JP2017527126A - シロキサン材料を用いたledランプ - Google Patents
シロキサン材料を用いたledランプ Download PDFInfo
- Publication number
- JP2017527126A JP2017527126A JP2017518606A JP2017518606A JP2017527126A JP 2017527126 A JP2017527126 A JP 2017527126A JP 2017518606 A JP2017518606 A JP 2017518606A JP 2017518606 A JP2017518606 A JP 2017518606A JP 2017527126 A JP2017527126 A JP 2017527126A
- Authority
- JP
- Japan
- Prior art keywords
- particles
- led lamp
- adhesive
- nitride
- siloxane polymer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 title claims abstract description 158
- 239000000463 material Substances 0.000 title claims abstract description 101
- 239000002245 particle Substances 0.000 claims abstract description 186
- 229920000642 polymer Polymers 0.000 claims abstract description 120
- 239000000758 substrate Substances 0.000 claims abstract description 89
- 239000000853 adhesive Substances 0.000 claims abstract description 67
- 230000001070 adhesive effect Effects 0.000 claims abstract description 67
- 125000003118 aryl group Chemical group 0.000 claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims description 86
- 238000000034 method Methods 0.000 claims description 75
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 46
- 238000006116 polymerization reaction Methods 0.000 claims description 39
- -1 copper nitride Chemical class 0.000 claims description 37
- 238000004132 cross linking Methods 0.000 claims description 28
- 229910002601 GaN Inorganic materials 0.000 claims description 24
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 24
- 239000003795 chemical substances by application Substances 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 22
- 239000003054 catalyst Substances 0.000 claims description 20
- 239000002904 solvent Substances 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 239000008393 encapsulating agent Substances 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 125000000524 functional group Chemical group 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052709 silver Inorganic materials 0.000 claims description 14
- 239000004332 silver Substances 0.000 claims description 14
- 239000002923 metal particle Substances 0.000 claims description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 150000004767 nitrides Chemical group 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 229910052582 BN Inorganic materials 0.000 claims description 7
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000002105 nanoparticle Substances 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052711 selenium Inorganic materials 0.000 claims description 5
- 239000011669 selenium Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 229910052723 transition metal Inorganic materials 0.000 claims description 5
- 150000003624 transition metals Chemical class 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical group [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 3
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims description 3
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 claims description 3
- BLJNPOIVYYWHMA-UHFFFAOYSA-N alumane;cobalt Chemical compound [AlH3].[Co] BLJNPOIVYYWHMA-UHFFFAOYSA-N 0.000 claims description 3
- 150000004645 aluminates Chemical group 0.000 claims description 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 3
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052792 caesium Inorganic materials 0.000 claims description 3
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 239000011575 calcium Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910001337 iron nitride Inorganic materials 0.000 claims description 3
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 3
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 230000000379 polymerizing effect Effects 0.000 claims description 3
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 239000011345 viscous material Substances 0.000 claims description 3
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 3
- 238000007765 extrusion coating Methods 0.000 claims description 2
- 230000002441 reversible effect Effects 0.000 claims description 2
- 229920001187 thermosetting polymer Polymers 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims 2
- 230000000737 periodic effect Effects 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- 150000002602 lanthanoids Chemical class 0.000 claims 1
- 239000011343 solid material Substances 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 description 74
- 239000010410 layer Substances 0.000 description 68
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 51
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 20
- 239000000945 filler Substances 0.000 description 20
- 229910000077 silane Inorganic materials 0.000 description 20
- 125000003342 alkenyl group Chemical group 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 150000001412 amines Chemical class 0.000 description 15
- 239000004593 Epoxy Substances 0.000 description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 14
- 239000002253 acid Substances 0.000 description 14
- 125000000304 alkynyl group Chemical group 0.000 description 14
- OLLFKUHHDPMQFR-UHFFFAOYSA-N dihydroxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](O)(O)C1=CC=CC=C1 OLLFKUHHDPMQFR-UHFFFAOYSA-N 0.000 description 14
- 125000003545 alkoxy group Chemical group 0.000 description 13
- 239000007822 coupling agent Substances 0.000 description 13
- 238000010992 reflux Methods 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 10
- 229910010271 silicon carbide Inorganic materials 0.000 description 10
- 238000001429 visible spectrum Methods 0.000 description 10
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 9
- 239000000047 product Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 239000000654 additive Substances 0.000 description 8
- 125000004432 carbon atom Chemical group C* 0.000 description 8
- ZLDHYRXZZNDOKU-UHFFFAOYSA-N n,n-diethyl-3-trimethoxysilylpropan-1-amine Chemical compound CCN(CC)CCC[Si](OC)(OC)OC ZLDHYRXZZNDOKU-UHFFFAOYSA-N 0.000 description 8
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 8
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000002318 adhesion promoter Substances 0.000 description 7
- 239000003963 antioxidant agent Substances 0.000 description 7
- 235000006708 antioxidants Nutrition 0.000 description 7
- 229910052736 halogen Inorganic materials 0.000 description 7
- 150000002367 halogens Chemical class 0.000 description 7
- 229910052752 metalloid Inorganic materials 0.000 description 7
- 239000000178 monomer Substances 0.000 description 7
- 239000012299 nitrogen atmosphere Substances 0.000 description 7
- 239000011236 particulate material Substances 0.000 description 7
- 150000002989 phenols Chemical class 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 239000003381 stabilizer Substances 0.000 description 7
- 238000003756 stirring Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 125000001424 substituent group Chemical group 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 150000002738 metalloids Chemical class 0.000 description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 229910000085 borane Inorganic materials 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- AHHWIHXENZJRFG-UHFFFAOYSA-N oxetane Chemical compound C1COC1 AHHWIHXENZJRFG-UHFFFAOYSA-N 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 4
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 150000002118 epoxides Chemical class 0.000 description 4
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 4
- 239000013020 final formulation Substances 0.000 description 4
- 239000012467 final product Substances 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 4
- 150000003141 primary amines Chemical class 0.000 description 4
- 150000003335 secondary amines Chemical class 0.000 description 4
- 150000004756 silanes Chemical class 0.000 description 4
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 4
- 150000003573 thiols Chemical class 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 3
- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical group OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 229910018540 Si C Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 125000004423 acyloxy group Chemical group 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000002071 nanotube Substances 0.000 description 3
- 239000002070 nanowire Substances 0.000 description 3
- 125000005375 organosiloxane group Chemical group 0.000 description 3
- 150000002978 peroxides Chemical class 0.000 description 3
- 239000002952 polymeric resin Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000002096 quantum dot Substances 0.000 description 3
- 150000003254 radicals Chemical class 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 3
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical group CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 3
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- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 1
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- SHMLZNJGRQRUSC-UHFFFAOYSA-N oxetane-2-carbonitrile Chemical compound N#CC1CCO1 SHMLZNJGRQRUSC-UHFFFAOYSA-N 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 description 1
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- 239000001294 propane Substances 0.000 description 1
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- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical compound [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
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- 238000007725 thermal activation Methods 0.000 description 1
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- PYOKTQVLKOAHRM-UHFFFAOYSA-N triethoxy(3-triethoxysilylpropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC[Si](OCC)(OCC)OCC PYOKTQVLKOAHRM-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- YRGWVXZQBQENQJ-UHFFFAOYSA-N triethoxy(phenanthren-1-yl)silane Chemical compound C1=CC2=CC=CC=C2C2=C1C([Si](OCC)(OCC)OCC)=CC=C2 YRGWVXZQBQENQJ-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- RYINGNAZWSKAII-UHFFFAOYSA-N triethoxy-[3-(1h-imidazol-2-yl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCC1=NC=CN1 RYINGNAZWSKAII-UHFFFAOYSA-N 0.000 description 1
- VTHOKNTVYKTUPI-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyltetrasulfanyl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCSSSSCCC[Si](OCC)(OCC)OCC VTHOKNTVYKTUPI-UHFFFAOYSA-N 0.000 description 1
- GAMLUOSQYHLFCT-UHFFFAOYSA-N triethoxy-[3-[(3-ethyloxetan-3-yl)methoxy]propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1(CC)COC1 GAMLUOSQYHLFCT-UHFFFAOYSA-N 0.000 description 1
- VQTPBGMQDVXUBG-UHFFFAOYSA-N triethoxy-[3-[(3-methyloxetan-3-yl)methoxy]propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1(C)COC1 VQTPBGMQDVXUBG-UHFFFAOYSA-N 0.000 description 1
- 150000004684 trihydrates Chemical class 0.000 description 1
- OKMFHWDLPIWPOX-UHFFFAOYSA-N trimethoxy(1-trimethoxysilylpropan-2-yl)silane Chemical compound CO[Si](OC)(OC)CC(C)[Si](OC)(OC)OC OKMFHWDLPIWPOX-UHFFFAOYSA-N 0.000 description 1
- JPMBLOQPQSYOMC-UHFFFAOYSA-N trimethoxy(3-methoxypropyl)silane Chemical compound COCCC[Si](OC)(OC)OC JPMBLOQPQSYOMC-UHFFFAOYSA-N 0.000 description 1
- LQASLKRKZDJCBO-UHFFFAOYSA-N trimethoxy(3-trimethoxysilylpropyl)silane Chemical compound CO[Si](OC)(OC)CCC[Si](OC)(OC)OC LQASLKRKZDJCBO-UHFFFAOYSA-N 0.000 description 1
- OTRIBZPALGOVNZ-UHFFFAOYSA-N trimethoxy(4-trimethoxysilylbutyl)silane Chemical compound CO[Si](OC)(OC)CCCC[Si](OC)(OC)OC OTRIBZPALGOVNZ-UHFFFAOYSA-N 0.000 description 1
- MAFPECYMNWKRHR-UHFFFAOYSA-N trimethoxy(5-trimethoxysilylpentyl)silane Chemical compound CO[Si](OC)(OC)CCCCC[Si](OC)(OC)OC MAFPECYMNWKRHR-UHFFFAOYSA-N 0.000 description 1
- BHZKBFGLZZRETK-UHFFFAOYSA-N trimethoxy(phenanthren-9-yl)silane Chemical compound C1=CC=C2C([Si](OC)(OC)OC)=CC3=CC=CC=C3C2=C1 BHZKBFGLZZRETK-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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Abstract
Description
本明細書中で使用される場合、「a」、「an」及び「the」の単数形は、文脈上他に明確に指示されない限り、複数の指示対象を含むことに留意されたい。本明細書で使用される場合、用語「含む(comprises)」及び/又は「含む(comprising)」は、記載された特徴、ステップ、操作、要素及び/又は構成要素の存在を特定するが、ステップ、動作、要素、コンポーネント、及び/又はそれらのグループを含むが、それらに限定されない。
SiR1aR24−a
ここで
aは1〜3であり、
R1は反応性基であり、
R2はアルキル基又はアリール基である。
SiR3bR4cR54−(b+c)
ここで
R3は架橋官能基であり、
R4は反応性基であり、
R5はアルキル又はアリール基であり、
b=1〜2、c=1〜(4−b)である。
SiR9fR10gw
ここで
R9は反応性基であり、
f=1〜4であり、
R10はアルキル又はアリール基であり、g=4−fである。
SiR1aR24−a
ここで
aは1〜3であり、
R1は反応性基であり、
R2はアルキル基又はアリール基であり、
第2の化合物は、化学式
SiR3bR4cR54−(b+c)
ここで
R3は架橋官能基であり、
R4は反応性基であり、
R5はアルキル又はアリール基であり、そして
b=1〜2、c=1〜(4−b)である。
SiR9fR10g
ここで
R9は反応性基であり、
f=1〜4、及び
R10はアルキル又はアリール基であり、
g=4−fである。
R23−aR1aSiR11SiR1bR23−b
ここで
aは1〜3であり、bは1〜3であり、
R1は上記のような反応基であり、
R2は、アルキル、アルケニル、アルキニル、アルコール、カルボン酸、ジカルボン酸、アリール、ポリアリール、多環式アルキル、ヘテロ環式脂肪族、ヘテロ環式芳香族基であり、
R11は独立してアルキル基又はアリール基であり、
又は1000g/mol未満の分子量を有するそのオリゴマー;
上述したように、第1、第2及び第3の化合物又はこれらの任意の組み合わせと一緒に重合させることができる。
R53−(c+d)R4dR3cSiR11SiR3eR4fR53−(e+f)
ここで
R3は架橋官能基であり、
R4は反応性基であり、
アリール基、ポリアリール基、多環式アルキル基、ヘテロ環式脂肪族基、ヘテロ環式芳香族基、複素環式芳香族基、複素環式芳香族基、
R12は独立してアルキル基又はアリール基であり、
c=1〜2、d=1〜(3−c)、e=1〜2、f=1〜(3−e)
又は1000g/mol未満の分子量を有するそのオリゴマー;
本明細書に記載の第1、第2、第3の化合物、又はこれらの任意の組み合わせと一緒に重合される。
これらの化合物の例は、1,1,5,5−テトラメトキシ−1,5−ジメチル−3,3−ジフェニルトリシロキサン、1,1,5,5−テトラメトキシ−1,3,3,5−テトラフェニルトリシロキサン、1,1、5,5−テトラエトキシ−3,3−ジフェニルトリシロキサン、1,1,5,5−テトラメトキシ−1,5−ジビニル−3,3−ジフェニルトリシロキサン、1,1,5,5−テトラメトキシ−1,5−ジメチル−3,3−ジイソプロピルトリシロキサン、1,1,1,5,5,5−ヘキサメトキシ−3,3−ジフェニルトリシロキサン、1,5−ジメチル−1,5−ジエトキシ−3,3−ジフェニルトリシロキサン、1,5−ビス(メルカプトプロピル)−1,1,5,5−テトラメトキシ−3,3−ジフェニルトリシロキサン、1,5−ジビニル−1,1,5,5−テトラメトキシ−3−フェニル−3−メチルトリシロキサン、1,5−ジビニル−1,3,5−トリメチル−1,1,5,5−テトラメトキシ−3−シクロヘキシル−3−メチルトリシロキサン、1,1,7,7−テトラメトキシ−1,7−ジビニル−3,3,5,5−テトラメチルテトラシロキサン、1,1,7,7−テトラエトキシ−3,3,5,5−テトラメチルテトラシロキサン、1,1,5,5−テトラエトキシ−3,3−ジメチルトリシロキサン、1,1,1,2−テトラエトキシ−3,3−ジメチルトリシロキサン、5,5−テトラメトキシ−1,5−[2−(3,4−エポキシシクロヘキシル)エチル]−3,3−ジフェニルトリシロキサン、1,1,5,5−テトラメトキシ−1,5−(3−グリシドキシプロピル)−3、3−ジフェニルトリシロキサン、1,5−ジメチル−1,5−ジメトキシ−1,5−[2−(3,4−エポキシシクロヘキシル)エチル]−3,3−ジフェニルトリシロキサン、1,5−ジメチル−1,5−1,5−(3−グリシドキシプロピル)−3,3−ジフェニルトリシロキサンを挙げることができる。
R1aR2bSiR34−(a+b)
ここで
R1はヒドロキシル、アルコキシ又はアセチルオキシのような反応性基であり、
R2はアルキル又はアリール基であり、
R3は、エポキシ、オキセタン、アルケニル、アクリレート又はアルキニル基のような架橋化合物であり;
a=0〜1、b=0〜1である。
R13hR14iSiR15j
ここで
R13は、ハロゲン、ヒドロキシル、アルコキシ、アセチル又はアセチルオキシのような反応性基であり、
R14はアルキル基又はアリール基であり、
R15は、エポキシ、無水物、シアノ、オキセタン、アミン、チオール、アリル、アルケニル又はアルキニルのような官能基であり;
h=0〜4、I=0〜4、j=0〜4、h+i+j=4である。
以下の組成物の例は、例示のために与えられたものであり、本発明を限定するものではない。
R16Ar)iSiR1j
ここで
i=1又は2、及びj=4−Iであり、
R16は、熱又はUV光の照射によりシロキサンポリマーと架橋する官能性架橋基であり、
Arはアリール基であり、
R1は、ヒドロキシル、ハロゲン、アルコキシ、カルボキシル、アミン又はアシルオキシ基等の反応性基である。
12,13 窒化ガリウム領域
10,10a,10b 電極
16 SiC又はCu基板
17 接着層
19 支持体又はパッケージ基板
24 ダイ
20 パッケージ基板
22 接着剤を付着させる
25 本のワイヤボンド
28 蛍光体層
29 封止層
30 パッケージ基板
32 ダイ
34 結合層
35 蛍光体材料
37 カプセル化層
40 透明基板
41 半導体材料
42 基板
46 シロキサン粒子接着剤
47,48 電気接続領域
48 電気接続領域
49 シロキサン材料
45 ワイヤボンド45
43 接着剤
44 パッケージ/支持基板
51 ダイ
52 カバー基板
53 封入剤
55 コンフォーマル層
Claims (95)
- LEDランプであって、
ダイ基板と、
その上に形成された半導体材料と、
半導体材料を横切って光を放出させるためのバイアスを印加するための電極と、
ダイ基板を支持基板に接着する接着剤と
を備え、
前記接着剤は、0.1W/(m・K)より大きい熱伝導率を有する重合シロキサンポリマーであり、前記シロキサンポリマーは、前記ポリマー骨格中にケイ素及び酸素を有し、前記接着剤は、100ミクロン未満の平均粒子径を有する粒子をさらに含み、
前記接着剤は、光吸収性ではなく、その上に入射する可視光の少なくとも80%を透過又は反射する、LEDランプ。 - 前記ダイ基板は、より大きなウエハから切断されたダイ部分であり、サファイア、SiC、Cu、GaN及びSiから選択される、請求項1に記載のLEDランプ。
- 前記ダイ基板は、提供された前記ダイの厚さにおいて、前記ダイ基板に垂直に入射する前記可視領域の光の少なくとも85%を透過する材料を有する可視光に対して透過性である、請求項1又は2に記載のLEDランプ。
- 前記基板がサファイアである、請求項1〜3のいずれか一項に記載のLEDランプ。
- 前記基板は、導電性基板である、請求項1〜4のいずれか一項に記載のLEDランプ。
- 前記基板は半導体基板である、請求項1〜5のいずれか一項に記載のLEDランプ。
- 前記半導体が、nドープ領域及びpドープ領域を有するGaNを含む、請求項1〜6のいずれか一項に記載のLEDランプ。
- 前記接着剤は、光学的に透過性であり、それに垂直に入射する前記可視光の80%以上を透過する、請求項1〜7のいずれか一項に記載のLEDランプ。
- 前記シロキサンポリマーが、前記シロキサン主鎖中のケイ素に結合したアリール基を含む、請求項1〜8のいずれか一項に記載のLEDランプ。
- 前記接着剤は、90度の角度で入射する前記光の少なくとも80%を反射する光反射層である、請求項1〜9のいずれか一項に記載のLEDランプ。
- 前記接着剤は、90度の角度で入射する前記光の少なくとも90%を反射する光反射層である、請求項1〜10のいずれか一項に記載のLEDランプ。
- 前記接着剤中の前記粒子が金属粒子である、請求項1〜11のいずれか一項に記載のLEDランプ。
- 前記金属粒子が、金、銀、銅、白金、パラジウム、インジウム、鉄、ニッケル、アルミニウム、コバルト、ストロンチウム、亜鉛、モリブデン、チタン、タングステンから選択される、請求項1〜12のいずれか一項に記載のLEDランプ。
- 前記接着剤の熱伝導率が、0.2W/(m・K)より大きい、請求項1〜13のいずれか一項に記載のLEDランプ。
- 前記接着剤の前記熱伝導率は、0.5W/(m・K)よりも大きい、請求項1〜14のいずれか一項に記載のLEDランプ。
- 前記接着剤の熱伝導率が、1.0W/(m・K)より大きい、請求項1〜15のいずれか一項に記載のLEDランプ。
- 前記シロキサンポリマーがアリール基を含み、前記粒子が、周期律表の第8族〜第11族から選択される後期遷移金属を含み、10ミクロン未満の平均粒子径を有する、請求項1〜16のいずれか一項に記載のLEDランプ。
- 前記接着剤が熱的に安定であり、それによって少なくとも200℃に加熱された場合、前記接着剤は2%未満の質量損失を有する、請求項1〜17のいずれか一項に記載のLEDランプ。
- 前記接着剤が熱的に安定であり、それにより少なくとも300℃に加熱された場合、それは2%未満の質量損失を有する、請求項1〜18のいずれか一項に記載のLEDランプ。
- 前記接着剤が熱的に安定であり、それにより少なくとも200℃に加熱された場合、それは1%未満の質量損失を有する、請求項1〜19のいずれか一項に記載のLEDランプ。
- 前記接着剤が、1.4〜1.6の屈折率を有する、請求項1〜20のいずれか一項に記載のLEDランプ。
- 前記接着剤が、1.58〜2.0の屈折率を有する、請求項1〜21のいずれか一項に記載のLEDランプ。
- 前記接着剤が、1.6〜1.85の屈折率を有する、請求項1〜22のいずれか一項に記載のLEDランプ。
- 前記接着剤は、光学的に透過性であり、それに垂直に入射する前記可視光の90%又はそれ以上を透過する、請求項1〜23のいずれか一項に記載のLEDランプ。
- 前記接着剤内に蛍光体をさらに含む、請求項1〜24のいずれか一項に記載のLEDランプ。
- 前記粒子は、前記発光ダイオードが発光する波長よりも小さい平均粒子サイズを有する、請求項1〜25のいずれか一項に記載のLEDランプ。
- 前記粒子が酸化物粒子である、請求項1〜26のいずれか一項に記載のLEDランプ。
- 前記粒子が、前記LEDによって放射される光の波長よりも小さい、請求項1〜27のいずれか一項に記載のLEDランプ。
- 前記蛍光体は、YAG:Ce蛍光体である、請求項1〜28のいずれか一項に記載のLEDランプ。
- 前記蛍光体は、窒化物蛍光体である、請求項1〜29のいずれか一項に記載のLEDランプ。
- 前記酸化物粒子が、ケイ素、亜鉛、アルミニウム、イットリウム、イッテルビウム、タングステン、チタンシリコン、チタン、アンチモン、サマリウム、ニッケル、ニッケルコバルト、モリブデン、マグネシウムの酸化物である、請求項1〜マンガン、ランタニド、鉄、インジウムスズ、銅、コバルトアルミニウム、クロム、セシウム又はカルシウムである、請求項1〜30のいずれか一項に記載のLEDランプ。
- 前記酸化物粒子が、チタン、タンタル、アルミニウム、ジルコニウム、ハフニウム又はセレンの酸化物である、請求項1〜31のいずれか一項に記載のLEDランプ。
- 前記粒子が、窒化アルミニウム、窒化タンタル、窒化ホウ素、窒化チタン、窒化銅、窒化モリブデン、窒化タングステン、窒化鉄、窒化ケイ素、窒化インジウム、窒化ケイ素、窒化ガリウム、及び窒化炭素から選択される窒化物粒子である、請求項1〜32のいずれか一項に記載のLEDランプ。
- 前記蛍光体がケイ酸塩蛍光体である、請求項1〜33のいずれか一項に記載のLEDランプ。
- 前記蛍光体がアルミン酸塩蛍光体である、請求項1〜34のいずれか一項に記載のLEDランプ。
- 前記粒子が、酸化チタン、酸化アルミニウム、窒化アルミニウム又は窒化ホウ素を含む、請求項1〜35のいずれか一項に記載のLEDランプ。
- LEDランプを製造する方法であって、
第1の基板上に半導体材料を供給し、前記半導体材料をドーピングすることによって発光ダイオードを形成するステップと、
支持基板を準備するステップと、
ポリマー主鎖中にケイ素及び酸素を有するシロキサンポリマーならびにそれに結合したアリール基又はアルキル基を含む接着剤組成物及びそれに結合した官能性架橋基を含む接着剤組成物であって、100ミクロン未満の粒子と、触媒と、
第1の基板を支持基板に接着するように接着剤組成物を付着させるステップと、
シロキサンポリマーの架橋基を活性化させ、シロキサンポリマーをさらに重合させ、ポリマーを硬化させ、同時にダイ及びパッケージ基板を一緒に接着させるために、温度及び/又は光を適用するステップと
を含み、
前記重合され硬化されたシロキサンポリマーは、重合前と比較して重合後に少なくとも96%の質量を有し、
シロキサンポリマーは、その上に入射する可視光の25%より多くを吸収しない、方法。 - 熱伝導率が0.1W/(m・K)より大きい、請求項37に記載の方法。
- 熱伝導率が0.2W/(m・K)より大きい、請求項37又は38に記載の方法。
- 熱伝導率が0.5W/(m・K)より大きい、請求項37〜39のいずれか一項に記載の方法。
- 前記重合され硬化されたシロキサンポリマーが、1×10−3Ω・m未満の電気抵抗率を有する、請求項37〜40のいずれか一項に記載の方法。
- 重合され硬化されたシロキサンポリマーが、1×10−5Ω・m未満の電気抵抗率を有する、請求項37〜41のいずれか一項に記載の方法。
- 前記重合され硬化されたシロキサンポリマーが、1×10−7Ω・m未満の電気抵抗率を有する、請求項37〜42のいずれか一項に記載の方法。
- 前記重合硬化したシロキサンポリマーが、1×10 3Ω・m以上の電気抵抗率を有する、請求項37〜43のいずれか一項に記載の方法。
- 重合され硬化されたシロキサンポリマーが1×10 5Ω・mより大きい電気抵抗率を有する、請求項37〜44のいずれか一項に記載の方法。
- 重合され硬化されたシロキサンポリマーが、1×10 9Ω・m以上の電気抵抗率を有する、請求項37〜45のいずれか一項に記載の方法。
- 前記接着剤中の前記粒子が金属粒子であり、前記接着材料が、その上に入射する可視光の少なくとも25%を反射する反射層である、請求項37〜46のいずれか一項に記載の方法。
- 金属粒子が、金、銀、銅、白金、パラジウム、インジウム、鉄、ニッケル、アルミニウム、コバルト、ストロンチウム、亜鉛、モリブデン、チタン、タングステンから選択される、請求項37〜47のいずれか一項に記載の方法。
- 前記金属粒子が、銀の外層を有する多層粒子である、請求項37〜48のいずれか一項に記載の方法。
- 前記接着剤組成物中の金属粒子が、第1及び第2の平均粒子サイズを有し、第1の粒子グループが1ミクロンより大きい平均粒子サイズを有し、第2の粒子グループ平均粒子径が25nm未満である、請求項37〜49のいずれか一項に記載の方法。
- 前記第2の粒子群の粒子が、前記触媒及び前記官能性架橋基が反応する温度より低い温度で溶融して粘性材料から固体材料へ前記シロキサン材料を硬化させる、請求項37〜50のいずれか一項に記載の方法。
- 第2の粒子群の粒子を溶融させるために、第1のより低い温度が適用され、続いて第2のより高い温度が適用されて、第2の粒子群の架橋官能基が活性化される、請求項37〜51のいずれか一項に記載の方法。シロキサン材料。
- 熱及び/又は光の付与前の接着剤が、5rpm粘度計で25℃で1000〜75,000mPa・secの粘度を有し、かつ溶媒が添加されていない状態である、請求項37〜52のいずれか一項に記載の方法。
- 5000〜50000mPa・secの粘度を有する、請求項37〜53のいずれか一項に記載の方法。
- 前記シロキサンポリマーが、熱及び/又は光を加える前に約500〜5,000g/molの分子量を有する、請求項37〜54のいずれか一項に記載の方法。
- シロキサンポリマーが約700〜1500g/molの分子量を有する、請求項37〜55のいずれか一項に記載の方法。
- シロキサンポリマーがアリール基を含み、粒子が周期律表の第8族〜第11族から選択される後期遷移金属を含み、10ミクロン未満の平均粒子径を有する、請求項37〜56のいずれか一項に記載の方法。
- 前記粒子の外層が銀を含み、前記粒子の内層が銅を含む、請求項37〜57のいずれか一項に記載の方法。
- 前記第1の温度及び前記第2の温度の両方が175℃未満である、請求項37〜58のいずれか一項に記載の方法。
- 前記第1粒子群が銀被覆銅粒子であり、前記第2粒子群が15nm未満の平均粒子サイズを有する銀粒子である、請求項37〜59のいずれか一項に記載の方法。
- シロキサンポリマーを硬化させるために熱が加えられ、適用される温度が50℃〜200℃である、請求項37〜60のいずれか一項に記載の方法。
- 温度が150℃未満である、請求項37〜61のいずれか一項に記載の方法。
- 前記ダイは、前記ダイ上に形成された回路を前記パッケージ基板に向けて形成してフリップチップパッケージを形成し、前記パッケージ基板にダイがボンディングされ、前記接着剤は、ダイとパッケージ基板上のコンパッドを接続するように電気的に選択的に配置される、請求項37〜62のいずれか一項に記載の方法。
- 前記重合硬化されたシロキサンポリマーが0.1W/(m・K)より大きい熱伝導率を有する、請求項37〜63のいずれか一項に記載の方法。
- 前記重合硬化したシロキサンポリマーが、0.2W/(m・K)を超える熱伝導率を有する、請求項37〜64のいずれか一項に記載の方法。
- 前記重合され硬化されたシロキサンポリマーが、重合前と比較して重合後に少なくとも98%の質量を有する、請求項37〜65のいずれか一項に記載の方法。
- 重合が125〜175℃に加熱することによって行われる、請求項37〜66のいずれか一項に記載の方法。
- 前記重合し硬化したシロキサンポリマーが、重合前と比較して重合後に少なくとも99%の質量を有する、請求項37〜67のいずれか一項に記載の方法。
- 硬化時間が少なくとも10分である、請求項37〜68のいずれか一項に記載の方法。
- スクリーン印刷、スピンオン、ディップ、インクジェット、カーテン、ドリップ、ローラー、グラビア、逆オフセット、押出しコーティング、スリットコーティング、スプレーコーティング、又はフレキソグラフィックデポジションによって、液体又はゲルとして付着させる、請求項37〜69のいずれか一項に記載の方法。
- 前記接着剤は、前記ウェハレベルで前記第1の基板と前記支持基板とを接合するために塗布され、続いて個々のダイに個別化される、請求項37〜70のいずれか一項に記載の方法。
- 前記接着剤が、1.58〜2.0の屈折率を有する、請求項37〜71のいずれか一項に記載の方法。
- 前記接着剤が1.6〜1.85の屈折率を有する、請求項37〜72のいずれか一項に記載の方法。
- LEDデバイスをカプセル化するための方法であって、
第1の基板上に半導体材料を供給し、前記半導体材料をドーピングすることによって発光ダイオードを形成するステップと、
ポリマー主鎖中にケイ素及び酸素を有するシロキサンポリマーならびにそれに結合したアリール基又はアルキル基を含む封入剤組成物及びこれに結合した官能性架橋基を含む接着剤組成物であって、平均粒子径10ミクロン未満の厚さを有する触媒と、
発光ダイオードを封入するように封入剤組成物を堆積させるステップと、
シロキサンポリマーの架橋基を活性化させてシロキサンポリマーをさらに重合させ、ポリマーを硬化させるために温度及び/又は光を適用するステップと
を含み、
前記重合され硬化されたシロキサンポリマーは、重合前と比較して重合後に少なくとも96%の質量を有し、そして
シロキサンポリマーは、その上に入射する可視光の25%より多くを吸収しない、方法。 - 前記封入剤組成物が、1ミクロン未満の平均粒子径を有する粒子を含む、請求項74に記載の方法。
- 前記粒子が400nm未満の平均粒子径を有する、請求項74又は75に記載の方法。
- 前記粒子が100nm未満の平均粒子径を有する、請求項74〜76のいずれか一項に記載の方法。
- 前記封入組成物が蛍光体を含む、請求項74〜77のいずれか一項に記載の方法。
- 前記蛍光体がYAG蛍光体を含む、請求項74〜78のいずれか一項に記載の方法。
- 前記蛍光体が窒化物蛍光体を含む、請求項74〜79のいずれか一項に記載の方法。
- 前記粒子が1ミクロン未満の平均粒子径を有する酸化物ナノ粒子である、請求項74〜80のいずれか一項に記載の方法。
- 亜鉛、アルミニウム、イットリウム、イッテルビウム、タングステン、チタンシリコン、チタン、アンチモン、サマリウム、ニッケル、ニッケルコバルト、モリブデン、マグネシウム、マンガン、ランタニド、鉄、インジウムスズ、銅、コバルトアルミニウム、クロム、セシウム、又はカルシウムの酸化物を含む、請求項74〜81のいずれか一項に記載の方法。
- 前記酸化物粒子が、チタン、タンタル、アルミニウム、ジルコニウム、ハフニウム、又はセレンの酸化物である、請求項74〜82のいずれか一項に記載の方法。
- 前記粒子が、窒化アルミニウム、窒化タンタル、窒化ホウ素、窒化チタン、窒化銅、窒化モリブデン、窒化タングステン、窒化鉄、窒化ケイ素、窒化インジウム、窒化ケイ素、窒化ガリウム、及び窒化炭素から選択される窒化物粒子である、請求項74〜83のいずれか一項に記載の方法。
- 前記蛍光体がケイ酸塩蛍光体である、請求項74〜84のいずれか一項に記載の方法。
- 前記蛍光体がアルミン酸塩蛍光体である、請求項74〜85のいずれか一項に記載の方法。
- 前記粒子が、酸化チタン、酸化アルミニウム、窒化アルミニウム又は窒化ホウ素を含む、請求項74〜86のいずれか一項に記載の方法。
- 前記封入剤組成物が光開始剤を含み、前記シロキサンポリマーを硬化及び硬化させるために紫外線が照射される、請求項74〜87のいずれか一項に記載の方法。
- 前記封入剤組成物が熱硬化剤を含み、前記組成物が150℃未満の温度で硬化される、請求項74〜88のいずれか一項に記載の方法。
- 硬化温度が100℃未満である、請求項74〜89のいずれか一項に記載の方法。
- 前記接着剤が、1.58〜2.0の屈折率を有する、請求項74〜90のいずれか一項に記載の方法。
- 前記接着剤が、1.6〜1.85の屈折率を有する、請求項74〜91のいずれか一項に記載の方法。
- 窒化物蛍光体が酸窒化物蛍光体である、請求項74〜92のいずれか一項に記載の方法。
- 前記粒子及び前記蛍光体が50nm未満の平均粒子径を有する、請求項74〜93のいずれか一項に記載の方法。
- 前記燐光体が前記シロキサン中に2〜10g/cm3で提供される、請求項74〜94のいずれか一項に記載の方法。
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DE102016115921B9 (de) * | 2016-08-26 | 2024-02-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
US11047747B2 (en) | 2017-03-27 | 2021-06-29 | Firouzeh Sabri | Light weight flexible temperature sensor kit |
CN107952464B (zh) * | 2017-12-13 | 2020-09-11 | 大连理工大学 | 一种新型光催化材料及双光催化电极自偏压污染控制系统 |
DE102018132955A1 (de) * | 2018-12-19 | 2020-06-25 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes bauelement |
FR3094561B1 (fr) * | 2019-03-25 | 2022-08-26 | Commissariat Energie Atomique | Procédé de fabrication d’une structure |
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Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
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CN100509933C (zh) * | 2003-01-14 | 2009-07-08 | 索尼化学株式会社 | 硬化剂粒子、硬化剂粒子的制造方法及粘接剂 |
JP2004225005A (ja) | 2003-01-27 | 2004-08-12 | Shin Etsu Polymer Co Ltd | ディスプレイ用粘着剤 |
MY151065A (en) | 2003-02-25 | 2014-03-31 | Kaneka Corp | Curing composition and method for preparing same, light-shielding paste, light-shielding resin and method for producing same, package for light-emitting diode, and semiconductor device |
US8901268B2 (en) | 2004-08-03 | 2014-12-02 | Ahila Krishnamoorthy | Compositions, layers and films for optoelectronic devices, methods of production and uses thereof |
JP4614075B2 (ja) | 2005-03-22 | 2011-01-19 | 信越化学工業株式会社 | エポキシ・シリコーン混成樹脂組成物及びその製造方法、並びに発光半導体装置 |
CN101180545A (zh) * | 2005-05-19 | 2008-05-14 | Jsr株式会社 | 晶片检查用片状探测器及其应用 |
US7466377B2 (en) * | 2005-08-26 | 2008-12-16 | Konica Minolta Opto, Inc. | Retardation film, manufacturing method thereof, polarizing plate and liquid crystal display apparatus |
US8173519B2 (en) * | 2006-03-03 | 2012-05-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JPWO2007125956A1 (ja) * | 2006-04-26 | 2009-09-10 | 積水化学工業株式会社 | 光半導体用熱硬化性組成物、光半導体素子用ダイボンド材、光半導体素子用アンダーフィル材、光半導体素子用封止剤及び光半導体素子 |
CN101432331A (zh) | 2006-04-26 | 2009-05-13 | 积水化学工业株式会社 | 光半导体用热固化性组合物、光半导体元件用固晶材料、光半导体元件用底填材料、光半导体元件用密封剂及光半导体元件 |
KR101445423B1 (ko) * | 2007-06-26 | 2014-09-26 | 코니카 미놀타 어드밴스드 레이어즈 인코포레이티드 | 클리어 하드 코트 필름, 이를 사용한 반사 방지 필름, 편광판 및 표시 장치 |
JP5226326B2 (ja) * | 2008-01-08 | 2013-07-03 | 帝人化成株式会社 | 芳香族ポリカーボネート樹脂組成物 |
US8044330B2 (en) | 2008-01-17 | 2011-10-25 | E.I. Du Pont De Nemours And Company | Electrically conductive adhesive |
US7943719B2 (en) | 2008-02-28 | 2011-05-17 | The Regents of the University of California; | Encapsulation resins |
JP5233325B2 (ja) * | 2008-02-29 | 2013-07-10 | 信越化学工業株式会社 | 熱伝導性硬化物及びその製造方法 |
WO2010000267A1 (en) | 2008-06-30 | 2010-01-07 | Hrtools A/S | Method for organizing agreements between a subordinate and a superior |
JP5453276B2 (ja) | 2008-09-03 | 2014-03-26 | 日本化薬株式会社 | シロキサン化合物の製造方法 |
JP5558947B2 (ja) | 2010-07-15 | 2014-07-23 | キヤノン株式会社 | 画像形成装置 |
JP2012107096A (ja) | 2010-11-16 | 2012-06-07 | Kaneka Corp | 熱伝導性硬化性樹脂組成物及び硬化性樹脂成形体 |
JP2012222202A (ja) * | 2011-04-11 | 2012-11-12 | Sekisui Chem Co Ltd | 光半導体装置用ダイボンド材及びそれを用いた光半導体装置 |
EP2660887B1 (en) * | 2011-11-15 | 2017-08-09 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting module and lamp using the same |
CN104247053B (zh) * | 2012-03-23 | 2017-03-08 | 夏普株式会社 | 半导体发光元件、半导体发光元件的制造方法、半导体发光装置及基板 |
WO2013190962A1 (ja) * | 2012-06-18 | 2013-12-27 | シャープ株式会社 | 半導体発光装置 |
EP2870641B1 (en) * | 2012-07-05 | 2020-05-13 | Lumileds Holding B.V. | Phosphor separated from led by transparent spacer |
JP6003763B2 (ja) * | 2012-10-30 | 2016-10-05 | デクセリアルズ株式会社 | 熱硬化性樹脂組成物、光反射性異方性導電接着剤及び発光装置 |
EP2940077A1 (en) * | 2012-12-26 | 2015-11-04 | Momentive Performance Materials Japan LLC | Curable polyorganosiloxane composition |
WO2020100267A1 (ja) | 2018-11-15 | 2020-05-22 | ヤマハ発動機株式会社 | 鞍乗型車両走行データ処理装置および鞍乗型車両走行データ処理方法 |
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