JP6657081B2 - スイッチリニアライザ - Google Patents

スイッチリニアライザ Download PDF

Info

Publication number
JP6657081B2
JP6657081B2 JP2016526971A JP2016526971A JP6657081B2 JP 6657081 B2 JP6657081 B2 JP 6657081B2 JP 2016526971 A JP2016526971 A JP 2016526971A JP 2016526971 A JP2016526971 A JP 2016526971A JP 6657081 B2 JP6657081 B2 JP 6657081B2
Authority
JP
Japan
Prior art keywords
switch
varactor
switches
linearizer
order distortion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016526971A
Other languages
English (en)
Japanese (ja)
Other versions
JP2016529788A5 (enExample
JP2016529788A (ja
Inventor
ディシッコ、マーク・ジェラルド
ジャン、シャンドン
ワン、シンウェイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of JP2016529788A publication Critical patent/JP2016529788A/ja
Publication of JP2016529788A5 publication Critical patent/JP2016529788A5/ja
Application granted granted Critical
Publication of JP6657081B2 publication Critical patent/JP6657081B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16Modifications for eliminating interference voltages or currents
    • H03K17/161Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit

Landscapes

  • Amplifiers (AREA)
  • Electronic Switches (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
JP2016526971A 2013-07-17 2014-07-03 スイッチリニアライザ Active JP6657081B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/944,709 US10491209B2 (en) 2013-07-17 2013-07-17 Switch linearizer
US13/944,709 2013-07-17
PCT/US2014/045472 WO2015009462A1 (en) 2013-07-17 2014-07-03 Switch linearizer

Publications (3)

Publication Number Publication Date
JP2016529788A JP2016529788A (ja) 2016-09-23
JP2016529788A5 JP2016529788A5 (enExample) 2017-07-20
JP6657081B2 true JP6657081B2 (ja) 2020-03-04

Family

ID=51213062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016526971A Active JP6657081B2 (ja) 2013-07-17 2014-07-03 スイッチリニアライザ

Country Status (6)

Country Link
US (1) US10491209B2 (enExample)
EP (1) EP3022842B1 (enExample)
JP (1) JP6657081B2 (enExample)
KR (1) KR102189916B1 (enExample)
CN (1) CN105453433B (enExample)
WO (1) WO2015009462A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018186835A1 (en) * 2017-04-04 2018-10-11 Intel Corporation Thin-film transistor embedded dynamic random-access memory
CN108736866B (zh) * 2017-04-24 2021-12-28 深圳市中兴微电子技术有限公司 一种cmos soi射频开关电路
US20180337670A1 (en) * 2017-05-17 2018-11-22 Skyworks Solutions, Inc. Switch linearization with anti-series varactor
KR102493467B1 (ko) 2017-08-16 2023-01-31 삼성전자 주식회사 버랙터 회로를 포함하는 발진장치 및 이의 동작 방법
US10455392B2 (en) * 2017-09-27 2019-10-22 Apple Inc. Adaptive matching with antenna detuning detection
US11450669B2 (en) 2018-07-24 2022-09-20 Intel Corporation Stacked thin-film transistor based embedded dynamic random-access memory
CN112272017B (zh) * 2020-09-30 2022-04-05 锐石创芯(深圳)科技股份有限公司 一种射频开关电路
TW202245420A (zh) 2020-12-31 2022-11-16 美商天工方案公司 具有不對稱反串聯變容器對的開關線性化
US12028060B2 (en) * 2021-06-17 2024-07-02 Murata Manufacturing Co., Ltd. Switch capacitance cancellation circuit
US20230353092A1 (en) * 2022-04-29 2023-11-02 Shaoxing Yuanfang Semiconductor Co., Ltd. Semiconductor switches for analog signals with improved linear response
US20240154578A1 (en) * 2022-11-08 2024-05-09 Qorvo Us, Inc. Piecewise conductance network for rf switch on-state linearization

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3877597B2 (ja) 2002-01-21 2007-02-07 シャープ株式会社 マルチ端子型mosバラクタ
JP4060746B2 (ja) 2003-04-18 2008-03-12 株式会社ヨコオ 可変同調型アンテナおよびそれを用いた携帯無線機
US7109944B2 (en) 2004-01-26 2006-09-19 Kyocera Corporation Antenna using variable capacitance element and wireless communication apparatus using the same
WO2006002347A1 (en) 2004-06-23 2006-01-05 Peregrine Semiconductor Corporation Integrated rf front end
CN101288230A (zh) 2005-06-08 2008-10-15 加利福尼亚大学董事会 线性可变电压二极管电容器和自适应匹配网络
US8125399B2 (en) 2006-01-14 2012-02-28 Paratek Microwave, Inc. Adaptively tunable antennas incorporating an external probe to monitor radiated power
JP4239205B2 (ja) * 2006-06-08 2009-03-18 ソニー・エリクソン・モバイルコミュニケーションズ株式会社 携帯通信端末装置
JP2008258670A (ja) * 2007-03-30 2008-10-23 Matsushita Electric Ind Co Ltd アンテナ装置及び携帯端末
US20090128992A1 (en) 2007-11-19 2009-05-21 Broadcom Corporation Mos capacitor structure and linearization method for reduced variation of the capacitance
JP2009194891A (ja) 2008-01-15 2009-08-27 Toshiba Corp 高周波スイッチ回路
US20090181630A1 (en) 2008-01-15 2009-07-16 Kabushiki Kaisha Toshiba Radio frequency switch circuit
JP5417346B2 (ja) * 2008-02-28 2014-02-12 ペレグリン セミコンダクター コーポレーション 集積回路素子内でキャパシタをデジタル処理で同調するときに用いられる方法及び装置
US8130519B2 (en) 2008-11-12 2012-03-06 Supertex, Inc. Led driver with low harmonic distortion of input AC current and methods of controlling the same
JP2011015289A (ja) 2009-07-03 2011-01-20 Renesas Electronics Corp 半導体集積回路装置
JP5488962B2 (ja) * 2009-08-06 2014-05-14 日立金属株式会社 アンテナ回路
JP5632663B2 (ja) * 2010-06-29 2014-11-26 ルネサスエレクトロニクス株式会社 半導体装置
US8253506B2 (en) * 2010-10-05 2012-08-28 Qualcomm, Incorporated Wideband temperature compensated resonator and wideband VCO
JP2013070248A (ja) 2011-09-22 2013-04-18 Nec Casio Mobile Communications Ltd アンテナ共振整合調整回路及び携帯端末
CN102832919B (zh) 2012-09-13 2014-08-20 中国科学院半导体研究所 栅压自举开关电路
US9240770B2 (en) * 2013-03-15 2016-01-19 Rf Micro Devices, Inc. Harmonic cancellation circuit for an RF switch branch

Also Published As

Publication number Publication date
EP3022842B1 (en) 2019-10-30
US10491209B2 (en) 2019-11-26
US20150022024A1 (en) 2015-01-22
WO2015009462A1 (en) 2015-01-22
EP3022842A1 (en) 2016-05-25
CN105453433A (zh) 2016-03-30
JP2016529788A (ja) 2016-09-23
CN105453433B (zh) 2019-11-29
KR102189916B1 (ko) 2020-12-11
KR20160032162A (ko) 2016-03-23

Similar Documents

Publication Publication Date Title
JP6657081B2 (ja) スイッチリニアライザ
Kim et al. A highly linear 1 GHz 1.3 dB NF CMOS low-noise amplifier with complementary transconductance linearization
US9240770B2 (en) Harmonic cancellation circuit for an RF switch branch
US9379673B2 (en) Distortion cancellation for dual stage carrier-aggregation (CA) low noise amplifier (LNA) non-linear second order products
US11923809B2 (en) Ultra compact multi-band transmitter with robust AM-PM distortion self-suppression techniques
CN105830341B (zh) 用于低噪声放大器(lna)非线性二阶产物的失真抵消
US10141894B1 (en) Radio frequency (RF) amplifier
US11764738B2 (en) Segmented power amplifier arrangements with feedforward adaptive bias circuits
US9590561B2 (en) Power amplifier
US9467196B2 (en) Quadrature current-combining linearizing circuit for generating arbitrary phase and amplitude
US8138844B1 (en) System and method for crystal oscillator frequency tuning
Chen et al. A low power impedance transparent receiver with linearity enhancement technique for IoT applications
US20240356500A1 (en) Amplifier with active auxiliary non-linearity cancellation circuitry
Han Bandwidth‐switchable cellular CMOS RF receiver front‐end for intra‐band carrier aggregation
JP2007221308A (ja) 電力増幅器及び高周波通信装置
WO2018036627A1 (en) Integrated amplifier

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170607

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170607

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180904

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20181204

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20190204

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190215

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190730

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20200107

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20200205

R150 Certificate of patent or registration of utility model

Ref document number: 6657081

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250