TWI646298B - 裝備有具有溫度管理之燈頭的基板處理系統 - Google Patents
裝備有具有溫度管理之燈頭的基板處理系統 Download PDFInfo
- Publication number
- TWI646298B TWI646298B TW102115084A TW102115084A TWI646298B TW I646298 B TWI646298 B TW I646298B TW 102115084 A TW102115084 A TW 102115084A TW 102115084 A TW102115084 A TW 102115084A TW I646298 B TWI646298 B TW I646298B
- Authority
- TW
- Taiwan
- Prior art keywords
- lamp
- mirror
- channels
- monolithic element
- dome
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 80
- 239000000758 substrate Substances 0.000 title claims abstract description 57
- 238000001816 cooling Methods 0.000 claims description 26
- 239000012530 fluid Substances 0.000 claims description 18
- 238000012546 transfer Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 description 19
- 238000000034 method Methods 0.000 description 14
- 239000007789 gas Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 7
- 239000007787 solid Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000110 cooling liquid Substances 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical class [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229920003051 synthetic elastomer Polymers 0.000 description 2
- 239000005061 synthetic rubber Substances 0.000 description 2
- HGMYRFJAJNYBRX-UHFFFAOYSA-N 1,2,3,5-tetrachloro-4-(2,3,6-trichlorophenyl)benzene Chemical compound ClC1=CC=C(Cl)C(C=2C(=C(Cl)C(Cl)=CC=2Cl)Cl)=C1Cl HGMYRFJAJNYBRX-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- QCDFBFJGMNKBDO-UHFFFAOYSA-N Clioquinol Chemical compound C1=CN=C2C(O)=C(I)C=C(Cl)C2=C1 QCDFBFJGMNKBDO-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000003289 ascorbyl group Chemical class [H]O[C@@]([H])(C([H])([H])O*)[C@@]1([H])OC(=O)C(O*)=C1O* 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002443 hydroxylamines Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000005374 membrane filtration Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000001648 tannin Substances 0.000 description 1
- 235000018553 tannin Nutrition 0.000 description 1
- 229920001864 tannin Polymers 0.000 description 1
- 238000009849 vacuum degassing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/0083—Array of reflectors for a cluster of light sources, e.g. arrangement of multiple light sources in one plane
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261638619P | 2012-04-26 | 2012-04-26 | |
| US61/638,619 | 2012-04-26 | ||
| US201261707938P | 2012-09-29 | 2012-09-29 | |
| US61/707,938 | 2012-09-29 | ||
| US13/865,672 | 2013-04-18 | ||
| US13/865,672 US10202707B2 (en) | 2012-04-26 | 2013-04-18 | Substrate processing system with lamphead having temperature management |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201350778A TW201350778A (zh) | 2013-12-16 |
| TWI646298B true TWI646298B (zh) | 2019-01-01 |
Family
ID=49483801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102115084A TWI646298B (zh) | 2012-04-26 | 2013-04-26 | 裝備有具有溫度管理之燈頭的基板處理系統 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10202707B2 (enExample) |
| JP (1) | JP6637312B2 (enExample) |
| KR (1) | KR102108408B1 (enExample) |
| CN (1) | CN104246969B (enExample) |
| TW (1) | TWI646298B (enExample) |
| WO (1) | WO2013163080A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107546157A (zh) * | 2013-11-22 | 2018-01-05 | 应用材料公司 | 易取灯头 |
| US10053777B2 (en) * | 2014-03-19 | 2018-08-21 | Applied Materials, Inc. | Thermal processing chamber |
| CN107620893A (zh) * | 2017-08-31 | 2018-01-23 | 江苏米优光电科技有限公司 | 一种透气散热型户外全彩led贴片灯组及其生产工艺 |
| KR102699383B1 (ko) | 2019-04-18 | 2024-08-26 | 삼성전자주식회사 | 웨이퍼 클리닝 장치 |
| US11680338B2 (en) * | 2019-12-19 | 2023-06-20 | Applied Materials, Inc. | Linear lamp array for improved thermal uniformity and profile control |
| US12091749B2 (en) | 2021-05-11 | 2024-09-17 | Applied Materials, Inc. | Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet |
| KR102811576B1 (ko) * | 2021-05-11 | 2025-05-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 에피택시 및 cvd 챔버용 가스 인젝터 |
| US12060651B2 (en) | 2021-05-11 | 2024-08-13 | Applied Materials, Inc. | Chamber architecture for epitaxial deposition and advanced epitaxial film applications |
| US20220367216A1 (en) * | 2021-05-11 | 2022-11-17 | Applied Materials, Inc. | Multi-zone lamp heating and temperature monitoring in epitaxy process chamber |
| US12018372B2 (en) | 2021-05-11 | 2024-06-25 | Applied Materials, Inc. | Gas injector for epitaxy and CVD chamber |
| JP7667310B2 (ja) * | 2021-06-09 | 2025-04-22 | アプライド マテリアルズ インコーポレイテッド | 両口金形ランプを用いた軸対称加熱アセンブリレイアウト |
| CN115161764B (zh) * | 2022-06-23 | 2024-02-06 | 江苏天芯微半导体设备有限公司 | 一种控温装置及其外延设备 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0845863A (ja) * | 1994-07-27 | 1996-02-16 | Touyoko Kagaku Kk | 半導体基板の枚葉式熱処理装置 |
| TW200945477A (en) * | 2008-02-22 | 2009-11-01 | Applied Materials Inc | Silver reflectors for semiconductor processing chambers |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4047496A (en) * | 1974-05-31 | 1977-09-13 | Applied Materials, Inc. | Epitaxial radiation heated reactor |
| US5156820A (en) * | 1989-05-15 | 1992-10-20 | Rapro Technology, Inc. | Reaction chamber with controlled radiant energy heating and distributed reactant flow |
| US5002630A (en) | 1989-06-06 | 1991-03-26 | Rapro Technology | Method for high temperature thermal processing with reduced convective heat loss |
| US5108792A (en) | 1990-03-09 | 1992-04-28 | Applied Materials, Inc. | Double-dome reactor for semiconductor processing |
| JPH04297581A (ja) | 1991-03-15 | 1992-10-21 | Mitsubishi Electric Corp | 光気相成長装置 |
| JPH09237763A (ja) | 1996-02-28 | 1997-09-09 | Tokyo Electron Ltd | 枚葉式の熱処理装置 |
| TW315493B (en) * | 1996-02-28 | 1997-09-11 | Tokyo Electron Co Ltd | Heating apparatus and heat treatment apparatus |
| JP3616687B2 (ja) | 1996-03-04 | 2005-02-02 | 東洋製罐株式会社 | 耐熱耐圧性に優れた自立性容器 |
| US6007635A (en) * | 1997-11-26 | 1999-12-28 | Micro C Technologies, Inc. | Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing |
| JP3438658B2 (ja) * | 1999-07-22 | 2003-08-18 | ウシオ電機株式会社 | ランプユニット及び光照射式加熱装置 |
| JP2005222962A (ja) * | 2000-04-20 | 2005-08-18 | Tokyo Electron Ltd | 熱処理装置及びその方法 |
| WO2001082348A1 (en) | 2000-04-20 | 2001-11-01 | Tokyo Electron Limited | Thermal processing system |
| US6476362B1 (en) * | 2000-09-12 | 2002-11-05 | Applied Materials, Inc. | Lamp array for thermal processing chamber |
| JP2002270532A (ja) | 2001-03-14 | 2002-09-20 | Tokyo Electron Ltd | 加熱装置及び熱処理装置 |
| US7075037B2 (en) | 2001-03-02 | 2006-07-11 | Tokyo Electron Limited | Heat treatment apparatus using a lamp for rapidly and uniformly heating a wafer |
| JP2002270533A (ja) | 2001-03-14 | 2002-09-20 | Tokyo Electron Ltd | 熱処理装置及びランプ出力制御方法 |
| JP2003022982A (ja) | 2001-07-09 | 2003-01-24 | Tokyo Electron Ltd | 熱処理装置 |
| US6818864B2 (en) * | 2002-08-09 | 2004-11-16 | Asm America, Inc. | LED heat lamp arrays for CVD heating |
| US7691204B2 (en) * | 2005-09-30 | 2010-04-06 | Applied Materials, Inc. | Film formation apparatus and methods including temperature and emissivity/pattern compensation |
| US20080072820A1 (en) * | 2006-06-30 | 2008-03-27 | Applied Materials, Inc. | Modular cvd epi 300mm reactor |
| US7860379B2 (en) * | 2007-01-15 | 2010-12-28 | Applied Materials, Inc. | Temperature measurement and control of wafer support in thermal processing chamber |
| JP5169299B2 (ja) | 2008-02-22 | 2013-03-27 | 株式会社デンソー | 半導体製造装置 |
| KR101458001B1 (ko) | 2008-06-17 | 2014-11-04 | 주성엔지니어링(주) | 기판 처리 장치 |
| US8294068B2 (en) * | 2008-09-10 | 2012-10-23 | Applied Materials, Inc. | Rapid thermal processing lamphead with improved cooling |
| KR20120054636A (ko) | 2009-08-18 | 2012-05-30 | 도쿄엘렉트론가부시키가이샤 | 열처리장치 |
-
2013
- 2013-04-18 US US13/865,672 patent/US10202707B2/en active Active
- 2013-04-22 WO PCT/US2013/037585 patent/WO2013163080A1/en not_active Ceased
- 2013-04-22 KR KR1020147032448A patent/KR102108408B1/ko active Active
- 2013-04-22 CN CN201380021316.2A patent/CN104246969B/zh active Active
- 2013-04-22 JP JP2015509061A patent/JP6637312B2/ja active Active
- 2013-04-26 TW TW102115084A patent/TWI646298B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0845863A (ja) * | 1994-07-27 | 1996-02-16 | Touyoko Kagaku Kk | 半導体基板の枚葉式熱処理装置 |
| TW200945477A (en) * | 2008-02-22 | 2009-11-01 | Applied Materials Inc | Silver reflectors for semiconductor processing chambers |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013163080A1 (en) | 2013-10-31 |
| US10202707B2 (en) | 2019-02-12 |
| CN104246969A (zh) | 2014-12-24 |
| CN104246969B (zh) | 2019-06-11 |
| KR20150003841A (ko) | 2015-01-09 |
| KR102108408B1 (ko) | 2020-05-08 |
| JP2015522939A (ja) | 2015-08-06 |
| US20130298832A1 (en) | 2013-11-14 |
| TW201350778A (zh) | 2013-12-16 |
| JP6637312B2 (ja) | 2020-01-29 |
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