JP6598811B2 - Semiconductor package placement apparatus, manufacturing apparatus, semiconductor package placement method, and electronic component manufacturing method - Google Patents

Semiconductor package placement apparatus, manufacturing apparatus, semiconductor package placement method, and electronic component manufacturing method Download PDF

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JP6598811B2
JP6598811B2 JP2017057479A JP2017057479A JP6598811B2 JP 6598811 B2 JP6598811 B2 JP 6598811B2 JP 2017057479 A JP2017057479 A JP 2017057479A JP 2017057479 A JP2017057479 A JP 2017057479A JP 6598811 B2 JP6598811 B2 JP 6598811B2
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semiconductor package
support base
resin sheet
imaging
opening
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昌一 片岡
元樹 深井
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Towa Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Description

本発明は、半導体パッケージ配置装置、製造装置、半導体パッケージの配置方法および電子部品の製造方法に関する。   The present invention relates to a semiconductor package placement apparatus, a manufacturing apparatus, a semiconductor package placement method, and an electronic component manufacturing method.

たとえば特許文献１には、ＢＧＡ（ボールグリッドアレイ）半導体パッケージにスパッタリングによりＥＭＩ（電磁干渉）シールディングを形成する方法が開示されている。特許文献１に記載の方法は以下のように行われる。   For example, Patent Document 1 discloses a method of forming EMI (electromagnetic interference) shielding on a BGA (ball grid array) semiconductor package by sputtering. The method described in Patent Document 1 is performed as follows.

まず、貫通ホールが多数形成された型板上に両面接着手段を設置する。次に、型板の貫通ホールに対応する箇所の両面接着手段を除去して、両面接着手段に多数の開口を形成する。次に、両面接着手段の開口内にボール電極が収まるように両面接着手段上にＢＧＡ半導体パッケージを配置する。その後、ＢＧＡ半導体パッケージのボール電極側と反対側の表面上にスパッタリングにより金属膜である電磁シールド膜を形成する。   First, a double-sided adhesive means is installed on a template on which many through holes are formed. Next, the double-sided adhesive means corresponding to the through holes of the template is removed, and a large number of openings are formed in the double-sided adhesive means. Next, a BGA semiconductor package is arranged on the double-sided adhesive means so that the ball electrode is contained in the opening of the double-sided adhesive means. Thereafter, an electromagnetic shielding film, which is a metal film, is formed on the surface of the BGA semiconductor package opposite to the ball electrode side by sputtering.

韓国特許第１０−１５９０５９３号公報Korean Patent No. 10-1590593

しかしながら、特許文献１に記載の方法において、両面接着手段としてポリイミド等の着色した樹脂シートを用いた場合には、両面接着手段の開口にボール電極が収まらず、両面接着手段上または型板上にボール電極が乗り上げることがあった。この場合には、スパッタリング時に金属粒子がＢＧＡ半導体パッケージのボール電極側に回り込んで製品不良が生じることがある。そのため、両面接着手段上にはＢＧＡ半導体パッケージを高精度に配置することが求められるが、特許文献１には、ＢＧＡ半導体パッケージを高精度に配置する技術について何ら開示されていない。   However, in the method described in Patent Document 1, when a colored resin sheet such as polyimide is used as the double-sided adhesive means, the ball electrode does not fit in the opening of the double-sided adhesive means, and thus on the double-sided adhesive means or the template. The ball electrode sometimes climbed up. In this case, the metal particles may wrap around to the ball electrode side of the BGA semiconductor package at the time of sputtering, resulting in product defects. For this reason, it is required to arrange the BGA semiconductor package with high accuracy on the double-sided bonding means, but Patent Document 1 does not disclose any technique for arranging the BGA semiconductor package with high accuracy.

ここで開示された実施形態によれば、半導体パッケージを吸着するための吸着機構と、半導体パッケージを配置するための樹脂シートと、樹脂シートを支持するための支持基台と、支持基台の開口を撮像するための第１の撮像部と、を備え、第１の撮像部は、赤外光源と、赤外線撮像素子と、赤外光源から樹脂シートを通して支持基台に入射する入射光と入射光が支持基台で反射する反射光とを同軸とするための光学部材と、を備え、吸着機構に吸着された半導体パッケージの撮像データと、赤外線撮像素子により撮像される開口の撮像データとに基づいて、開口に対する半導体パッケージの位置合わせを行って、半導体パッケージを樹脂シート上に配置する、半導体パッケージ配置装置を提供することができる。   According to the embodiment disclosed herein, an adsorption mechanism for adsorbing a semiconductor package, a resin sheet for arranging the semiconductor package, a support base for supporting the resin sheet, and an opening of the support base A first imaging unit for imaging the first imaging unit, the first imaging unit including an infrared light source, an infrared imaging element, and incident light and incident light incident on the support base through the resin sheet from the infrared light source. An optical member for coaxially reflecting the reflected light reflected by the support base, and based on the imaging data of the semiconductor package adsorbed by the adsorption mechanism and the imaging data of the aperture imaged by the infrared imaging element Thus, it is possible to provide a semiconductor package placement device that positions the semiconductor package with respect to the opening and places the semiconductor package on a resin sheet.

ここで開示された実施形態によれば、半導体パッケージを作製するために半導体パッケージ基板を切断するための半導体パッケージ基板切断装置と、上記の半導体パッケージ配置装置とを備えた製造装置を提供することができる。   According to the embodiments disclosed herein, it is possible to provide a manufacturing apparatus including a semiconductor package substrate cutting device for cutting a semiconductor package substrate to manufacture a semiconductor package, and the semiconductor package placement device described above. it can.

ここで開示された実施形態によれば、半導体パッケージを吸着機構により吸着する工程と、吸着機構に吸着された半導体パッケージの撮像データを取得する工程と、吸着機構に吸着された半導体パッケージを配置するための樹脂シートを支持する支持基台の開口の撮像データを取得する工程と、半導体パッケージの撮像データと、開口の撮像データとに基づいて、開口に対する半導体パッケージの位置合わせを行う工程と、半導体パッケージを樹脂シート上に配置する工程と、を含み、開口の撮像データを取得する工程は、赤外光源から樹脂シートを通して支持基台に入射光を入射させ、入射光が支持基台で反射した反射光を赤外線撮像素子を含む第１の撮像部で撮像する工程を含み、入射光と反射光とは同軸とされる半導体パッケージの配置方法を提供することができる。   According to the embodiment disclosed herein, the step of sucking the semiconductor package by the suction mechanism, the step of obtaining imaging data of the semiconductor package sucked by the suction mechanism, and the semiconductor package sucked by the suction mechanism are arranged. Obtaining the imaging data of the opening of the support base for supporting the resin sheet, the step of aligning the semiconductor package with respect to the opening based on the imaging data of the semiconductor package and the imaging data of the opening, and the semiconductor The step of acquiring the imaging data of the opening is incident on the support base through the resin sheet from the infrared light source, and the incident light is reflected by the support base. Including a step of imaging the reflected light with a first imaging unit including an infrared imaging device, wherein the incident light and the reflected light are arranged coaxially. The method can be provided.

ここで開示された実施形態によれば、半導体パッケージを作製するために半導体パッケージ基板を切断するための半導体パッケージ基板を切断する工程と、上記の半導体パッケージの配置方法により半導体パッケージを樹脂シート上に配置する工程と、樹脂シート上に配置された半導体パッケージに導電性膜を形成する工程とを含む電子部品の製造方法を提供することができる。   According to the embodiment disclosed herein, the semiconductor package is cut on the resin sheet by the step of cutting the semiconductor package substrate for cutting the semiconductor package substrate to produce the semiconductor package, and the above-described semiconductor package placement method. It is possible to provide a method for manufacturing an electronic component including a step of arranging and a step of forming a conductive film on a semiconductor package arranged on a resin sheet.

半導体パッケージを高精度に配置することが可能となる。   It becomes possible to arrange the semiconductor package with high accuracy.

実施形態の製造装置の模式的な平面図である。It is a typical top view of the manufacturing apparatus of an embodiment. 半導体パッケージの一方の面の一例の模式的な拡大平面図である。It is a typical enlarged plan view of an example of one side of a semiconductor package. （ａ）は支持基台の表面の一例の模式的な平面図であり、（ｂ）は開口の形成後の樹脂シートの表面の一例の模式的な平面図である。(A) is a typical top view of an example of the surface of a support base, (b) is a schematic plan view of an example of the surface of the resin sheet after formation of an opening. 図１の破線で取り囲まれた領域の模式的な拡大平面図である。FIG. 2 is a schematic enlarged plan view of a region surrounded by a broken line in FIG. 1. 吸着機構が半導体パッケージを吸着している動作の一例を図解する模式的な側面図である。It is a typical side view illustrating an example of the operation in which the suction mechanism is sucking the semiconductor package. 吸着機構が半導体パッケージを吸着している動作の他の一例を図解する模式的な断面図である。It is typical sectional drawing illustrating another example of the operation | movement in which the adsorption | suction mechanism is adsorbing the semiconductor package. 吸着機構によって吸着された半導体パッケージの下側から第２の撮像部が半導体パッケージの撮像データを取得する動作の一例を図解する模式的な側面図である。It is a typical side view illustrating an example of the operation in which the second imaging unit acquires the imaging data of the semiconductor package from the lower side of the semiconductor package adsorbed by the adsorption mechanism. 第１の撮像部が上方から配置部材の開口の撮像データを取得する動作の一例を図解する模式的な側面図である。It is a typical side view illustrating an example of the operation in which the first imaging unit acquires imaging data of the opening of the arrangement member from above. 第１の撮像部が支持基台の開口の撮像データを取得する方法の一例を図解する模式的な側面図である。It is a typical side view illustrating an example of a method in which the first imaging unit acquires imaging data of the opening of the support base. 半導体パッケージの位置合わせを行う動作の一例を図解する模式的な断面図である。It is typical sectional drawing illustrating an example of the operation | movement which aligns a semiconductor package. 半導体パッケージの配置を行う動作の一例を図解する模式的な断面図である。It is typical sectional drawing illustrating an example of the operation | movement which arrange | positions a semiconductor package. 半導体パッケージのボール電極の設置側と反対側の表面を導電性膜で被覆する工程の一例を図解する模式的な断面図である。It is typical sectional drawing illustrating an example of the process of coat | covering the surface on the opposite side to the installation side of the ball electrode of a semiconductor package with a conductive film. 実施形態の製造装置により製造された電子部品の一例の模式的な断面図である。It is typical sectional drawing of an example of the electronic component manufactured by the manufacturing apparatus of embodiment.

以下、実施形態について説明する。なお、実施形態の説明に用いられる図面において、同一の参照符号は、同一部分または相当部分を表わすものとする。   Hereinafter, embodiments will be described. In the drawings used to describe the embodiments, the same reference numerals represent the same or corresponding parts.

図１に、実施形態の製造装置の模式的な平面図を示す。図１に示す実施形態の製造装置１は、半導体パッケージ基板供給装置Ａ（以下、「基板供給装置Ａ」という。）と、半導体パッケージ基板切断装置Ｂ（以下、「基板切断装置Ｂ」という。）と、半導体パッケージ配置装置Ｃ（以下、「配置装置Ｃ」という。）と、図示しない導電性膜形成装置（以下、「膜形成装置」という。）とを備えている。   In FIG. 1, the typical top view of the manufacturing apparatus of embodiment is shown. 1 includes a semiconductor package substrate supply device A (hereinafter referred to as “substrate supply device A”) and a semiconductor package substrate cutting device B (hereinafter referred to as “substrate cutting device B”). And a semiconductor package placement device C (hereinafter referred to as “placement device C”) and a conductive film forming device (hereinafter referred to as “film formation device”) (not shown).

基板供給装置Ａは、半導体パッケージ基板４を基板切断装置Ｂに供給するための基板供給部３を備えている。本実施形態においては、基板供給装置Ａは、基板供給装置Ａ、基板切断装置Ｂ、配置装置Ｃ、および膜形成装置のすべての動作の制御を行う制御部２も備えている。なお、制御部２は、基板供給装置Ａが備えていることに限定されるものではなく、製造装置１の他の装置内に設けられていてもよい。また、制御部２は、複数に分割して、基板供給装置Ａ、基板切断装置Ｂ、配置装置Ｃ、および膜形成装置のうちの少なくとも二つに設けられていてもよい。   The substrate supply device A includes a substrate supply unit 3 for supplying the semiconductor package substrate 4 to the substrate cutting device B. In the present embodiment, the substrate supply apparatus A also includes a control unit 2 that controls all operations of the substrate supply apparatus A, the substrate cutting apparatus B, the arrangement apparatus C, and the film forming apparatus. Note that the control unit 2 is not limited to the one provided in the substrate supply apparatus A, and may be provided in another apparatus of the manufacturing apparatus 1. The control unit 2 may be divided into a plurality of units and provided in at least two of the substrate supply apparatus A, the substrate cutting apparatus B, the arrangement apparatus C, and the film forming apparatus.

半導体パッケージ基板４は、最終的に切断されて複数の半導体パッケージ１０に個片化される切断対象物である。半導体パッケージ基板４は、たとえば、プリント基板またはリードフレームなどからなる基材と、基材が有する複数の領域にそれぞれ装着された半導体チップ状部品と、複数の領域が一括して覆われるようにして形成された封止樹脂とを備え得る。   The semiconductor package substrate 4 is a cutting object that is finally cut and separated into a plurality of semiconductor packages 10. The semiconductor package substrate 4 is, for example, a base material made of a printed circuit board or a lead frame, a semiconductor chip-like component mounted on each of a plurality of regions of the base material, and a plurality of regions covered together. And a formed sealing resin.

基板切断装置Ｂは、切断前の半導体パッケージ基板４または切断後の半導体パッケージ１０を載置するための切断テーブル７と、切断テーブル７を回転させるための回転機構６と、回転機構６および切断テーブル７を移動させるための移動機構５と、半導体パッケージ基板４を切断するための回転刃９と、回転刃９を有する切断機構８と、を備えている。   The substrate cutting apparatus B includes a cutting table 7 for mounting the semiconductor package substrate 4 before cutting or the semiconductor package 10 after cutting, a rotating mechanism 6 for rotating the cutting table 7, and the rotating mechanism 6 and the cutting table. 7 includes a moving mechanism 5 for moving 7, a rotary blade 9 for cutting the semiconductor package substrate 4, and a cutting mechanism 8 having the rotary blade 9.

基板切断装置Ｂは、たとえば以下のように動作する。まず、基板供給装置ＡからＸ軸方向に供給された半導体パッケージ基板４を、回転機構６上に設置された切断テーブル７上に設置する。次に、移動機構５が切断テーブル７を回転機構６とともにＹ軸方向に半導体パッケージ基板４の切断位置にまで移動させる。次に、回転機構６が切断テーブル７を回転させることによって切断される半導体パッケージ基板４の向きを調整するとともに、切断機構８がＸ軸方向に移動することによって半導体パッケージ基板４に対する回転刃９の切断位置を調整する。   The substrate cutting apparatus B operates as follows, for example. First, the semiconductor package substrate 4 supplied from the substrate supply apparatus A in the X-axis direction is installed on a cutting table 7 installed on the rotation mechanism 6. Next, the moving mechanism 5 moves the cutting table 7 together with the rotating mechanism 6 to the cutting position of the semiconductor package substrate 4 in the Y-axis direction. Next, the rotation mechanism 6 adjusts the direction of the semiconductor package substrate 4 to be cut by rotating the cutting table 7, and the cutting mechanism 8 moves in the X-axis direction to move the rotary blade 9 relative to the semiconductor package substrate 4. Adjust the cutting position.

次に、回転刃９により半導体パッケージ基板４の切断を行う。半導体パッケージ基板４を切断して複数の半導体パッケージ１０に分割した後には、複数に分割された半導体パッケージ１０が設置された切断テーブル７を切断前とは逆方向にＹ軸方向に移動させて元の位置に戻す。これにより、基板切断装置Ｂの動作が完了する。   Next, the semiconductor package substrate 4 is cut by the rotary blade 9. After the semiconductor package substrate 4 is cut and divided into a plurality of semiconductor packages 10, the cutting table 7 on which the plurality of divided semiconductor packages 10 are installed is moved in the Y-axis direction in the direction opposite to that before cutting. Return to the position. Thereby, the operation of the substrate cutting apparatus B is completed.

配置装置Ｃは、半導体パッケージ基板４の切断後の半導体パッケージ１０を設置して半導体パッケージ１０を検査するための検査テーブル１２と、検査テーブル１２上に設置された半導体パッケージ１０を検査するための検査機構１１と、検査後の半導体パッケージ１０を設置するための保管テーブル１５とを備えている。   The placement apparatus C includes an inspection table 12 for inspecting the semiconductor package 10 by installing the semiconductor package 10 after the semiconductor package substrate 4 is cut, and an inspection for inspecting the semiconductor package 10 installed on the inspection table 12. A mechanism 11 and a storage table 15 for installing the semiconductor package 10 after inspection are provided.

配置装置Ｃは、また、半導体パッケージ１０を吸着するための吸着機構１４と、吸着機構１４に吸着された半導体パッケージ１０を撮像するための第２の撮像部２８と、吸着機構１４に吸着された半導体パッケージ１０を配置するための後述する支持基台２０の開口３２を撮像するための第１の撮像部２７とを備えている。本実施形態において、吸着機構１４はＸ軸方向にのみ移動可能とされており、第１の撮像部２７の少なくとも一部は吸着機構１４に対して固定された状態で取り付けられている。   The placement device C is also sucked by the suction mechanism 14 for sucking the semiconductor package 10, the second imaging unit 28 for imaging the semiconductor package 10 sucked by the suction mechanism 14, and the suction mechanism 14. A first imaging unit 27 for imaging an opening 32 of the support base 20 to be described later for arranging the semiconductor package 10 is provided. In the present embodiment, the suction mechanism 14 is movable only in the X-axis direction, and at least a part of the first imaging unit 27 is attached in a fixed state with respect to the suction mechanism 14.

配置装置Ｃは、また、配置部材供給部１９と、配置部材２２と、配置部材２２を設置するための配置テーブル１６と、配置部材２２を整列するための整列機構１７と、配置テーブル１６をＹ軸方向に移動可能とする搬送機構（図示せず）と、真空ポンプ２３とを備えている。配置部材２２は、たとえば金属製のステンシル等の支持基台２０と、支持基台２０上の樹脂シート１８とを備えている貼付部材である。   The placement device C also includes a placement member supply unit 19, a placement member 22, a placement table 16 for placing the placement member 22, an alignment mechanism 17 for aligning the placement member 22, and a placement table 16. A transport mechanism (not shown) that can move in the axial direction and a vacuum pump 23 are provided. The arrangement member 22 is a sticking member including a support base 20 such as a metal stencil and a resin sheet 18 on the support base 20.

樹脂シート１８としては、たとえば、樹脂製のシート状基材と、当該シート状基材の少なくとも片面に塗布された接着剤からなる接着層（粘着層）と、を備えたシートを用いることができる。接着剤としては、たとえば粘着剤（感圧接着剤：pressure sensitive adhesive）を用いることができる。樹脂シート１８として、たとえば、ポリイミドフィルムの両面にシリコーン系粘着剤が塗布された樹脂シート等を用いることができる。ここで、樹脂シート１８は、少なくとも半導体パッケージ１０が貼り付けられる側の面に接着剤が塗布されて接着層が形成されていればよいが、半導体パッケージ１０が貼り付けられる側の面とその反対側の面に接着剤が塗布されて接着層が形成されてもよい。このように、樹脂シート１８における少なくとも半導体パッケージ１０の配置面に接着層（粘着層）が設けられるため、貼付部材である配置部材２２には、半導体パッケージ１０を貼り付けることができる。   As the resin sheet 18, for example, a sheet including a resin sheet-like base material and an adhesive layer (adhesive layer) made of an adhesive applied to at least one surface of the sheet-like base material can be used. . As the adhesive, for example, a pressure sensitive adhesive (pressure sensitive adhesive) can be used. As the resin sheet 18, for example, a resin sheet in which a silicone-based adhesive is applied on both sides of a polyimide film can be used. Here, the resin sheet 18 only needs to have an adhesive layer formed by applying an adhesive to at least the surface to which the semiconductor package 10 is attached, but the opposite side to the surface to which the semiconductor package 10 is attached. An adhesive layer may be formed by applying an adhesive to the side surface. Thus, since the adhesive layer (adhesive layer) is provided at least on the arrangement surface of the semiconductor package 10 in the resin sheet 18, the semiconductor package 10 can be adhered to the arrangement member 22 that is an adhesion member.

配置部材２２は、支持基台２０および樹脂シート１８に加えて、支持基台２０の外周に金属製等のフレーム状部材を設けた構成としてもよい。この場合には、たとえば、樹脂シート１８に対して同じ側に支持基台２０とフレーム部材とを配置する構成としてもよい。支持基台２０よりも樹脂シート１８のサイズを大きくし、支持基台２０よりも大きな開口が内側に形成されたフレーム状部材に樹脂シート１８を取り付ければよく、さらにフレーム状部材の厚さを支持基台２０の厚さよりも厚くすることができる。このような構成の配置部材２２とすることによって、フレーム状部材を搬送用部材として用いることができる。   In addition to the support base 20 and the resin sheet 18, the arrangement member 22 may have a configuration in which a metal-like frame-like member is provided on the outer periphery of the support base 20. In this case, for example, the support base 20 and the frame member may be arranged on the same side with respect to the resin sheet 18. The size of the resin sheet 18 is made larger than that of the support base 20, and the resin sheet 18 may be attached to a frame-like member having an opening larger than that of the support base 20, and the thickness of the frame-like member is further supported. It can be made thicker than the thickness of the base 20. By setting it as the arrangement | positioning member 22 of such a structure, a frame-shaped member can be used as a conveyance member.

配置装置Ｃは、たとえば以下のように動作する。まず、半導体パッケージ１０が載置された検査テーブル１２をＸ軸方向に移動させる。この検査テーブル１２の移動中に検査機構１１によって半導体パッケージ１０が良品であるか否かの検査が行われる。この検査によって、半導体パッケージ１０が良品でないと判断された場合には、この時点でまたはこの後に半導体パッケージ１０が廃棄用ボックス等に収納される。一方、半導体パッケージ１０が良品であると判断された場合には、半導体パッケージ１０を反転させて、半導体パッケージ１０が保管テーブル１５上に設置される。半導体パッケージ１０は、たとえば図２の模式的拡大平面図に示されるボール電極１３が下側（保管テーブル１５側）を向いた状態で保管テーブル１５上に設置される。その後、保管テーブル１５は、吸着機構１４による半導体パッケージ１０の吸着位置までＹ軸方向に移動する。   The placement device C operates as follows, for example. First, the inspection table 12 on which the semiconductor package 10 is placed is moved in the X-axis direction. While the inspection table 12 is moving, the inspection mechanism 11 inspects whether or not the semiconductor package 10 is a non-defective product. If it is determined by this inspection that the semiconductor package 10 is not a non-defective product, the semiconductor package 10 is stored in a disposal box or the like at or after this time. On the other hand, when it is determined that the semiconductor package 10 is a non-defective product, the semiconductor package 10 is reversed and the semiconductor package 10 is placed on the storage table 15. The semiconductor package 10 is installed on the storage table 15 with the ball electrode 13 shown in the schematic enlarged plan view of FIG. 2 facing downward (storage table 15 side), for example. Thereafter, the storage table 15 moves in the Y-axis direction to the suction position of the semiconductor package 10 by the suction mechanism 14.

また、配置部材供給部１９から、支持基台２０と、支持基台２０上の樹脂シート１８とを備えた配置部材２２を供給する。配置部材２２をＸ軸方向に移動させて、配置部材２２を配置テーブル１６上に設置する。そして、たとえば図３（ａ）の模式的平面図に示される支持基台２０の開口３２に相当する樹脂シート１８の箇所に、たとえばレーザ光を照射することによって、たとえば図３（ｂ）の模式的平面図に示すように、樹脂シート１８にも複数の開口３３を形成する。   In addition, the arrangement member supply unit 19 supplies the arrangement member 22 including the support base 20 and the resin sheet 18 on the support base 20. The arrangement member 22 is moved on the X-axis direction to place the arrangement member 22 on the arrangement table 16. Then, for example, by irradiating a portion of the resin sheet 18 corresponding to the opening 32 of the support base 20 shown in the schematic plan view of FIG. 3A with, for example, a laser beam, for example, the schematic of FIG. As shown in the plan view, a plurality of openings 33 are also formed in the resin sheet 18.

図４に、この段階での図１の破線２１で取り囲まれた領域の模式的な拡大平面図を示す。配置装置Ｃのこの段階以降の動作は、図４〜図１１を参照して説明する。まず、吸着機構１４は、保管テーブル１５上に配置された半導体パッケージ１０の吸着位置の上方までＸ軸方向に移動する。次に、たとえば図５の模式的側面図に示すように、吸着機構１４は吸着部材３０によって、半導体パッケージ１０のボール電極１３側と反対側を吸着する。   FIG. 4 is a schematic enlarged plan view of a region surrounded by a broken line 21 in FIG. 1 at this stage. Operations after this stage of the placement device C will be described with reference to FIGS. First, the suction mechanism 14 moves in the X-axis direction to above the suction position of the semiconductor package 10 disposed on the storage table 15. Next, for example, as shown in the schematic side view of FIG. 5, the suction mechanism 14 sucks the side opposite to the ball electrode 13 side of the semiconductor package 10 by the suction member 30.

なお、図５に示す例では、説明の便宜のため、吸着機構１４が半導体パッケージ１０を１つのみ吸着する場合を示しているが、この場合に限定されず、たとえば図６の模式的断面図に示すように、吸着機構１４は複数の半導体パッケージ１０を同時に吸着してもよい。なお、図６に示される隣り合う吸着部材３０の間の間隔はＬ１とされている。   In the example shown in FIG. 5, for convenience of explanation, the case where the suction mechanism 14 sucks only one semiconductor package 10 is shown. However, the present invention is not limited to this case. For example, the schematic cross-sectional view of FIG. As shown in FIG. 3, the suction mechanism 14 may suck a plurality of semiconductor packages 10 simultaneously. In addition, the space | interval between the adjacent adsorption | suction members 30 shown by FIG. 6 is set to L1.

次に、半導体パッケージ１０を吸着した吸着機構１４は、半導体パッケージ１０の吸着位置の上方から配置部材２２の上方に向かってＸ軸方向に移動する。このとき、たとえば図７の模式的側面図に示すように、吸着機構１４によって吸着された半導体パッケージ１０の下側から第２の撮像部２８が当該半導体パッケージ１０の撮像データを取得する。第２の撮像部２８によって取得される撮像データとしては、たとえば半導体パッケージ１０の位置データ等が挙げられる。第２の撮像部２８によって取得された撮像データは基板供給装置Ａの制御部２に送信される。   Next, the suction mechanism 14 that sucks the semiconductor package 10 moves in the X-axis direction from above the suction position of the semiconductor package 10 toward above the placement member 22. At this time, for example, as shown in the schematic side view of FIG. 7, the second imaging unit 28 acquires imaging data of the semiconductor package 10 from the lower side of the semiconductor package 10 adsorbed by the adsorption mechanism 14. Examples of the imaging data acquired by the second imaging unit 28 include position data of the semiconductor package 10. The imaging data acquired by the second imaging unit 28 is transmitted to the control unit 2 of the substrate supply apparatus A.

第２の撮像部２８によって半導体パッケージ１０の撮像データを取得した後には、吸着機構１４は、第２の撮像部２８の上方から配置部材２２の上方に向かってさらにＸ軸方向に移動する。その後、たとえば図８の模式的側面図に示すように、吸着機構１４に取り付けられた第１の撮像部２７が上方から支持基台２０の開口３２の撮像データを取得する。   After the imaging data of the semiconductor package 10 is acquired by the second imaging unit 28, the suction mechanism 14 further moves in the X-axis direction from above the second imaging unit 28 to above the arrangement member 22. Thereafter, for example, as shown in the schematic side view of FIG. 8, the first imaging unit 27 attached to the suction mechanism 14 acquires imaging data of the opening 32 of the support base 20 from above.

なお、ここでは、第２の撮像部２８によって半導体パッケージ１０の撮像データを取得した後に、第１の撮像部２７によって支持基台２０の開口３２の撮像データを取得する場合について説明したが、第１の撮像部２７による撮像データの取得と第２の撮像部２８による撮像データの取得との順番を入れ替えて、第１の撮像部２７によって支持基台２０の開口３２の撮像データを取得した後に、第２の撮像部２８によって半導体パッケージ１０の撮像データを取得してもよい。   Here, the case where the imaging data of the semiconductor package 10 is acquired by the second imaging unit 28 and then the imaging data of the opening 32 of the support base 20 is acquired by the first imaging unit 27 has been described. After acquiring the imaging data of the opening 32 of the support base 20 by the first imaging unit 27 by switching the order of the acquisition of the imaging data by the first imaging unit 27 and the acquisition of the imaging data by the second imaging unit 28. The imaging data of the semiconductor package 10 may be acquired by the second imaging unit 28.

図９に、第１の撮像部２７が支持基台２０の開口３２の撮像データを取得する方法の一例を図解する模式的な側面図を示す。図９に示すように、まず、赤外光源５２が光学部材としてのビームスプリッタ５３に対してたとえばＸ軸方向またはＹ軸方向に赤外光５４ａを照射する。次に、赤外光源５２により照射された赤外光５４ａはビームスプリッタ５３によってその進行方向をＺ軸方向に変えられる。なお、赤外光源５２は、後述する赤外線撮像素子５１により撮像可能な赤外領域の光を少なくとも一部として発する光源であればよく、赤外領域のみの光を発する光源だけを意味しない。   FIG. 9 is a schematic side view illustrating an example of a method in which the first imaging unit 27 acquires imaging data of the opening 32 of the support base 20. As shown in FIG. 9, first, the infrared light source 52 irradiates the beam splitter 53 as an optical member with infrared light 54a in the X-axis direction or the Y-axis direction, for example. Next, the traveling direction of the infrared light 54 a emitted from the infrared light source 52 is changed by the beam splitter 53 to the Z-axis direction. The infrared light source 52 may be a light source that emits at least part of light in the infrared region that can be imaged by the infrared imaging element 51 described later, and does not mean only a light source that emits light in the infrared region alone.

次に、ビームスプリッタ５３によって進行方向を変えられた赤外光５４ｂは、樹脂シート１８に入射する。ここで、樹脂シート１８がたとえばポリイミド樹脂から形成されている場合には樹脂シート１８は黄色に着色しているが、赤外光５４ｂは黄色に着色した樹脂シート１８をＺ軸方向に透過する。その結果、赤外光５４ｂはたとえば金属製のステンシル等の支持基台２０の平坦な表面にＺ軸方向の下向きに入射して、Ｚ軸方向の上向きに反射する反射光５５を生成する。その後、支持基台２０で反射した反射光５５は、赤外線撮像素子５１にＺ軸方向に入射し、赤外線撮像素子５１に入射した反射光５５によって、支持基台２０の位置を認識することが可能な撮像データを取得することができる。   Next, the infrared light 54 b whose traveling direction is changed by the beam splitter 53 is incident on the resin sheet 18. Here, when the resin sheet 18 is made of, for example, a polyimide resin, the resin sheet 18 is colored yellow, but the infrared light 54b passes through the resin sheet 18 colored yellow in the Z-axis direction. As a result, the infrared light 54b is incident downward on the flat surface of the support base 20, such as a metal stencil, downward in the Z-axis direction, and generates reflected light 55 that is reflected upward in the Z-axis direction. Thereafter, the reflected light 55 reflected by the support base 20 enters the infrared imaging element 51 in the Z-axis direction, and the position of the support base 20 can be recognized by the reflected light 55 incident on the infrared imaging element 51. Image data can be acquired.

なお、第１の撮像部２７は少なくとも赤外線撮像素子５１を含んでいればよく、ここに示した例では、第１の撮像部２７は、赤外線撮像素子５１を含むとともに、赤外光源５２およびビームスプリッタ５３も含んでいる。また、第１の撮像部２７において、赤外線撮像素子５１に対して、赤外光源５２およびビームスプリッタ５３の少なくとも一方が一体化されていてもよい。ビームスプリッタ５３は、後述するように入射光５４ｂと反射光５５とを同軸とするための光学部材である。光学部材としては、ビームスプリッタ５３以外にも、赤外光５４ａを反射し反射光５５を透過させることによって入射光５４ｂと反射光５５とを同軸とすることができるハーフミラー等を用いることもできる。   The first imaging unit 27 only needs to include at least the infrared imaging element 51. In the example shown here, the first imaging unit 27 includes the infrared imaging element 51, the infrared light source 52, and the beam. A splitter 53 is also included. In the first imaging unit 27, at least one of the infrared light source 52 and the beam splitter 53 may be integrated with the infrared imaging element 51. The beam splitter 53 is an optical member for making the incident light 54b and the reflected light 55 coaxial as will be described later. As the optical member, in addition to the beam splitter 53, a half mirror or the like that can make the incident light 54b and the reflected light 55 coaxial by reflecting the infrared light 54a and transmitting the reflected light 55 can be used. .

このように、本実施形態においては、赤外光源５２から樹脂シート１８を通して支持基台２０に入射する入射光５４ｂと、入射光５４ｂが支持基台２０で反射することによって生成した反射光５５とを同軸（本実施形態においてはＺ軸に平行な軸）とすることができる。これにより、本実施形態においては、支持基台２０の開口３２の位置を高精度に特定することができる。第１の撮像部２７によって取得された支持基台２０の開口３２の位置に関する撮像データも、基板供給装置Ａの制御部２に送信される。   As described above, in the present embodiment, the incident light 54b incident on the support base 20 from the infrared light source 52 through the resin sheet 18 and the reflected light 55 generated when the incident light 54b is reflected by the support base 20; Can be coaxial (in this embodiment, an axis parallel to the Z axis). Thereby, in this embodiment, the position of the opening 32 of the support base 20 can be specified with high precision. Imaging data regarding the position of the opening 32 of the support base 20 acquired by the first imaging unit 27 is also transmitted to the control unit 2 of the substrate supply apparatus A.

なお、上記において、樹脂シート１８としては、上記のポリイミド樹脂から形成された黄色に着色した樹脂シートに限定されないことは言うまでもない。また、赤外光５４ｂとしては、その少なくとも一部が、着色した樹脂シート１８を透過して支持基台２０に入射し、当該赤外光５４ｂと同軸となるように支持基台２０で反射する反射光５５を生成する光であれば特に限定されない。また、「同軸」は、完全に軸が一致している場合に限定されず、本実施形態における効果が得られるのであれば、入射光である赤外光５４ｂの軸と反射光５５の軸との間に少しズレが生じていてもよい。   In addition, in the above, it cannot be overemphasized that the resin sheet 18 is not limited to the yellow colored resin sheet formed from the said polyimide resin. Further, at least a part of the infrared light 54b passes through the colored resin sheet 18 and enters the support base 20, and is reflected by the support base 20 so as to be coaxial with the infrared light 54b. The light is not particularly limited as long as it is light that generates the reflected light 55. Further, “coaxial” is not limited to the case where the axes completely coincide with each other, and if the effect of the present embodiment can be obtained, the axis of the infrared light 54b that is incident light and the axis of the reflected light 55 There may be a slight deviation between the two.

その後、制御部２は、第１の撮像部２７により撮像された支持基台２０の開口３２の撮像データと、第２の撮像部２８により撮像された半導体パッケージ１０の撮像データとに基づいて、支持基台２０の開口３２に対する半導体パッケージ１０の位置合わせを行う。   Thereafter, the control unit 2 is based on the imaging data of the opening 32 of the support base 20 captured by the first imaging unit 27 and the imaging data of the semiconductor package 10 captured by the second imaging unit 28. The semiconductor package 10 is aligned with the opening 32 of the support base 20.

位置合わせは、たとえば、複数の開口３２の配列方向をＸ軸と平行にするために回転機構（図示せず）によって支持基台２０を回転して、支持基台２０の複数の開口３２の整列方向と吸着機構１４の軸方向（Ｘ軸方向）とが整列するように搬送機構（図示せず）によって支持基台２０をＹ軸方向に移動すること等により行うことができる。これにより、支持基台２０の開口３２に対する半導体パッケージ１０のＹ軸方向の位置合わせが完了する。   For alignment, for example, the support base 20 is rotated by a rotation mechanism (not shown) so that the arrangement direction of the plurality of openings 32 is parallel to the X axis, and the plurality of openings 32 of the support base 20 are aligned. The support base 20 can be moved in the Y-axis direction by a transport mechanism (not shown) so that the direction and the axial direction (X-axis direction) of the suction mechanism 14 are aligned. Thereby, the alignment of the semiconductor package 10 with respect to the opening 32 of the support base 20 in the Y-axis direction is completed.

半導体パッケージ１０の位置合わせは、たとえば図１０の模式的断面図に示すように、吸着機構１４による半導体パッケージ１０のＸ軸方向への移動、隣り合う吸着部材３０の間の間隔のＬ１からＬ２への変更に伴う半導体パッケージ１０のＸ軸方向への移動、またはこれらの組み合わせによる半導体パッケージ１０のＸ軸方向への移動により行うことができる。これにより、支持基台２０の開口３２内に半導体パッケージ１０のボール電極１３が収まるように、支持基台２０の開口３２に対する半導体パッケージ１０のＸ軸方向の位置合わせが完了する。   The alignment of the semiconductor package 10 is performed, for example, as shown in the schematic cross-sectional view of FIG. 10, the movement of the semiconductor package 10 in the X-axis direction by the suction mechanism 14, and the distance L1 from L1 between the adjacent suction members 30. It can be performed by moving the semiconductor package 10 in the X-axis direction according to the change of the above, or moving the semiconductor package 10 in the X-axis direction by a combination thereof. Thereby, the alignment of the semiconductor package 10 in the X-axis direction with respect to the opening 32 of the support base 20 is completed so that the ball electrode 13 of the semiconductor package 10 fits in the opening 32 of the support base 20.

たとえば上述のようにして、支持基台２０の開口３２に対する半導体パッケージ１０のＸ軸方向およびＹ軸方向の位置合わせが完了した後には、たとえば図１１の模式的断面図に示すように、半導体パッケージ１０のボール電極１３が支持基台２０の開口３２内に収まるように吸着部材３０に吸着された半導体パッケージ１０を下方に下ろし、樹脂シート１８上に半導体パッケージ１０を配置して貼り付ける。   For example, as described above, after the alignment of the semiconductor package 10 in the X-axis direction and the Y-axis direction with respect to the opening 32 of the support base 20 is completed, as shown in the schematic cross-sectional view of FIG. The semiconductor package 10 adsorbed by the adsorbing member 30 is lowered so that the ten ball electrodes 13 are accommodated in the openings 32 of the support base 20, and the semiconductor package 10 is disposed and pasted on the resin sheet 18.

たとえば半導体パッケージ１０が半導体パッケージ１０の一方の面上にボール電極１３を設置したＢＧＡ半導体パッケージである場合には、たとえば図２に示すように、半導体パッケージ１０の周縁１０ａに近接してボール電極１３が設置され、半導体パッケージ１０のボール電極１３から周縁１０ａまでの距離が非常に短くなることがある。この場合には、たとえば図１１に示すように、ボール電極１３を支持基台２０の開口３２内に収めつつ、ボール電極１３から周縁１０ａまでの短い距離の領域をすべて開口３２外に設置する必要があることから、非常に高精度の配置技術が要求される。   For example, when the semiconductor package 10 is a BGA semiconductor package in which the ball electrode 13 is disposed on one surface of the semiconductor package 10, the ball electrode 13 is adjacent to the peripheral edge 10 a of the semiconductor package 10 as shown in FIG. And the distance from the ball electrode 13 of the semiconductor package 10 to the peripheral edge 10a may be very short. In this case, for example, as shown in FIG. 11, it is necessary to place the entire area of the short distance from the ball electrode 13 to the peripheral edge 10 a outside the opening 32 while accommodating the ball electrode 13 in the opening 32 of the support base 20. Therefore, a very high precision placement technique is required.

本実施形態においては、図９に示すように、赤外光源５２から樹脂シート１８を通して支持基台２０に入射する入射光としての赤外光５４ｂと同軸の反射光５５が赤外線撮像素子５１に入射して支持基台２０の開口３２の位置を示す撮像データを取得している。そのため、支持基台２０の開口３２の位置を高精度に特定することができる。したがって、本実施形態においては、半導体パッケージ１０のボール電極１３が支持基台２０の開口３２内に高精度に収まるように、高精度に半導体パッケージ１０を樹脂シート１８上に配置することができる。   In the present embodiment, as shown in FIG. 9, reflected light 55 coaxial with infrared light 54 b as incident light incident on the support base 20 from the infrared light source 52 through the resin sheet 18 is incident on the infrared imaging element 51. Thus, imaging data indicating the position of the opening 32 of the support base 20 is acquired. Therefore, the position of the opening 32 of the support base 20 can be specified with high accuracy. Therefore, in the present embodiment, the semiconductor package 10 can be arranged on the resin sheet 18 with high precision so that the ball electrode 13 of the semiconductor package 10 can be placed in the opening 32 of the support base 20 with high precision.

ここで、支持基台２０の表面が平滑であっても、入射光５４ｂと反射光５５とを同軸とすることにより、支持基台２０の開口３２を撮像することができる。また、ポリイミドなどの赤外領域より可視光域の吸収が多い樹脂を用いた樹脂シート１８であっても、赤外光源５２と赤外線撮像素子５１とを用いることにより、樹脂シート１８を通して支持基台２０の開口３２を撮像することができる。   Here, even if the surface of the support base 20 is smooth, the opening 32 of the support base 20 can be imaged by making the incident light 54 b and the reflected light 55 coaxial. Further, even if the resin sheet 18 is made of a resin that absorbs more visible light than in the infrared region, such as polyimide, the support base through the resin sheet 18 by using the infrared light source 52 and the infrared imaging element 51. Twenty openings 32 can be imaged.

さらに、本実施形態において、吸着機構１４がＸ軸方向のみに移動可能とされ、支持基台２０の開口３２を撮像する第１の撮像部２７の少なくとも一部が吸着機構１４に対して固定された状態で取り付けられている場合には、第２の撮像部２８による半導体パッケージ１０の検出位置のＹ軸方向へのズレが生じにくくなるだけでなく、第１の撮像部２７による開口３２の検出位置のＹ軸方向へのズレも生じにくくなる。そのため、支持基台２０の開口３２内にボール電極１３が収まるように樹脂シート１８上に半導体パッケージ１０を高精度に配置することができる。   Further, in the present embodiment, the suction mechanism 14 is movable only in the X-axis direction, and at least a part of the first imaging unit 27 that images the opening 32 of the support base 20 is fixed to the suction mechanism 14. In the case where the first image pickup unit 27 is attached, not only the detection position of the semiconductor package 10 detected by the second image pickup unit 28 is hardly shifted in the Y-axis direction but also the opening 32 is detected by the first image pickup unit 27. Misalignment of the position in the Y-axis direction is less likely to occur. Therefore, the semiconductor package 10 can be arranged on the resin sheet 18 with high accuracy so that the ball electrode 13 is accommodated in the opening 32 of the support base 20.

なお、図１および図４は、吸着機構１４のＸ軸方向に隣り合う位置に第１の撮像部２７が取付けられた構成を示している。第１の撮像部２７は、吸着機構１４に対して固定された状態で取付けられていればよく、たとえば、吸着機構１４のＹ軸方向に隣り合う位置に取付けられてもよい。   1 and 4 show a configuration in which the first imaging unit 27 is attached to a position adjacent to the suction mechanism 14 in the X-axis direction. The first imaging unit 27 only needs to be attached in a fixed state with respect to the suction mechanism 14. For example, the first imaging unit 27 may be attached to a position adjacent to the suction mechanism 14 in the Y-axis direction.

また、図１および図４は、吸着機構１４を２つ用いた構成を示しているが、吸着機構１４を１つのみ用いてもよい。吸着機構１４を１つのみ用いた場合には、第１の撮像部２７および第２の撮像部２８をそれぞれ１つずつのみ用いることができる。   1 and 4 show a configuration using two suction mechanisms 14, but only one suction mechanism 14 may be used. When only one suction mechanism 14 is used, only one each of the first imaging unit 27 and the second imaging unit 28 can be used.

また、図１および図４は、２つの吸着機構１４のそれぞれに第１の撮像部２７および第２の撮像部２８を１つずつ合計で第１の撮像部２７および第２の撮像部２８を２つずつ用いた構成を示しているが、第１の撮像部２７および第２の撮像部２８を２つの吸着機構１４に共通化して、２つの吸着機構１４と１つの第１の撮像部２７と１つの第２の撮像部２８とを用いた構成とすることもできる。この場合には、１つの第２の撮像部２８を図１および図４のＹ軸方向に移動可能とすることにより、２つの吸着機構１４に対して１つの第２の撮像部２８を共通化することができる。また、１つの第１の撮像部２７を２つの吸着機構１４のうちの一方に固定された状態で取り付け、第１の撮像部２７により取得した撮像データに基づいて、たとえば支持基台２０の開口３２の座標データを生成することにより、２つの吸着機構１４に対して１つの第１の撮像部２７を共通化することができる。一例を示せば、１つの第１の撮像部２７により２つの吸着機構１４に対応する支持基台２０の開口３２の撮像データを取得し、この撮像データに基づいて２つの吸着機構１４に対応する支持基台２０の開口３２の座標データを生成すればよい。ここでの第１の撮像部２７および第２の撮像部２８による撮像データ取得の順番としては、たとえば、第２の撮像部２８による第１の吸着機構１４に吸着された半導体パッケージ１０の撮像、第１の撮像部２７による第１および第２の吸着機構１４に対応する支持基台２０の開口３２の撮像、および第２の撮像部２８による第２の吸着機構１４に吸着された半導体パッケージ１０の撮像という順番としてもよい。   1 and FIG. 4, the first imaging unit 27 and the second imaging unit 28 are added to each of the two suction mechanisms 14, in total, the first imaging unit 27 and the second imaging unit 28. Although the configuration using two each is shown, the first imaging unit 27 and the second imaging unit 28 are shared by the two suction mechanisms 14, and the two suction mechanisms 14 and the first first imaging unit 27 are used. And one second imaging unit 28 may be used. In this case, by making one second imaging unit 28 movable in the Y-axis direction of FIGS. 1 and 4, one second imaging unit 28 is made common to the two suction mechanisms 14. can do. In addition, one first imaging unit 27 is attached in a state fixed to one of the two suction mechanisms 14, and, for example, based on the imaging data acquired by the first imaging unit 27, for example, the opening of the support base 20. By generating 32 coordinate data, one first imaging unit 27 can be shared by the two suction mechanisms 14. For example, the imaging data of the openings 32 of the support base 20 corresponding to the two suction mechanisms 14 is acquired by one first imaging unit 27, and the two suction mechanisms 14 are handled based on the imaging data. What is necessary is just to produce | generate the coordinate data of the opening 32 of the support base 20. FIG. As an order of acquisition of imaging data by the first imaging unit 27 and the second imaging unit 28 here, for example, imaging of the semiconductor package 10 adsorbed by the first adsorption mechanism 14 by the second imaging unit 28, Imaging of the opening 32 of the support base 20 corresponding to the first and second suction mechanisms 14 by the first imaging unit 27 and the semiconductor package 10 sucked by the second suction mechanism 14 by the second imaging unit 28 It is good also as the order of imaging.

次に、たとえば図１２の模式的断面図に示すように、図示しない膜形成装置によって半導体パッケージ１０のボール電極１３の設置側と反対側の表面をたとえば金属膜等からなる導電性膜２５で被覆する。その後、たとえば図１３の模式的断面図に示すように、導電性膜２５の形成後の半導体パッケージ１０からなる電子部品２４を配置部材２２から取り出すことによって、電子部品２４の製造が完了する。ここで、膜形成装置としては、たとえばスパッタリング装置などを用いることができる。また、半導体パッケージ１０に導電性膜２５を形成する面としては、ボール電極１３の設置面以外の面のすべてとすることができる。たとえば、半導体パッケージ１０の形状が略直方体である場合には、ボール電極１３の設置面以外の５面に導電性膜２５を形成することができる。また、導電性膜２５はたとえば電磁シールド膜として機能させることができる。   Next, for example, as shown in the schematic cross-sectional view of FIG. 12, the surface of the semiconductor package 10 opposite to the installation side of the ball electrode 13 is covered with a conductive film 25 made of, for example, a metal film or the like by a film forming apparatus (not shown). To do. Thereafter, for example, as shown in the schematic cross-sectional view of FIG. 13, the electronic component 24 including the semiconductor package 10 after the formation of the conductive film 25 is taken out of the placement member 22, thereby completing the manufacture of the electronic component 24. Here, as the film forming apparatus, for example, a sputtering apparatus can be used. Further, the surface on which the conductive film 25 is formed on the semiconductor package 10 can be any surface other than the surface on which the ball electrode 13 is installed. For example, when the shape of the semiconductor package 10 is a substantially rectangular parallelepiped, the conductive film 25 can be formed on five surfaces other than the installation surface of the ball electrode 13. The conductive film 25 can function as an electromagnetic shield film, for example.

今回開示された実施形態はすべての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は上記した説明ではなくて特許請求の範囲によって示され、特許請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。   It should be thought that embodiment disclosed this time is an illustration and restrictive at no points. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

１ 電子部品の製造装置、２ 制御部、３ 基板供給部、４ 半導体パッケージ基板、５ 移動機構、６ 回転機構、７ 切断テーブル、８ 切断機構、９ 回転刃、１０ 半導体パッケージ、１０ａ 周縁、１１ 検査機構、１２ 検査テーブル、１３ ボール電極、１４ 吸着機構、１５ 保管テーブル、１６ 配置テーブル、１７ 整列機構、１８ 樹脂シート、１９ 配置部材供給部、２０ 支持基台、２１ 破線、２２ 配置部材、２３ 真空ポンプ、２４ 電子部品、２５ 導電性膜、２７ 第１の撮像部、２８ 第２の撮像部、３２，３３ 開口、５１ 赤外線撮像素子、５２ 赤外光源、５３ ビームスプリッタ、５４ａ，５４ｂ 赤外光、５５ 反射光、Ａ 基板供給装置、Ｂ 基板切断装置、Ｃ 配置装置。 DESCRIPTION OF SYMBOLS 1 Electronic component manufacturing apparatus, 2 Control part, 3 Substrate supply part, 4 Semiconductor package substrate, 5 Moving mechanism, 6 Rotating mechanism, 7 Cutting table, 8 Cutting mechanism, 9 Rotary blade, 10 Semiconductor package, 10a Perimeter, 11 Inspection Mechanism, 12 Inspection table, 13 Ball electrode, 14 Suction mechanism, 15 Storage table, 16 Arrangement table, 17 Alignment mechanism, 18 Resin sheet, 19 Arrangement member supply unit, 20 Support base, 21 Dashed line, 22 Arrangement member, 23 Vacuum Pump, 24 Electronic components, 25 Conductive film, 27 First imaging unit, 28 Second imaging unit , 3, 2, 33 Aperture, 51 Infrared imaging device, 52 Infrared light source, 53 Beam splitter, 54a, 54b Infrared Light, 55 reflected light, A substrate supply device, B substrate cutting device, C placement device.

Claims (10)

半導体パッケージを吸着するための吸着機構と、
前記半導体パッケージを配置するための樹脂シートと、
前記樹脂シートを支持するための支持基台と、
前記支持基台の開口を撮像するための第１の撮像部と、を備え、
前記第１の撮像部は、赤外光源と、赤外線撮像素子と、前記赤外光源から前記樹脂シートを通して前記支持基台に入射する入射光と前記入射光が前記支持基台で反射する反射光とを同軸とするための光学部材と、を備え、
前記吸着機構に吸着された前記半導体パッケージの撮像データと、前記赤外線撮像素子により撮像される前記開口の撮像データとに基づいて、前記開口に対する前記半導体パッケージの位置合わせを行って、前記半導体パッケージを前記樹脂シート上に配置する、半導体パッケージ配置装置。 An adsorption mechanism for adsorbing a semiconductor package;
A resin sheet for disposing the semiconductor package;
A support base for supporting the resin sheet;
A first imaging unit for imaging the opening of the support base,
The first imaging unit includes an infrared light source, an infrared imaging element, incident light that enters the support base from the infrared light source through the resin sheet, and reflected light that the incident light reflects on the support base. And an optical member for coaxially,
Based on the imaging data of the semiconductor package adsorbed by the adsorption mechanism and the imaging data of the opening imaged by the infrared imaging device, the semiconductor package is aligned with the opening, and the semiconductor package is A semiconductor package arranging device arranged on the resin sheet. 前記吸着機構に吸着された前記半導体パッケージを撮像するための第２の撮像部をさらに備え、
前記吸着機構は、前記半導体パッケージの吸着位置の上方と前記樹脂シートの上方との間を一軸方向に移動可能であり、
前記吸着機構の移動の間に前記第２の撮像部は前記吸着機構に吸着された前記半導体パッケージを下方から撮像する、請求項１に記載の半導体パッケージ配置装置。 A second imaging unit for imaging the semiconductor package adsorbed by the adsorption mechanism;
The suction mechanism is movable in a uniaxial direction between the upper position of the suction position of the semiconductor package and the upper side of the resin sheet,
2. The semiconductor package placement device according to claim 1, wherein during the movement of the suction mechanism, the second imaging unit images the semiconductor package sucked by the suction mechanism from below. 前記支持基台は前記開口を複数備え、
前記開口の複数が前記一軸方向に整列するように前記樹脂シートおよび前記支持基台を回転させるための回転機構をさらに備えた、請求項２に記載の半導体パッケージ配置装置。 The support base includes a plurality of the openings,
The semiconductor package placement device according to claim 2, further comprising a rotation mechanism for rotating the resin sheet and the support base so that a plurality of the openings are aligned in the uniaxial direction. 前記樹脂シートおよび前記支持基台を前記一軸方向と直交する第２の一軸方向に移動させることが可能な搬送機構をさらに備えた、請求項２または請求項３に記載の半導体パッケージ配置装置。   4. The semiconductor package placement device according to claim 2, further comprising a transport mechanism capable of moving the resin sheet and the support base in a second uniaxial direction orthogonal to the uniaxial direction. 5. 前記半導体パッケージを作製するために半導体パッケージ基板を切断するための半導体パッケージ基板切断装置と、
請求項１〜請求項４のいずれか１項に記載の半導体パッケージ配置装置と、を備えた、製造装置。 A semiconductor package substrate cutting device for cutting a semiconductor package substrate to produce the semiconductor package;
The manufacturing apparatus provided with the semiconductor package arrangement | positioning apparatus of any one of Claims 1-4. 半導体パッケージを吸着機構により吸着する工程と、
前記吸着機構に吸着された前記半導体パッケージの撮像データを取得する工程と、
前記吸着機構に吸着された前記半導体パッケージを配置するための樹脂シートを支持する支持基台の開口の撮像データを取得する工程と、
前記半導体パッケージの撮像データと、前記開口の撮像データとに基づいて、前記開口に対する前記半導体パッケージの位置合わせを行う工程と、
前記半導体パッケージを前記樹脂シート上に配置する工程と、を含み、
前記開口の撮像データを取得する工程は、赤外光源から前記樹脂シートを通して前記支持基台に入射光を入射させ、前記入射光が前記支持基台で反射した反射光を赤外線撮像素子を含む第１の撮像部で撮像する工程を含み、前記入射光と前記反射光とは同軸とされる、半導体パッケージの配置方法。 A process of adsorbing a semiconductor package by an adsorption mechanism;
Obtaining imaging data of the semiconductor package adsorbed by the adsorption mechanism;
Obtaining imaging data of an opening of a support base that supports a resin sheet for placing the semiconductor package adsorbed by the adsorption mechanism; and
Aligning the semiconductor package with respect to the opening based on the imaging data of the semiconductor package and the imaging data of the opening;
Placing the semiconductor package on the resin sheet,
The step of acquiring imaging data of the opening includes an infrared imaging element that reflects incident light incident on the support base from an infrared light source through the resin sheet and reflected by the support base. A method for arranging a semiconductor package, comprising: imaging with one imaging unit, wherein the incident light and the reflected light are coaxial. 前記吸着機構を前記半導体パッケージの吸着位置の上方から前記樹脂シートの上方までを一軸方向に移動させる工程をさらに含み、
前記半導体パッケージの撮像データを取得する工程は、第２の撮像部を用いて前記半導体パッケージの撮像データを取得する工程を含み、
前記開口の撮像データを取得する工程は、前記吸着機構に取り付けられた前記第１の撮像部の前記赤外線撮像素子を用いて前記開口の撮像データを取得する工程を含み、
前記移動させる工程の間に、前記第２の撮像部を用いて前記半導体パッケージの撮像データを取得する工程を行う、請求項６に記載の半導体パッケージの配置方法。 Further including the step of moving the suction mechanism in a uniaxial direction from above the suction position of the semiconductor package to above the resin sheet;
The step of acquiring the imaging data of the semiconductor package includes the step of acquiring the imaging data of the semiconductor package using a second imaging unit,
The step of acquiring the imaging data of the opening includes the step of acquiring the imaging data of the opening using the infrared imaging element of the first imaging unit attached to the suction mechanism,
The semiconductor package arrangement method according to claim 6, wherein a step of acquiring imaging data of the semiconductor package using the second imaging unit is performed during the moving step. 前記支持基台は前記開口を複数備え、
前記開口の複数が前記一軸方向に整列するように前記樹脂シートおよび前記支持基台を回転させる工程をさらに含む、請求項７に記載の半導体パッケージの配置方法。 The support base includes a plurality of the openings,
The semiconductor package placement method according to claim 7, further comprising a step of rotating the resin sheet and the support base so that a plurality of the openings are aligned in the uniaxial direction. 前記樹脂シートおよび前記支持基台を前記一軸方向と直交する第２の一軸方向に移動させる工程をさらに含む、請求項７または請求項８に記載の半導体パッケージの配置方法。   The semiconductor package placement method according to claim 7, further comprising a step of moving the resin sheet and the support base in a second uniaxial direction orthogonal to the uniaxial direction. 半導体パッケージを作製するために半導体パッケージ基板を切断するための半導体パッケージ基板を切断する工程と、
請求項６〜請求項９のいずれか１項に記載の半導体パッケージの配置方法により前記半導体パッケージを前記樹脂シート上に配置する工程と、
前記樹脂シート上に配置された前記半導体パッケージに導電性膜を形成する工程と、を含む、電子部品の製造方法。 And cutting the semiconductor package substrate for cutting the semiconductor package substrate in order to produce a semi-conductor package,
Placing the semiconductor package on the resin sheet by the semiconductor package placement method according to any one of claims 6 to 9;
Forming a conductive film on the semiconductor package disposed on the resin sheet.
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