JP6616756B2 - 炭化珪素粉末の精製方法 - Google Patents
炭化珪素粉末の精製方法 Download PDFInfo
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- JP6616756B2 JP6616756B2 JP2016194698A JP2016194698A JP6616756B2 JP 6616756 B2 JP6616756 B2 JP 6616756B2 JP 2016194698 A JP2016194698 A JP 2016194698A JP 2016194698 A JP2016194698 A JP 2016194698A JP 6616756 B2 JP6616756 B2 JP 6616756B2
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- silicon carbide
- carbide powder
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- chloride
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 56
- 238000000034 method Methods 0.000 title claims description 14
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 22
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 14
- 239000011780 sodium chloride Substances 0.000 claims description 12
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 11
- 239000001103 potassium chloride Substances 0.000 claims description 5
- 235000011164 potassium chloride Nutrition 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 239000010936 titanium Substances 0.000 description 41
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 24
- 229910052719 titanium Inorganic materials 0.000 description 24
- 239000007789 gas Substances 0.000 description 22
- 238000000746 purification Methods 0.000 description 17
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 16
- 229910052782 aluminium Inorganic materials 0.000 description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 13
- 229910010271 silicon carbide Inorganic materials 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 5
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- -1 calcium chloride anhydride Chemical class 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000012153 distilled water Substances 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 239000011863 silicon-based powder Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910001626 barium chloride Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000001110 calcium chloride Substances 0.000 description 2
- 229910001628 calcium chloride Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229940050906 magnesium chloride hexahydrate Drugs 0.000 description 2
- DHRRIBDTHFBPNG-UHFFFAOYSA-L magnesium dichloride hexahydrate Chemical compound O.O.O.O.O.O.[Mg+2].[Cl-].[Cl-] DHRRIBDTHFBPNG-UHFFFAOYSA-L 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007873 sieving Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- LCKIEQZJEYYRIY-UHFFFAOYSA-N Titanium ion Chemical compound [Ti+4] LCKIEQZJEYYRIY-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000009614 chemical analysis method Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229940091250 magnesium supplement Drugs 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- XJKVPKYVPCWHFO-UHFFFAOYSA-N silicon;hydrate Chemical compound O.[Si] XJKVPKYVPCWHFO-UHFFFAOYSA-N 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- Carbon And Carbon Compounds (AREA)
Description
TiC+O2→TiO2 ・・・(1)
TiO2+MCl→TiCl4・・・(2)
炭化珪素粉末は、アチソン法によって製造した。
実施例2では、塩化ナトリウムの代わりに、塩化カリウム(KCl)を用いた以外は、実施例1と同じようにして、炭化珪素粉末を精製した。塩化カリウムは、関東化学株式会社製の特級(分子量74.55)を用いた。精製後のチタン(Ti)の含有量は0.4ppmであり、大きく減少していた。また、アルミニウム(Al)の含有量は0.3ppm、鉄(Fe)の含有量は1.1ppmであり、これらも大きく減少していた。
実施例3では、塩化ナトリウムの代わりに、塩化マグネシウム6水和物(MgCl2・6H2O)を用いた以外は、実施例1と同じようにして、炭化珪素粉末を精製した。塩化マグネシウム6水和物は、関東化学株式会社製の特級(分子量203.31)を用いた。精製後のチタン(Ti)の含有量は0.5ppmであり、大きく減少していた。また、アルミニウム(Al)の含有量は0.2ppm、鉄(Fe)の含有量は1.3ppmであり、これらも大きく減少していた。
実施例4では、塩化ナトリウムの代わりに、塩化カルシウム無水物(CaCl2)を用いた以外は、実施例1と同じようにして、炭化珪素粉末を精製した。塩化カルシウム無水物は、関東化学株式会社製の特級(分子量110.98)を用いた。精製後のチタン(Ti)の含有量は0.3ppmであり、大きく減少していた。また、アルミニウム(Al)の含有量は0.3ppm、鉄(Fe)の含有量は0.8ppmであり、これらも大きく減少していた。
実施例5では、塩化ナトリウムの代わりに、塩化バリウム無水物(BaCl2)を用いた以外は、実施例1と同じようにして、炭化珪素粉末を精製した。塩化バリウム無水物は、関東化学株式会社製の特級(分子量208.23)を用いた。精製後のチタン(Ti)の含有量は0.4ppmであり、大きく減少していた。また、アルミニウム(Al)の含有量は0.2ppm、鉄(Fe)の含有量は0.9ppmであり、これらも大きく減少していた。
実施例6では、実施例1と同じ混合物を入れた耐火アルミナ容器を管状の電気炉内に配置し、炉内を毎分20℃の速度で昇温させた。炉内の温度が500℃を越えた後は、ガス導入ロから窒素ガスを供給し、ガス排出口から吸引ポンプ(ULVAC社製 DA−60S)を用いて炉内の雰囲気ガスを吸引した。そして、炉内温度が1500℃に達した後、窒素ガスの供給及び吸引を行いながら、炉内温度1500℃に維持した。その後、炉内を毎分20℃の速度で冷却した。
炭化珪素粉末は、実施例1で製造したものを使用した。
炭化珪素粉末は、アチソン法によって製造した。
Claims (2)
- 炭化珪素粉末に塩化物を混合して加熱装置内に配置し、該加熱装置内のガスを排出しながら、900℃以上1600℃以下で焼成することを特徴する炭化珪素粉末の精製方法。
- 前記塩化物は、第2族元素の塩化物、塩化ナトリウム又は塩化カリウムであることを特徴とする請求項1に記載の炭化珪素粉末の精製方法。
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JPS6461308A (en) * | 1987-09-01 | 1989-03-08 | Tokai Konetsu Kogyo Kk | Production of high-purity silicon carbide powder |
JPH10287472A (ja) * | 1997-04-14 | 1998-10-27 | Tokai Carbon Co Ltd | 高純度炭化珪素発熱体およびその製造方法 |
JP2001130909A (ja) * | 1999-10-29 | 2001-05-15 | Bridgestone Corp | 炭化ケイ素粉体の製造方法 |
JP6037823B2 (ja) * | 2012-12-27 | 2016-12-07 | 太平洋セメント株式会社 | 高純度の炭化ケイ素の製造方法 |
JP6304477B2 (ja) * | 2013-09-04 | 2018-04-04 | 太平洋セメント株式会社 | 炭化珪素粉粒体及びその製造方法 |
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