JP6684273B2 - シロキサン粒子材料を用いたledランプ - Google Patents
シロキサン粒子材料を用いたledランプ Download PDFInfo
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- JP6684273B2 JP6684273B2 JP2017518606A JP2017518606A JP6684273B2 JP 6684273 B2 JP6684273 B2 JP 6684273B2 JP 2017518606 A JP2017518606 A JP 2017518606A JP 2017518606 A JP2017518606 A JP 2017518606A JP 6684273 B2 JP6684273 B2 JP 6684273B2
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- led lamp
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- 239000002245 particle Substances 0.000 title claims description 151
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 title claims description 129
- 239000000463 material Substances 0.000 title claims description 101
- 150000001875 compounds Chemical class 0.000 claims description 96
- 229920000642 polymer Polymers 0.000 claims description 94
- 239000000203 mixture Substances 0.000 claims description 87
- 239000000758 substrate Substances 0.000 claims description 82
- 239000000853 adhesive Substances 0.000 claims description 46
- 230000001070 adhesive effect Effects 0.000 claims description 46
- 125000000217 alkyl group Chemical group 0.000 claims description 43
- 125000003118 aryl group Chemical group 0.000 claims description 42
- 238000006116 polymerization reaction Methods 0.000 claims description 37
- -1 copper nitride Chemical class 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 33
- 125000000524 functional group Chemical group 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 239000003054 catalyst Substances 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 239000004332 silver Substances 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 238000004132 cross linking Methods 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 229910052723 transition metal Inorganic materials 0.000 claims description 7
- 150000003624 transition metals Chemical class 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- CYRMSUTZVYGINF-UHFFFAOYSA-N trichlorofluoromethane Chemical compound FC(Cl)(Cl)Cl CYRMSUTZVYGINF-UHFFFAOYSA-N 0.000 claims description 3
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims description 2
- BLJNPOIVYYWHMA-UHFFFAOYSA-N alumane;cobalt Chemical compound [AlH3].[Co] BLJNPOIVYYWHMA-UHFFFAOYSA-N 0.000 claims description 2
- 229910001337 iron nitride Inorganic materials 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims 2
- 230000003213 activating effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 70
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 51
- 238000001723 curing Methods 0.000 description 31
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 26
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 23
- 239000000945 filler Substances 0.000 description 22
- 229910002601 GaN Inorganic materials 0.000 description 20
- 239000003795 chemical substances by application Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 19
- 239000002184 metal Substances 0.000 description 19
- 125000003342 alkenyl group Chemical group 0.000 description 18
- 229910000077 silane Inorganic materials 0.000 description 18
- 239000002904 solvent Substances 0.000 description 18
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 17
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 15
- 239000002253 acid Substances 0.000 description 15
- 125000000304 alkynyl group Chemical group 0.000 description 15
- 150000001412 amines Chemical class 0.000 description 15
- 239000004593 Epoxy Substances 0.000 description 14
- 125000003545 alkoxy group Chemical group 0.000 description 14
- 239000007822 coupling agent Substances 0.000 description 14
- 230000008021 deposition Effects 0.000 description 14
- OLLFKUHHDPMQFR-UHFFFAOYSA-N dihydroxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](O)(O)C1=CC=CC=C1 OLLFKUHHDPMQFR-UHFFFAOYSA-N 0.000 description 14
- 239000008393 encapsulating agent Substances 0.000 description 12
- 239000000047 product Substances 0.000 description 11
- 150000004756 silanes Chemical class 0.000 description 11
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- 125000004432 carbon atom Chemical group C* 0.000 description 10
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 10
- 239000000178 monomer Substances 0.000 description 10
- 238000010992 reflux Methods 0.000 description 10
- 238000001429 visible spectrum Methods 0.000 description 10
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 9
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 239000000654 additive Substances 0.000 description 8
- 239000002318 adhesion promoter Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 8
- 229910052736 halogen Inorganic materials 0.000 description 8
- 150000002367 halogens Chemical class 0.000 description 8
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- ZLDHYRXZZNDOKU-UHFFFAOYSA-N n,n-diethyl-3-trimethoxysilylpropan-1-amine Chemical compound CCN(CC)CCC[Si](OC)(OC)OC ZLDHYRXZZNDOKU-UHFFFAOYSA-N 0.000 description 8
- 150000002989 phenols Chemical class 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 125000001424 substituent group Chemical group 0.000 description 8
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 7
- 239000003963 antioxidant agent Substances 0.000 description 7
- 235000006708 antioxidants Nutrition 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 7
- 239000012299 nitrogen atmosphere Substances 0.000 description 7
- 238000005245 sintering Methods 0.000 description 7
- 239000003381 stabilizer Substances 0.000 description 7
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 7
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000012467 final product Substances 0.000 description 5
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- 239000004615 ingredient Substances 0.000 description 5
- 239000002923 metal particle Substances 0.000 description 5
- 229910052752 metalloid Inorganic materials 0.000 description 5
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 5
- AHHWIHXENZJRFG-UHFFFAOYSA-N oxetane Chemical compound C1COC1 AHHWIHXENZJRFG-UHFFFAOYSA-N 0.000 description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 4
- 229910000085 borane Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
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- 150000002118 epoxides Chemical class 0.000 description 4
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000011068 loading method Methods 0.000 description 4
- 150000002738 metalloids Chemical class 0.000 description 4
- 239000011236 particulate material Substances 0.000 description 4
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 4
- 239000004848 polyfunctional curative Substances 0.000 description 4
- 150000003335 secondary amines Chemical class 0.000 description 4
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 4
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical group CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 4
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 3
- DCQBZYNUSLHVJC-UHFFFAOYSA-N 3-triethoxysilylpropane-1-thiol Chemical compound CCO[Si](OCC)(OCC)CCCS DCQBZYNUSLHVJC-UHFFFAOYSA-N 0.000 description 3
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 3
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- PQVPWZHUJMEZSA-UHFFFAOYSA-N triethoxy(4-triethoxysilylbutyl)silane Chemical compound CCO[Si](OCC)(OCC)CCCC[Si](OCC)(OCC)OCC PQVPWZHUJMEZSA-UHFFFAOYSA-N 0.000 description 1
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- IBAMSHCJLNQXNI-UHFFFAOYSA-N trimethoxy-[3-[(3-methyloxetan-3-yl)methoxy]propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1(C)COC1 IBAMSHCJLNQXNI-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- ZQTYRTSKQFQYPQ-UHFFFAOYSA-N trisiloxane Chemical compound [SiH3]O[SiH2]O[SiH3] ZQTYRTSKQFQYPQ-UHFFFAOYSA-N 0.000 description 1
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- 150000003672 ureas Chemical class 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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Description
本明細書中で使用するように、単数形の「a」、「an」及び「the」は、文脈上他に明確に指示しない限り、複数の指示対象を含むことに留意されたい。本明細書で使用される場合、用語「含む」及び/又は「含む」は、記載された特徴、ステップ、操作、要素及び/又は構成要素の存在を特定するが、1つ以上の他の特徴、ステップ、動作、要素、構成要素、及び/又はそれらのグループの追加を排除しない。
SiR 1 a R 2 4−a を有する第1の化合物が提供され、
式中、
aは1〜3であり、
R 1 は反応性基であり、
R 2 はアルキル基又はアリール基である。
式中、
R 3 は架橋性官能基であり、
R 4 は反応性基であり、
R 5 はアルキル又はアリール基であり、
b=1〜2、c=1〜(4−b)である。
SiR 9 f R 10 g w
を有し、
式中、R 9 は反応性基であり、
f=1〜4であり、
R 10 はアルキル又はアリール基であり、g=4−fである。
式中、
aは1〜3であり、
R 1 は反応性基であり、
R 2 はアルキル基又はアリール基であり、
第2の化合物は、化学式SiR 3 b R 4 c R 5 4−(b+c) を有し、
式中、
R 3 は架橋性官能基であり、
R 4 は反応性基であり、
R 5 はアルキル又はアリール基であり、
b=1〜2、c=1〜(4−b)である。
式中、
R 9 は反応性基であり、
f=1〜4であり、
R 10 はアルキル又はアリール基であり、
g=4−fである。
式中、上述のように、
aは1〜3であり、bは1〜3であり、
R 1 は上記のような反応性基であり、
R 2 は、アルキル、アルケニル、アルキニル、アルコール、カルボン酸、ジカルボン酸、アリール、ポリアリール、多環式アルキル、ヘテロ環式脂肪族、ヘテロ環式芳香族基であり、
R 11 は独立してアルキル基又はアリール基であり、
又は1000g/mol未満の分子量を有するそのオリゴマーである。
R 5 3−(c+d) R 4 d R 3 c SiR 11 SiR 3 e R 4 f R 5 3−(e+f)
を有する化合物または1000g/mol未満の分子量を有するそれらのオリゴマーを上述したように、第1、第2及び第3の化合物又はこれらの任意の組み合わせと一緒に重合させ、
式中、
R 3 は架橋性官能基であり、
R 4 は反応性基であり、
R 5 はアルキル、アルケニル、アルキニル、アルコール、カルボン酸、ジカルボン酸、アリール、ポリアリール基、多環式アルキル、ヘテロ環式脂肪族、ヘテロ環式芳香族基であり、
R 12 は独立してアルキル基又はアリール基であり、
c=1〜2、d=1〜(3−c)、e=1〜2、f=1〜(3−e)である。
R 1 a R 2 b R 3 3−(a+b) Si−O−SiR 2 2 −O−SiR 1 a R 2 b R 3 3−(a+b)
を有するシロキサンモノマーを先に言及したシランと重合させるか、又は最終配合物に添加剤として添加し、
式中
R 1 は上で説明したような反応性基であり、
R 2 は、上で説明したようなアルキル又はアリールであり、
R 3 は上で説明したような架橋性官能基であり、
a=0〜3、b=0〜3である。
これらの化合物の例は、1,1,5,5−テトラメトキシ−1,5−ジメチル−3,3−ジフェニルトリシロキサン、1,1,5,5−テトラメトキシ−1,3,3,5−テトラフェニルトリシロキサン、1,1,5,5−テトラエトキシ−3,3−ジフェニルトリシロキサン、1,1,5,5−テトラメトキシ−1,5−ジビニル−3,3−ジフェニルトリシロキサン、1,1,5,5−テトラメトキシ−1,5−ジメチル−3,3−ジイソプロピルトリシロキサン、1,1,1,5,5,5−ヘキサメトキシ−3,3−ジフェニルトリシロキサン、1,5−ジメチル−1,5−ジエトキシ−3,3−ジフェニルトリシロキサン、1,5−ビス(メルカプトプロピル)−1,1,5,5−テトラメトキシ−3,3−ジフェニルトリシロキサン、1,5−ジビニル−1,1,5,5−テトラメトキシ−3−フェニル−3−メチルトリシロキサン、1,5−ジビニル−1,1,5,5−テトラメトキシ−3−シクロヘキシル−3−メチルトリシロキサン、1,1,7,7−テトラメトキシ−1,7−ジビニル−3,3,5,5−テトラメチルテトラシロキサン、1,1,5,5−テトラメトキシ−3,3−ジメチルトリシロキサン、1,1,7,7−テトラエトキシ−3,3,5,5−テトラメチルテトラシロキサン、1,1,5,5−テトラエトキシ−3,3−ジメチルトリシロキサン、1,1,5,5−テトラメトキシ−1,5−[2−(3,4−エポキシシクロヘキシル)エチル]−3,3−ジフェニルトリシロキサン、1,1,5,5−テトラメトキシ−1,5−(3−グリシドキシプロピル)−3、3−ジフェニルトリシロキサン、1,5−ジメチル−1,5−ジメトキシ−1,5−[2−(3,4−エポキシシクロヘキシル)エチル]−3,3−ジフェニルトリシロキサン、1,5−ジメチル−1,5−ジメトキシ−1,5−(3−グリシドキシプロピル)−3,3−ジフェニルトリシロキサンを挙げることができる。
R 1 a R 2 b SiR 3 4−(a+b)
を有するシラン化合物であってもよく、
式中、
R 1 はヒドロキシル、アルコキシ又はアセチルオキシのような反応性基であり、
R 2 はアルキル又はアリール基であり、
R 3 は、エポキシ、オキセタン、アルケニル、アクリレート又はアルキニル基のような架橋性化合物であり;
a=0〜1、b=0〜1である。
R 13 h R 14 i SiR 15 j
を有する任意のシランモノマーとすることができ、
式中、
R 13 は、ハロゲン、ヒドロキシル、アルコキシ、アセチル又はアセチルオキシのような反応性基であり、
R 14 はアルキル基又はアリール基であり、
R 15 は、エポキシ、無水物、シアノ、オキセタン、アミン、チオール、アリル、アルケニル又はアルキニルのような官能基であり;
h=0〜4、i=0〜4、j=0〜4、h+i+j=4である。
いくつかの場合、特に組成物が光学特性を必要とする装置に適用される場合、場合によっては最終硬化シロキサンが光学的吸収特性を有することが望ましいかもしれないが、材料は望ましくは可視スペクトル(又は最終装置が動作するスペクトル)の光に対して高透過性であるか、又は可視スペクトル(又は装置を動作させるスペクトル)の光に対して高反射性であることが望ましい。透明材料の例として、厚さ1〜50ミクロンの最終硬化層は、それに垂直に入射する可視光の少なくとも85%を透過するか、好ましくは少なくとも90%、より好ましくは少なくとも92.5%、最も好ましくは少なくとも95%透過する。反射層の一例として、最終硬化層は、その上に入射する光の少なくとも85%を反射することができ、好ましくはその上に90°の角度で入射する光の少なくとも95%を反射する。
撹拌棒及び還流冷却器を備えた500mL丸底フラスコに、ジフェニルシランジオール(60g、45mol%)、2−(3,4−エポキシシクロヘキシル)エチル]トリメトキシシラン(55.67g、36.7mol%)及びテトラメトキシシラン(17.20g、18.3mol%)を充填した。フラスコを窒素雰囲気下で80℃に加熱し、メタノール1mLに溶解した水酸化バリウム一水和物0.08gをシランの混合物に滴下した。ジフェニルシランジオールがアルコキシシランと反応した間、シラン混合物を80℃で30分間撹拌した。30分後、形成されたメタノールを真空下で蒸発させた。シロキサンポリマーは1000mPasの粘度及び1100のMwを有していた。
撹拌棒及び還流冷却器を備えた250mL丸底フラスコに、ジフェニルシランジオール(30g、45mol%)、2−(3,4−エポキシシクロヘキシル)エチル]トリメトキシシラン(28.1g、37mol%)及びジメチルジメトキシシラン(6.67g、18mol%)を充填した。フラスコを窒素雰囲気下で80℃に加熱し、メタノール1mLに溶解した水酸化バリウム一水和物0.035gをシランの混合物に滴下した。ジフェニルシランジオールがアルコキシシランと反応した間、シラン混合物を80℃で30分間撹拌した。30分後、形成されたメタノールを真空下で蒸発させた。シロキサンポリマーは2750mPasの粘度及び896のMwを有していた。
撹拌棒及び還流冷却器を備えた250mL丸底フラスコに、ジフェニルシランジオール(24.5g、50mol%)、2−(3,4−エポキシシクロヘキシル)エチル]トリメトキシシラン(18.64g、33.4mol%)及びテトラメトキシシラン(5.75g、16.7mol%)を充填した。フラスコを窒素雰囲気下で80℃に加熱し、メタノール1mLに溶解した水酸化バリウム一水和物0.026gをシランの混合物に滴下した。ジフェニルシランジオールがアルコキシシランと反応した間、シラン混合物を80℃で30分間撹拌した。30分後、形成されたメタノールを真空下で蒸発させた。このシロキサンポリマーは7313mPasの粘度及び1328のMwを有していた。
撹拌棒及び還流冷却器を備えた250mL丸底フラスコに、ジフェニルシランジオール(15g、50mol%)、2−(3,4−エポキシシクロヘキシル)エチル]トリメトキシシラン(13.29g、38.9mol%)及びビス(トリメトキシシリル)エタン(4.17g、11.1mol%)を充填した。フラスコを窒素雰囲気下で80℃に加熱し、メタノール1mLに溶解した水酸化バリウム一水和物0.0175gをシランの混合物に滴下した。ジフェニルシランジオールがアルコキシシランと反応した間、シラン混合物を80℃で30分間撹拌した。30分後、形成されたメタノールを真空下で蒸発させた。シロキサンポリマーは、1788mPasの粘度及び1590のMwを有していた。
撹拌棒及び還流冷却器を備えた250mL丸底フラスコに、ジフェニルシランジオール(15g、45mol%)、2−(3,4−エポキシシクロヘキシル)エチル]トリメトキシシラン(13.29g、35mol%)及びビニルトリメトキシシラン(4.57g、20mol%)を充填した。フラスコを窒素雰囲気下で80℃に加熱し、メタノール1mLに溶解した水酸化バリウム一水和物0.018gをシランの混合物に滴下した。ジフェニルシランジオールがアルコキシシランと反応した間、シラン混合物を80℃で30分間撹拌した。30分後、形成されたメタノールを真空下で蒸発させた。シロキサンポリマーは、1087mPas及び1004のMwの粘度を有していた。
撹拌棒及び還流冷却器を備えた250mL丸底フラスコに、ジイソプロピルシランジオール(20.05g、55.55mol%)、2−(3,4−エポキシシクロヘキシル)エチル]トリメトキシシラン(20.0g、33.33mol%)及びビス(トリメトキシシリル)エタン(7.3g、11.11mol%)を充填した。フラスコを窒素雰囲気下で80℃に加熱し、1mLのメタノールに溶解した0.025gの水酸化バリウム一水和物をシランの混合物に滴下した。ジフェニルシランジオールがアルコキシシランと反応した間、シラン混合物を80℃で30分間撹拌した。30分後、形成されたメタノールを真空下で蒸発させた。シロキサンポリマーは150mPasの粘度及び781のMwを有していた。
撹拌棒及び還流冷却器を備えた250mL丸底フラスコに、ジイソブチルシランジオール(18.6g、60mol%)及び2−(3,4−エポキシシクロヘキシル)エチル]トリメトキシシラン(17.32g、40mol%)を充填した。フラスコを窒素雰囲気下で80℃に加熱し、1mLのメタノールに溶解した0.019gの水酸化バリウム一水和物をシランの混合物に滴下した。ジフェニルシランジオールがアルコキシシランと反応した間、シラン混合物を80℃で30分間撹拌した。30分後、形成されたメタノールを真空下で蒸発させた。シロキサンポリマーは75mPasの粘度及び710のMwを有していた。
以下の組成物の例は、例示のために与えられたものであり、本発明を限定するものではない。
架橋性官能基としてエポキシを有するシロキサンポリマー(18.3g、18.3%)、平均サイズ(D50)が4マイクロメートルの銀フレーク(81g、81%)、3−メタクリル化プロピルトリメトキシシラン(0.5g、0.5%)及びKing Industries K−PURE CXC−1612熱酸発生剤(0.2%)を高せん断ミキサーを用いて混合した。この組成物は15000mPasの粘度を有する。
架橋性官能基としてエポキシを有するシロキサンポリマー(44.55g、44.45%)、平均サイズ(D50)が0.9μmマイクロメートルの酸化アルミニウム(53g、53%)、3−メタクリル化プロピルトリメトキシシラン(1g、1%)およびKing Industries K−PURE CXC−1612熱酸発生剤(0.45g、0.45%)を3本のロールミルを用いて一緒に混合した。組成物の粘度は20000mPasである。
架橋性官能基としてエポキシを有するシロキサンポリマー(60g、60%)、15μmの平均サイズ(D50)が15マイクロメートルの窒化ホウ素板状体(35g、35%)、Irganox 1173(1.3、1.3%)、2−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン(3.4g、3.4%)及びKing Industries K−PURE CXC−1612熱酸発生剤(0.3g、0.3%)を3本ロールミルを用いて混合した。組成物の粘度は25000mPasである。
官能基としてのメタクリレートを有するシロキサンポリマー(89g、89%)、Irganox 1173(2g、2%)及びイルガキュア 917光開始剤(4g、4%)を3本ロールミルを用いて混合した。組成物の粘度は25000mPasである。
ジフェニルシランジオール(20.0g、92mmol)、9−フェナントレニルトリメトキシシラン(16.6g、56mmol)、3−メタクリロキシプロピルトリメトキシシラン(9.2g、37mmol)及びメタノール中のBaO(25mg)100mLフラスコに入れ、1時間還流した。揮発性物質を減圧下で蒸発させた。透明なポリマー樹脂(37g)が得られた。
実施例X1に記載したように調製した、高屈折率を有するポリマー樹脂8.6gを、50%の固形分量を有する1,2−プロパンジオールモノメチルエーテルアセテート(PGMEA)中のZrO2ナノ粒子溶液5.7gとブレンドした。光開始剤0.26g(BASF製のDarocur 1173)、接着促進剤としてオリゴマー状の3−メタクリロキシプロピルトリメトキシシラン0.4g、及び界面活性剤(BYK Chemie製のBYK−307)20mgを溶液に添加した。
式中
i=1又は2、j=4−iであり、
R16は、熱又はUV光の適用によりシロキサンポリマーと架橋する架橋性官能基であり、
Arはアリール基であり、
R1は、ヒドロキシル、ハロゲン、アルコキシ、カルボキシル、アミン又はアシルオキシ基等の反応性基である。
12,13 窒化ガリウム領域
10,10a,10b 電極
16 SiC又はCu基板
17 接着層
19 支持基板又はパッケージ基板
24 ダイ
20 パッケージ基板
22 接着剤を付着させる
25 ワイヤボンド
28 蛍光体層
29 封入剤層
30 パッケージ基板
32 ダイ
34 結合層
35 蛍光体材料
37 カプセル化層
40 透明基板
41 半導体材料
42 基板
46 シロキサン粒子接着剤
47,48 電気接続領域
48 電気接続領域
49 シロキサン材料
45 ワイヤボンド45
43 接着剤
44 パッケージ/支持基板
51 ダイ
52 カバー基板
53 封入剤
55 コンフォーマル層
Claims (15)
- LEDランプであって、
ダイ基板と、
ダイ基板の上に形成された半導体材料と、
半導体材料に光を放出させるためのバイアスを印加するための電極と、
ダイ基板を支持基板に結合する接着剤と
を備え、
前記接着剤は、0.1W/(m・K)より大きい熱伝導率を有する重合シロキサンポリマーであり、前記重合シロキサンポリマーは、そのポリマー骨格中にケイ素及び酸素ならびにそれに結合したアリール基を有し、前記接着剤は、10ミクロン未満の平均粒子径を有する粒子をさらに含み、
前記粒子が、周期表の第8族〜第11族から選択される後期遷移金属を含み、
前記接着剤は、光吸収性ではなく、その上に入射する可視光の少なくとも80%を透過又は反射し、
前記重合シロキサンポリマーは、少なくとも第1の化合物、第2の化合物および第4の化合物の重合生成物であり、
前記第1の化合物が、化学式:
SiR 1 a R 2 4−a
を有し、
式中、
aは、1〜3であり、
R 1 は、反応性基であり、
R 2 は、アルキル基またはアリール基であり;
前記第2の化合物が、化学式:
SiR 3 b R 4 c R 5 4−(b+c)
を有し、
式中、
R 3 は、架橋性官能基であり、
R 4 は、反応性基であり、
R 5 は、アルキル基またはアリール基であり;
b=1〜2、c=1〜(4−b)であり、
前記第4の化合物が、化学式:
R 2 3−a R 1 a SiR 11 SiR 1 b R 2 3−b
を有し、
式中、
aは、1〜3であり、
bは、1〜3であり、
R 1 は、反応性基であり、
R 2 は、アルキル基またはアリール基であり、
R 11 は、アルキル基またはアリール基である、
ただし、前記第1の化合物、第2の化合物および第4の化合物のうち、少なくとも1つは、アリール基を有する、LEDランプ。 - 前記ダイ基板は、より大きなウエハから切断されたダイ部分であり、サファイア、SiC、Cu、GaN及びSiから選択される、請求項1に記載のLEDランプ。
- 前記ダイ基板は、提供された前記ダイの厚さにおいて、前記ダイ基板に垂直に入射する前記可視領域の光の少なくとも85%を透過する材料を有する可視光に対して透過性であり、前記ダイ基板がサファイアである、請求項1又は2に記載のLEDランプ。
- 前記ダイ基板は、導電性基板または半導体基板である、請求項1または2に記載のLEDランプ。
- 前記接着剤は、光学的に透過性であり、それに垂直に入射する前記可視光の80%以上を透過する、請求項1〜4のいずれか一項に記載のLEDランプ。
- 前記接着剤は、90度の角度で入射する前記光の少なくとも80%を反射する光反射層である、請求項1〜4のいずれか一項に記載のLEDランプ。
- 前記後期遷移金属が、金、銀、銅、白金、パラジウム、鉄、ニッケルおよびコバルトから選択される、請求項1〜6のいずれか一項に記載のLEDランプ。
- 前記接着剤の熱伝導率が、0.2W/(m・K)より大きい、請求項1〜7のいずれか一項に記載のLEDランプ。
- 前記接着剤が熱的に安定であり、それによって少なくとも200℃に加熱された場合、前記接着剤は2%未満の質量損失を有する、請求項1〜8のいずれか一項に記載のLEDランプ。
- 前記粒子が酸化物粒子である、請求項1〜9のいずれか一項に記載のLEDランプ。
- 前記酸化物粒子が、ニッケル、ニッケルコバルト、鉄、銅またはコバルトアルミニウムの酸化物である、請求項10に記載のLEDランプ。
- 前記粒子が、窒化銅および窒化鉄から選択される窒化物粒子である、請求項1〜9のいずれか一項に記載のLEDランプ。
- LEDランプを製造する方法であって、
第1の基板上に半導体材料を提供し、前記半導体材料をドーピングすることによって発光ダイオードを形成することと、
支持基板を提供することと、
ポリマー骨格中にケイ素及び酸素ならびにそれに結合したアリール基ならびにそれに結合した架橋性官能基を有するシロキサンポリマーを含む接着剤組成物を提供することであって、前記接着剤組成物は、10ミクロン未満の平均粒子径を有する粒子と、触媒とをさらに含み、前記粒子が周期表の第8族〜第11族から選択される後期遷移金属を含み、
前記シロキサンポリマーは、少なくとも第1の化合物、第2の化合物および第4の化合物の重合生成物であり、
前記第1の化合物が、化学式:
SiR 1 a R 2 4−a
を有し、
式中、
aは、1〜3であり、
R 1 は、反応性基であり、
R 2 は、アルキル基またはアリール基であり;
前記第2の化合物が、化学式:
SiR 3 b R 4 c R 5 4−(b+c)
を有し、
式中、
R 3 は、架橋性官能基であり、
R 4 は、反応性基であり、
R 5 は、アルキル基またはアリール基であり;
b=1〜2、c=1〜(4−b)であり、
前記第4の化合物が、化学式:
R 2 3−a R 1 a SiR 11 SiR 1 b R 2 3−b
を有し、
式中、
aは、1〜3であり、
bは、1〜3であり、
R 1 は、反応性基であり、
R 2 は、アルキル基またはアリール基であり、
R 11 は、アルキル基またはアリール基であり、
ただし、前記第1の化合物、第2の化合物および第4の化合物のうち、少なくとも1つは、アリール基を有する;
前記接着剤組成物を堆積させて、前記第1の基板を前記支持基板に接着することと、
前記シロキサンポリマーをさらに重合させ、前記シロキサンポリマーを硬化させ、同時に前記第1の基板及び支持基板を一緒に接着させるために、温度及び/又は光を適用し、前記シロキサンポリマーの架橋性官能基を活性化させることと
を含み、
重合および硬化したシロキサンポリマーは、重合前と比較して重合後に少なくとも96%の質量を有し、
前記シロキサンポリマーは、その上に入射する可視光の25%より多くを吸収しない、方法。 - 熱伝導率が0.1W/(m・K)より大きい、請求項13に記載の方法。
- 前記後期遷移金属が、金、銀、銅、白金、パラジウム、鉄、ニッケルおよびコバルトから選択される、請求項13または14に記載の方法。
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