JP6625891B2 - 真空処理装置 - Google Patents

真空処理装置 Download PDF

Info

Publication number
JP6625891B2
JP6625891B2 JP2016023693A JP2016023693A JP6625891B2 JP 6625891 B2 JP6625891 B2 JP 6625891B2 JP 2016023693 A JP2016023693 A JP 2016023693A JP 2016023693 A JP2016023693 A JP 2016023693A JP 6625891 B2 JP6625891 B2 JP 6625891B2
Authority
JP
Japan
Prior art keywords
processing apparatus
lamp
vacuum processing
wafer
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016023693A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017143186A5 (enExample
JP2017143186A (ja
Inventor
小林　浩之
浩之 小林
信哉 三好
信哉 三好
和典 篠田
和典 篠田
賢治 前田
賢治 前田
豊 高妻
豊 高妻
酒井　哲
哲 酒井
伊澤　勝
勝 伊澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2016023693A priority Critical patent/JP6625891B2/ja
Priority to US15/072,392 priority patent/US10290472B2/en
Publication of JP2017143186A publication Critical patent/JP2017143186A/ja
Publication of JP2017143186A5 publication Critical patent/JP2017143186A5/ja
Priority to US16/378,783 priority patent/US10937635B2/en
Application granted granted Critical
Publication of JP6625891B2 publication Critical patent/JP6625891B2/ja
Priority to US17/160,801 priority patent/US11557463B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/32339—Discharge generated by other radiation using electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2016023693A 2016-02-10 2016-02-10 真空処理装置 Active JP6625891B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016023693A JP6625891B2 (ja) 2016-02-10 2016-02-10 真空処理装置
US15/072,392 US10290472B2 (en) 2016-02-10 2016-03-17 Vacuum processing apparatus
US16/378,783 US10937635B2 (en) 2016-02-10 2019-04-09 Vacuum processing apparatus
US17/160,801 US11557463B2 (en) 2016-02-10 2021-01-28 Vacuum processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016023693A JP6625891B2 (ja) 2016-02-10 2016-02-10 真空処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019214960A Division JP6825069B2 (ja) 2019-11-28 2019-11-28 真空処理装置

Publications (3)

Publication Number Publication Date
JP2017143186A JP2017143186A (ja) 2017-08-17
JP2017143186A5 JP2017143186A5 (enExample) 2019-03-07
JP6625891B2 true JP6625891B2 (ja) 2019-12-25

Family

ID=59498305

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016023693A Active JP6625891B2 (ja) 2016-02-10 2016-02-10 真空処理装置

Country Status (2)

Country Link
US (3) US10290472B2 (enExample)
JP (1) JP6625891B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6820717B2 (ja) 2016-10-28 2021-01-27 株式会社日立ハイテク プラズマ処理装置
US11694911B2 (en) 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
KR102563925B1 (ko) * 2018-08-31 2023-08-04 삼성전자 주식회사 반도체 제조 장치
WO2020086173A2 (en) * 2018-09-26 2020-04-30 Applied Materials, Inc. Heat conductive spacer for plasma processing chamber
US11276579B2 (en) 2018-11-14 2022-03-15 Hitachi High-Tech Corporation Substrate processing method and plasma processing apparatus
WO2020110192A1 (ja) 2018-11-27 2020-06-04 株式会社日立ハイテクノロジーズ プラズマ処理装置及びそれを用いた試料の処理方法
US11515167B2 (en) 2019-02-01 2022-11-29 Hitachi High-Tech Corporation Plasma etching method and plasma processing apparatus
WO2021108294A2 (en) 2019-11-27 2021-06-03 Applied Materials, Inc. Processing chamber with multiple plasma units
WO2021108297A1 (en) 2019-11-27 2021-06-03 Applied Materials, Inc. Dual plasma pre-clean for selective gap fill
CN113287190B (zh) 2019-12-20 2023-12-22 株式会社日立高新技术 等离子处理装置以及晶片处理方法
FI129609B (en) * 2020-01-10 2022-05-31 Picosun Oy Substrate processing apparatus
JP7244447B2 (ja) * 2020-02-20 2023-03-22 株式会社日立ハイテク プラズマ処理装置
US11961719B2 (en) 2020-06-25 2024-04-16 Hitachi High-Tech Corporation Vacuum processing method
CN114127896A (zh) 2020-06-30 2022-03-01 株式会社日立高新技术 蚀刻处理方法以及蚀刻处理装置
JP2022152246A (ja) * 2021-03-29 2022-10-12 株式会社日立ハイテク ウエハ処理装置
KR20230015846A (ko) * 2021-07-23 2023-01-31 에이에스엠 아이피 홀딩 비.브이. 램프 히터가 있는 기판 이송 시스템, 챔버 퍼지 방법
JP7092959B1 (ja) * 2022-03-23 2022-06-28 Ｓｐｐテクノロジーズ株式会社 基板処理装置
JP7245378B1 (ja) 2022-03-23 2023-03-23 Ｓｐｐテクノロジーズ株式会社 基板処理装置
CN119948614A (zh) 2023-09-06 2025-05-06 株式会社日立高新技术 晶片处理装置
WO2025243104A1 (en) * 2024-05-24 2025-11-27 Applied Materials, Inc. Heating system, vacuum chamber, and method of processing a substrate in a vacuum chamber

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62130275A (ja) 1985-12-02 1987-06-12 Anelva Corp 放射線導入窓
JPH04293781A (ja) 1991-03-20 1992-10-19 Hitachi Ltd マイクロ波プラズマ処理装置
KR100605884B1 (ko) 1998-11-11 2006-08-01 동경 엘렉트론 주식회사 표면 처리 방법 및 장치
JP2002083803A (ja) * 2000-09-07 2002-03-22 Yac Co Ltd エッチング装置やアッシング装置といったようなドライプロセッシング装置
JP4232330B2 (ja) * 2000-09-22 2009-03-04 東京エレクトロン株式会社 励起ガス形成装置、処理装置及び処理方法
US20070267143A1 (en) * 2006-05-16 2007-11-22 Applied Materials, Inc. In situ cleaning of CVD system exhaust
JP4995579B2 (ja) * 2007-01-05 2012-08-08 株式会社日立国際電気 基板処理装置及び半導体デバイスの製造方法
US7967996B2 (en) * 2007-01-30 2011-06-28 Applied Materials, Inc. Process for wafer backside polymer removal and wafer front side photoresist removal
US9793126B2 (en) 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
US9548223B2 (en) * 2011-12-23 2017-01-17 Lam Research Ag Apparatus for treating surfaces of wafer-shaped articles
US20150129131A1 (en) * 2013-11-14 2015-05-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor processing apparatus and pre-clean system
JP2015185594A (ja) * 2014-03-20 2015-10-22 株式会社日立ハイテクノロジーズ エッチング装置

Also Published As

Publication number Publication date
US11557463B2 (en) 2023-01-17
US20170229290A1 (en) 2017-08-10
US10290472B2 (en) 2019-05-14
US20210151298A1 (en) 2021-05-20
US10937635B2 (en) 2021-03-02
JP2017143186A (ja) 2017-08-17
US20190237302A1 (en) 2019-08-01

Similar Documents

Publication Publication Date Title
JP6625891B2 (ja) 真空処理装置
KR101948592B1 (ko) 플라스마 처리 장치의 운전 방법
CN110660663B (zh) 蚀刻处理方法以及蚀刻处理装置
US8636871B2 (en) Plasma processing apparatus, plasma processing method and storage medium
JP5320171B2 (ja) 基板処理装置
US10192720B2 (en) Plasma processing apparatus
US20190309419A1 (en) High temperature gas distribution assembly
WO2012066779A1 (en) Apparatus for plasma treatment and method for plasma treatment
JP6488164B2 (ja) プラズマ処理装置
JP7358301B2 (ja) ウエハガス放出のためのプラズマエンハンストアニールチャンバ
KR101708935B1 (ko) 표면 처리 방법
TW201419948A (zh) 電漿處理裝置
JP3950806B2 (ja) プラズマ処理装置及びプラズマ処理方法
JP7175160B2 (ja) 基板処理装置
JP7452992B2 (ja) プラズマ処理装置およびプラズマ処理装置の運転方法
JP2021042409A (ja) プラズマ処理装置及び温度制御方法
JP2017147204A (ja) プラズマ処理装置
JP6825069B2 (ja) 真空処理装置
JP2011091389A (ja) 基板処理装置及び半導体装置の製造方法
KR102772575B1 (ko) 기판 처리 장치 및 기판 처리 방법
KR102891259B1 (ko) 웨이퍼 처리 장치
KR102731814B1 (ko) 진공 처리 방법
JP2003124193A (ja) マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理方法
TW202449841A (zh) 電漿處理裝置
JP2021182611A (ja) 基板処理装置及び基板処理装置の処理方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190123

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190123

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20191011

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20191029

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20191128

R150 Certificate of patent or registration of utility model

Ref document number: 6625891

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350