよりも小さいことを特徴とする、請求項1又は2に記載の層板。
- X線又はガンマ線用の散乱線グリッド(10)であって、交互に配置された第1および第2層板(16、20、30;17)で構成された積層体から成る散乱線グリッドにおいて、前記第1層板(16;20;30)が請求項1から3のいずれか1項による層板で構成され、前記第2層板(17)が実質的にX線又はガンマ線を透過する材料で作られている散乱線グリッド。
- 請求項1から3のいずれか1項に記載のX線又はガンマ線を吸収する層板の製造方法であって、次のステップを有する方法:
・モリブデンをベースにした材料から箔を作るステップ、
・前記箔を、タングステンをベースにした材料で、ロール−ロール式のコーティング設備を用いて、コーティングするステップ、及び
・前記箔を細片に切断するステップ。 - 前記箔のコーティングが物理蒸着法、化学蒸着法、熱溶射法または溶融塩電解法で行われることを特徴とする、請求項5に記載の方法。
- 被着された前記コーティング層の厚さが5μmから50μmであることを特徴とする、請求項5または6に記載の方法。
- 前記箔の厚さが5μmから30μmであることを特徴とする、請求項5から7のいずれか1項に記載の方法。
- モリブデンをベースにした金属材料から成る箔状サブストレートとタングステンをベースにした金属材料から成る少なくとも1つのコーティング層とを有する箔を、請求項1から3のいずれか1項によるX線又はガンマ線を吸収する層板として、散乱線グリッドにおいて使用する方法。
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ATGM18/2015 | 2015-01-27 | ||
ATGM18/2015U AT14686U1 (de) | 2015-01-27 | 2015-01-27 | Streustrahlenraster |
PCT/AT2016/000004 WO2016118989A1 (de) | 2015-01-27 | 2016-01-22 | Streustrahlenraster |
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JP2018508765A JP2018508765A (ja) | 2018-03-29 |
JP6694890B2 true JP6694890B2 (ja) | 2020-05-20 |
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US (1) | US10706984B2 (ja) |
EP (1) | EP3251127B1 (ja) |
JP (1) | JP6694890B2 (ja) |
AT (1) | AT14686U1 (ja) |
WO (1) | WO2016118989A1 (ja) |
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US10329926B2 (en) * | 2016-05-09 | 2019-06-25 | United Technologies Corporation | Molybdenum-silicon-boron with noble metal barrier layer |
JP2018105681A (ja) * | 2016-12-26 | 2018-07-05 | 住友電気工業株式会社 | 放射線遮蔽板 |
JP6857071B2 (ja) * | 2017-04-05 | 2021-04-14 | 浜松ホトニクス株式会社 | X線用金属グリッド、x線撮像装置、及びx線用金属グリッドの製造方法 |
JP6914702B2 (ja) * | 2017-04-05 | 2021-08-04 | 浜松ホトニクス株式会社 | X線用金属グリッド、x線撮像装置、及びx線用金属グリッドの製造方法 |
EP3454051A1 (en) * | 2017-09-06 | 2019-03-13 | Koninklijke Philips N.V. | Diffraction grating for x-ray phase contrast and/or dark-field imaging |
US10816486B2 (en) * | 2018-03-28 | 2020-10-27 | Kla-Tencor Corporation | Multilayer targets for calibration and alignment of X-ray based measurement systems |
KR101997862B1 (ko) * | 2018-12-26 | 2019-07-08 | 제이피아이헬스케어 주식회사 | 격자형 x선 그리드 제조 방법 |
DE102020111460A1 (de) | 2020-04-27 | 2021-10-28 | Ald Vacuum Technologies Gmbh | Additive Manufacturing System für pulverförmiges Ausgangsmaterial und Verfahren zur Herstellung eines Bauteils |
CN113823434B (zh) * | 2020-06-19 | 2023-09-08 | 中国科学院福建物质结构研究所 | 一种防散射栅格及其制备方法 |
CN116039176A (zh) * | 2022-12-28 | 2023-05-02 | 中国兵器科学研究院宁波分院 | 一种工业ct散射线校正板的制备方法 |
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US20050084072A1 (en) | 2003-10-17 | 2005-04-21 | Jmp Industries, Inc., An Ohio Corporation | Collimator fabrication |
JP2008168110A (ja) | 2006-12-14 | 2008-07-24 | Shimadzu Corp | 散乱線除去グリッドおよびその製造方法 |
JP5059521B2 (ja) | 2007-08-29 | 2012-10-24 | 株式会社放電精密加工研究所 | 散乱線除去グリッドの製造方法 |
CN101934607A (zh) * | 2009-06-30 | 2011-01-05 | 扬州腾飞电缆电器材料有限公司 | 一种铜铝箔膜复合带 |
US9048002B2 (en) | 2010-10-08 | 2015-06-02 | Turtle Bay Partners, Llc | Three-dimensional focused anti-scatter grid and method for manufacturing thereof |
JP2012122840A (ja) | 2010-12-08 | 2012-06-28 | Fujifilm Corp | 放射線画像撮影用グリッド及びその製造方法、並びに、放射線画像撮影システム |
US20120163553A1 (en) * | 2010-12-27 | 2012-06-28 | Analogic Corporation | Three-dimensional metal printing |
DE102013204269B4 (de) * | 2013-03-12 | 2015-09-10 | Siemens Aktiengesellschaft | Anordnung zur reversiblen Änderung des Fokusabstands eines Streustrahlenrasters und Verfahren zum Einstellen des Fokusabstands eines Streustrahlenrasters |
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2015
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2016
- 2016-01-22 WO PCT/AT2016/000004 patent/WO2016118989A1/de active Application Filing
- 2016-01-22 JP JP2017538614A patent/JP6694890B2/ja active Active
- 2016-01-22 EP EP16705892.4A patent/EP3251127B1/de active Active
- 2016-01-22 US US15/546,375 patent/US10706984B2/en active Active
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Publication number | Publication date |
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US20180268952A1 (en) | 2018-09-20 |
AT14686U1 (de) | 2016-04-15 |
JP2018508765A (ja) | 2018-03-29 |
US10706984B2 (en) | 2020-07-07 |
EP3251127A1 (de) | 2017-12-06 |
WO2016118989A1 (de) | 2016-08-04 |
EP3251127B1 (de) | 2023-01-11 |
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