JP6583081B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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JP6583081B2
JP6583081B2 JP2016057341A JP2016057341A JP6583081B2 JP 6583081 B2 JP6583081 B2 JP 6583081B2 JP 2016057341 A JP2016057341 A JP 2016057341A JP 2016057341 A JP2016057341 A JP 2016057341A JP 6583081 B2 JP6583081 B2 JP 6583081B2
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layer
film
wafer
etching
gas
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JP2017174902A (ja
JP2017174902A5 (enExample
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寛晃 池川
寛晃 池川
小川　淳
淳 小川
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2016057341A priority Critical patent/JP6583081B2/ja
Priority to TW106108647A priority patent/TWI662607B/zh
Priority to KR1020170033034A priority patent/KR102103625B1/ko
Priority to US15/465,144 priority patent/US10297443B2/en
Publication of JP2017174902A publication Critical patent/JP2017174902A/ja
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    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76837—Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics

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