JP6649890B2 - バックコンバータのためのモノリシックに集積されたトランジスタ - Google Patents

バックコンバータのためのモノリシックに集積されたトランジスタ Download PDF

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JP6649890B2
JP6649890B2 JP2016549475A JP2016549475A JP6649890B2 JP 6649890 B2 JP6649890 B2 JP 6649890B2 JP 2016549475 A JP2016549475 A JP 2016549475A JP 2016549475 A JP2016549475 A JP 2016549475A JP 6649890 B2 JP6649890 B2 JP 6649890B2
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side transistor
substrate
integrated circuit
source
transistor
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JP2017510062A (ja
JP2017510062A5 (enExample
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ワン ジュン
ワン ジュン
バイオッキ フランク
バイオッキ フランク
リン ハイアン
リン ハイアン
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日本テキサス・インスツルメンツ合同会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0156—Manufacturing their doped wells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26533—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1588—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load comprising at least one synchronous rectifier element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Rectifiers (AREA)
  • Dc-Dc Converters (AREA)
JP2016549475A 2014-01-30 2015-01-30 バックコンバータのためのモノリシックに集積されたトランジスタ Active JP6649890B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461933717P 2014-01-30 2014-01-30
US61/933,717 2014-01-30
US14/608,391 US9646965B2 (en) 2014-01-30 2015-01-29 Monolithically integrated transistors for a buck converter using source down MOSFET
US14/608,391 2015-01-29
PCT/US2015/013989 WO2015117038A1 (en) 2014-01-30 2015-01-30 Monolithic ally integrated transistors for a buck converter

Publications (3)

Publication Number Publication Date
JP2017510062A JP2017510062A (ja) 2017-04-06
JP2017510062A5 JP2017510062A5 (enExample) 2018-03-08
JP6649890B2 true JP6649890B2 (ja) 2020-02-19

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Country Link
US (1) US9646965B2 (enExample)
EP (1) EP3127154B1 (enExample)
JP (1) JP6649890B2 (enExample)
CN (1) CN106104802B (enExample)
WO (1) WO2015117038A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6326858B2 (ja) * 2014-02-24 2018-05-23 セイコーエプソン株式会社 半導体装置およびその製造方法
EP3144974B1 (en) * 2015-09-18 2022-01-26 Ampleon Netherlands B.V. Semiconductor device
CN105552075B (zh) * 2016-01-22 2018-06-22 成都芯源系统有限公司 一种减少系统环路寄生电感的半导体器件
US10319712B2 (en) 2016-11-10 2019-06-11 Texas Instruments Incorporated Integrated transistor and protection diode and fabrication method
US10581426B1 (en) 2019-03-11 2020-03-03 Texas Instruments Incorporated Source down power FET with integrated temperature sensor

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4023062B2 (ja) * 2000-03-03 2007-12-19 松下電器産業株式会社 半導体装置
WO2004054078A1 (en) * 2002-12-10 2004-06-24 Koninklijke Philips Electronics N.V. Integrated half-bridge power circuit
US7074659B2 (en) 2003-11-13 2006-07-11 Volterra Semiconductor Corporation Method of fabricating a lateral double-diffused MOSFET (LDMOS) transistor
JP4212551B2 (ja) * 2003-12-18 2009-01-21 株式会社東芝 半導体集積回路装置
US7566931B2 (en) 2005-04-18 2009-07-28 Fairchild Semiconductor Corporation Monolithically-integrated buck converter
US7235845B2 (en) * 2005-08-12 2007-06-26 Ciclon Semiconductor Device Corp. Power LDMOS transistor
US7768064B2 (en) 2006-01-05 2010-08-03 Fairchild Semiconductor Corporation Structure and method for improving shielded gate field effect transistors
US7554154B2 (en) * 2006-07-28 2009-06-30 Alpha Omega Semiconductor, Ltd. Bottom source LDMOSFET structure and method
CN101378075B (zh) * 2007-08-31 2012-10-31 谭健 Ldmos及集成ldmos与cmos的半导体器件
US8026549B2 (en) 2008-10-31 2011-09-27 United Microelectronics Corp. LDMOS with N-type isolation ring and method of fabricating the same
US8168490B2 (en) * 2008-12-23 2012-05-01 Intersil Americas, Inc. Co-packaging approach for power converters based on planar devices, structure and method
US20100171543A1 (en) * 2009-01-08 2010-07-08 Ciclon Semiconductor Device Corp. Packaged power switching device
JP2011049394A (ja) * 2009-08-27 2011-03-10 Toshiba Corp 半導体装置およびその製造方法
US8362555B2 (en) 2009-11-24 2013-01-29 Intersil Americas Inc. Voltage converter and systems including same
US20110210956A1 (en) * 2010-02-26 2011-09-01 Dev Alok Girdhar Current sensor for a semiconductor device and system
JP5584090B2 (ja) 2010-10-22 2014-09-03 トランスフォーム・ジャパン株式会社 Ｄｃ−ｄｃコンバータ
JP5605241B2 (ja) * 2011-01-27 2014-10-15 富士通セミコンダクター株式会社 Ｍｏｓトランジスタおよび半導体集積回路装置の製造方法
JP2012238741A (ja) * 2011-05-12 2012-12-06 Panasonic Corp 半導体装置及びその製造方法
EP2728612A4 (en) * 2011-06-30 2015-03-11 Fuji Electric Co Ltd METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE
JP2013168487A (ja) * 2012-02-15 2013-08-29 Renesas Electronics Corp 半導体装置の製造方法および半導体装置
US20130270636A1 (en) * 2012-04-17 2013-10-17 Broadcom Corporation Transistor Having An Isolated Body For High Voltage Operation
CN103545363B (zh) * 2012-07-09 2016-04-13 上海华虹宏力半导体制造有限公司 P型ldmos器件及其制造方法
US8674440B2 (en) * 2012-07-31 2014-03-18 Io Semiconductor Inc. Power device integration on a common substrate
KR101957529B1 (ko) * 2013-06-28 2019-03-13 매그나칩 반도체 유한회사 반도체 패키지

Also Published As

Publication number Publication date
CN106104802A (zh) 2016-11-09
EP3127154A1 (en) 2017-02-08
EP3127154B1 (en) 2025-09-17
JP2017510062A (ja) 2017-04-06
US20150214222A1 (en) 2015-07-30
US9646965B2 (en) 2017-05-09
WO2015117038A1 (en) 2015-08-06
EP3127154A4 (en) 2018-01-17
CN106104802B (zh) 2019-07-23

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