JP6591517B2 - 表示装置 - Google Patents
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- JP6591517B2 JP6591517B2 JP2017237747A JP2017237747A JP6591517B2 JP 6591517 B2 JP6591517 B2 JP 6591517B2 JP 2017237747 A JP2017237747 A JP 2017237747A JP 2017237747 A JP2017237747 A JP 2017237747A JP 6591517 B2 JP6591517 B2 JP 6591517B2
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- 238000007789 sealing Methods 0.000 claims description 78
- 239000011159 matrix material Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 9
- 229910016027 MoTi Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 116
- 239000010408 film Substances 0.000 description 48
- 238000000034 method Methods 0.000 description 26
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- 239000000463 material Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- 238000002834 transmittance Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/872—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
Description
Claims (22)
- 基板のアクティブ領域上に配置される発光素子と、
前記発光素子上に配置される封止部と、
前記封止部上に配置されるタッチセンサーと、
前記封止部と前記タッチセンサーの間に配置されるカラーフィルターアレイと、
前記タッチセンサーと電気的に接続されて前記基板のパッド領域上に配置されるタッチパッドと、
前記パッド領域と前記アクティブ領域との間に配置されるダムと、
前記タッチパッド及び前記タッチセンサーを電気的に接続し、前記ダムを横切るように配置されるルーティングラインと、
を含み、
前記封止部は、前記ダム上に配置されている、表示装置。 - 前記カラーフィルターアレイは、
前記封止部上に配置されるブラックマトリックスと、
前記封止部及び前記ブラックマトリックス上に配置されるカラーフィルターと
を含む、請求項1に記載の表示装置。 - 前記基板と前記封止部の間に配置される少なくとも一層の絶縁膜をさらに含む、
請求項1に記載の表示装置。 - 前記タッチパッドは、カラーフィルターアレイと接触する、
請求項1に記載の表示装置。 - 前記カラーフィルターアレイは、前記封止部上に配置されるタッチ平坦化層をさらに含む、
請求項2に記載の表示装置。 - 前記ルーティングラインは、前記カラーフィルター及び前記タッチ平坦化層の少なくとも一つを覆うように配置され、前記カラーフィルター及び前記タッチ平坦化層の少なくとも一つと接触する、
請求項5に記載の表示装置。 - 前記ルーティングラインは、前記タッチパッド及び前記タッチセンサーを電気的に接続し、前記カラーフィルター及び前記タッチ平坦化層の少なくとも一つと接触する、
請求項6に記載の表示装置。 - 前記タッチパッドは、
前記基板と前記封止部との間に配置される少なくとも一層の絶縁膜上に配置されるパッド電極と、
前記パッド電極及び前記ルーティングラインと接続されるパッドカバー電極と
を含み、
前記パッドカバー電極は、前記パッド電極及び前記パッドカバー電極の間に配置される前記カラーフィルターアレイを貫通するパッドコンタクトホールを通じて露出する前記パッド電極と接続される、
請求項1に記載の表示装置。 - 前記パッドコンタクトホールは、前記パッド電極及び前記パッドカバー電極の間に配置されるカラーフィルター及びタッチ平坦化層の少なくとも一つを貫通して形成される、
請求項8に記載の表示装置。 - 前記パッドカバー電極は、少なくとも一つのカラーフィルターと接触し、前記パッド電極は、前記少なくとも一層の絶縁膜と接触する、
請求項8に記載の表示装置。 - 前記封止部は、多数の無機封止層と、前記無機封止層間に配置される少なくとも一層の有機封止層とを含む、
請求項8に記載の表示装置。 - 前記パッドコンタクトホールは、前記パッド電極及び前記パッドカバー電極の間に配置される前記多数の無機封止層の少なくとも一つと、カラーフィルター及びタッチ平坦化層の少なくとも一つとを貫通する、
請求項11に記載の表示装置。 - カラーフィルター及びタッチ平坦化層の少なくとも一つは、前記アクティブ領域から前記パッド領域まで伸長される、
請求項11に記載の表示装置。 - カラーフィルター及びタッチ平坦化層のいずれか一つは、前記アクティブ領域から前記ダムと前記タッチパッドの間の領域まで伸長し、
前記カラーフィルター及び前記タッチ平坦化層の残りの一つは、前記アクティブ領域から前記パッド領域まで伸長する、
請求項8に記載の表示装置。 - 前記ルーティングラインは、前記カラーフィルターアレイが該ルーティングラインと前記ダムとの間に配置された状態で前記ダムの上部に配置される、
請求項13に記載の表示装置。 - 前記タッチセンサーは、
前記カラーフィルターアレイ上で第1方向に配列されるタッチ駆動ラインと、
前記カラーフィルターアレイ上で前記第1方向と交差する第2方向に配列されるタッチセンシングラインと、
を含む、請求項1に記載の表示装置。 - 前記タッチ駆動ライン及び前記タッチセンシングラインは、メッシュ状に形成される、
請求項16に記載の表示装置。 - 前記タッチ駆動ラインのそれぞれは、第1タッチ電極と、前記第1タッチ電極を互いに連結する第1ブリッジとを含み、
前記タッチセンシングラインのそれぞれは、第2タッチ電極と、前記第2タッチ電極を互いに連結する第2ブリッジとを含み、
前記タッチセンサーは、前記第1及び第2タッチ電極の間に配置されるタッチ絶縁膜をさらに含み、
前記第1及び第2ブリッジの少なくとも一つは、少なくとも一つのスリットを含む、
請求項16に記載の表示装置。 - 前記第1及び第2タッチ電極と前記第1ブリッジは、Ti、Al、Mo、MoTi、Cu及びTaから選ばれた少なくとも一つの導電層を用いて3層積層構造に形成される、
請求項18に記載の表示装置。 - 前記第2ブリッジは、少なくとも一つのスリットを含み、前記発光素子のアノード電極上に形成されたバンクと重畳する、請求項18に記載の表示装置。
- 前記発光素子と接続されるトランジスタと、
前記トランジスタのアクティブ層の下部に配置される第1絶縁膜と、
前記トランジスタのゲート電極とアクティブ層の間に配置される第2絶縁膜と、
前記ゲート電極と前記トランジスタのソース及びドレイン電極の間に配置される第3絶縁膜と、
前記ソース及びドレイン電極と前記発光素子の間に配置される第4絶縁膜と
をさらに含み、
前記少なくとも一層の絶縁膜は、前記第1〜第4絶縁膜の少なくとも一つである、
請求項3に記載の表示装置。 - 基板上に配置される発光素子と、
前記発光素子上に配置される封止部と、
前記封止部上に配置されるタッチセンサーと、
前記封止部と前記タッチセンサーの間に配置され、前記基板のパッド領域に伸長するカラーフィルターと、
前記タッチセンサーと電気的に接続されるタッチパッドと、
を含む、表示装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020160181125A KR20180076689A (ko) | 2016-12-28 | 2016-12-28 | 표시 장치 |
KR10-2016-0181125 | 2016-12-28 |
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JP2018109962A JP2018109962A (ja) | 2018-07-12 |
JP6591517B2 true JP6591517B2 (ja) | 2019-10-16 |
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JP2017237747A Active JP6591517B2 (ja) | 2016-12-28 | 2017-12-12 | 表示装置 |
Country Status (4)
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US (1) | US10490610B2 (ja) |
JP (1) | JP6591517B2 (ja) |
KR (1) | KR20180076689A (ja) |
CN (1) | CN108258011B (ja) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180076689A (ko) * | 2016-12-28 | 2018-07-06 | 엘지디스플레이 주식회사 | 표시 장치 |
CN108304086B (zh) * | 2017-01-11 | 2020-09-15 | 群创光电股份有限公司 | 触控显示装置 |
KR102438255B1 (ko) * | 2017-05-31 | 2022-08-30 | 엘지디스플레이 주식회사 | 표시 장치 |
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