JP6659074B2 - Ntaペースト - Google Patents
Ntaペースト Download PDFInfo
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- JP6659074B2 JP6659074B2 JP2015202461A JP2015202461A JP6659074B2 JP 6659074 B2 JP6659074 B2 JP 6659074B2 JP 2015202461 A JP2015202461 A JP 2015202461A JP 2015202461 A JP2015202461 A JP 2015202461A JP 6659074 B2 JP6659074 B2 JP 6659074B2
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- Prior art keywords
- nta
- electrode
- glass
- bus bar
- paste
- Prior art date
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- 239000011521 glass Substances 0.000 claims description 63
- 239000000463 material Substances 0.000 claims description 52
- 239000000843 powder Substances 0.000 claims description 25
- 238000005245 sintering Methods 0.000 claims description 18
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 12
- 239000003960 organic solvent Substances 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 9
- 239000011368 organic material Substances 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 description 44
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 40
- 239000004332 silver Substances 0.000 description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 239000010408 film Substances 0.000 description 20
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000000758 substrate Substances 0.000 description 20
- 239000005355 lead glass Substances 0.000 description 18
- 238000005476 soldering Methods 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 14
- 238000010304 firing Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 238000001035 drying Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 238000007650 screen-printing Methods 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- BNHZZINHLCTQKT-UHFFFAOYSA-N butyl acetate;2-(2-hydroxyethoxy)ethanol Chemical compound OCCOCCO.CCCCOC(C)=O BNHZZINHLCTQKT-UHFFFAOYSA-N 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000013383 initial experiment Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 1
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 1
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- SMEGJBVQLJJKKX-HOTMZDKISA-N [(2R,3S,4S,5R,6R)-5-acetyloxy-3,4,6-trihydroxyoxan-2-yl]methyl acetate Chemical compound CC(=O)OC[C@@H]1[C@H]([C@@H]([C@H]([C@@H](O1)O)OC(=O)C)O)O SMEGJBVQLJJKKX-HOTMZDKISA-N 0.000 description 1
- 229940081735 acetylcellulose Drugs 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229940015273 buspar Drugs 0.000 description 1
- QWCRAEMEVRGPNT-UHFFFAOYSA-N buspirone Chemical compound C1C(=O)N(CCCCN2CCN(CC2)C=2N=CC=CN=2)C(=O)CC21CCCC2 QWCRAEMEVRGPNT-UHFFFAOYSA-N 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/34—Electrical components comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Dispersion Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Conductive Materials (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Description
・乾燥BOX(乾燥用の箱、容器)等を使用する。
・40〜100℃程度の温度領域で、
・100分程度の熱処理(乾燥処理)(溶媒飛ばし工程)
を行う。これにより、NTAペーストをスクリーン印刷した太陽電池のバスバー電極の部分(パターン部分)に含まれる(4)溶剤が揮発され、かつ太陽電池のバスバー電極の下地の部分に接着されることとなる。
・乾燥BOX(乾燥用の箱、容器)等を使用する。
・遠赤外線焼結装置の1例として、
:340〜900℃の範囲内で、かつ3〜60秒の範囲で
焼結する。
・スクリーン線径:16μm
・メッシュ :325本/inch
・目開き(オープニング):62μm
・空間率 :63%
である。ここで、太陽電池のバスバー電極の膜厚をコントロールするには、上記スクリーンの条件を変えるか、あるいはNTAペースト中の(2)有機溶材の濃度を変えることで行う。
尚、S5及びS7の印刷を行い、両者を同時に焼成してもよい。
図10の(a)のAg 100%、NTA 0% 平均約17.0%
図10の(b)のAg 50%、NTA 50% 平均約17.0%
図10の(c)のAg 0%、NTA 100% 平均約17.2%
試作実験結果は、バスバー電極のパターンを印刷する材料として、図10の(a)と、図10の(b)とでは太陽電池を作成したときの変換効率が平均約17.0%でほぼ同じ結果が得られ、更に、図10の(c)では変換効率が平均約17.2%が得られた。これら図10の(a)から(c)のいずれもほぼ同じ変換効率の範囲内か、あるいは図10の(c)のNTA 100%が若干高い変換効率であることが初期実験結果から判明する。尚、NTAガラスは、バナジウム、バリウム、鉄から構成され、特に鉄は内部的に強く結合して当該内部に留まっており、他の材料と混合してもその結合性は極めて小さい性質を有すること(特許第5333976号等参照)、更に既述した本発明の高電子濃度領域とリード線との間の経路(経路1と、経路2とが並列)の改善によると推測される。
・NTA 100% Ag 0%
・NTA 90% Ag 10%
・NTA 80% Ag 20%
・NTA 70% Ag 30%
とし、これらで太陽電池を作成し、各測定結果(効率)は図示の通りであった。尚、初期実験であるので、測定結果には図示のようにかなりのバラツキがあるが、16.9から17.5の範囲内に収まっており、NTA 100%でバスバー電極15を作成(つまり、Agなしで作成)して太陽電池を製造した場合でも、NTA 70%(あるいは、更に80%、90%)に比して同程度ないし若干高い効率が得られ、NTA 100%でも使えることが判明した(発明者らはこの事実を発見した)。
12:高電子濃度領域(拡散ドーピング)
13:絶縁膜(窒化シリコン膜)
14:電子取出口(フィンガー電極)
15:バスバー電極
16:裏面電極
17:リード線
Claims (5)
- 粒子を結合させて導電性を形成する主材、前記主材の粒子を結合させる有機材、濃度を調整する有機溶媒、および全体をまとめると共に塗布材料に接着させる樹脂からなり、これらの混練物を焼結して導電性の電極を形成するペーストにおいて、
前記主材としてバナジン酸塩ガラスの粉末を100wt%、混入して作成した混練物からなり、該作成した混練物を340℃ないし900℃の範囲内、かつ1秒ないし60秒の範囲内で焼結して導電性の電極を形成させることを特徴とするNTAペースト。 - 前記主材のバナジン酸塩ガラスの粉末を100wt%の代わりに、当該バナジン酸塩ガラスの粉末に銀粉末0以上から50wt%、残余を該バナジン酸塩ガラスを混入したことを特徴とする請求項1記載のNTAペースト。
- 前記340℃ないし900℃の範囲内、かつ1秒ないし60秒の範囲内で焼結するとして、赤外線あるいは遠赤外線を照射して行うことを特徴とする請求項1から請求項2のいずれかに記載のNTAペースト。
- 前記赤外線あるいは遠赤外線を照射するランプ、セラミックヒータ、あるいはレーザとしたことを特徴とする請求項3記載のNTAペースト。
- 前記電極は、太陽電池の電極としたことを特徴とする請求項1から請求項4のいずれかに記載のNTAペースト。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015202461A JP6659074B2 (ja) | 2015-10-13 | 2015-10-13 | Ntaペースト |
TW105118738A TWI631087B (zh) | 2015-10-13 | 2016-06-15 | Nta膏 |
KR1020160078511A KR101998207B1 (ko) | 2015-10-13 | 2016-06-23 | Nta 페이스트 |
CN201610537480.4A CN106571171B (zh) | 2015-10-13 | 2016-07-08 | Nta膏 |
PCT/JP2016/079947 WO2017065109A1 (ja) | 2015-10-13 | 2016-10-07 | Ntaペースト |
KR1020190069928A KR20190071651A (ko) | 2015-10-13 | 2019-06-13 | Nta 페이스트 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015202461A JP6659074B2 (ja) | 2015-10-13 | 2015-10-13 | Ntaペースト |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017076486A JP2017076486A (ja) | 2017-04-20 |
JP6659074B2 true JP6659074B2 (ja) | 2020-03-04 |
Family
ID=58517179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015202461A Active JP6659074B2 (ja) | 2015-10-13 | 2015-10-13 | Ntaペースト |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6659074B2 (ja) |
KR (2) | KR101998207B1 (ja) |
CN (1) | CN106571171B (ja) |
TW (1) | TWI631087B (ja) |
WO (1) | WO2017065109A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018110178A (ja) * | 2016-12-30 | 2018-07-12 | アートビーム有限会社 | 太陽電池および太陽電池の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5084421A (en) * | 1990-07-27 | 1992-01-28 | Johnson Matthey, Inc. | Silver-glass pastes |
WO2008059641A1 (fr) * | 2006-11-13 | 2008-05-22 | Tokai Industry Corp. | Système de circuit électrique/électronique avec un élément de verre conducteur |
JP2011144077A (ja) * | 2010-01-15 | 2011-07-28 | Tokyo Electronics Chemicals Corp | 高導電性ペースト組成物 |
US20110180139A1 (en) * | 2010-01-25 | 2011-07-28 | Hitachi Chemical Company, Ltd. | Paste composition for electrode and photovoltaic cell |
JP5765799B2 (ja) * | 2010-06-03 | 2015-08-19 | 学校法人近畿大学 | 耐水性および化学耐久性に優れたバナジン酸塩−リン酸塩ガラス |
JP5120477B2 (ja) * | 2011-04-07 | 2013-01-16 | 日立化成工業株式会社 | 電極用ペースト組成物及び太陽電池 |
JP5791102B2 (ja) * | 2011-07-05 | 2015-10-07 | 学校法人近畿大学 | 耐水性および化学耐久性に優れたバナジン酸塩−タングステン酸塩ガラス |
CN102796488B (zh) * | 2012-07-26 | 2014-08-20 | 深圳大学 | 耐高温绝缘胶粘剂 |
JP6804199B2 (ja) * | 2015-03-30 | 2020-12-23 | アートビーム株式会社 | 太陽電池および太陽電池の製造方法 |
-
2015
- 2015-10-13 JP JP2015202461A patent/JP6659074B2/ja active Active
-
2016
- 2016-06-15 TW TW105118738A patent/TWI631087B/zh active
- 2016-06-23 KR KR1020160078511A patent/KR101998207B1/ko active IP Right Grant
- 2016-07-08 CN CN201610537480.4A patent/CN106571171B/zh active Active
- 2016-10-07 WO PCT/JP2016/079947 patent/WO2017065109A1/ja active Application Filing
-
2019
- 2019-06-13 KR KR1020190069928A patent/KR20190071651A/ko not_active Application Discontinuation
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CN106571171A (zh) | 2017-04-19 |
KR20190071651A (ko) | 2019-06-24 |
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WO2017065109A1 (ja) | 2017-04-20 |
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