JP6631467B2 - 二酸化炭素還元装置 - Google Patents
二酸化炭素還元装置 Download PDFInfo
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- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 title claims description 107
- 229910002092 carbon dioxide Inorganic materials 0.000 title claims description 53
- 239000001569 carbon dioxide Substances 0.000 title claims description 53
- 238000006722 reduction reaction Methods 0.000 claims description 111
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 56
- 229910021389 graphene Inorganic materials 0.000 claims description 55
- 238000007254 oxidation reaction Methods 0.000 claims description 52
- 230000003647 oxidation Effects 0.000 claims description 47
- -1 hydrogen ions Chemical class 0.000 claims description 21
- 239000003792 electrolyte Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 239000008151 electrolyte solution Substances 0.000 claims description 14
- 150000001722 carbon compounds Chemical class 0.000 claims description 10
- 230000000694 effects Effects 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims description 8
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 description 21
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 12
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- 239000010953 base metal Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 230000003213 activating effect Effects 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 5
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical class [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 2
- 235000015497 potassium bicarbonate Nutrition 0.000 description 2
- 239000011736 potassium bicarbonate Substances 0.000 description 2
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 2
- 229940086066 potassium hydrogencarbonate Drugs 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229920000557 Nafion® Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004577 artificial photosynthesis Methods 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000003411 electrode reaction Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 125000002883 imidazolyl group Chemical group 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/24—Nitrogen compounds
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/50—Carbon dioxide
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
- C25B1/02—Hydrogen or oxygen
- C25B1/04—Hydrogen or oxygen by electrolysis of water
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/04—Electrodes; Manufacture thereof not otherwise provided for characterised by the material
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B3/00—Electrolytic production of organic compounds
- C25B3/20—Processes
- C25B3/25—Reduction
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B9/00—Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B9/00—Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
- C25B9/60—Constructional parts of cells
- C25B9/65—Means for supplying current; Electrode connections; Electric inter-cell connections
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B9/00—Cells or assemblies of cells; Constructional parts of cells; Assemblies of constructional parts, e.g. electrode-diaphragm assemblies; Process-related cell features
- C25B9/70—Assemblies comprising two or more cells
- C25B9/73—Assemblies comprising two or more cells of the filter-press type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
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- Electrochemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
- Carbon And Carbon Compounds (AREA)
- Catalysts (AREA)
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
Description
本発明の第1実施形態に係る二酸化炭素還元装置1について説明する。本実施形態の二酸化炭素還元装置1は、太陽光を照射することで酸素生成、水素生成および炭素化合物(メタノール等)生成を行う人工光合成装置として構成されている。
酸化電極13側で発生した水素イオンは、電解液11中を還元電極14側に移動し、二酸化炭素の還元反応に用いられる。
2H++2e-→H2
本実施形態では、還元電極14に窒素ドープグラフェンを用いることで、以下の効果を得ることができる。すなわち、窒素ドープグラフェンに存在する窒素含有芳香族構造(例えばピリジン構造)によって、窒素含有芳香族化合物(例えばピリジン)と同様に、二酸化炭素を活性化することができる。このため、本実施形態の構成によれば、窒素含有芳香族化合物を用いることなく、還元電極14の表面で二酸化炭素を吸着して活性化することができる。また、窒素含有芳香族化合物を用いた場合のように、窒素含有芳香族化合物と一体化した二酸化炭素が還元電極14まで移動する必要がなく、二酸化炭素から高効率で炭素化合物を生成することができる。
以下、本発明の第2実施形態について説明する。本第2実施形態は、上記第1実施形態と比較して、PVセル12、酸化電極13、還元電極14の構成が異なっている。以下、上記第1実施形態と同様の部分については説明を省略し、異なる部分についてのみ説明する。
以下、本発明の第3実施形態について説明する。本第3実施形態は、上記第1実施形態と比較して、PVセル12、酸化電極13、還元電極14の構成が異なっている。以下、上記各実施形態と同様の部分については説明を省略し、異なる部分についてのみ説明する。
以下、本発明の第4実施形態について説明する。本第4実施形態は、上記第1実施形態と比較して、PVセル12、酸化電極13、還元電極14の構成が異なっている。以下、上記各実施形態と同様の部分については説明を省略し、異なる部分についてのみ説明する。
本発明は上述の実施形態に限定されることなく、本発明の趣旨を逸脱しない範囲内で、以下のように種々変形可能である。また、上記各実施形態に開示された手段は、実施可能な範囲で適宜組み合わせてもよい。
11 電解液
12 PVセル(光発電素子)
13 還元電極
14 酸化電極
Claims (5)
- 電解液に浸漬され、水の酸化反応で酸素および水素イオンを生成する酸化電極(13)と、
前記電解液に浸漬され、二酸化炭素の還元反応で炭素化合物を生成する還元電極(14)と、
光が照射されることによって内部光電効果を発生し、前記酸化電極および前記還元電極に電気的に接続された光発電素子(12)と、
を備え、
前記還元電極には、窒素がドープされたグラフェンが用いられており、
前記光発電素子のカソード側に前記還元電極が一体化されており、
前記光発電素子に前記還元電極側から光が照射される二酸化炭素還元装置 - 前記光発電素子のアノード側に前記酸化電極が一体化されている請求項1に記載の二酸化炭素還元装置。
- 前記還元電極は金属電極を含んでおり、前記窒素ドープしたグラフェンが前記金属電極表面の少なくとも一部に接合されている請求項1または2に記載の二酸化炭素還元装置。
- 前記金属電極は、Ni、Au、Cu、Sn、In、Pt及びこれらの酸化物のいずれかである請求項3に記載の二酸化炭素還元装置。
- 前記窒素がドープされたグラフェンは、グラフェンを構成する炭素原子の数に対してドープする窒素原子の数が1/6以下である請求項1ないし4のいずれか1つに記載の二酸化炭素還元装置。
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JP2016212686A JP6631467B2 (ja) | 2016-10-31 | 2016-10-31 | 二酸化炭素還元装置 |
PCT/JP2017/032756 WO2018079103A1 (ja) | 2016-10-31 | 2017-09-12 | 二酸化炭素還元装置 |
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CN109023415B (zh) * | 2018-07-31 | 2020-06-26 | 江苏大学 | 表面金属铜修饰氯化亚铜/泡沫镍复合材料的制备方法及其应用 |
CN109306499B (zh) * | 2018-10-31 | 2019-10-25 | 浙江工业大学 | 一种多孔空心的RuP@PNC催化剂及其制备方法和应用 |
CN112323089B (zh) * | 2020-09-28 | 2021-10-08 | 浙江大学衢州研究院 | 一种全固相熔融盐合成掺杂碳纳米片催化剂的方法及其产品和应用 |
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WO2015146008A1 (ja) * | 2014-03-24 | 2015-10-01 | 株式会社 東芝 | 光電気化学反応システム |
JP6672935B2 (ja) * | 2015-03-30 | 2020-03-25 | 東洋インキScホールディングス株式会社 | 炭素触媒及び、その製造方法、触媒インキ並びに燃料電池 |
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