JP6602030B2 - 前駆体のバルク気化のためのシステムおよび方法 - Google Patents

前駆体のバルク気化のためのシステムおよび方法 Download PDF

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Publication number
JP6602030B2
JP6602030B2 JP2015057019A JP2015057019A JP6602030B2 JP 6602030 B2 JP6602030 B2 JP 6602030B2 JP 2015057019 A JP2015057019 A JP 2015057019A JP 2015057019 A JP2015057019 A JP 2015057019A JP 6602030 B2 JP6602030 B2 JP 6602030B2
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Japan
Prior art keywords
heating
baffle
baffles
temperature
vaporization system
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Japanese (ja)
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JP2016027611A (ja
JP2016027611A5 (https=
Inventor
ゲイリー・リンド
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Lam Research Corp
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Lam Research Corp
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24H—FLUID HEATERS, e.g. WATER OR AIR HEATERS, HAVING HEAT-GENERATING MEANS, e.g. HEAT PUMPS, IN GENERAL
    • F24H9/00—Details
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
JP2015057019A 2014-03-27 2015-03-20 前駆体のバルク気化のためのシステムおよび方法 Active JP6602030B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/227,503 US9964332B2 (en) 2014-03-27 2014-03-27 Systems and methods for bulk vaporization of precursor
US14/227,503 2014-03-27

Publications (3)

Publication Number Publication Date
JP2016027611A JP2016027611A (ja) 2016-02-18
JP2016027611A5 JP2016027611A5 (https=) 2018-04-26
JP6602030B2 true JP6602030B2 (ja) 2019-11-06

Family

ID=54162128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015057019A Active JP6602030B2 (ja) 2014-03-27 2015-03-20 前駆体のバルク気化のためのシステムおよび方法

Country Status (5)

Country Link
US (1) US9964332B2 (https=)
JP (1) JP6602030B2 (https=)
KR (2) KR102395768B1 (https=)
CN (2) CN109898071B (https=)
TW (1) TWI667365B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102629005B1 (ko) * 2016-03-29 2024-01-25 주식회사 선익시스템 다수 종류의 증착물질의 혼합비율을 보완하여 줄 수 있는 복합증발장치
US10480070B2 (en) * 2016-05-12 2019-11-19 Versum Materials Us, Llc Delivery container with flow distributor
CN109029635A (zh) * 2017-06-12 2018-12-18 北京北方华创微电子装备有限公司 一种固态源的检测装置及其检测方法
US10822699B2 (en) * 2017-12-29 2020-11-03 Varian Semiconductor Equipment Associates, Inc. Techniques for controlling precursors in chemical deposition processes
US11624113B2 (en) * 2019-09-13 2023-04-11 Asm Ip Holding B.V. Heating zone separation for reactant evaporation system
KR102272808B1 (ko) * 2019-11-22 2021-07-02 세종대학교산학협력단 평탄화 장치 및 이를 포함하는 기판 처리 장치, 기판 처리 방법

Family Cites Families (20)

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US2405494A (en) * 1944-03-29 1946-08-06 Cedar Corp N O Air treating apparatus
US3404210A (en) * 1967-06-23 1968-10-01 American Air Filter Co Melting furnace
JPS5239652A (en) * 1975-09-22 1977-03-28 Microbial Chem Res Found Process for isolating kanamycin b derivatives with high purity
SE460450B (sv) * 1988-03-30 1989-10-09 Electrolux Ab Temperaturreglerad kokplatta
US5133284A (en) * 1990-07-16 1992-07-28 National Semiconductor Corp. Gas-based backside protection during substrate processing
JP3391829B2 (ja) * 1991-12-26 2003-03-31 キヤノン株式会社 液体状の原料を用いる化学気相堆積法及び装置
US5451258A (en) * 1994-05-11 1995-09-19 Materials Research Corporation Apparatus and method for improved delivery of vaporized reactant gases to a reaction chamber
KR100311672B1 (ko) * 1994-05-11 2001-12-15 히가시 데츠로 반응가스송출장치및방법
US5480678A (en) * 1994-11-16 1996-01-02 The B. F. Goodrich Company Apparatus for use with CVI/CVD processes
ATE374263T1 (de) * 1999-03-29 2007-10-15 Antec Solar Energy Ag Vorrichtung und verfahren zur beschichtung von substraten durch aufdampfen mittels eines pvd- verfahrens
KR100302609B1 (ko) * 1999-05-10 2001-09-13 김영환 온도가변 가스 분사 장치
US6718126B2 (en) * 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
TW200300701A (en) * 2001-11-30 2003-06-16 Asml Us Inc High flow rate bubbler system and method
US6946033B2 (en) * 2002-09-16 2005-09-20 Applied Materials Inc. Heated gas distribution plate for a processing chamber
US8708320B2 (en) * 2006-12-15 2014-04-29 Air Products And Chemicals, Inc. Splashguard and inlet diffuser for high vacuum, high flow bubbler vessel
US8518484B2 (en) 2007-01-29 2013-08-27 Praxair Technology, Inc. Bubbler apparatus and delivery method
JP4306764B2 (ja) * 2007-06-04 2009-08-05 トヨタ自動車株式会社 車間距離制御装置
DE102010033153B4 (de) * 2010-08-03 2020-06-18 Otto Männer Innovation GmbH Spritzgießdüse
KR20120131947A (ko) * 2011-05-27 2012-12-05 엘지디스플레이 주식회사 증발원 및 이를 이용한 증착장치
JP2013044043A (ja) * 2011-08-26 2013-03-04 Hitachi Kokusai Electric Inc 基板処理装置

Also Published As

Publication number Publication date
JP2016027611A (ja) 2016-02-18
CN109898071A (zh) 2019-06-18
KR20150112874A (ko) 2015-10-07
CN109898071B (zh) 2021-12-31
KR102563448B1 (ko) 2023-08-03
TW201546318A (zh) 2015-12-16
CN104947078B (zh) 2019-03-22
US20150276264A1 (en) 2015-10-01
US9964332B2 (en) 2018-05-08
KR102395768B1 (ko) 2022-05-06
TWI667365B (zh) 2019-08-01
KR20220064941A (ko) 2022-05-19
CN104947078A (zh) 2015-09-30

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