KR102189916B1 - 스위치 선형화장치 - Google Patents

스위치 선형화장치 Download PDF

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Publication number
KR102189916B1
KR102189916B1 KR1020167003578A KR20167003578A KR102189916B1 KR 102189916 B1 KR102189916 B1 KR 102189916B1 KR 1020167003578 A KR1020167003578 A KR 1020167003578A KR 20167003578 A KR20167003578 A KR 20167003578A KR 102189916 B1 KR102189916 B1 KR 102189916B1
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South Korea
Prior art keywords
switches
terminal
coupled
varactor
order distortion
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KR1020167003578A
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English (en)
Korean (ko)
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KR20160032162A (ko
Inventor
마크 제랄드 디시코
시앙동 창
신웨이 왕
Original Assignee
퀄컴 인코포레이티드
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H04B1/48—Transmit/receive switching in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter

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  • Amplifiers (AREA)
  • Electronic Switches (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
KR1020167003578A 2013-07-17 2014-07-03 스위치 선형화장치 Active KR102189916B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/944,709 2013-07-17
US13/944,709 US10491209B2 (en) 2013-07-17 2013-07-17 Switch linearizer
PCT/US2014/045472 WO2015009462A1 (en) 2013-07-17 2014-07-03 Switch linearizer

Publications (2)

Publication Number Publication Date
KR20160032162A KR20160032162A (ko) 2016-03-23
KR102189916B1 true KR102189916B1 (ko) 2020-12-11

Family

ID=51213062

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167003578A Active KR102189916B1 (ko) 2013-07-17 2014-07-03 스위치 선형화장치

Country Status (6)

Country Link
US (1) US10491209B2 (enExample)
EP (1) EP3022842B1 (enExample)
JP (1) JP6657081B2 (enExample)
KR (1) KR102189916B1 (enExample)
CN (1) CN105453433B (enExample)
WO (1) WO2015009462A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110366778B (zh) * 2017-04-04 2024-04-09 英特尔公司 薄膜晶体管嵌入式动态随机存取存储器
CN108736866B (zh) * 2017-04-24 2021-12-28 深圳市中兴微电子技术有限公司 一种cmos soi射频开关电路
US20180337670A1 (en) * 2017-05-17 2018-11-22 Skyworks Solutions, Inc. Switch linearization with anti-series varactor
KR102493467B1 (ko) 2017-08-16 2023-01-31 삼성전자 주식회사 버랙터 회로를 포함하는 발진장치 및 이의 동작 방법
US10455392B2 (en) * 2017-09-27 2019-10-22 Apple Inc. Adaptive matching with antenna detuning detection
US11450669B2 (en) 2018-07-24 2022-09-20 Intel Corporation Stacked thin-film transistor based embedded dynamic random-access memory
CN112272017B (zh) * 2020-09-30 2022-04-05 锐石创芯(深圳)科技股份有限公司 一种射频开关电路
TW202245420A (zh) * 2020-12-31 2022-11-16 美商天工方案公司 具有不對稱反串聯變容器對的開關線性化
US12028060B2 (en) * 2021-06-17 2024-07-02 Murata Manufacturing Co., Ltd. Switch capacitance cancellation circuit
US20230353092A1 (en) * 2022-04-29 2023-11-02 Shaoxing Yuanfang Semiconductor Co., Ltd. Semiconductor switches for analog signals with improved linear response
US20240154578A1 (en) * 2022-11-08 2024-05-09 Qorvo Us, Inc. Piecewise conductance network for rf switch on-state linearization

Citations (2)

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JP2011015289A (ja) * 2009-07-03 2011-01-20 Renesas Electronics Corp 半導体集積回路装置
JP2011040811A (ja) * 2009-08-06 2011-02-24 Hitachi Metals Ltd アンテナ回路

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JP3877597B2 (ja) 2002-01-21 2007-02-07 シャープ株式会社 マルチ端子型ｍｏｓバラクタ
JP4060746B2 (ja) 2003-04-18 2008-03-12 株式会社ヨコオ 可変同調型アンテナおよびそれを用いた携帯無線機
US7109944B2 (en) 2004-01-26 2006-09-19 Kyocera Corporation Antenna using variable capacitance element and wireless communication apparatus using the same
JP4659826B2 (ja) 2004-06-23 2011-03-30 ペレグリン セミコンダクター コーポレーション Ｒｆフロントエンド集積回路
US7902585B2 (en) 2005-06-08 2011-03-08 Technical University Delft Linear variable voltage diode capacitor and adaptive matching networks
US8125399B2 (en) 2006-01-14 2012-02-28 Paratek Microwave, Inc. Adaptively tunable antennas incorporating an external probe to monitor radiated power
JP4239205B2 (ja) * 2006-06-08 2009-03-18 ソニー・エリクソン・モバイルコミュニケーションズ株式会社 携帯通信端末装置
JP2008258670A (ja) * 2007-03-30 2008-10-23 Matsushita Electric Ind Co Ltd アンテナ装置及び携帯端末
US20090128992A1 (en) 2007-11-19 2009-05-21 Broadcom Corporation Mos capacitor structure and linearization method for reduced variation of the capacitance
US20090181630A1 (en) 2008-01-15 2009-07-16 Kabushiki Kaisha Toshiba Radio frequency switch circuit
JP2009194891A (ja) 2008-01-15 2009-08-27 Toshiba Corp 高周波スイッチ回路
EP3958468B1 (en) * 2008-02-28 2024-01-31 pSemi Corporation Method and apparatus for use in digitally tuning a capacitor in an integrated circuit device
US8130519B2 (en) 2008-11-12 2012-03-06 Supertex, Inc. Led driver with low harmonic distortion of input AC current and methods of controlling the same
JP5632663B2 (ja) * 2010-06-29 2014-11-26 ルネサスエレクトロニクス株式会社 半導体装置
US8253506B2 (en) * 2010-10-05 2012-08-28 Qualcomm, Incorporated Wideband temperature compensated resonator and wideband VCO
JP2013070248A (ja) 2011-09-22 2013-04-18 Nec Casio Mobile Communications Ltd アンテナ共振整合調整回路及び携帯端末
CN102832919B (zh) 2012-09-13 2014-08-20 中国科学院半导体研究所 栅压自举开关电路
US9240770B2 (en) * 2013-03-15 2016-01-19 Rf Micro Devices, Inc. Harmonic cancellation circuit for an RF switch branch

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011015289A (ja) * 2009-07-03 2011-01-20 Renesas Electronics Corp 半導体集積回路装置
JP2011040811A (ja) * 2009-08-06 2011-02-24 Hitachi Metals Ltd アンテナ回路

Also Published As

Publication number Publication date
WO2015009462A1 (en) 2015-01-22
EP3022842A1 (en) 2016-05-25
US20150022024A1 (en) 2015-01-22
JP2016529788A (ja) 2016-09-23
JP6657081B2 (ja) 2020-03-04
CN105453433B (zh) 2019-11-29
KR20160032162A (ko) 2016-03-23
CN105453433A (zh) 2016-03-30
US10491209B2 (en) 2019-11-26
EP3022842B1 (en) 2019-10-30

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