JP6663773B2 - 処理物の処理方法、および処理物の処理装置 - Google Patents

処理物の処理方法、および処理物の処理装置 Download PDF

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JP6663773B2
JP6663773B2 JP2016066227A JP2016066227A JP6663773B2 JP 6663773 B2 JP6663773 B2 JP 6663773B2 JP 2016066227 A JP2016066227 A JP 2016066227A JP 2016066227 A JP2016066227 A JP 2016066227A JP 6663773 B2 JP6663773 B2 JP 6663773B2
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processing
opening
hard mask
substrate
hydrofluoric acid
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JP2017183410A5 (enrdf_load_stackoverflow
JP2017183410A (ja
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大輔 渡邉
大輔 渡邉
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Shibaura Mechatronics Corp
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JP2016066227A 2016-03-29 2016-03-29 処理物の処理方法、および処理物の処理装置 Active JP6663773B2 (ja)

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JP2017183410A5 JP2017183410A5 (enrdf_load_stackoverflow) 2019-05-09
JP6663773B2 true JP6663773B2 (ja) 2020-03-13

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JP7156690B2 (ja) * 2018-12-14 2022-10-19 日清紡マイクロデバイス株式会社 電子デバイスの製造方法

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JPS56103446A (en) * 1980-01-22 1981-08-18 Fujitsu Ltd Semiconductor device
JP2804037B2 (ja) * 1988-02-05 1998-09-24 株式会社東芝 ドライエッチング方法
JP2757919B2 (ja) * 1989-03-03 1998-05-25 三菱電機株式会社 半導体装置の製造方法
JP2955459B2 (ja) * 1993-12-20 1999-10-04 株式会社東芝 半導体装置の製造方法
JPH11145273A (ja) * 1997-11-07 1999-05-28 Fujitsu Ltd 半導体装置の製造方法
JP3917327B2 (ja) * 1999-06-01 2007-05-23 株式会社ルネサステクノロジ 半導体装置の製造方法及び装置

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