JP6637312B2 - 温度管理を備えるランプヘッドを有する基板処理システム - Google Patents

温度管理を備えるランプヘッドを有する基板処理システム Download PDF

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Publication number
JP6637312B2
JP6637312B2 JP2015509061A JP2015509061A JP6637312B2 JP 6637312 B2 JP6637312 B2 JP 6637312B2 JP 2015509061 A JP2015509061 A JP 2015509061A JP 2015509061 A JP2015509061 A JP 2015509061A JP 6637312 B2 JP6637312 B2 JP 6637312B2
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Prior art keywords
lamp
passages
reflector
structural member
disposed
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Japanese (ja)
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JP2015522939A5 (enExample
JP2015522939A (ja
Inventor
ジョゼフ エム． ラニッシュ，
ジョゼフ エム． ラニッシュ，
ポール ブリルハート，
ポール ブリルハート，
サティシュ クップラオ，
サティシュ クップラオ，
トンミン イウ，
トンミン イウ，
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/0083—Array of reflectors for a cluster of light sources, e.g. arrangement of multiple light sources in one plane

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
JP2015509061A 2012-04-26 2013-04-22 温度管理を備えるランプヘッドを有する基板処理システム Active JP6637312B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201261638619P 2012-04-26 2012-04-26
US61/638,619 2012-04-26
US201261707938P 2012-09-29 2012-09-29
US61/707,938 2012-09-29
US13/865,672 2013-04-18
US13/865,672 US10202707B2 (en) 2012-04-26 2013-04-18 Substrate processing system with lamphead having temperature management
PCT/US2013/037585 WO2013163080A1 (en) 2012-04-26 2013-04-22 Substrate processing system with lamphead having temperature management

Publications (3)

Publication Number Publication Date
JP2015522939A JP2015522939A (ja) 2015-08-06
JP2015522939A5 JP2015522939A5 (enExample) 2016-06-30
JP6637312B2 true JP6637312B2 (ja) 2020-01-29

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ID=49483801

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JP2015509061A Active JP6637312B2 (ja) 2012-04-26 2013-04-22 温度管理を備えるランプヘッドを有する基板処理システム

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US (1) US10202707B2 (enExample)
JP (1) JP6637312B2 (enExample)
KR (1) KR102108408B1 (enExample)
CN (1) CN104246969B (enExample)
TW (1) TWI646298B (enExample)
WO (1) WO2013163080A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107546157A (zh) * 2013-11-22 2018-01-05 应用材料公司 易取灯头
US10053777B2 (en) * 2014-03-19 2018-08-21 Applied Materials, Inc. Thermal processing chamber
CN107620893A (zh) * 2017-08-31 2018-01-23 江苏米优光电科技有限公司 一种透气散热型户外全彩led贴片灯组及其生产工艺
KR102699383B1 (ko) 2019-04-18 2024-08-26 삼성전자주식회사 웨이퍼 클리닝 장치
US11680338B2 (en) * 2019-12-19 2023-06-20 Applied Materials, Inc. Linear lamp array for improved thermal uniformity and profile control
US12091749B2 (en) 2021-05-11 2024-09-17 Applied Materials, Inc. Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet
KR102811576B1 (ko) * 2021-05-11 2025-05-22 어플라이드 머티어리얼스, 인코포레이티드 에피택시 및 cvd 챔버용 가스 인젝터
US12060651B2 (en) 2021-05-11 2024-08-13 Applied Materials, Inc. Chamber architecture for epitaxial deposition and advanced epitaxial film applications
US20220367216A1 (en) * 2021-05-11 2022-11-17 Applied Materials, Inc. Multi-zone lamp heating and temperature monitoring in epitaxy process chamber
US12018372B2 (en) 2021-05-11 2024-06-25 Applied Materials, Inc. Gas injector for epitaxy and CVD chamber
JP7667310B2 (ja) * 2021-06-09 2025-04-22 アプライド マテリアルズ インコーポレイテッド 両口金形ランプを用いた軸対称加熱アセンブリレイアウト
CN115161764B (zh) * 2022-06-23 2024-02-06 江苏天芯微半导体设备有限公司 一种控温装置及其外延设备

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US5156820A (en) * 1989-05-15 1992-10-20 Rapro Technology, Inc. Reaction chamber with controlled radiant energy heating and distributed reactant flow
US5002630A (en) 1989-06-06 1991-03-26 Rapro Technology Method for high temperature thermal processing with reduced convective heat loss
US5108792A (en) 1990-03-09 1992-04-28 Applied Materials, Inc. Double-dome reactor for semiconductor processing
JPH04297581A (ja) 1991-03-15 1992-10-21 Mitsubishi Electric Corp 光気相成長装置
JPH0845863A (ja) 1994-07-27 1996-02-16 Touyoko Kagaku Kk 半導体基板の枚葉式熱処理装置
JPH09237763A (ja) 1996-02-28 1997-09-09 Tokyo Electron Ltd 枚葉式の熱処理装置
TW315493B (en) * 1996-02-28 1997-09-11 Tokyo Electron Co Ltd Heating apparatus and heat treatment apparatus
JP3616687B2 (ja) 1996-03-04 2005-02-02 東洋製罐株式会社 耐熱耐圧性に優れた自立性容器
US6007635A (en) * 1997-11-26 1999-12-28 Micro C Technologies, Inc. Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
JP3438658B2 (ja) * 1999-07-22 2003-08-18 ウシオ電機株式会社 ランプユニット及び光照射式加熱装置
JP2005222962A (ja) * 2000-04-20 2005-08-18 Tokyo Electron Ltd 熱処理装置及びその方法
WO2001082348A1 (en) 2000-04-20 2001-11-01 Tokyo Electron Limited Thermal processing system
US6476362B1 (en) * 2000-09-12 2002-11-05 Applied Materials, Inc. Lamp array for thermal processing chamber
JP2002270532A (ja) 2001-03-14 2002-09-20 Tokyo Electron Ltd 加熱装置及び熱処理装置
US7075037B2 (en) 2001-03-02 2006-07-11 Tokyo Electron Limited Heat treatment apparatus using a lamp for rapidly and uniformly heating a wafer
JP2002270533A (ja) 2001-03-14 2002-09-20 Tokyo Electron Ltd 熱処理装置及びランプ出力制御方法
JP2003022982A (ja) 2001-07-09 2003-01-24 Tokyo Electron Ltd 熱処理装置
US6818864B2 (en) * 2002-08-09 2004-11-16 Asm America, Inc. LED heat lamp arrays for CVD heating
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US8314368B2 (en) * 2008-02-22 2012-11-20 Applied Materials, Inc. Silver reflectors for semiconductor processing chambers
JP5169299B2 (ja) 2008-02-22 2013-03-27 株式会社デンソー 半導体製造装置
KR101458001B1 (ko) 2008-06-17 2014-11-04 주성엔지니어링(주) 기판 처리 장치
US8294068B2 (en) * 2008-09-10 2012-10-23 Applied Materials, Inc. Rapid thermal processing lamphead with improved cooling
KR20120054636A (ko) 2009-08-18 2012-05-30 도쿄엘렉트론가부시키가이샤 열처리장치

Also Published As

Publication number Publication date
WO2013163080A1 (en) 2013-10-31
US10202707B2 (en) 2019-02-12
CN104246969A (zh) 2014-12-24
CN104246969B (zh) 2019-06-11
TWI646298B (zh) 2019-01-01
KR20150003841A (ko) 2015-01-09
KR102108408B1 (ko) 2020-05-08
JP2015522939A (ja) 2015-08-06
US20130298832A1 (en) 2013-11-14
TW201350778A (zh) 2013-12-16

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