JP6659842B2 - 半導体装置の製造装置 - Google Patents
半導体装置の製造装置 Download PDFInfo
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- JP6659842B2 JP6659842B2 JP2018530629A JP2018530629A JP6659842B2 JP 6659842 B2 JP6659842 B2 JP 6659842B2 JP 2018530629 A JP2018530629 A JP 2018530629A JP 2018530629 A JP2018530629 A JP 2018530629A JP 6659842 B2 JP6659842 B2 JP 6659842B2
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- 239000004065 semiconductor Substances 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 42
- 230000007246 mechanism Effects 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 30
- 238000005452 bending Methods 0.000 claims description 15
- 230000008602 contraction Effects 0.000 claims description 14
- 230000008859 change Effects 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
- B29C65/48—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor using adhesives, i.e. using supplementary joining material; solvent bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14311—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles using means for bonding the coating to the articles
- B29C2045/14319—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles using means for bonding the coating to the articles bonding by a fusion bond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/16—Making multilayered or multicoloured articles
- B29C45/1657—Making multilayered or multicoloured articles using means for adhering or bonding the layers or parts to each other
- B29C2045/1659—Fusion bonds
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Wire Bonding (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
Claims (8)
- ベース部と、
基板が載置される載置面を有し、前記ベース部の上に設けられるボンディングステージと、
前記ベース部と前記ボンディングステージとを連結する1以上の連結部材と、
を備え、
前記1以上の連結部材の少なくとも一つは、温度変化に伴う前記ボンディングステージの面方向の膨縮に追従して撓む連結プレートである、
ことを特徴とする半導体装置の製造装置。 - 請求項1に記載の半導体装置の製造装置であって、
前記連結部材は、前記ボンディングステージを前記ベース部から離間した状態で、前記ベース部と前記ボンディングステージとを連結する、ことを特徴とする半導体装置の製造装置。 - 請求項1に記載の半導体装置の製造装置であって、
前記連結プレートは、その高さ方向の一端が他端に対して、その厚み方向に変位可能に撓むことができる板材であり、その高さ方向が前記載置面に略直交する姿勢で前記ボンディングステージに取り付けられている、ことを特徴とする半導体装置の製造装置。 - 請求項3に記載の半導体装置の製造装置であって、
前記ボンディングステージには、温度変化に伴う前記ボンディングステージの膨縮に関わらず前記ベース部に対する位置が不変の固定点が設定されており、
前記連結プレートは、前記固定点から当該連結プレートに向かう方向と、当該連結プレートの厚み方向とが略平行になる姿勢で前記ボンディングステージに取り付けられている、
ことを特徴とする半導体装置の製造装置。 - 請求項4に記載の半導体装置の製造装置であって、
前記固定点は、2以上の前記連結プレートが、互いに相手の撓みを規制することで設定される、ことを特徴とする半導体装置の製造装置。 - 請求項1から5のいずれか1項に記載の半導体装置の製造装置であって、
前記ベース部は、
基台と、
前記基台の上に直接または間接的に設置され、上面の傾きが調整可能な傾斜調整台と、
を含み、
前記連結部材は、前記傾斜調整台と前記ボンディングステージとを連結する、
ことを特徴とする半導体装置の製造装置。 - 請求項1から5のいずれか1項に記載の半導体装置の製造装置であって、
前記ベース部は、
基台と、
前記基台の上に直接または間接的に設置され、規定の配設方向に間隔をあけて平行に並んだ2以上の直動機構と、
を含み、
前記直動機構は、前記配設方向に対して直交する移動方向に直進する移動体を有しており、
前記連結部材は、前記直動機構の移動体と前記ボンディングステージとを連結する、
ことを特徴とする半導体装置の製造装置。 - 請求項7に記載の半導体装置の製造装置であって、
前記ボンディングステージは、温度変化に伴う前記ボンディングステージの膨縮に関わらず一つの前記直動機構の移動体に対する位置が不変の固定点が設定されており、
前記ボンディングステージと他の前記直動機構の移動体とを連結する前記連結プレートは、その撓みの方向が、前記配設方向と略平行になる姿勢で前記ボンディングステージに取り付けられている、
ことを特徴とする半導体装置の製造装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017043131 | 2017-03-07 | ||
JP2017043131 | 2017-03-07 | ||
PCT/JP2018/008756 WO2018164180A1 (ja) | 2017-03-07 | 2018-03-07 | 半導体装置の製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2018164180A1 JPWO2018164180A1 (ja) | 2019-06-27 |
JP6659842B2 true JP6659842B2 (ja) | 2020-03-04 |
Family
ID=63448805
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018530629A Active JP6659842B2 (ja) | 2017-03-07 | 2018-03-07 | 半導体装置の製造装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11521890B2 (ja) |
JP (1) | JP6659842B2 (ja) |
TW (1) | TWI673814B (ja) |
WO (1) | WO2018164180A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115122651B (zh) * | 2022-06-14 | 2023-08-29 | 湖南中冷科技有限公司 | 一种冷库保温板打孔嵌件装置及方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4431474A (en) * | 1982-08-13 | 1984-02-14 | Western Electric Company, Inc. | Thermocompression bonding apparatus |
US5205899A (en) * | 1992-06-04 | 1993-04-27 | Gloucester Engineering Co., Inc. | Thermal expansion compensated hot knife |
US5511799A (en) | 1993-06-07 | 1996-04-30 | Applied Materials, Inc. | Sealing device useful in semiconductor processing apparatus for bridging materials having a thermal expansion differential |
JP3382436B2 (ja) | 1995-10-27 | 2003-03-04 | 松下電器産業株式会社 | 電子部品搭載装置 |
JP3936785B2 (ja) * | 1997-09-06 | 2007-06-27 | キヤノンアネルバ株式会社 | 基板処理装置 |
JP3149398B2 (ja) * | 1998-06-16 | 2001-03-26 | 株式会社アドバンスト・ディスプレイ | 液晶パネル製造装置および方法 |
JP2004158547A (ja) * | 2002-11-05 | 2004-06-03 | Sumitomo Osaka Cement Co Ltd | ヒータ |
JP2005262358A (ja) * | 2004-03-17 | 2005-09-29 | Shinkawa Ltd | 直動テーブル |
JP5167072B2 (ja) | 2008-11-04 | 2013-03-21 | アルファーデザイン株式会社 | フリップチップボンダ装置 |
DE102011053498A1 (de) * | 2011-09-12 | 2013-03-14 | Aixtron Se | Verfahren und Vorrichtung zur Ermittlung der Verformung eines Substrates |
US9058974B2 (en) * | 2013-06-03 | 2015-06-16 | International Business Machines Corporation | Distorting donor wafer to corresponding distortion of host wafer |
WO2015156529A1 (ko) * | 2014-04-11 | 2015-10-15 | 주식회사 좋은기술 | 기판 가열 장치 |
-
2018
- 2018-03-07 JP JP2018530629A patent/JP6659842B2/ja active Active
- 2018-03-07 WO PCT/JP2018/008756 patent/WO2018164180A1/ja active Application Filing
- 2018-03-07 US US16/622,297 patent/US11521890B2/en active Active
- 2018-03-07 TW TW107107534A patent/TWI673814B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO2018164180A1 (ja) | 2018-09-13 |
US20200273742A1 (en) | 2020-08-27 |
TW201901834A (zh) | 2019-01-01 |
US11521890B2 (en) | 2022-12-06 |
JPWO2018164180A1 (ja) | 2019-06-27 |
TWI673814B (zh) | 2019-10-01 |
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