JP6625995B2 - 改善した半導体放射線検出器 - Google Patents

改善した半導体放射線検出器 Download PDF

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JP6625995B2
JP6625995B2 JP2016551053A JP2016551053A JP6625995B2 JP 6625995 B2 JP6625995 B2 JP 6625995B2 JP 2016551053 A JP2016551053 A JP 2016551053A JP 2016551053 A JP2016551053 A JP 2016551053A JP 6625995 B2 JP6625995 B2 JP 6625995B2
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gate
pixel
doping
layer
mig
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Japanese (ja)
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JP2016536809A5 (enExample
JP2016536809A (ja
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オーロラ アルット
オーロラ アルット
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Measurement Of Radiation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Light Receiving Elements (AREA)
JP2016551053A 2013-11-04 2014-11-04 改善した半導体放射線検出器 Active JP6625995B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
FI20130320 2013-11-04
FI20130320 2013-11-04
FI20136170 2013-11-22
FI20136170 2013-11-22
PCT/FI2014/050826 WO2015063375A2 (en) 2013-11-04 2014-11-04 Improved semiconductor radiation detector

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019214430A Division JP6849777B2 (ja) 2013-11-04 2019-11-27 改善した半導体放射線検出器

Publications (3)

Publication Number Publication Date
JP2016536809A JP2016536809A (ja) 2016-11-24
JP2016536809A5 JP2016536809A5 (enExample) 2017-01-05
JP6625995B2 true JP6625995B2 (ja) 2019-12-25

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Family Applications (4)

Application Number Title Priority Date Filing Date
JP2016551053A Active JP6625995B2 (ja) 2013-11-04 2014-11-04 改善した半導体放射線検出器
JP2019214430A Active JP6849777B2 (ja) 2013-11-04 2019-11-27 改善した半導体放射線検出器
JP2021033437A Active JP7078769B2 (ja) 2013-11-04 2021-03-03 改善した半導体放射線検出器
JP2022080294A Active JP7441267B2 (ja) 2013-11-04 2022-05-16 改善した半導体放射線検出器

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2019214430A Active JP6849777B2 (ja) 2013-11-04 2019-11-27 改善した半導体放射線検出器
JP2021033437A Active JP7078769B2 (ja) 2013-11-04 2021-03-03 改善した半導体放射線検出器
JP2022080294A Active JP7441267B2 (ja) 2013-11-04 2022-05-16 改善した半導体放射線検出器

Country Status (5)

Country Link
US (2) USRE49704E1 (enExample)
EP (2) EP3066689B1 (enExample)
JP (4) JP6625995B2 (enExample)
CN (1) CN105849908B (enExample)
WO (1) WO2015063375A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11251217B2 (en) * 2019-04-17 2022-02-15 ActLight SA Photodetector sensor arrays
DE102019206494A1 (de) 2019-05-06 2020-11-12 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. DEPFET-Transistor und Verfahren zur Herstellung eines DEPFET- Transistors
EP3998641A4 (en) 2019-07-12 2022-09-07 Sony Semiconductor Solutions Corporation LIGHT DETECTION DEVICE
FR3105409B1 (fr) * 2019-12-19 2021-12-17 Commissariat Energie Atomique Composant de détection de rayonnement électromagnétique à haute sensibilité et procédé de fabrication d’un tel composant
CN111403428B (zh) * 2020-03-23 2025-03-28 佛山眼图科技有限公司 光电传感器、可随机读取有源像素电路、图像传感器和相机装置
US11735677B2 (en) 2020-07-20 2023-08-22 ActLight SA Photodetectors and photodetector arrays
US12474453B2 (en) 2022-01-20 2025-11-18 ActLight SA Control techniques for photodetector systems

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010054723A1 (en) * 2000-03-17 2001-12-27 Tadashi Narui Image sensor, method of fabricating the same, and exposure apparatus, measuring device, alignment device, and aberration measuring device using the image sensor
US6906793B2 (en) 2000-12-11 2005-06-14 Canesta, Inc. Methods and devices for charge management for three-dimensional sensing
JP2004274009A (ja) 2003-03-06 2004-09-30 Takeshi Aoki パンチスルー現象の発生を抑制する、二段式ゲート電極を有するｍｏｓｆｅｔ
AU2005273818B2 (en) 2004-08-20 2010-09-23 Artto Aurola Semiconductor radiation detector with a modified internal gate structure
WO2006018470A1 (en) 2004-08-20 2006-02-23 Artto Aurola Semiconductor radiation detector with a modified internal gate structure
US7781811B2 (en) 2005-08-30 2010-08-24 National University Corporation Shizuoka University Semiconductor range-finding element and solid-state imaging device
JP2007103578A (ja) * 2005-10-03 2007-04-19 Canon Inc 光電変換装置及び放射線検出装置
US8148760B2 (en) 2006-01-05 2012-04-03 Artto Aurola Visible light detecting semiconductor radiation detector
WO2007077286A1 (en) 2006-01-05 2007-07-12 Artto Aurola Semiconductor radiation detector detecting visible light
JP4212623B2 (ja) 2006-01-31 2009-01-21 三洋電機株式会社 撮像装置
JP5167799B2 (ja) 2007-12-18 2013-03-21 ソニー株式会社 固体撮像装置およびカメラ
US8035806B2 (en) 2008-05-13 2011-10-11 Samsung Electronics Co., Ltd. Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor
JP5458690B2 (ja) 2009-06-22 2014-04-02 ソニー株式会社 固体撮像装置およびカメラ
JP2012190951A (ja) 2011-03-10 2012-10-04 Sony Corp 固体撮像装置およびカメラ
JP5780025B2 (ja) 2011-07-11 2015-09-16 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、及び電子機器

Also Published As

Publication number Publication date
JP2020043360A (ja) 2020-03-19
EP3761363A1 (en) 2021-01-06
JP7441267B2 (ja) 2024-02-29
JP2021103779A (ja) 2021-07-15
WO2015063375A3 (en) 2015-06-25
JP6849777B2 (ja) 2021-03-31
EP3066689B1 (en) 2020-07-08
EP3066689A2 (en) 2016-09-14
CN105849908B (zh) 2019-05-07
US10079325B2 (en) 2018-09-18
USRE49704E1 (en) 2023-10-17
JP7078769B2 (ja) 2022-05-31
JP2022105602A (ja) 2022-07-14
WO2015063375A9 (en) 2015-09-24
WO2015063375A2 (en) 2015-05-07
CN105849908A (zh) 2016-08-10
US20160240720A1 (en) 2016-08-18
JP2016536809A (ja) 2016-11-24

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