JP6631425B2 - 発光素子及び発光素子の製造方法 - Google Patents
発光素子及び発光素子の製造方法 Download PDFInfo
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- JP6631425B2 JP6631425B2 JP2016134566A JP2016134566A JP6631425B2 JP 6631425 B2 JP6631425 B2 JP 6631425B2 JP 2016134566 A JP2016134566 A JP 2016134566A JP 2016134566 A JP2016134566 A JP 2016134566A JP 6631425 B2 JP6631425 B2 JP 6631425B2
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- 238000000034 method Methods 0.000 title claims description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 239000000758 substrate Substances 0.000 claims description 143
- 239000004065 semiconductor Substances 0.000 claims description 78
- 238000000605 extraction Methods 0.000 claims description 50
- 239000002184 metal Substances 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 17
- 238000007788 roughening Methods 0.000 claims description 12
- 239000010410 layer Substances 0.000 description 391
- 238000005530 etching Methods 0.000 description 37
- 238000009826 distribution Methods 0.000 description 36
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 32
- 229910004298 SiO 2 Inorganic materials 0.000 description 25
- 238000001312 dry etching Methods 0.000 description 21
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 14
- 238000001039 wet etching Methods 0.000 description 12
- 238000005253 cladding Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000004381 surface treatment Methods 0.000 description 5
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 125000005842 heteroatom Chemical group 0.000 description 4
- 229910052740 iodine Inorganic materials 0.000 description 4
- 239000011630 iodine Substances 0.000 description 4
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016134566A JP6631425B2 (ja) | 2016-07-06 | 2016-07-06 | 発光素子及び発光素子の製造方法 |
| TW106120309A TWI731104B (zh) | 2016-07-06 | 2017-06-19 | 發光元件及發光元件的製造方法 |
| CN201710521506.0A CN107591463B (zh) | 2016-07-06 | 2017-06-30 | 发光组件及发光组件的制造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016134566A JP6631425B2 (ja) | 2016-07-06 | 2016-07-06 | 発光素子及び発光素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2018006657A JP2018006657A (ja) | 2018-01-11 |
| JP6631425B2 true JP6631425B2 (ja) | 2020-01-15 |
Family
ID=60949801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016134566A Active JP6631425B2 (ja) | 2016-07-06 | 2016-07-06 | 発光素子及び発光素子の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6631425B2 (zh) |
| CN (1) | CN107591463B (zh) |
| TW (1) | TWI731104B (zh) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6943217B2 (ja) * | 2018-04-12 | 2021-09-29 | 信越半導体株式会社 | 発光素子の配光特性の調整方法及び発光素子の製造方法 |
| DE112019002037B4 (de) * | 2018-04-19 | 2024-05-08 | Dowa Electronics Materials Co., Ltd. | Lichtemittierende Halbleiterelemente und Verfahren zu deren Herstellung |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5019664B2 (ja) * | 1998-07-28 | 2012-09-05 | アイメック | 高効率で光を発するデバイスおよびそのようなデバイスの製造方法 |
| US6504180B1 (en) * | 1998-07-28 | 2003-01-07 | Imec Vzw And Vrije Universiteit | Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom |
| TW466784B (en) * | 2000-09-19 | 2001-12-01 | United Epitaxy Co Ltd | Method to manufacture high luminescence LED by using glass pasting |
| CN100477425C (zh) * | 2005-05-19 | 2009-04-08 | 松下电器产业株式会社 | 氮化物半导体装置及其制造方法 |
| JP2008251561A (ja) * | 2007-03-29 | 2008-10-16 | Toyoda Gosei Co Ltd | 表示装置 |
| JP5050109B2 (ja) * | 2011-03-14 | 2012-10-17 | 株式会社東芝 | 半導体発光素子 |
| CN104160520A (zh) * | 2012-02-01 | 2014-11-19 | 松下电器产业株式会社 | 半导体发光元件、其制造方法和光源装置 |
| KR20130102341A (ko) * | 2012-03-07 | 2013-09-17 | 서울옵토디바이스주식회사 | 개선된 광 추출 효율을 갖는 발광 다이오드 및 그것을 제조하는 방법 |
| JP6288912B2 (ja) * | 2012-12-14 | 2018-03-07 | 日亜化学工業株式会社 | 発光素子 |
| JP6287317B2 (ja) * | 2013-02-28 | 2018-03-07 | 日亜化学工業株式会社 | 半導体発光素子 |
| KR20160083408A (ko) * | 2014-12-31 | 2016-07-12 | 삼성전자주식회사 | 퓨즈 패키지 및 이를 이용한 발광소자 모듈 |
-
2016
- 2016-07-06 JP JP2016134566A patent/JP6631425B2/ja active Active
-
2017
- 2017-06-19 TW TW106120309A patent/TWI731104B/zh active
- 2017-06-30 CN CN201710521506.0A patent/CN107591463B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW201803152A (zh) | 2018-01-16 |
| CN107591463B (zh) | 2021-08-17 |
| JP2018006657A (ja) | 2018-01-11 |
| TWI731104B (zh) | 2021-06-21 |
| CN107591463A (zh) | 2018-01-16 |
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