CN104246969B - 装备有具有温度管理的灯头的基板处理系统 - Google Patents

装备有具有温度管理的灯头的基板处理系统 Download PDF

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Publication number
CN104246969B
CN104246969B CN201380021316.2A CN201380021316A CN104246969B CN 104246969 B CN104246969 B CN 104246969B CN 201380021316 A CN201380021316 A CN 201380021316A CN 104246969 B CN104246969 B CN 104246969B
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CN
China
Prior art keywords
lamp
reflection cavity
monolithic elements
lamp cap
channel
Prior art date
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CN201380021316.2A
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English (en)
Chinese (zh)
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CN104246969A (zh
Inventor
约瑟夫·M·拉内什
保罗·布里尔哈特
萨瑟施·库珀奥
东明·尤
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Applied Materials Inc
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Applied Materials Inc
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/0083—Array of reflectors for a cluster of light sources, e.g. arrangement of multiple light sources in one plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H10P95/902—Thermal treatments, e.g. annealing or sintering for the formation of PN junctions without addition of impurities

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
CN201380021316.2A 2012-04-26 2013-04-22 装备有具有温度管理的灯头的基板处理系统 Active CN104246969B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201261638619P 2012-04-26 2012-04-26
US61/638,619 2012-04-26
US201261707938P 2012-09-29 2012-09-29
US61/707,938 2012-09-29
US13/865,672 US10202707B2 (en) 2012-04-26 2013-04-18 Substrate processing system with lamphead having temperature management
US13/865,672 2013-04-18
PCT/US2013/037585 WO2013163080A1 (en) 2012-04-26 2013-04-22 Substrate processing system with lamphead having temperature management

Publications (2)

Publication Number Publication Date
CN104246969A CN104246969A (zh) 2014-12-24
CN104246969B true CN104246969B (zh) 2019-06-11

Family

ID=49483801

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380021316.2A Active CN104246969B (zh) 2012-04-26 2013-04-22 装备有具有温度管理的灯头的基板处理系统

Country Status (6)

Country Link
US (1) US10202707B2 (enExample)
JP (1) JP6637312B2 (enExample)
KR (1) KR102108408B1 (enExample)
CN (1) CN104246969B (enExample)
TW (1) TWI646298B (enExample)
WO (1) WO2013163080A1 (enExample)

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KR102228941B1 (ko) * 2013-11-22 2021-03-17 어플라이드 머티어리얼스, 인코포레이티드 접근이 용이한 램프헤드
US10053777B2 (en) * 2014-03-19 2018-08-21 Applied Materials, Inc. Thermal processing chamber
CN107620893A (zh) * 2017-08-31 2018-01-23 江苏米优光电科技有限公司 一种透气散热型户外全彩led贴片灯组及其生产工艺
KR102699383B1 (ko) 2019-04-18 2024-08-26 삼성전자주식회사 웨이퍼 클리닝 장치
US11680338B2 (en) * 2019-12-19 2023-06-20 Applied Materials, Inc. Linear lamp array for improved thermal uniformity and profile control
KR20250075736A (ko) * 2021-05-11 2025-05-28 어플라이드 머티어리얼스, 인코포레이티드 에피택시 및 cvd 챔버용 가스 인젝터
US12660554B2 (en) * 2021-05-11 2026-06-16 Applied Materials, Inc. Lamp heating module for an epitaxy process chamber
US12091749B2 (en) 2021-05-11 2024-09-17 Applied Materials, Inc. Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet
US12018372B2 (en) 2021-05-11 2024-06-25 Applied Materials, Inc. Gas injector for epitaxy and CVD chamber
US12060651B2 (en) 2021-05-11 2024-08-13 Applied Materials, Inc. Chamber architecture for epitaxial deposition and advanced epitaxial film applications
JP7667310B2 (ja) * 2021-06-09 2025-04-22 アプライド マテリアルズ インコーポレイテッド 両口金形ランプを用いた軸対称加熱アセンブリレイアウト
CN115274491A (zh) * 2022-04-22 2022-11-01 江苏天芯微半导体设备有限公司 一种控温组件及衬底处理设备
CN115161764B (zh) * 2022-06-23 2024-02-06 江苏天芯微半导体设备有限公司 一种控温装置及其外延设备
US20250132175A1 (en) * 2023-10-18 2025-04-24 Applied Materials, Inc. Actively controlled window for epitaxial deposition process temperature control

Citations (4)

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US4047496A (en) * 1974-05-31 1977-09-13 Applied Materials, Inc. Epitaxial radiation heated reactor
US6121579A (en) * 1996-02-28 2000-09-19 Tokyo Electron Limited Heating apparatus, and processing apparatus
CN101231941A (zh) * 2007-01-15 2008-07-30 应用材料股份有限公司 热处理腔中的晶圆支架的温度测量和控制
CN102150248A (zh) * 2008-09-10 2011-08-10 应用材料股份有限公司 冷却改进的快速热处理灯头

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JPH09237763A (ja) 1996-02-28 1997-09-09 Tokyo Electron Ltd 枚葉式の熱処理装置
JP3616687B2 (ja) 1996-03-04 2005-02-02 東洋製罐株式会社 耐熱耐圧性に優れた自立性容器
US6007635A (en) * 1997-11-26 1999-12-28 Micro C Technologies, Inc. Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
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JP5049443B2 (ja) 2000-04-20 2012-10-17 東京エレクトロン株式会社 熱処理システム
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* Cited by examiner, † Cited by third party
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US4047496A (en) * 1974-05-31 1977-09-13 Applied Materials, Inc. Epitaxial radiation heated reactor
US6121579A (en) * 1996-02-28 2000-09-19 Tokyo Electron Limited Heating apparatus, and processing apparatus
CN101231941A (zh) * 2007-01-15 2008-07-30 应用材料股份有限公司 热处理腔中的晶圆支架的温度测量和控制
CN102150248A (zh) * 2008-09-10 2011-08-10 应用材料股份有限公司 冷却改进的快速热处理灯头

Also Published As

Publication number Publication date
KR102108408B1 (ko) 2020-05-08
TW201350778A (zh) 2013-12-16
TWI646298B (zh) 2019-01-01
US20130298832A1 (en) 2013-11-14
KR20150003841A (ko) 2015-01-09
JP2015522939A (ja) 2015-08-06
CN104246969A (zh) 2014-12-24
US10202707B2 (en) 2019-02-12
WO2013163080A1 (en) 2013-10-31
JP6637312B2 (ja) 2020-01-29

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