CN105849908B - 改进的半导体辐射探测器 - Google Patents

改进的半导体辐射探测器 Download PDF

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Publication number
CN105849908B
CN105849908B CN201480068356.7A CN201480068356A CN105849908B CN 105849908 B CN105849908 B CN 105849908B CN 201480068356 A CN201480068356 A CN 201480068356A CN 105849908 B CN105849908 B CN 105849908B
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pixel
mig
grid
doping
radiation detector
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CN201480068356.7A
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Chinese (zh)
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CN105849908A (zh
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亚托·奥罗拉
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Measurement Of Radiation (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Light Receiving Elements (AREA)
CN201480068356.7A 2013-11-04 2014-11-04 改进的半导体辐射探测器 Active CN105849908B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
FI20130320 2013-11-04
FI20130320 2013-11-04
FI20136170 2013-11-22
FI20136170 2013-11-22
PCT/FI2014/050826 WO2015063375A2 (en) 2013-11-04 2014-11-04 Improved semiconductor radiation detector

Publications (2)

Publication Number Publication Date
CN105849908A CN105849908A (zh) 2016-08-10
CN105849908B true CN105849908B (zh) 2019-05-07

Family

ID=52014132

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480068356.7A Active CN105849908B (zh) 2013-11-04 2014-11-04 改进的半导体辐射探测器

Country Status (5)

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US (2) USRE49704E1 (enExample)
EP (2) EP3066689B1 (enExample)
JP (4) JP6625995B2 (enExample)
CN (1) CN105849908B (enExample)
WO (1) WO2015063375A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11251217B2 (en) * 2019-04-17 2022-02-15 ActLight SA Photodetector sensor arrays
DE102019206494A1 (de) 2019-05-06 2020-11-12 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. DEPFET-Transistor und Verfahren zur Herstellung eines DEPFET- Transistors
EP3998641A4 (en) 2019-07-12 2022-09-07 Sony Semiconductor Solutions Corporation LIGHT DETECTION DEVICE
FR3105409B1 (fr) * 2019-12-19 2021-12-17 Commissariat Energie Atomique Composant de détection de rayonnement électromagnétique à haute sensibilité et procédé de fabrication d’un tel composant
CN111403428B (zh) * 2020-03-23 2025-03-28 佛山眼图科技有限公司 光电传感器、可随机读取有源像素电路、图像传感器和相机装置
US11735677B2 (en) 2020-07-20 2023-08-22 ActLight SA Photodetectors and photodetector arrays
US12474453B2 (en) 2022-01-20 2025-11-18 ActLight SA Control techniques for photodetector systems

Citations (3)

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JP2007103578A (ja) * 2005-10-03 2007-04-19 Canon Inc 光電変換装置及び放射線検出装置
CN101015063A (zh) * 2004-08-20 2007-08-08 阿尔托·奥罗拉 具有改进的内部栅极结构的半导体辐射检测器
CN101356654A (zh) * 2006-01-05 2009-01-28 阿尔托·奥罗拉 为检测可见光而优化的半导体辐射探测器

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US20010054723A1 (en) * 2000-03-17 2001-12-27 Tadashi Narui Image sensor, method of fabricating the same, and exposure apparatus, measuring device, alignment device, and aberration measuring device using the image sensor
US6906793B2 (en) 2000-12-11 2005-06-14 Canesta, Inc. Methods and devices for charge management for three-dimensional sensing
JP2004274009A (ja) 2003-03-06 2004-09-30 Takeshi Aoki パンチスルー現象の発生を抑制する、二段式ゲート電極を有するｍｏｓｆｅｔ
AU2005273818B2 (en) 2004-08-20 2010-09-23 Artto Aurola Semiconductor radiation detector with a modified internal gate structure
US7781811B2 (en) 2005-08-30 2010-08-24 National University Corporation Shizuoka University Semiconductor range-finding element and solid-state imaging device
US8148760B2 (en) 2006-01-05 2012-04-03 Artto Aurola Visible light detecting semiconductor radiation detector
JP4212623B2 (ja) 2006-01-31 2009-01-21 三洋電機株式会社 撮像装置
JP5167799B2 (ja) 2007-12-18 2013-03-21 ソニー株式会社 固体撮像装置およびカメラ
US8035806B2 (en) 2008-05-13 2011-10-11 Samsung Electronics Co., Ltd. Distance measuring sensor including double transfer gate and three dimensional color image sensor including the distance measuring sensor
JP5458690B2 (ja) 2009-06-22 2014-04-02 ソニー株式会社 固体撮像装置およびカメラ
JP2012190951A (ja) 2011-03-10 2012-10-04 Sony Corp 固体撮像装置およびカメラ
JP5780025B2 (ja) 2011-07-11 2015-09-16 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、及び電子機器

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
CN101015063A (zh) * 2004-08-20 2007-08-08 阿尔托·奥罗拉 具有改进的内部栅极结构的半导体辐射检测器
JP2007103578A (ja) * 2005-10-03 2007-04-19 Canon Inc 光電変換装置及び放射線検出装置
CN101356654A (zh) * 2006-01-05 2009-01-28 阿尔托·奥罗拉 为检测可见光而优化的半导体辐射探测器
CN101356646A (zh) * 2006-01-05 2009-01-28 阿尔托·奥罗拉 可见光检测半导体辐射检测器

Also Published As

Publication number Publication date
JP2020043360A (ja) 2020-03-19
JP6625995B2 (ja) 2019-12-25
EP3761363A1 (en) 2021-01-06
JP7441267B2 (ja) 2024-02-29
JP2021103779A (ja) 2021-07-15
WO2015063375A3 (en) 2015-06-25
JP6849777B2 (ja) 2021-03-31
EP3066689B1 (en) 2020-07-08
EP3066689A2 (en) 2016-09-14
US10079325B2 (en) 2018-09-18
USRE49704E1 (en) 2023-10-17
JP7078769B2 (ja) 2022-05-31
JP2022105602A (ja) 2022-07-14
WO2015063375A9 (en) 2015-09-24
WO2015063375A2 (en) 2015-05-07
CN105849908A (zh) 2016-08-10
US20160240720A1 (en) 2016-08-18
JP2016536809A (ja) 2016-11-24

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