TWI646298B - 裝備有具有溫度管理之燈頭的基板處理系統 - Google Patents

裝備有具有溫度管理之燈頭的基板處理系統 Download PDF

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Publication number
TWI646298B
TWI646298B TW102115084A TW102115084A TWI646298B TW I646298 B TWI646298 B TW I646298B TW 102115084 A TW102115084 A TW 102115084A TW 102115084 A TW102115084 A TW 102115084A TW I646298 B TWI646298 B TW I646298B
Authority
TW
Taiwan
Prior art keywords
lamp
mirror
channels
monolithic element
dome
Prior art date
Application number
TW102115084A
Other languages
English (en)
Chinese (zh)
Other versions
TW201350778A (zh
Inventor
拉尼許喬瑟夫Ｍ
Joseph M. Ranish
布里哈特保羅
Paul Brillhart
古波若沙堤西
Satheesh Kuppurao
姚東明
Dongming IU
Original Assignee
美商應用材料股份有限公司
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商應用材料股份有限公司, Applied Materials, Inc. filed Critical 美商應用材料股份有限公司
Publication of TW201350778A publication Critical patent/TW201350778A/zh
Application granted granted Critical
Publication of TWI646298B publication Critical patent/TWI646298B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V7/00—Reflectors for light sources
    • F21V7/0083—Array of reflectors for a cluster of light sources, e.g. arrangement of multiple light sources in one plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H10P95/902—Thermal treatments, e.g. annealing or sintering for the formation of PN junctions without addition of impurities

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
TW102115084A 2012-04-26 2013-04-26 裝備有具有溫度管理之燈頭的基板處理系統 TWI646298B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201261638619P 2012-04-26 2012-04-26
US61/638,619 2012-04-26
US201261707938P 2012-09-29 2012-09-29
US61/707,938 2012-09-29
US13/865,672 US10202707B2 (en) 2012-04-26 2013-04-18 Substrate processing system with lamphead having temperature management
US13/865,672 2013-04-18

Publications (2)

Publication Number Publication Date
TW201350778A TW201350778A (zh) 2013-12-16
TWI646298B true TWI646298B (zh) 2019-01-01

Family

ID=49483801

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102115084A TWI646298B (zh) 2012-04-26 2013-04-26 裝備有具有溫度管理之燈頭的基板處理系統

Country Status (6)

Country Link
US (1) US10202707B2 (enExample)
JP (1) JP6637312B2 (enExample)
KR (1) KR102108408B1 (enExample)
CN (1) CN104246969B (enExample)
TW (1) TWI646298B (enExample)
WO (1) WO2013163080A1 (enExample)

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KR102228941B1 (ko) * 2013-11-22 2021-03-17 어플라이드 머티어리얼스, 인코포레이티드 접근이 용이한 램프헤드
US10053777B2 (en) * 2014-03-19 2018-08-21 Applied Materials, Inc. Thermal processing chamber
CN107620893A (zh) * 2017-08-31 2018-01-23 江苏米优光电科技有限公司 一种透气散热型户外全彩led贴片灯组及其生产工艺
KR102699383B1 (ko) 2019-04-18 2024-08-26 삼성전자주식회사 웨이퍼 클리닝 장치
US11680338B2 (en) * 2019-12-19 2023-06-20 Applied Materials, Inc. Linear lamp array for improved thermal uniformity and profile control
KR20250075736A (ko) * 2021-05-11 2025-05-28 어플라이드 머티어리얼스, 인코포레이티드 에피택시 및 cvd 챔버용 가스 인젝터
US12660554B2 (en) * 2021-05-11 2026-06-16 Applied Materials, Inc. Lamp heating module for an epitaxy process chamber
US12091749B2 (en) 2021-05-11 2024-09-17 Applied Materials, Inc. Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet
US12018372B2 (en) 2021-05-11 2024-06-25 Applied Materials, Inc. Gas injector for epitaxy and CVD chamber
US12060651B2 (en) 2021-05-11 2024-08-13 Applied Materials, Inc. Chamber architecture for epitaxial deposition and advanced epitaxial film applications
JP7667310B2 (ja) * 2021-06-09 2025-04-22 アプライド マテリアルズ インコーポレイテッド 両口金形ランプを用いた軸対称加熱アセンブリレイアウト
CN115274491A (zh) * 2022-04-22 2022-11-01 江苏天芯微半导体设备有限公司 一种控温组件及衬底处理设备
CN115161764B (zh) * 2022-06-23 2024-02-06 江苏天芯微半导体设备有限公司 一种控温装置及其外延设备
US20250132175A1 (en) * 2023-10-18 2025-04-24 Applied Materials, Inc. Actively controlled window for epitaxial deposition process temperature control

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JPH0845863A (ja) * 1994-07-27 1996-02-16 Touyoko Kagaku Kk 半導体基板の枚葉式熱処理装置
TW200945477A (en) * 2008-02-22 2009-11-01 Applied Materials Inc Silver reflectors for semiconductor processing chambers

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TW200945477A (en) * 2008-02-22 2009-11-01 Applied Materials Inc Silver reflectors for semiconductor processing chambers

Also Published As

Publication number Publication date
KR102108408B1 (ko) 2020-05-08
TW201350778A (zh) 2013-12-16
US20130298832A1 (en) 2013-11-14
KR20150003841A (ko) 2015-01-09
CN104246969B (zh) 2019-06-11
JP2015522939A (ja) 2015-08-06
CN104246969A (zh) 2014-12-24
US10202707B2 (en) 2019-02-12
WO2013163080A1 (en) 2013-10-31
JP6637312B2 (ja) 2020-01-29

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