CN109898071B - 用于批量汽化前体的系统和方法 - Google Patents

用于批量汽化前体的系统和方法 Download PDF

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Publication number
CN109898071B
CN109898071B CN201910129364.2A CN201910129364A CN109898071B CN 109898071 B CN109898071 B CN 109898071B CN 201910129364 A CN201910129364 A CN 201910129364A CN 109898071 B CN109898071 B CN 109898071B
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China
Prior art keywords
heated
baffle
baffles
temperature
heated baffles
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CN201910129364.2A
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Chinese (zh)
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CN109898071A (zh
Inventor
加里·林德
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Lam Research Corp
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Lam Research Corp
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24H—FLUID HEATERS, e.g. WATER OR AIR HEATERS, HAVING HEAT-GENERATING MEANS, e.g. HEAT PUMPS, IN GENERAL
    • F24H9/00—Details
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
CN201910129364.2A 2014-03-27 2015-03-26 用于批量汽化前体的系统和方法 Active CN109898071B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/227,503 US9964332B2 (en) 2014-03-27 2014-03-27 Systems and methods for bulk vaporization of precursor
US14/227,503 2014-03-27
CN201510136272.9A CN104947078B (zh) 2014-03-27 2015-03-26 用于批量汽化前体的系统和方法

Related Parent Applications (1)

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CN201510136272.9A Division CN104947078B (zh) 2014-03-27 2015-03-26 用于批量汽化前体的系统和方法

Publications (2)

Publication Number Publication Date
CN109898071A CN109898071A (zh) 2019-06-18
CN109898071B true CN109898071B (zh) 2021-12-31

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CN201910129364.2A Active CN109898071B (zh) 2014-03-27 2015-03-26 用于批量汽化前体的系统和方法
CN201510136272.9A Active CN104947078B (zh) 2014-03-27 2015-03-26 用于批量汽化前体的系统和方法

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Country Status (5)

Country Link
US (1) US9964332B2 (https=)
JP (1) JP6602030B2 (https=)
KR (2) KR102395768B1 (https=)
CN (2) CN109898071B (https=)
TW (1) TWI667365B (https=)

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KR102629005B1 (ko) * 2016-03-29 2024-01-25 주식회사 선익시스템 다수 종류의 증착물질의 혼합비율을 보완하여 줄 수 있는 복합증발장치
US10480070B2 (en) * 2016-05-12 2019-11-19 Versum Materials Us, Llc Delivery container with flow distributor
CN109029635A (zh) * 2017-06-12 2018-12-18 北京北方华创微电子装备有限公司 一种固态源的检测装置及其检测方法
US10822699B2 (en) * 2017-12-29 2020-11-03 Varian Semiconductor Equipment Associates, Inc. Techniques for controlling precursors in chemical deposition processes
US11624113B2 (en) * 2019-09-13 2023-04-11 Asm Ip Holding B.V. Heating zone separation for reactant evaporation system
KR102272808B1 (ko) * 2019-11-22 2021-07-02 세종대학교산학협력단 평탄화 장치 및 이를 포함하는 기판 처리 장치, 기판 처리 방법

Citations (4)

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US6444043B1 (en) * 1999-03-29 2002-09-03 Antec Solar Gmbh Apparatus for depositing CdS and CdTe layers on substrates by means of a CSS process
US6453992B1 (en) * 1999-05-10 2002-09-24 Hyundai Electronics Industries Co., Ltd. Temperature controllable gas distributor
CN101205604A (zh) * 2006-12-15 2008-06-25 气体产品与化学公司 用于高真空、高流量起泡器器皿的防溅物和进口扩散器
CN102343645A (zh) * 2010-08-03 2012-02-08 奥托门纳创新有限公司 注射成型喷嘴

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US2405494A (en) * 1944-03-29 1946-08-06 Cedar Corp N O Air treating apparatus
US3404210A (en) * 1967-06-23 1968-10-01 American Air Filter Co Melting furnace
JPS5239652A (en) * 1975-09-22 1977-03-28 Microbial Chem Res Found Process for isolating kanamycin b derivatives with high purity
SE460450B (sv) * 1988-03-30 1989-10-09 Electrolux Ab Temperaturreglerad kokplatta
US5133284A (en) * 1990-07-16 1992-07-28 National Semiconductor Corp. Gas-based backside protection during substrate processing
JP3391829B2 (ja) * 1991-12-26 2003-03-31 キヤノン株式会社 液体状の原料を用いる化学気相堆積法及び装置
US5451258A (en) * 1994-05-11 1995-09-19 Materials Research Corporation Apparatus and method for improved delivery of vaporized reactant gases to a reaction chamber
KR100311672B1 (ko) * 1994-05-11 2001-12-15 히가시 데츠로 반응가스송출장치및방법
US5480678A (en) * 1994-11-16 1996-01-02 The B. F. Goodrich Company Apparatus for use with CVI/CVD processes
US6718126B2 (en) * 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
TW200300701A (en) * 2001-11-30 2003-06-16 Asml Us Inc High flow rate bubbler system and method
US6946033B2 (en) * 2002-09-16 2005-09-20 Applied Materials Inc. Heated gas distribution plate for a processing chamber
US8518484B2 (en) 2007-01-29 2013-08-27 Praxair Technology, Inc. Bubbler apparatus and delivery method
JP4306764B2 (ja) * 2007-06-04 2009-08-05 トヨタ自動車株式会社 車間距離制御装置
KR20120131947A (ko) * 2011-05-27 2012-12-05 엘지디스플레이 주식회사 증발원 및 이를 이용한 증착장치
JP2013044043A (ja) * 2011-08-26 2013-03-04 Hitachi Kokusai Electric Inc 基板処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6444043B1 (en) * 1999-03-29 2002-09-03 Antec Solar Gmbh Apparatus for depositing CdS and CdTe layers on substrates by means of a CSS process
US6453992B1 (en) * 1999-05-10 2002-09-24 Hyundai Electronics Industries Co., Ltd. Temperature controllable gas distributor
CN101205604A (zh) * 2006-12-15 2008-06-25 气体产品与化学公司 用于高真空、高流量起泡器器皿的防溅物和进口扩散器
CN102343645A (zh) * 2010-08-03 2012-02-08 奥托门纳创新有限公司 注射成型喷嘴

Also Published As

Publication number Publication date
JP2016027611A (ja) 2016-02-18
CN109898071A (zh) 2019-06-18
KR20150112874A (ko) 2015-10-07
KR102563448B1 (ko) 2023-08-03
TW201546318A (zh) 2015-12-16
CN104947078B (zh) 2019-03-22
US20150276264A1 (en) 2015-10-01
JP6602030B2 (ja) 2019-11-06
US9964332B2 (en) 2018-05-08
KR102395768B1 (ko) 2022-05-06
TWI667365B (zh) 2019-08-01
KR20220064941A (ko) 2022-05-19
CN104947078A (zh) 2015-09-30

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