JP6656261B2 - 蒸発した材料を堆積させるための装置、分配管、真空堆積チャンバ、及び蒸発した材料を堆積させるための方法 - Google Patents
蒸発した材料を堆積させるための装置、分配管、真空堆積チャンバ、及び蒸発した材料を堆積させるための方法 Download PDFInfo
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- JP6656261B2 JP6656261B2 JP2017542272A JP2017542272A JP6656261B2 JP 6656261 B2 JP6656261 B2 JP 6656261B2 JP 2017542272 A JP2017542272 A JP 2017542272A JP 2017542272 A JP2017542272 A JP 2017542272A JP 6656261 B2 JP6656261 B2 JP 6656261B2
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- 238000009826 distribution Methods 0.000 title claims description 445
- 238000000151 deposition Methods 0.000 title claims description 149
- 238000000034 method Methods 0.000 title claims description 36
- 238000001771 vacuum deposition Methods 0.000 title claims description 26
- 239000011364 vaporized material Substances 0.000 title claims description 20
- 239000000463 material Substances 0.000 claims description 498
- 239000000758 substrate Substances 0.000 claims description 171
- 230000008021 deposition Effects 0.000 claims description 121
- 238000001704 evaporation Methods 0.000 claims description 56
- 239000012530 fluid Substances 0.000 claims description 49
- 239000011368 organic material Substances 0.000 claims description 43
- 238000004891 communication Methods 0.000 claims description 38
- 230000008020 evaporation Effects 0.000 claims description 20
- 238000007599 discharging Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000012423 maintenance Methods 0.000 description 7
- 238000013519 translation Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 241000284156 Clerodendrum quadriloculare Species 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- IIDFEIDMIKSJSV-UHFFFAOYSA-N dipropoxyphosphinothioyloxy-dipropoxy-sulfanylidene-$l^{5}-phosphane Chemical compound CCCOP(=S)(OCCC)OP(=S)(OCCC)OCCC IIDFEIDMIKSJSV-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- -1 etc.) Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2014/074089 WO2016070942A1 (en) | 2014-11-07 | 2014-11-07 | Material deposition arrangement and material distribution arrangement for vacuum deposition |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017173656A Division JP6543664B2 (ja) | 2017-09-11 | 2017-09-11 | 真空堆積チャンバ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017535677A JP2017535677A (ja) | 2017-11-30 |
JP6656261B2 true JP6656261B2 (ja) | 2020-03-04 |
Family
ID=51871035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017542272A Active JP6656261B2 (ja) | 2014-11-07 | 2014-11-07 | 蒸発した材料を堆積させるための装置、分配管、真空堆積チャンバ、及び蒸発した材料を堆積させるための方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6656261B2 (ko) |
KR (2) | KR101990619B1 (ko) |
CN (2) | CN107002221B (ko) |
TW (3) | TW201945565A (ko) |
WO (1) | WO2016070942A1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110199050A (zh) * | 2017-01-31 | 2019-09-03 | 应用材料公司 | 材料沉积布置、真空沉积系统和其方法 |
CN106637091B (zh) * | 2017-02-24 | 2019-08-30 | 旭科新能源股份有限公司 | 用于薄膜太阳能电池制造的高温蒸发炉 |
KR102337249B1 (ko) * | 2018-04-18 | 2021-12-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 증발된 재료를 기판 상에 증착하기 위한 증발 소스, 증착 장치, 증발된 재료의 증기압을 측정하기 위한 방법, 및 증발된 재료의 증발 레이트를 결정하기 위한 방법 |
JP2020521039A (ja) * | 2018-05-04 | 2020-07-16 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 蒸発した材料を堆積させるための蒸発源、真空堆積システム、及び蒸発した材料を堆積させるための方法 |
KR20210121131A (ko) * | 2019-01-30 | 2021-10-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 진공 시스템을 세정하기 위한 방법, 기판의 진공 프로세싱을 위한 방법, 및 기판을 진공 프로세싱하기 위한 장치 |
CN109722651B (zh) * | 2019-02-18 | 2021-03-23 | 长江存储科技有限责任公司 | 薄膜沉积设备及气体供给装置 |
TWI755956B (zh) * | 2020-12-03 | 2022-02-21 | 財團法人國家實驗研究院 | 氣體分配模組與真空鍍膜裝置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002184571A (ja) * | 2000-12-15 | 2002-06-28 | Denso Corp | 有機el素子の製造方法 |
US20040035360A1 (en) * | 2002-05-17 | 2004-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
JP4557170B2 (ja) * | 2004-11-26 | 2010-10-06 | 三星モバイルディスプレイ株式會社 | 蒸発源 |
JP4767000B2 (ja) * | 2005-11-28 | 2011-09-07 | 日立造船株式会社 | 真空蒸着装置 |
KR101106289B1 (ko) * | 2006-08-04 | 2012-01-18 | 순천향대학교 산학협력단 | 증착 공정을 위한 선형 증착 소스 |
US20080131587A1 (en) * | 2006-11-30 | 2008-06-05 | Boroson Michael L | Depositing organic material onto an oled substrate |
JP5081516B2 (ja) * | 2007-07-12 | 2012-11-28 | 株式会社ジャパンディスプレイイースト | 蒸着方法および蒸着装置 |
US20100159132A1 (en) * | 2008-12-18 | 2010-06-24 | Veeco Instruments, Inc. | Linear Deposition Source |
WO2010106410A1 (en) * | 2009-03-16 | 2010-09-23 | Applied Materials, Inc. | Evaporator, coating installation, and method for use thereof |
US20100233353A1 (en) * | 2009-03-16 | 2010-09-16 | Applied Materials, Inc. | Evaporator, coating installation, and method for use thereof |
WO2010114118A1 (ja) * | 2009-04-03 | 2010-10-07 | 東京エレクトロン株式会社 | 蒸着ヘッドおよび成膜装置 |
DE102010041376A1 (de) * | 2009-09-25 | 2011-04-07 | Von Ardenne Anlagentechnik Gmbh | Verdampfereinrichtung für eine Beschichtungsanlage und Verfahren zur Koverdampfung von mindestens zwei Substanzen |
CN102315148A (zh) * | 2010-06-30 | 2012-01-11 | 上方能源技术(杭州)有限公司 | 用于镀膜的基板传输装置和基板传输方法 |
KR101223723B1 (ko) * | 2010-07-07 | 2013-01-18 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
WO2012124563A1 (ja) * | 2011-03-14 | 2012-09-20 | シャープ株式会社 | 蒸着粒子射出装置および蒸着装置並びに蒸着方法 |
FR2981667B1 (fr) * | 2011-10-21 | 2014-07-04 | Riber | Systeme d'injection pour dispositif de depot de couches minces par evaporation sous vide |
KR102052069B1 (ko) * | 2012-11-09 | 2019-12-05 | 삼성디스플레이 주식회사 | 유기층 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
CN103966554B (zh) * | 2013-01-31 | 2018-08-07 | 日立造船株式会社 | 真空蒸镀装置和真空蒸镀方法 |
TWI737969B (zh) * | 2013-04-12 | 2021-09-01 | 日商大日本印刷股份有限公司 | 用於製造有機半導體元件的蒸鍍遮罩、用於製造有機半導體元件的蒸鍍遮罩之製造方法、用於製造有機半導體元件的蒸鍍遮罩準備體、圖案之形成方法、及有機半導體元件之製造方法 |
EP3119920A1 (en) * | 2014-03-21 | 2017-01-25 | Applied Materials, Inc. | Evaporation source for organic material |
-
2014
- 2014-11-07 KR KR1020177015571A patent/KR101990619B1/ko active IP Right Grant
- 2014-11-07 CN CN201480083241.5A patent/CN107002221B/zh active Active
- 2014-11-07 JP JP2017542272A patent/JP6656261B2/ja active Active
- 2014-11-07 CN CN201710574813.5A patent/CN107502858B/zh active Active
- 2014-11-07 WO PCT/EP2014/074089 patent/WO2016070942A1/en active Application Filing
- 2014-11-07 KR KR1020177019747A patent/KR102082192B1/ko active IP Right Grant
-
2015
- 2015-11-06 TW TW108115443A patent/TW201945565A/zh unknown
- 2015-11-06 TW TW106123717A patent/TWI690611B/zh not_active IP Right Cessation
- 2015-11-06 TW TW104136582A patent/TWI641709B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR102082192B1 (ko) | 2020-02-27 |
KR20170086679A (ko) | 2017-07-26 |
TW201629248A (zh) | 2016-08-16 |
JP2017535677A (ja) | 2017-11-30 |
CN107002221B (zh) | 2020-03-03 |
TW201805455A (zh) | 2018-02-16 |
KR101990619B1 (ko) | 2019-06-18 |
TWI641709B (zh) | 2018-11-21 |
KR20170083592A (ko) | 2017-07-18 |
TW201945565A (zh) | 2019-12-01 |
CN107502858B (zh) | 2020-06-19 |
WO2016070942A1 (en) | 2016-05-12 |
CN107002221A (zh) | 2017-08-01 |
TWI690611B (zh) | 2020-04-11 |
CN107502858A (zh) | 2017-12-22 |
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