JP6578352B2 - 低圧熱処理のためのライトパイプ構造ウインドウ - Google Patents
低圧熱処理のためのライトパイプ構造ウインドウ Download PDFInfo
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- JP6578352B2 JP6578352B2 JP2017514259A JP2017514259A JP6578352B2 JP 6578352 B2 JP6578352 B2 JP 6578352B2 JP 2017514259 A JP2017514259 A JP 2017514259A JP 2017514259 A JP2017514259 A JP 2017514259A JP 6578352 B2 JP6578352 B2 JP 6578352B2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/04—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres
- G02B6/06—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres the relative position of the fibres being the same at both ends, e.g. for transporting images
- G02B6/08—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings formed by bundles of fibres the relative position of the fibres being the same at both ends, e.g. for transporting images with fibre bundle in form of plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
- H05B3/0047—Heating devices using lamps for industrial applications for semiconductor manufacture
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- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
Description
Claims (15)
- 熱処理チャンバ内で使用するためのライトパイプウインドウ構造物であって、
透明プレートと、
前記透明プレートに連結されたハウジングと、
前記透明プレートと前記ハウジングとの間に挟まれた透明体に形成された複数の開口であって、前記複数の開口の各々がライトパイプ構造物を備え、前記ライトパイプ構造物の各々が、各開口の内表面をライニングし且つ前記透明プレートの頂面によって画定された平面に関して実質的に垂直に配置された長手方向軸を有する反射面を備える、複数の開口と、
温度センサと連結して用いられる、前記透明体から延びる透明ロッドと、
を備える、ライトパイプウインドウ構造物。 - 前記透明プレートと接合され、前記複数のライトパイプ構造物を囲んでいるリテーナを更に備え、前記リテーナは密封された内空間を備える、請求項1に記載のライトパイプウインドウ構造物。
- 前記透明プレートは、前記複数の開口を囲む部位より薄い凹部を含む、請求項1に記載のライトパイプウインドウ構造物。
- 前記ライトパイプ構造物の各々は円形状を備える、請求項1に記載のライトパイプウインドウ構造物。
- 前記ライトパイプ構造物の各々は多角形状を備える、請求項1に記載のライトパイプウインドウ構造物。
- 前記ハウジングは、前記透明体に形成された前記開口と実質的に位置が合っている開口を有する、請求項1に記載のライトパイプウインドウ構造物。
- 前記ハウジングは導電性材料を含む、請求項1に記載のライトパイプウインドウ構造物。
- 前記反射面は反射コーティングを備える、請求項1に記載のライトパイプウインドウ構造物。
- 前記反射面は反射材料で作製されたチューブ状スリーブを備える、請求項1に記載のライトパイプウインドウ構造物。
- 熱処理チャンバ内で使用するためのランプヘッドアセンブリであって、
ライトパイプウインドウ構造物と、
前記ライトパイプウインドウ構造物に連結された放射熱源とを備え、
前記ライトパイプウインドウ構造物は、
透明プレートと、
前記透明プレートに連結されたハウジングと、
前記透明プレートと前記ハウジングとの間に挟まれた透明体に形成された複数の開口であって、前記複数の開口の各々がライトパイプ構造物を備える、複数の開口と、
温度センサと連結して用いられる、前記透明体から延びる透明ロッドと、
を含み、
前記放射熱源は、複数のチューブであって、その各々が、内部に配置されたエネルギー源を有し、かつ、前記ライトパイプ構造物のうちの1つと実質的に位置合わせされている複数のチューブを備える、ランプヘッドアセンブリ。 - 前記複数のライトパイプ構造物の少なくとも一部分は、各開口の内表面をライニングし且つ前記透明プレートの頂面によって画定された平面に対して実質的に垂直に配置された長手方向軸を有する反射面を含む、請求項10に記載のランプヘッドアセンブリ。
- 前記反射面は反射材料で作製されたチューブ状スリーブを備える、請求項11に記載のランプヘッドアセンブリ。
- 前記反射面は反射コーティングを備える、請求項11に記載のランプヘッドアセンブリ。
- 前記ライトパイプ構造物の各々は円形状を備える、請求項10に記載のランプヘッドアセンブリ。
- 前記ライトパイプ構造物の各々は多角形状を備える、請求項10に記載のランプヘッドアセンブリ。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US201462002649P | 2014-05-23 | 2014-05-23 | |
US62/002,649 | 2014-05-23 | ||
US14/645,883 US10727093B2 (en) | 2014-05-23 | 2015-03-12 | Light pipe window structure for low pressure thermal processes |
US14/645,883 | 2015-03-12 | ||
PCT/US2015/024735 WO2015179032A1 (en) | 2014-05-23 | 2015-04-07 | Light pipe structure window for low pressure thermal processes |
Publications (2)
Publication Number | Publication Date |
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JP2017521874A JP2017521874A (ja) | 2017-08-03 |
JP6578352B2 true JP6578352B2 (ja) | 2019-09-18 |
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JP2017514259A Active JP6578352B2 (ja) | 2014-05-23 | 2015-04-07 | 低圧熱処理のためのライトパイプ構造ウインドウ |
Country Status (7)
Country | Link |
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US (1) | US10727093B2 (ja) |
JP (1) | JP6578352B2 (ja) |
KR (1) | KR102343692B1 (ja) |
CN (1) | CN106463399B (ja) |
SG (1) | SG11201608335QA (ja) |
TW (2) | TWI722548B (ja) |
WO (1) | WO2015179032A1 (ja) |
Families Citing this family (9)
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US10410890B2 (en) * | 2013-06-21 | 2019-09-10 | Applied Materials, Inc. | Light pipe window structure for thermal chamber applications and processes |
US10475674B2 (en) * | 2015-03-25 | 2019-11-12 | SCREEN Holdings Co., Ltd. | Light irradiation type heat treatment apparatus and method for manufacturing heat treatment apparatus |
JP6587955B2 (ja) * | 2016-02-24 | 2019-10-09 | 株式会社Screenホールディングス | 熱処理装置 |
JP6847610B2 (ja) * | 2016-09-14 | 2021-03-24 | 株式会社Screenホールディングス | 熱処理装置 |
US10573498B2 (en) | 2017-01-09 | 2020-02-25 | Applied Materials, Inc. | Substrate processing apparatus including annular lamp assembly |
US10720348B2 (en) * | 2018-05-18 | 2020-07-21 | Applied Materials, Inc. | Dual load lock chamber |
US12033874B2 (en) * | 2020-09-03 | 2024-07-09 | Applied Materials, Inc. | EPI chamber with full wafer laser heating |
JP7546417B2 (ja) * | 2020-09-09 | 2024-09-06 | 株式会社Screenホールディングス | 熱処理装置 |
US20220367216A1 (en) * | 2021-05-11 | 2022-11-17 | Applied Materials, Inc. | Multi-zone lamp heating and temperature monitoring in epitaxy process chamber |
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US10727093B2 (en) | 2020-07-28 |
TW202025304A (zh) | 2020-07-01 |
TWI722548B (zh) | 2021-03-21 |
KR102343692B1 (ko) | 2021-12-28 |
TWI703636B (zh) | 2020-09-01 |
US20150340257A1 (en) | 2015-11-26 |
JP2017521874A (ja) | 2017-08-03 |
WO2015179032A1 (en) | 2015-11-26 |
KR20170008834A (ko) | 2017-01-24 |
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TW201601217A (zh) | 2016-01-01 |
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